HJ45H11G-TN3-R [UTC]
Power Field-Effect Transistor,;
| 型号： | HJ45H11G-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总3页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
HJ45H11
PNP SILICON TRANSISTOR
PNP EPITAXIAL PLANAR
TRANSISTOR
DESCRIPTION
The HJ45H11 is designed for various specific and general
1
purpose applications, such as: output and driver stages of
amplifiers operating at frequencies from DC to greater than
1MHz;series, shunt and switching regulators; low and high
frequency inverters/converters; and many others.
TO-252
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
TO-252
Lead Free
Halogen Free
1
2
3
HJ45H11L-TN3-R
HJ45H11G-TN3-R
B
C
E
Tape Reel
Note: Pin Assignment: B: Base
C: Case
E: Emitter
HJ45H11G-TN3-R
(1)Packing Type
(1) R: Tape Reel
(2) TN3: TO-252
(2)Package Type
(3)Green Package
(3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
UTC
HJ45H11
L: Lead Free
G: Halogen Free
Lot Code
Date Code
1
www.unisonic.com.tw
Copyright © 2019 Unisonic Technologies Co., Ltd
1 of 3
QW-R204-036.A
HJ45H11
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
VCEO
VCES
VEBO
IC
RATINGS
UNIT
V
Collector- Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-80
-80
V
-5
V
-10
A
Base Current
IB
-5
A
Power Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
PD
20
W
°C
°C
TJ
+150
-55 ~ +150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
BVCEO IC=-30mA, IB=0
BVCES IC=-1mA, IB=0
BVEBO IE=-1mA, IC=0
-80
-80
-5
V
V
V
ICBO
IEBO
VCB=-80V, VEB=0
VEB=-5V, IC=0
-10
-50
-1
uA
uA
V
Emitter Cut-off Current
Collector-Emitter Saturation Voltage(Note) VCE(SAT) IC=-8A, IB=-0.8A
Base-Emitter Saturation Voltage(Note)
VBE(SAT) IC=-8A, IB=-0.8A
-1.5
V
hFE1
hFE2
COB
VCE=-1V, IC=-2A
VCE=-1V, IC=-4A
VCB=-10V
60
40
DC Current Gain (Note)
Output Capacitance
120
pF
Note: Pulse Test: Pulse Width ≤ 380us, Duty Cycle ≤ 2%.
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
QW-R204-036.A
www.unisonic.com.tw
HJ45H11
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector-Emitter Saturation Voltage
vs. Collector Current
Base-Emitter Saturation Voltage vs.
Collector Current
10
10
IC=10lB
IC=10lB
1
VBE(SAT)
0.1
VCE(SAT)
1
0.01
0.001
0.1
100
10
100
1000
10000
1000
10000
Collector Current, -IC (mA)
Collector Current, -IC (mA)
DC Current Gain vs. Collector
Current
Capacitance Characteristics
1000
100
1000
100
VCE=-1V
10
1
10
1
45 50
20 25 30 35 40
0
5
10
15
100
1000
10000
Collector Current, -IC (mA)
Collector-Base Voltage, -VCB (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONICTECHNOLOGIESCO.,LTD
3 of 3
QW-R204-036.A
www.unisonic.com.tw
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