MMBF0201NLT1G [TYSEMI]
N-CHANNEL SOT-23; N沟道SOT- 23
| 型号： | MMBF0201NLT1G |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | N-CHANNEL SOT-23 |
| 文件： | 总2页 (文件大小：469K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
MMBF0201NLT1
Preferred Device
Power MOSFET
300 mAmps, 20 Volts
N−Channel SOT−23
These miniature surface mount MOSFETs low R
assure
DS(on)
minimal power loss and conserve energy, making these devices ideal
for use in small power management circuitry. Typical applications are
dc−dc converters, power management in portable and
battery−powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
300 mAMPS − 20 VOLTS
RDS(on) = 1 W
N−Channel
Features
3
• Low R
Provides Higher Efficiency and Extends Battery Life
DS(on)
• Miniature SOT−23 Surface Mount Package Saves Board Space
• Pb−Free Package is Available
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
Symbol
V
Value
20
Unit
Vdc
2
DSS
V
20
Vdc
GS
MARKING DIAGRAM
AND PIN ASSIGNMENT
mAdc
− Continuous @ T = 25°C
I
I
300
240
750
A
D
D
− Continuous @ T = 70°C
A
3
3
− Pulsed Drain Current (t ≤ 10 ms)
I
p
DM
Drain
Total Power Dissipation @ T = 25°C
P
225
− 55 to 150
556
mW
°C
A
D
1
Operating and Storage Temperature Range
Thermal Resistance, Junction−to−Ambient
T , T
J
N1 M G
stg
2
G
R
q
°C/W
°C
JA
SOT−23
CASE 318
STYLE 21
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
260
1
2
L
Gate
Source
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
N1
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBF0201NLT1
SOT−23 3000 Tape & Reel
MMBF0201NLT1G
SOT−23 3000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
http://www.twtysemi.com
sales@twtysemi.com
1of 2
4008-318-123
Product specification
MMBF0201NLT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
20
−
−
Vdc
(BR)DSS
(V = 0 Vdc, I = 10 mA)
GS
D
Zero Gate Voltage Drain Current
(V = 16 Vdc, V = 0 Vdc)
I
I
mAdc
DSS
−
−
−
−
1.0
10
DS
GS
(V = 16 Vdc, V = 0 Vdc, T = 125°C)
DS
GS
J
Gate−Body Leakage Current (V
=
20 Vdc, V = 0)
−
−
100
nAdc
GS
DS
GSS
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
V
1.0
1.7
2.4
Vdc
GS(th)
(V = V , I = 250 mAdc)
DS
GS
D
Static Drain−to−Source On−Resistance
(V = 10 Vdc, I = 300 mAdc)
r
W
DS(on)
−
−
0.75
1.0
1.0
1.4
GS
D
(V = 4.5 Vdc, I = 100 mAdc)
GS
D
Forward Transconductance (V = 10 Vdc, I = 200 mAdc)
g
FS
−
450
−
mMhos
pF
DS
DYNAMIC CHARACTERISTICS
Input Capacitance
D
(V = 5.0 V)
DS
C
iss
−
−
−
45
25
−
−
−
Output Capacitance
Transfer Capacitance
(V = 5.0 V)
C
oss
DS
(V
= 5.0 V)
C
rss
5.0
DG
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
t
−
−
−
−
−
2.5
2.5
−
−
−
−
−
ns
d(on)
Rise Time
t
r
(V = 15 Vdc, I = 300 mAdc,
DD
D
R = 50 W)
L
Turn−Off Delay Time
Fall Time
t
15
d(off)
t
0.8
f
Gate Charge (See Figure 5)
Q
1400
pC
A
T
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
I
−
−
−
−
−
0.3
0.75
−
S
Pulsed Current
I
SM
Forward Voltage (Note 2)
V
0.85
V
SD
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
http://www.twtysemi.com
sales@twtysemi.com
2of 2
4008-318-123
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