MMBF0201NLT3 [ONSEMI]

300mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC, CASE 318-08, 3 PIN;


型号：	MMBF0201NLT3
厂家：	ONSEMI
描述：	300mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC, CASE 318-08, 3 PIN
文件：	总6页 (文件大小：136K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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by MMBF0201NLT1/D

SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

N–CHANNEL

ENHANCEMENT–MODE

TMOS MOSFET

Part of the GreenLine Portfolio of devices with energy–con-

serving traits.

= 1.0 OHM

DS(on)

These miniature surface mount MOSFETs utilize Motorola’s High

Cell Density, HDTMOS process. Low r

assures minimal

DS(on)

power loss and conserves energy, making this device ideal for use

in small power management circuitry. Typical applications are

dc–dc converters, power management in portable and battery–

powered products such as computers, printers, PCMCIA cards,

cellular and cordless telephones.

3 DRAIN

CASE 318–08, Style 21

SOT–23 (TO–236AB)

•

Low r

Provides Higher Efficiency and Extends Battery Life

Miniature SOT–23 Surface Mount Package Saves Board Space

DS(on)

GATE

2 SOURCE

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain–to–Source Voltage

Symbol

Value

Unit

Vdc

DSS

Gate–to–Source Voltage — Continuous

± 20

Drain Current — Continuous @ T = 25°C

300

240

750

mAdc

Drain Current — Continuous @ T = 70°C

Drain Current — Pulsed Drain Current (t ≤ 10 µs)

(1)

Total Power Dissipation @ T = 25°C

225

– 55 to 150

556

°C

Operating and Storage Temperature Range

Thermal Resistance — Junction–to–Ambient

T , T

stg

°C/W

°C

θJA

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

DEVICE MARKING

(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.

ORDERING INFORMATION

Device

Reel Size

Tape Width

Quantity

3000

MMBF0201NLT1

MMBF0201NLT3

7″

12 mm embossed tape

13″

10,000

GreenLine is a trademark of Motorola, Inc.

HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a registered trademark of the Berquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

M_Mot_oo_tor_ro_ol_la_a,S_Inm_c.a₁₉ll₉–₇Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

—

Vdc

(BR)DSS

= 0 Vdc, I = 10 µA)

Zero Gate Voltage Drain Current

µAdc

DSS

= 16 Vdc, V

= 0 Vdc)

= 0 Vdc, T = 125°C)

—

1.0

Gate–Body Leakage Current (V

= ± 20 Vdc, V

= 0)

—

±100

nAdc

GSS

(1)

ON CHARACTERISTICS

Gate Threshold Voltage

1.0

1.7

2.4

Vdc

GS(th)

= V , I = 250 µAdc)

Static Drain–to–Source On–Resistance

Ohms

DS(on)

= 10 Vdc, I = 300 mAdc)

—

0.75

1.0

1.4

= 4.5 Vdc, I = 100 mAdc)

Forward Transconductance (V

= 10 Vdc, I = 200 mAdc)

—

450

—

mMhos

DYNAMIC CHARACTERISTICS

Input Capacitance

= 5.0 V)

—

iss

Output Capacitance

oss

Transfer Capacitance

5.0

rss

(2)

SWITCHING CHARACTERISTICS

Turn–On Delay Time

—

2.5

—

d(on)

Rise Time

= 15 Vdc, I = 300 mAdc,

= 50 Ω)

Turn–Off Delay Time

Fall Time

d(off)

0.8

Gate Charge (See Figure 5)

1400

SOURCE–DRAIN DIODE CHARACTERISTICS

Continuous Current

—

0.3

0.75

—

Pulsed Current

(2)

Forward Voltage

0.85

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

1.0

0.8

0.6

0.4

0.2

1.0

0.8

0.6

0.4

= 5 V

= 4 V

= 10, 9, 8, 7, 6 V

125°C

–55°C

0.2

25°

= 3 V

0.3

V , DRAIN–TO–SOURCE VOLTAGE (VOLTS)

0.6

0.9

1.2

1.4

, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. Transfer Characteristics

Figure 2. On–Region Characteristics

1.5

1.2

0.9

0.6

0.3

2.4

2.0

1.5

1.0

0.5

= 4.5 V

= 10 V

0.2

0.4

0.6

0.8

, DRAIN CURRENT (AMPS)

V , GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 3. On–Resistance versus Drain Current

Figure 4. On–Resistance versus

Gate–to–Source Voltage

1.10

1.05

1.00

0.95

0.90

0.85

0.80

0.75

0.70

0.65

0.60

= 250 µA

= 16 V

= 300 mA

–25

100

125

150

160

450

2000

3400

Q , TOTAL GATE CHARGE (pC)

