KRF7460 [TYSEMI]
Continuous Drain Current, VGS 10V,Ta = 25 ID 12 A; 连续漏电流， VGS 10V ， TA = 25号12一
| 型号： | KRF7460 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Continuous Drain Current, VGS 10V,Ta = 25 ID 12 A |
| 文件： | 总2页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ICIC
Product specification
KRF7460
Features
Absolute Maximum Ratings Ta = 25
Parameter
Continuous Drain Current, VGS @ 10V,Ta = 25
Continuous Drain Current, VGS @ 10V,TA = 70
Pulsed Drain Current*1
Symbol
ID
Rating
Unit
A
12
10
ID
IDM
100
2.5
Power Dissipation Ta = 25 *1
TA = 70 *1
PD
W
1.6
Linear Derating Factor
0.02
20
W/
V
Gate-to-Source Voltage
VGS
VDS
Drain-Source Voltage
20
V
Operating Junction and Storage Temperature Range
Junction-to-Ambient
TJ,TSTG
-55 to + 150
50
R
JA
/W
/W
mJ
A
Junction-to-Drain Lead
R
JL
20
Single Pulse Avalanche Energy*3
Avalanche Current *2
EAS
IAR
240
9.6
*1 Pulse width
400 s; duty cycle
2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
*3 Starting TJ = 25 , L = 5.2mH,RG = 25 , IAS = 9.6A.
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ICIC
Product specification
KRF7460
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
VGS = 0V, ID = 250
Min
20
Typ
Max
Unit
V
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
V(BR)DSS
A
0.089
7.2
V(BR)DSS/ TJ ID = 1mA,Reference to 25
V/
VGS = 10V, ID = 12A*1
RDS(on)
VGS = 4.5V, ID = 9.6A*1
10
14
Static Drain-to-Source On-Resistance
m
10.5
Gate Threshold Voltage
VGS(th)
gfs
1.0
26
3.0
V
S
VDS = VGS, ID = 250
A
Forward Transconductance
VDS = 16V, ID = 9.6A*1
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125
VGS = 16V
20
Drain-to-Source Leakage Current
IDSS
A
100
200
-200
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
nA
VGS = -16V
Qg
Qgs
Qgd
Qoss
td(on)
tr
ID = 9.6A
19
6.9
6.0
17
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
VDS = 10V
nC
VGS = 4.5V,*1
VGS = 0V, VDS = 10V
VDD = 10V
26
11
ID = 9.6A
6.9
12
ns
Turn-Off Delay Time
Fall Time
td(off)
tf
RG =1.8
VGS=4.5V
4.3
205.
1060
150
Input Capacitance
Ciss
Coss
Crss
VGS = 0V
pF
Output Capacitance
VDS = 10V
Reverse Transfer Capacitance
ƒ= 1.0MHz
IS
2.3
Continuous Source Current Body Diode)
Pulsed Source Current Body Diode) *2
A
V
ISM
100
1.3
0.8
0.66
44
TJ = 25 , IS = 9.6A, VGS = 0V*1
TJ = 125 , IS = 9.6A, VGS = 0V*1
TJ = 25 , IF = 9.6A.VR=10V
di/dt = 100A/ s*1
Diode Forward Voltage
VSD
Reverse Recovery Time
Reverse RecoveryCharge
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
trr
66
90
66
96
ns
60
nC
ns
44
TJ = 125 , IF = 9.6A.VR=10V
di/dt = 100A/ s*1
Qrr
64
nC
*1 Pulse width
400µs; duty cycle
2%.
*2 Repetitive rating; pulse width limited bymax
http://www.twtysemi.com
sales@twtysemi.com
2of 2
4008-318-123
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