CHA6558-99F00 [UMS]
28-32GHz HPA 2W; 28-32GHz HPA 2W
| 型号： | CHA6558-99F00 |
| 厂家： | 
UNITED MONOLITHIC SEMICONDUCTORS |
| 描述： | 28-32GHz HPA 2W |
| 文件： | 总10页 (文件大小：573K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHA6558-99F
RoHS COMPLIANT
28-32GHz HPA 2W
GaAs Monolithic Microwave IC
Description
The CHA6558-99F is a monolithic four
stages GaAs high power amplifier, designed
for Ka-Band applications.
The circuit is dedicated to telecommunication
and VSAT, SATCOM and is also well suited
for a wide range of microwave applications
and systems.
RF IN
RF OUT
It is developed on a robust 0.15µm gate
length pHEMT process, via holes through the
substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
39
37
35
33
31
29
27
25
23
21
19
17
15
28
■ Broadband performances: 28-32GHz
■ 21dB Linear Gain
■ 33dBm output power @3dB compression.
■ 23% PAE@ 3dB compression
■ DC bias: Vd=6Volt@Id=1.4A
■ Chip size 3.46x2.71x0.07mm
Pout@Saturation
PAE @Saturation
Linear Gain
29
30
31
32
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Freq
Parameter
Min
Typ
Max
Unit
GHz
dB
Frequency range
Linear Gain
28
32
Gain
21
33
23
Pout
Output Power @3dB compression
Power added efficiency
dBm
%
PAE
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. DSCHA6558-QAG2251 - 07 Sep 12
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA6558-99F
28-32GHz HPA 2W
Electrical Characteristics
Tamb = +25°C, Vd = +6V Vg adjusted for quiescent current =1.4A
Symbol
Freq
G
Parameter
Operating frequency range
Small signal gain
Min
Typ
Max
Unit
GHz
dB
dBm
dBm
%
28
32
21
33.2
33.4
23
P1dB
Psat
PAE
Rlin
Output power @ 1dB compression
Saturated output power
Power added efficiency at saturation
Input return loss
-8
dB
dB
A
Rlout
Id
Output return loss
-6
Supply quiescent drain current
Drain current @ saturation
Negative gate voltage (G1,G2,G3,G4 pads)
1.4
1.8
≈-0.5
Id_sat
Vg
A
V
These values are representative of on test fixture measurements a bonding wire of typically
0.3nH at the RF ports.
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Cmp
Vd
Parameter
Gain compression level
Values
5
Unit
dB
V
Drain bias voltage ( D1,D2 ,D3 ,D4)
Supply quiescent current
7
Id
1.6
A
Vg
Gate bias voltage
-2 to -0.2
+18
V
Pin
Maximum peak input power overdrive (2)
Junction temperature (3)
dBm
°C
°C
°C
Tj
175
Ta
Operating temperature range
Storage temperature range
-40 to +85
-55 to +150
Tstg
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Duration < 1s.
(3) Thermal Resistance channel to ground paddle = 6.2°C/W for T= +85°C.
Typical Bias Conditions
Tamb.= +25°C
Symbol
Vd
Pad No
Parameter
DC drain Voltage
Values
6
Unit
V
D1,D2,D3,D4
Id
DC Drain current controlled with vg
DC gate Voltage
1.4
≈-0.5(1)
A
Vg
G1,G2,G3,G4
V
(1) To be adjusted until to obtain Id:1.4A
Ref. : DSCHA6558-QAG2251 - 07 Sep 12
2/10
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
28-32GHz HPA 2W
CHA6558-99F
Typical S parameters in test fixture Measurements
Tamb.= +25°C, Vd = +6V, Id = 1.4A
Linear Gain & RLosses versus Frequency
30
25
20
15
10
5
dBS21
dBS11
dBS22
0
-5
-10
-15
-20
26
27
28
29
30
31
32
33
34
35
36
Frequency (GHz)
Output Power @ saturation versus Frequency
39
37
35
33
31
29
27
25
Pout@ saturation
28
29
30
31
32
33
Frequency (GHz)
Ref. DSCHA6558-QAG2251 - 07 Sep 12
3/10
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA6558-99F
28-32GHz HPA 2W
Typical S parameters in test fixture Measurements
Tamb.= +25°C, Vd = +6V, Id = 1.4A
Drain current @ saturation versus Frequency
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
Drain current @ Saturation
1.1
1
28
29
30
31
32
33
Frequency (GHz)
PAE @ saturation versus Frequency
Power added efficiency @ 1dB compression & saturation versus frequency
35
33
31
29
27
25
23
21
19
17
15
13
11
9
PAE @ saturation
7
5
28
29
30
31
32
33
Frequency (GHz)
Ref. : DSCHA6558-QAG2251 - 07 Sep 12
4/10
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
28-32GHz HPA 2W
CHA6558-99F
Typical Measurement in test fixture versus Temperature
Linear gain versus Frequency & Temperature
40
35
30
25
20
15
10
5
0
T=+20°C
-5
T=-40°C
-10
T=+85°C
-15
-20
26
27
28
29
30
31
32
33
34
35
36
Frequency(GHz)
Input Return Loss versus
Frequency & Temperature
Output return loss versus
