20N15VL-TF1-T [UTC]
20A, 150V N-CHANNEL POWER MOSFET;型号: | 20N15VL-TF1-T |
厂家: | Unisonic Technologies |
描述: | 20A, 150V N-CHANNEL POWER MOSFET |
文件: | 总4页 (文件大小:144K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
20N15V
Preliminary
Power MOSFET
20A, 150V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 20N15V is an N-Channel POWER MOSFET, it uses
UTC’s advanced technology to provide customers with high
switching speed and low gate charge.
The UTC 20N15V is suitable for bridge circuits, power
converters and PWM motor controls.
FEATURES
* RDS(on)<0.13Ω @VGS=10V, ID=10A
* High switching speed
* Low gate charge
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Tube
Lead Free
Halogen Free
20N15VLG-TF1-T
D: Drain S: Source
1
G
2
D
3
S
20N15VL-TF1-T
TO-220F1
Note: Pin Assignment: G: Gate
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20N15V
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
150
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
V
A
A
Continuous
±20
Continuous
20
Drain Current
Single Pulsed (tp≤10µs)
Starting TJ=25°C
(VDD=120V, VGS=10V,
IL=20A, L=0.3mH)
IDM
60
Single Drain–to–Source
Avalanche Energy
60
mJ
EAS
Power Dissipation
50
0.4
W
W/°C
°C
PD
Derate above 25°C
Operating Temperature
TJ
+150
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
θJA
RATINGS
62.5
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
2.5
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20N15V
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
IDSS
ID=0.25mA, VGS=0V
150
V
VDS=150V, VGS=0V
10
µA
Drain-Source Leakage Current
VDS=150V, VGS=0V, TJ=125°C
100
µA
Forward
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
100
100
nA
nA
Gate-Source Leakage Current
IGSS
Reverse
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=0.25mA
VGS=10V, ID=10A
1.0
2.5
V
Static Drain-Source On-State Resistance
Drain–Source On–Voltage
0.12 0.13
Ω
VDS(ON)
VGS=10V, ID=20A
2.8
V
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
1133 1627 pF
Output Capacitance
V
GS=0V, VDS=25V, f=1.0MHz
GS=10V, VDS=75V, ID=20A
332 474
105 174
pF
pF
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note 2)
QG
QGS
QGD
tD(ON)
tR
39.1 55.9 nC
Gate Charge
V
7.5
22
11
nC
nC
ns
ns
ns
ns
Turn-ON Delay Time
Rise Time
25
77 153
VDD=75V, VGS=10V, ID=20A,
RG=9.1Ω
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
33
49
67
97
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
(Note 1)
VSD
IS=20A, VGS=0V
1.5
V
A
Maximum Continuous Drain-Source Diode
Forward Current
IS
ISM
tRR
20
60
Pulsed Drain-Source Current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
A
160
1.1
ns
µC
IS=20A, VGS=0V, dIS/dt=100A/µs
QRR
Notes: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%.
2. Switching characteristics are independent of operating junction temperature.
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QW-R502-915.a
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20N15V
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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