20N40 [UTC]
400V, 23A N-CHANNEL POWER MOSFET; 400V ， 23A的N沟道功率MOSFET
| 型号： | 20N40 |
| 厂家： | 
Unisonic Technologies |
| 描述： | 400V, 23A N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
20N40
Preliminary
Power MOSFET
400V, 23A N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 20N40 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 20N40 is generally applied in high efficiency switch
mode power supplies.
FEATURES
* RDS(ON)=0.2Ω @ VGS=10V,ID=11.5A
* Low Gate Charge (Typical 46nC)
* Low CRSS (Typical 25pF)
* High Switching Speed
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
TO-247
Packing
Tube
Halogen Free
1
2
3
20N40L-T47-T
20N40G-T47-T
G
D
S
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R502-623.b
20N40
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
400
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
VGSS
±30
V
TC=25°C
23
A
Continuous
ID
Drain Current
TC=100°C
13.8
92
A
Pulsed (Note 2)
Avalanche Current (Note 2)
Single Pulsed (Note 3)
Repetitive (Note 2)
IDM
IAR
A
23
A
EAS
EAR
dv/dt
1190
23.5
4.5
mJ
mJ
V/ns
W
Avalanche Energy
Peak Diode Recovery dv/dt (Note 4)
Power Dissipation (TC=25°C)
Derate above 25°C
235
PD
1.8
W/°C
°C
°C
Junction Temperature
TJ
+150
-55~+150
Storage Temperature
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 4.5mH, IAS = 23A, VDD = 50V, RG = 25ꢀ, Starting TJ = 25°C
4. ISD ≤ 23A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
40
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
0.53
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20N40
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
ID=250µA, VGS=0V
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
400
V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=250µA
0.5
V/°C
µA
Drain-Source Leakage Current
IDSS
VDS=400V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
10
Forward
Reverse
+100 nA
-100 nA
Gate- Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=11.5A
2.0
4.0
0.15 0.2
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
ꢀ
CISS
COSS
CRSS
2280 3030 pF
370 490 pF
VGS=0V, VDS=25V, f=1.0MHz
VDS=320V, ID=23A (Note 1, 2)
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge at 10V
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
25
38
pF
QG(TOT)
QGS
QGD
tD(ON)
tR
46
13
18
40
60
nC
nC
nC
ns
90
Rise Time
VDS=200V, ID=23A, RG=25ꢀ
(Note 1, 2)
92 195 ns
120 250 ns
75 160 ns
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
ISM
VSD
trr
23
92
A
A
ISD=23A, VGS=0V
SD=23A, VGS=0V,
dIF/dt=100A/µs (Note 1)
1.5
V
I
110
0.3
ns
µC
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially Independent of Operating Temperature Typical Characteristics
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20N40
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
Period
P. W.
Period
VGS
(Driver)
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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20N40
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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20N40
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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