MMBF1374T1 [ONSEMI]
50mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 3 PIN;
| 型号： | MMBF1374T1 |
| 厂家： | 
ONSEMI |
| 描述： | 50mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 3 PIN 开关 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBF1374T1
Preferred Device
Small Signal MOSFET
50 mAmps, 30 Volts
N–Channel SC–70/SOT–323
These miniature surface mount MOSFETs low R
assure
DS(on)
minimal power loss and conserve energy, making these devices ideal
for use in small power management circuitry. Typical applications are
dc–dc converters, power management in portable and
battery–powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
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50 mAMPS
30 VOLTS
• Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
R
= 50 W
DS(on)
• Miniature SC–70/SOT–323 Surface Mount Package Saves
N–Channel
Board Space
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
20
Unit
Vdc
Drain–to–Source Voltage
Gate–to–Source Voltage – Pulse
V
DS
GS
G
V
± 20
50
Vdc
Drain Current – Continuous @ T = 25°C
I
D
mAdc
A
S
Total Power Dissipation @ T = 25°C
(Note 1.) Derate above 25°C
P
D
A
100
mW
MARKING
DIAGRAM
Operating and Storage Temperature
Range
T , T
J stg
– 55 to
150
°C
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
T
260
°C
L
3
SC–70/SOT–323
CASE 419
F1
W
1. Mounted on G10/FR4 glass epoxy board using minimum recommended
footprint.
STYLE 8
1
2
W
= Work Week
PIN ASSIGNMENT
3 Drain
Gate 1
2 Source
Top View
ORDERING INFORMATION
Device
MMBF1374T1
Package
Shipping
SC–70/
SOT–323
3000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
January, 2001 – Rev. 0
MMBF1374T1/D
MMBF1374T1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
V
30
–
–
–
–
–
Vdc
µAdc
µAdc
(BR)DSS
(V
GS
= 0 Vdc, I = 10 µA)
D
Zero Gate Voltage Drain Current
(V = 16 Vdc, V = 0 Vdc)
I
1.0
1.0
DSS
DS
GS
Gate–Body Leakage Current (V
= ± 20 Vdc, V
DS
= 0)
I
–
GS
GSS
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
V
–
–
–
2
2.8
50
–
Vdc
Ω
GS(th)
(V
DS
= V , I = 250 µAdc)
GS
D
Static Drain–to–Source On–Resistance
(V = 4.5 Vdc, I = 10 mAdc)
r
27
DS(on)
GS
D
Forward Transconductance (V
= 10 Vdc, I = 50 mAdc)
g
FS
450
mMhos
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
(V
= 5.0 V)
= 5.0 V)
= 5.0 V)
C
–
–
–
45
25
–
–
–
pF
ns
DS
DS
DG
iss
Output Capacitance
C
oss
Transfer Capacitance
(V
C
5.0
rss
SWITCHING CHARACTERISTICS (Note 3.)
Turn–On Delay Time
t
–
–
–
–
2.5
2.5
15
–
–
–
–
d(on)
Rise Time
t
r
(V
DD
= 15 Vdc, I = 50 mAdc,
D
R
= 50 Ω)
L
Turn–Off Delay Time
Fall Time
t
d(off)
t
0.8
f
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
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2
MMBF1374T1
PACKAGE DIMENSIONS
SC–70/SOT–323
CASE 419–04
ISSUE L
A
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
B
S
INCHES
DIM MIN MAX
MILLIMETERS
1
2
MIN
1.80
1.15
0.80
0.30
1.20
0.00
0.10
MAX
2.20
1.35
1.00
0.40
1.40
0.10
0.25
A
B
C
D
G
H
J
0.071
0.045
0.032
0.012
0.047
0.000
0.004
0.087
0.053
0.040
0.016
0.055
0.004
0.010
D
G
K
L
0.017 REF
0.026 BSC
0.028 REF
0.425 REF
0.650 BSC
0.700 REF
J
N
C
N
S
0.079
0.095
2.00
2.40
0.05 (0.002)
STYLE 8:
PIN 1. Gate
K
H
2. Source
3. Drain
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3
MMBF1374T1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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MMBF1374T1/D
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