CHA6552-QJG_15 [UMS]
5.8- 8.5GHz Power Amplifier;
| 型号： | CHA6552-QJG_15 |
| 厂家： | 
UNITED MONOLITHIC SEMICONDUCTORS |
| 描述： | 5.8- 8.5GHz Power Amplifier |
| 文件： | 总18页 (文件大小：735K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHA6552-QJG
5.8- 8.5GHz Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA6552-QJG is
a
three stage
monolithic GaAs high power circuit producing
4 Watt output power.
UMS
A6552
It is designed for Point to Point radio and
commercial communication systems.
The circuit is manufactured with a pHEMT
process, 0.5µm gate length.
YYWW
It is supplied in RoHS compliant SMD
package.
Pout & PAE versus frequency
Main Features
40
39
38
37
36
35
34
33
32
31
30
40
38
36
34
32
30
28
26
24
22
20
■ Broadband performances: 5.8- 8.5GHz
■ 36dBm saturated power
■ 35dBm at 1dB compression
■ 22dB gain
■ DC bias: Vd = 7.0Volt @ Id = 1.8A
■ QFN6x6
P-1dB at 1.8 A
Psat at 1.8 A
PAE at 1.8A
■ MSL3
5
6
7
8
9
10
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Freq
Parameter
Min
Typ
Max
Unit
GHz
dB
Frequency range
Linear Gain
5.8
8.5
Gain
22
36
45
Psat
Saturated output power
Output IP3
dBm
dBm
OIP3
Ref. : DSCHA6552-QJG4147 - 27 May 14
1/18
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6552-QJG
5.8- 8.5GHz Power Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = +7.0V
Symbol
Fop
Parameter
Min
Typ
Max
Unit
GHz
dB
Operating frequency range
Small Signal Gain
5.8
8.5
G
22
+/-0.035
35
ΔG
Gain variation in temperature
Output power @1dB compression
Saturated output power
Output IP3
dB/°C
dBm
dBm
dBm
%
P1dB
Psat
OIP3
PAE
Rlin
36
45
PAE at 1dB compression
Input Return Loss
22
12
dB
Rlout
Dr (1)
Output Return Loss
15
dB
Detection dynamic range
30
dB
Vdetect1 Voltage detection Vref1-Vdet1 up to Psat
Vdetect2 Voltage detection Vref2-Vdet2 up to Psat
5 to 1200
5 to 1200
-0.4
mV
mV
V
Vg
Idet
Idq
DC Gate voltage
Detector current
3
mA
mA
Total quiescent drain current
1800
These values are representative of onboard measurements as defined on the drawing in
paragraph "Evaluation mother board".
(1) Dr: Output power detection up to Psat.
Ref. : DSCHA6552-QJG4147 - 27 May 14
2/18
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5.8- 8.5GHz Power Amplifier
CHA6552-QJG
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Vd
Parameter
Values
7.5
Unit
V
Drain bias voltage
Idq
Quiescent drain bias current
Gate bias voltage
2.5
A
Vg
-2 to 0
20
V
Pin
Maximum peak input power overdrive (2)
Junction temperature
dBm
°C
°C
°C
Tj
175
Ta
Operating temperature range
Storage temperature range
-40 to +85
-55 to +150
Tstg
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
Typical Bias Conditions
Tamb.= +25°C
Symbol
VD1
Pad No
13, 38
16, 35
19, 32
14, 37
17, 34
23, 29
Parameter
DC Drain voltage 1st stage
DC Drain voltage 2nd stage
DC Drain voltage 3rd stage
DC Gate voltage 1st & 2nd stage
DC Gate voltage 3rd stage
DC Detector biasing voltage
Values
Unit
V
7
7
VD2
V
VD3
7
V
VG1
-0.4
-0.4
7
V
VG2
V
VDC1,2
V
Ref. : DSCHA6552-QJG4147 - 27 May 14
3/18
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6552-QJG
5.8- 8.5GHz Power Amplifier
Device thermal performances
All the figures given in this section are obtained assuming that the QFN device is cooled
down only by conduction through the package thermal pad (no convection mode considered).