TEMPERATURE (°C)

Figure 5. Gate Charge

Figure 6. Threshold Voltage Variance

Over Temperature

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

1.8

1.6

1.4

1.2

1.0

0.8

100

= 10 V @ 300 mA

= 4.5 V @ 100 mA

iss

oss

rss

0.6

–50

–25

100

125

150

T , JUNCTION TEMPERATURE (

, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 7. On–Resistance versus

Junction Temperature

Figure 8. Capacitance

1.0

0.1

125°C

25°C

–55°C

0.01

0.001

0.3

0.6

0.9

1.2

1.4

SOURCE–TO–DRAIN FORWARD VOLTAGE (VOLTS)

Figure 9. Source–to–Drain Forward Voltage

versus Continuous Current (I )

Motorola Small–Signal Transistors, FETs and Diodes Device Data

INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total

design. The footprint for the semiconductor packages must

be the correct size to insure proper solder connection

interface between the board and the package. With the

correct pad geometry, the packages will self align when

subjected to a solder reflow process.

0.037

0.95

0.037

0.95

0.079

2.0

0.035

0.9

0.031

0.8

inches

SOT–23

SOT–23 POWER DISSIPATION

The power dissipation of the SOT–23 is a function of the

SOLDERING PRECAUTIONS

drain pad size. This can vary from the minimum pad size for

soldering to a pad size given for maximum power dissipation.

Power dissipation for a surface mount device is determined

The melting temperature of solder is higher than the rated

temperature of the device. When the entire device is heated

to a high temperature, failure to complete soldering within a

short time could result in device failure. Therefore, the

following items should always be observed in order to

minimize the thermal stress to which the devices are

subjected.

by T

, the maximum rated junction temperature of the

, the thermal resistance from the device junction to

J(max)

die, R

θJA

ambient, and the operating temperature, T . Using the

values provided on the data sheet for the SOT–23 package,

can be calculated as follows:

• Always preheat the device.

• The delta temperature between the preheat and soldering

should be 100°C or less.*

– T

J(max)

θJA

• When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum

temperature ratings as shown on the data sheet. When

using infrared heating with the reflow soldering method,

the difference shall be a maximum of 10°C.

The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values into

the equation for an ambient temperature T of 25°C, one can

calculate the power dissipation of the device which in this

• The soldering temperature and time shall not exceed

260°C for more than 10 seconds.

case is 225 milliwatts.

• When shifting from preheating to soldering, the maximum

temperature gradient shall be 5°C or less.

150°C – 25°C

556°C/W

= 225 milliwatts

• After soldering has been completed, the device should be

allowed to cool naturally for at least three minutes.

Gradual cooling should be used as the use of forced

cooling will increase the temperature gradient and result

in latent failure due to mechanical stress.

The 556°C/W for the SOT–23 package assumes the use

of the recommended footprint on a glass epoxy printed circuit

board to achieve a power dissipation of 225 milliwatts. There

are other alternatives to achieving higher power dissipation

from the SOT–23 package. Another alternative would be to

use a ceramic substrate or an aluminum core board such as

Thermal Clad . Using a board material such as Thermal

Clad, an aluminum core board, the power dissipation can be

doubled using the same footprint.

• Mechanical stress or shock should not be applied during

cooling.

* Soldering a device without preheating can cause excessive

thermal shock and stress which can result in damage to the

device.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD THICKNESS

IS THE MINIMUM THICKNESS OF BASE

MATERIAL.

INCHES

MIN MAX

MILLIMETERS

DIM

MIN

2.80

1.20

0.89

0.37

1.78

0.013

0.085

0.45

0.89

2.10

0.45

MAX

3.04

1.40

1.11

0.50

2.04

0.100

0.177

0.60

1.02

2.50

0.60

0.1102 0.1197

0.0472 0.0551

0.0350 0.0440

0.0150 0.0200

0.0701 0.0807

0.0005 0.0040

0.0034 0.0070

0.0180 0.0236

0.0350 0.0401

0.0830 0.0984

0.0177 0.0236

STYLE 21:

PIN 1. GATE

2. SOURCE

3. DRAIN

CASE 318–08

ISSUE AE

SOT–23 (TO–236AB)

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola

datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”

must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of

others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other

applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury

ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola

and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees

arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that

Motorola was negligent regarding the design or manufacture of the part. Motorola and

Opportunity/Affirmative Action Employer.

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal

This device has a class 1 ESD rating.

Mfax is a trademark of Motorola, Inc.

How to reach us:

USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;

P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447

JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,

3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315

Mfax : RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609

INTERNET: http://Design–NET.com

ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

MMBF0201NLT1/D

◊

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBF0201NLT3 [ONSEMI]

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