Frequency & Temperature
0
-5
0
-5
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
T=+20°C
T=+85°C
T=-40°C
T=+20°C
T=+85°C
T=-40°C
26
27
28
29
30
31
32
33
34
35
36
26
27
28
29
30
31
32
33
34
35
36
Frequency(GHz)
Frequency(GHz)
Ref. DSCHA6558-QAG2251 - 07 Sep 12
5/10
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA6558-99F
28-32GHz HPA 2W
Typical Measurement in test fixture versus Temperature
Output Power versus Frequency & Temperature
Output Power @ saturation versus Frequency & Temperature
40
39
38
37
36
35
34
33
32
31
30
29
+25°C
-40°C
+85°C
28
27
26
25
28
29
30
31
32
33
Frequency (GHz)
Quiescent current
versus temperature
Drain current @ saturation
versus temperature
2.5
2.4
2.3
2.2
2.1
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
+25 °C
-40 °C
+85 °C
+25°C
29
-40°C
30
+85°C
31
28
29
30
31
32
33
28
32
33
Frequency(GHz)
Frequency(GHz)
PAE @saturation
versus Temperature
Power added efficiency @ saturation versus frequency & temperature
34
32
30
28
26
24
22
20
18
16
14
12
10
8
+25°C
-40°C
+85°C
6
4
2
0
28
29
30
31
32
33
Frequency(GHz)
Ref. : DSCHA6558-QAG2251 - 07 Sep 12
6/10
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
28-32GHz HPA 2W
CHA6558-99F
Mechanical data
2 3 4 5 6 7 8
9
10 11
1
12
22 21 20 19 18 17 16
15
14 13
Units: µm
Chip width and length are given with a tolerance of ±35µm
Chip thickness = 70µm +/- 10 µm
RF pads (1, 12) = 120 x 150µm²
DC pads (2, 3, 4, 5, 6, 7, 8, 9, 10, 14, 15, 17, 18, 19, 20, 21, 22) = 100 x 100µm²
DC pads (11, 13) = 200 x 100µm²
Pin number
Pin name
IN
Description
Input RF
1
3, 6, 10, 14,18, 21
M
Not connected
Gate Stage1
Drain stage1
Gate Stage2
Drain stage2
Gate Stage3
Drain stage3
Gate Stage4
Drain stage4
Output RF
22
2
G1
D1
4, 20
5, 19
7, 17
8, 16
9, 15
11, 13
12
G2
D2
G3
D3
G4
D4
OUT
Ref. DSCHA6558-QAG2251 - 07 Sep 12
7/10
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA6558-99F
28-32GHz HPA 2W
Recommended Chip assembly & Bonding Diagram
-For best thermal and electrical performances, the chip should be brazed on a metal base
plate.
The RF and DC connections should be done according to the following table:
- DC drain voltage (Pads: D*): Connection of all the pads is mandatory excepted Pad D2
which can be used on one side only. (Pin number 5 or 19)
-DC gate voltage: (Pads G*): Connection of all the pads is mandatory excepted Pads G2 &
G3 (Pin number 4 or 20 for G2 & Pin number 7 or 17 for G3) which can be used on one side
only.
Note: Connection of the pin 19 (other possibility to connect D2) is not mandatory if
connection of pin 5 has been used, nevertheless it is necessary to add the 120pF and 10nF
external capacitor.
Recommended circuit bonding table
Port
Connection
External capacitor
Inductance (Lbonding) = 0.3nH
2 gold wires with diameter of 25µm (550µm max)
Inductance (Lbonding) = 0.3nH
2 gold wires with diameter of 25µm (550µm max)
Inductance 1nH
IN
OUT
G*
D* (1)
(1)
C1 ~ 120pF, C2 ~ 10nF
C1 ~ 120pF, C2 ~ 10nF
Inductance 1nH
2 gold wires with diameter of 25µm are necessary to connect D4
Ref. : DSCHA6558-QAG2251 - 07 Sep 12
8/10
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
28-32GHz HPA 2W
CHA6558-99F
DC SCHEMATIC
HPA : 6V, 1.4A
ESD protections exist on RF accesses. Note that supply feed should be bypassed.
ESD protections are also implemented on each gate access.
It is mandatory to provide a good external DC decoupling on the PC board, as close as
possible to the chip.
Ref. DSCHA6558-QAG2251 - 07 Sep 12
9/10
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA6558-99F
28-32GHz HPA 2W
Recommended ESD management
Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD
sensitivity and handling recommendations for the UMS products.
Recommended environmental management
UMS products are compliant with the regulation in particular with the directives RoHS
N°2011/65 and REACh N°1907/2006. More environmental data are available in the
application note AN0019 also available at http://www.ums-gaas.com.
Ordering Information
Chip form:
CHA6558-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHA6558-QAG2251 - 07 Sep 12
10/10
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
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