The temperature is monitored at the package back-side interface (Tcase) as shown below.
The system maximum temperature must be adjusted in order to guarantee that Tcase
remains below the maximum value specified in the next table. So, the system PCB must be
designed to comply with this requirement.
A derating must be applied on the dissipated power if the Tcase temperature can not be
maintained below the maximum temperature specified (see the curve Pdiss. Max) in order to
guarantee the nominal device life time (MTTF).
DEVICE THERMAL SPECIFICATION : CHA6552-QJG
Recommended max. junction temperature (Tj max)
Junction temperature absolute maximum rating
Max. continuous dissipated power (Pdiss. Max.)
:
:
:
169 °C
175 °C
12.6 W
=> Pdiss. Max. derating above Tcase(1)= 85
Junction-Case thermal resistance (Rth J-C)(2)
Minimum Tcase operating temperature(3)
°C
:
:
:
149 mW/°C
<6 °C/W
-40 °C
Maximum Tcase operating temperature(3)
Minimum storage temperature
:
:
:
85 °C
-55 °C
150 °C
Maximum storage temperature
(1) Derating at junction temperature constant = Tj max.
(2) Rth J-C is calculated for a worst case considering the hottest junction of the MMIC and all the devices biased.
(3) Tcase=Package back side temperature measured under the die-attach-pad (see the drawing below).
14
12
10
8
Tcase
6
4
Example: QFN 16L 3x3
Location of temperature
reference point(Tcase)
on package's bottom side
2
Pdiss. Max. @Tj <Tj max (W)
0
175
-50
-25
0
25
50
75
100
125
150
Tcase (°C)
6.4
Ref. : DSCHA6552-QJG4147 - 27 May 14
4/18
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5.8- 8.5GHz Power Amplifier
CHA6552-QJG
Typical Package Sij parameters
Tamb.= +25°C, Vd = 7.0V, Id = 1.8A
Freq
(GHz)
S11
(dB)
PhS11
(°)
S12
(dB)
PhS12
(°)
S21
(dB)
PhS21
(°)
S22
(dB)
PhS22
(°)
2.0
-1.041
-3.099
-8.054
-10.994
-14.070
-16.029
-17.658
-30.015
-8.525
-5.984
-5.661
-5.516
-5.475
-5.537
-5.739
-6.197
-7.004
-8.237
-9.780
-9.384
-6.348
-3.693
-2.177
-1.468
-1.118
-0.966
-0.776
-0.739
-0.732
-0.705
-0.642
-0.647
-0.965
-1.638
-2.832
-4.695
-4.952
-2.970
-1.664
84.3 -73.211
27.0 -79.988
-28.2 -78.404
-86.6 -69.536
-172.0 -64.590
122.1 -65.219
84.4 -69.670
114.7 -75.711
111.4 -63.313
49.3 -63.445
10.0 -68.226
-22.4 -74.097
-52.5 -53.703
-81.2 -48.721
-109.6 -44.152
-139.6 -40.969
-171.5 -41.763
148.2 -45.063
94.5 -44.475
23.6 -42.375
-39.4 -40.298
-87.0 -38.076
-125.1 -36.219
-157.3 -33.529
177.2 -31.545
154.3 -30.768
132.5 -31.409
112.0 -32.672
91.6 -34.645
72.7 -40.059
52.1 -45.666
30.0 -50.268
5.5 -42.309
92.9 -83.863
27.0 -38.552
-99.5
-141.8
2.3
-0.213
-0.529
-2.347
-9.511
-78.1
-124.7
173.7
114.4
110.8
75.4
3.0
4.0
53.8
72.4
34.8
2.5
8.536
22.224
23.692
23.443
23.387
23.174
17.932
5.990
5.0
87.1
6.0
-114.2 -16.277
79.7 -15.341
-74.4 -24.341
117.7 -12.388
7.0
8.0
16.9
119.7
70.8
-0.8
-30.5
148.4
90.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
27.0
28.0
29.0
30.0
31.0
32.0
33.0
34.0
35.0
36.0
37.0
38.0
39.0
40.0
-70.0
124.8
-14.4
-135.2
118.5
53.2
-7.272
-4.047
-1.990
-1.311
-1.095
-1.118
-1.238
-1.382
-1.563
-1.791
-1.999
-2.147
-2.347
-2.815
-4.565
46.0
-146.6
-7.531
2.1
-143.6 -21.911
136.3 -35.575
78.7 -45.391
36.3 -44.997
1.2 -40.798
-37.8
-72.4
-105.6
-137.8
-170.3
154.1
117.2
78.0
30.4
1.3
-40.6 -41.908
-62.1 -44.861
-70.1 -43.960
-96.8 -41.484
-104.6 -39.432
-119.5 -38.272
-164.4 -36.886
157.9 -33.718
101.8 -31.550
45.4 -30.970
-39.8 -31.359
-120.4 -32.606
174.8 -34.587
98.4 -40.531
29.0 -46.044
-96.0 -53.982
-123.6 -42.891
161.1 -37.655
109.4 -38.476
97.5 -42.419
103.7 -41.328
75.0 -41.029
76.5 -40.312
-40.3
-61.7
-70.1
-100.3
-106.6
-120.6
-158.7
38.5
-0.5
-40.5
-81.6
-105.5
-83.8
-85.6
-102.7
-140.4
-178.8
130.9
-100.2
-139.0
-158.1
176.9
148.9
126.2
106.9
89.2
157.1 -11.243
100.4 -11.609
47.2
-39.6
-119.4
175.0
98.3
-9.455
-5.043
-3.694
-4.390
-9.640
27.5 -18.978
-100.8
-8.681
-5.483
-2.266
-1.273
-0.872
-0.678
-0.405
-0.383
-127.4
159.9
107.1
98.7
-24.5 -37.294
-62.7 -39.019
-118.1 -43.328
161.7 -41.831
95.5 -41.115
52.2 -40.701
102.6
71.5
76.1
71.2
Ref. : DSCHA6552-QJG4147 - 27 May 14
5/18
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6552-QJG
5.8- 8.5GHz Power Amplifier
Typical Sij Measurements
Tamb.= +25°C, Vd = +7.0V, Id = 1.8A
Measurement in the plan of the QFN, using a board compatible with RF probes
Sij versus Frequency
Idq=1.8A
25
24
23
22
0
-5
S21
S11
S22
21
20
19
18
17
16
15
-10
-15
-20
-25
5
6
7
8
9
10
Frequency(GHz)
Ref. : DSCHA6552-QJG4147 - 27 May 14
6/18
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5.8- 8.5GHz Power Amplifier
CHA6552-QJG
Typical Board Measurements
Tamb.= +25°C, Vd = +7.0V, Id = 1.8A
Measurement in the plan of the QFN, using the proposed land pattern & board, as defined in
paragraph “Evaluation mother board”
Linear Gain & Return Losses versus Frequency & Temperature
Idq =1.8A
28
26
24
22
20
18
16
14
12
10
8
35
30
25
20
15
10
5
Gain,85°C
RLin 85°C
RLout-40°C
Gain,25°C
RLin 25°C
RLout25°C
Gain,-40°C
RLin -40°C
RLout85°C
0
-5
-10
-15
-20
-25
-30
-35
6
4
2
0
5
6
7
8
9
10
Frequency(GHz)
Linear Gain & Return Losses versus Frequency & Temperature
Idq = 2.0A
28
26
24
22
20
18
16
14
12
10
8
35
30
25
20
15
10
5
Gain,85°C
RLin 85°C
RLout-40°C
Gain,25°C
RLin 25°C
RLout25°C
Gain,-40°C
RLin -40°C
RLout85°C
0
-5
-10
-15
-20
-25
-30
-35
6
4
2
0
5
6
7
8
9
10
Frequency(GHz)
Ref. : DSCHA6552-QJG4147 - 27 May 14
7/18
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6552-QJG
5.8- 8.5GHz Power Amplifier
Typical Board Measurements
Tamb.= +25°C, Vd = +7.0V, Id = 1.8A
Output Power & PAE versus Frequency & Idq
40
39
38
37
36
35
34
33
32
31
30
40
38
36
34
32
30
P-1dB at 1.8 A
Psatat 1.8 A
PAE at 1.8A
P-1dB at 2 A
28
26
24
22
20
Psatat 2 A
PAE at 2 A
5
6
7
8
9
10
Frequency(GHz)
Current versus Input Power & Temperature
Idq = 1.8A & 2.0A
3
2.9
2.8
2.7
2.6
2.5
2.4
2.3
2.2
2.1
2
85°C
25°C
-40°C
-40°C
25°C
85°C
1.9
1.8
1.7
1.6
-5
-3
-1
1
3
5
7
9
11
13
15
17
Inputpower (dBm)
Ref. : DSCHA6552-QJG4147 - 27 May 14
8/18
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5.8- 8.5GHz Power Amplifier
CHA6552-QJG
Typical Board Measurements
Tamb.= +25°C, Vd = +7.0V, Id = 1.8A
Power versus Frequency & Temperature
Power versus Frequency & Temperature
Idq = 1.8A
Idq = 2.0A
40
39
38
37
36
35
34
33
40
39
38
37
36
35
34
33
P-1dB, 85°C
Psat -40°C
P-1dB, 25°C
Psat 25°C
P-1dB, -40°C
Psat 85°C
P-1dB, 85°C
Psat -40°C
P-1dB, 25°C
Psat 25°C
P-1dB, -40°C
Psat 85°C
32
31
30
32
31
30
5
6
7
8
9
10
5
6
7
8
9
10
Frequency (GHz)
Frequency (GHz)
Output IP3 versus Pout & Frequency
Output IP3 versus Pout & Frequency
Idq = 1.8A
Idq = 2.0A
48
47
46
45
44
43
42
48
47
46
45
44
43
42
5.5GHz
8.5GHz
6.5GHz
9.5GHz
7.5GHz
5.5GHz
8.5GHz
6.5GHz
9.5GHz
7.5GHz
41
40
39
38
41
40
39
38
15 17 19 21 23 25 27 29 31 33 35
Output power DCL (dBm)
15 17 19 21 23 25 27 29 31 33 35
Output power DCL (dBm)
IMD3 versus Pout & Frequency
IMD3 versus Pout & Frequency
Idq = 1.8A
Idq = 2.0A
70
65
60
55
50
45
40
35
30
25
20
70
65
60
55
50
45
40
35
30
25
20
5.5GHz
8.5GHz
6.5GHz
9.5GHz
7.5GHz
5.5GHz
8.5GHz
6.5GHz
9.5GHz
7.5GHz
15 17 19 21 23 25 27 29 31 33 35
Output power DCL (dBm)
15 17 19 21 23 25 27 29 31 33 35
Output power DCL (dBm)
Ref. : DSCHA6552-QJG4147 - 27 May 14
9/18
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6552-QJG
5.8- 8.5GHz Power Amplifier
Typical Board Measurements
Tamb.= +25°C, Vd = +7.0V, Id = 1.8A
Output IP3 versus Frequency, Temperature & Vd
Pin DCL = 0dBm, Idq = 1.8A
50
49
48
47
46
45
44
43
42
41
40
7V; 85°C
6V;85°C
7V;25°C
6C;25°C
7V;-40°C
6V;-40°C
5
6
7
8
9
10
Frequency(GHz)
IMD3 versus Pout & Temperature
IMD3 versus Pout & Temperature
Vd = 7V, Freq. = 7.5GHz
Vd = 6V, Freq. = 7.5GHz
70
65
60
55
50
45
40
35
30
25
20
70
65
60
55
50
45
40
35
30
25
20
85°C
-40°C
25°C
85°C
-40°C
25°C
10 12 14 16 18 20 22 24 26 28 30 32 34 36
Pout DCL (dBm)
10 12 14 16 18 20 22 24 26 28 30 32 34 36
Pout DCL (dBm)
Ref. : DSCHA6552-QJG4147 - 27 May 14
10/18
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5.8- 8.5GHz Power Amplifier
CHA6552-QJG
Typical Board Measurements
Tamb.= +25°C, Vd = +7.0V, Id = 1.8A
OIP3 versus Frequency & Vd
OIP3 versus Frequency & Current
Idq = 2A, Pin DCL = 0dBm
Vd = 7V, Pin DCL = 0dBm
50
49
48
47
46
45
44
43
42
50
49
48
47
46
45
44
43
42
41
40
7V & 2.0A
7V & 1.8A
7V & 1.6A
7V & 1.4A
7V
6
6V
5V
41
40
5
5.5
6.5
7
7.5
8
8.5
9
9.5 10
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5 10
Frequency (GHz)
Frequency (GHz)
Pout at 1dB comp. vs Frequency & Vd
Pout at 3dB comp. vs Frequency & Vd
Idq = 2A
Idq = 2A
40
39
38
37
36
35
34
33
32
40
39
38
37
36
35
34
33
32
7V
6V
5V
31
30
7V
7
6V
5V
8
31
30
5.5
6
6.5
7
7.5
8
8.5
9
9.5
5.5
6
6.5
7.5
8.5
9
9.5
Frequency (GHz)
Frequency (GHz)
VREF1- VDET1 versus Pout
VREF2- VDET2 versus Pout
Vd = 7V
Vd = 7V
1.4
1.4
1.2
1
1.2
1
6GHz
6.5GHz
8GHz
7GHz
6GHz
6.5GHz
8GHz
7GHz
7.5GHz
8.5GHz
7.5GHz
8.5GHz
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
14 16 18 20 22 24 26 28 30 32 34 36 38
Output power (dBm)
14 16 18 20 22 24 26 28 30 32 34 36 38
Output power (dBm)
Ref. : DSCHA6552-QJG4147 - 27 May 14
11/18
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6552-QJG
5.8- 8.5GHz Power Amplifier
Typical Board Measurements
Tamb.= +25°C, Vd = +7.0V, Id = 1.8A
VREF1- VDET1 versus Pout
Vd = 7V & -2 < Pout < +20dBm
0.07
VREF1- VDET1 versus Pout
Vd = 7V & +18 < Pout < +24dBm
0.16
0.15
0.14
0.13
0.12
0.11
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
6GHz
7GHz
8GHz
6.5GHz
7.5GHz
8.5GHz
0.06
0.05
0.04
0.03
0.02
0.01
0
6GHz
7GHz
8GHz
6.5GHz
7.5GHz
8.5GHz
16
18
20
22
24
-2
0
2
4
6
8
10 12 14 16 18 20
Output power (dBm)
Output power (dBm)
(VREF1-VDET1) versus Output Power & Temperature
Vd = 7V, Freq. = 7.5GHz & +16 < Pout < +36dBm
1.4
1.3
1.2
1.1
1
85°C
25°C
-40°C
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
14
16
18
20
22
24
26
28
30
32
34
36
38
Outputpower (dBm)
Please see paragraph “Notes” for more detail on detector
Ref. : DSCHA6552-QJG4147 - 27 May 14
12/18
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5.8- 8.5GHz Power Amplifier
CHA6552-QJG
Package outline (1)
Matt tin, Lead Free
Units :
(Green)
mm
1- Nc
15- Nc
29- VDC2
30- VREF2
31- Nc
2- Nc
16- VD2
17- VG2
18- Nc
From the standard : JEDEC MO-220
3- Gnd(2)
4- Gnd(2)
5- RF IN
6- Gnd(2)
7- Gnd(2)
8- Nc
(VGGD)
32- VD3
33- Nc
41- GND
19- VD3
Nc
20-
34- VG2
35- VD2
36- Nc
Nc
21-
22- VREF1
23- VDC1
24- VDET1
25- Gnd(2)
26- RF OUT
27- Gnd(2)
28- VDET2
Nc
Nc
Nc
9-
10-
11-
37- VG1
38- VD1
39- Gnd(2)
40- Nc
12- Gnd(2)
13- VD1
14- VG1
(1) The package outline drawing included to this data-sheet is given for indication. Refer to the
application note AN0017 (http://www.ums-gaas.com) for exact package dimensions.
(2) It is strongly recommended to ground all pins marked “Gnd” through the PCB board.
Ensure that the PCB board is designed to provide the best possible ground to the package.
Ref. : DSCHA6552-QJG4147 - 27 May 14
13/18
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6552-QJG
5.8- 8.5GHz Power Amplifier
Evaluation mother board
■ Compatible with the proposed footprint.
■ Based on typically Ro4350 / 10mils or equivalent.
■ Using a micro-strip to coplanar transition to access the package.
■ Recommended for the implementation of this product on a module board.
■ Decoupling capacitors of 100pF ±5%, 10nF ±10% and 1µF ±10% are recommended
for all DC accesses.
■ A 10KΩ resistor is recommended on VREF & VDET accesses for the detector
■ See application note AN0017 for details.
Ref. : DSCHA6552-QJG4147 - 27 May 14
14/18
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5.8- 8.5GHz Power Amplifier
CHA6552-QJG
Notes
Due to ESD protection circuits on RF input, an external capacitance might be requested to
isolate the product from the external voltage that could be present on the RF access.
38
37
32
35
30
34
VD1 VG1
VD2
VG2 VD3 VREF2
VDC2
29
28
26
24
23
VDET2
RF IN
RF OUT
5
VDET1
VDC1
VD1
VG1
VD2
VG2 VD3 VREF1
14
13
19 22
16
17
The DC connections do not include any decoupling capacitor in package, therefore it is
mandatory to provide a good external DC decoupling (100pF, 10nF, 1µF) on the PC board,
as close as possible to the package.
A 10KΩ resistor is recommended in parallel to VDET, and VREF accesses.
Please note that it is not mandatory to use both detectors, on north and south sides.
If only one detector is used, the unused pads VDET, VREF and VDC could be unconnected
or grounded.
Package Information
Parameter
Value
RoHS-compliant
Package body material
Low stress Injection Molded Plastic
100% matte Sn
Lead finish
MSL Rating
MSL3
Ref. : DSCHA6552-QJG4147 - 27 May 14
15/18
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6552-QJG
5.8- 8.5GHz Power Amplifier
DC Schematic
7V, 1800mA
D3
G12
G3
D2
D1
515mA
15
260mA
125mA
1.1
0.6
100
RF out
RF in
0.6
100
1.1
15
D1
D2
D3
G12
G3
Ref. : DSCHA6552-QJG4147 - 27 May 14
16/18
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5.8- 8.5GHz Power Amplifier
CHA6552-QJG
Notes
Ref. : DSCHA6552-QJG4147 - 27 May 14
17/18
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6552-QJG
5.8- 8.5GHz Power Amplifier
Recommended package footprint
Refer to the application note AN0017 available at http://www.ums-gaas.com for package foot
print recommendations.
SMD mounting procedure
For the mounting process standard techniques involving solder paste and a suitable reflow
process can be used. For further details, see application note AN0017.
Recommended environmental management
UMS products are compliant with the regulation in particular with the directives RoHS
N°2011/65 and REACh N°1907/2006. More environmental data are available in the
application note AN0019 also available at http://www.ums-gaas.com.
Recommended ESD management
Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD
sensitivity and handling recommendations for the UMS package products.
Ordering Information
QFN 6x6 package:
CHA6552-QJG/XY
Stick: XY = 20
Tape & reel: XY = 21
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHA6552-QJG4147 - 27 May 14
18/18
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
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