首页 |元器件品牌

IMZ88 [UTC]

GENERAL PURPOSE DUAL TRANSISTOR; 通用Dual晶体管
IMZ88
型号： IMZ88
厂家： Unisonic Technologies    Unisonic Technologies
描述：

GENERAL PURPOSE DUAL TRANSISTOR
通用Dual晶体管

晶体 小信号双极晶体管 光电二极管 放大器
文件： 总2页 (文件大小：58K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
UTC IMZ88  
DUAL TRANSISTOR  
GENERAL PURPOSE DUAL  
TRANSISTOR  
FEATURES  
*Both a 8550S chip and 8050S chip in a SMT package  
APPLICATIONS  
*Class B push-pull audio amplifier  
*General purpose applications  
MARKING  
EQUIVALENT CIRCUITS  
(5) (6)  
4
5
6
1
(4)  
Tr2  
SOT-26  
Z 8  
Tr1  
3
2
PIN 1 : Collector (1)  
PIN 2: Emitter (2)  
PIN 3: Collector (2)  
PIN 4: Base (2)  
PIN 5: Base (1)  
PIN 6: Emitter (1)  
(3)  
(1)  
(2)  
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )  
RATING  
PARAMETER  
SYMBOL  
UNIT  
Tr1  
-30  
-20  
-5  
Tr2  
30  
20  
5
Collector-Base Voltage  
VCBO  
VCEO  
VEBO  
Ic  
Pc  
Tj  
V
V
V
mA  
mW  
°C  
°C  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
-700  
700  
300  
150  
-65 ~ +150  
TSTG  
ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)  
Tr1  
PARAMETER  
SYMBOL  
BVCBO  
BVCEO  
BVEBO  
ICBO  
TEST CONDITIONS  
Ic=-100µA,IE=0  
Ic=-1mA,IB=0  
IE=-100µA,Ic=0  
VCB=-30V,IE=0  
VEB=-5V,Ic=0  
MIN TYP MAX UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
-30  
-20  
-5  
V
V
V
uA  
nA  
-1  
Emitter cut-off current  
IEBO  
-100  
VCE=-1V,Ic=-1mA  
VCE=-1V,Ic=-150mA  
100  
120  
hFE1  
hFE2  
DC current gain  
110  
400  
1
UTC UNISONIC TECHNOLOGIES CO., LTD.  
QW-R215-005,A  
UTC IMZ88  
DUAL TRANSISTOR  
PARAMETER  
SYMBOL  
hFE3  
TEST CONDITIONS  
VCE=-1V,Ic=-500mA  
MIN TYP MAX UNIT  
40  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Base-emitter saturation voltage  
Current gain bandwidth product  
Output capacitance  
VCE(sat) Ic=-500mA,IB=-50mA  
VBE(sat) Ic=500mA,IB=-50mA  
-0.5  
-1.2  
-1.0  
V
V
V
MHz  
pF  
VBE  
fT  
VCE=-1V,Ic=-10mA  
VCE=-10V,Ic=-50mA  
VCB=10V,IE=0,f=1MHz  
100  
Cob  
9.0  
Tr2  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Ic=100µA,IE=0  
Ic=1mA,IB=0  
IE=100µA,Ic=0  
VCB=30V,IE=0  
VEB=5V,Ic=0  
30  
20  
5
V
V
V
uA  
nA  
1
100  
Emitter Cut-Off Current  
IEBO  
hFE1  
hFE2  
hFE3  
VCE=1V,Ic=1mA  
VCE=1V,Ic=150mA  
VCE=1V,Ic=500mA  
100  
120  
40  
DC Current Gain  
110  
9.0  
400  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
VCE(sat) Ic=500mA,IB=50mA  
VBE(sat) Ic=500mA,IB=50mA  
VBE  
fT  
0.5  
1.2  
1.0  
V
V
V
MHz  
pF  
VCE=1V,Ic=10mA  
VCE=10V,Ic=50mA  
VCB=10V,IE=0,f=1MHz  
100  
Cob  
CLASSIFICATION OF hFE2  
RANK  
C
D
E
RANGE  
120-200  
160-300  
280-400  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
2
UTC UNISONIC TECHNOLOGIES CO., LTD.  
QW-R215-005,A  

相关型号：

IMZ88-C

 Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SOT-26, 6 PIN
UTC

IMZ88-E

 Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SOT-26, 6 PIN
UTC

IMZ88G-AG6-R

 GENERAL PURPOSE DUAL TRANSISTOR)
UTC

IMZ88L-AG6-R

 GENERAL PURPOSE DUAL TRANSISTOR)
UTC

IMZ88_11

 GENERAL PURPOSE DUAL TRANSISTOR)
UTC

IMZ88_15

 GENERAL PURPOSE
UTC

IMZA120R020M1H

 采用TO247-4封装的1200V 20mΩ  CoolSiCTM 碳化硅MOSFET基于先进的沟槽工艺，该工艺经过优化兼具性能与可靠性。与IGBT和MOSFET等传统的硅（Si）基器件相比，SiC MOSFET具有诸多优势，例如1200 V开关器件中最低的栅极电荷和器件电容、体二极管没有反向恢复损耗、关断损耗受温度影响小以及没有拐点电压的导通特性。因此，CoolSiC™碳化硅 MOSFET非常适用于硬开关和谐振开关拓扑结构，如功率因素校正（PFC）电路、双向拓扑以及DC-DC转换器或DC-AC逆变器。
INFINEON

IMZA65R027M1H

 CoolSiC™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性，从而增强了设备性能、稳健性和易用性等独特优势。IMZA65R107M1H 650V CoolSiC™ MOSFET 基于先进的沟槽半导体技术，并经过优化，在毫不折衷的情况下，在应用中实现最低损耗，并在运行中实现最佳可靠性。
INFINEON

IMZA65R030M1H

 CoolSiC™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性，从而增强了设备性能、稳健性和易用性等独特优势。IMZA65R030M1H 650V CoolSiC™ MOSFET 基于先进的沟槽半导体技术，并经过优化，在毫不折衷的情况下，在应用中实现最低损耗，并在运行中实现最佳可靠性。
INFINEON

IMZA65R039M1H

 CoolSiC™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性，从而增强了设备性能、稳健性和易用性等独特优势。IMZA65R039M1H 650V CoolSiC™ MOSFET 基于先进的沟槽半导体技术，并经过优化，在毫不折衷的情况下，在应用中实现最低损耗，并在运行中实现最佳可靠性。
INFINEON

IMZA65R048M1H

 CoolSiC™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性，从而增强了设备性能、稳健性和易用性等独特优势。IMZA65R048M1H 650V CoolSiC™ MOSFET 基于先进的沟槽半导体技术，并经过优化，在毫不折衷的情况下，在应用中实现最低损耗，并在运行中实现最佳可靠性。
INFINEON

IMZA65R057M1H

 CoolSiC™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性，从而增强了设备性能、稳健性和易用性等独特优势。IMZA65R107M1H 650V CoolSiC™ MOSFET 基于先进的沟槽半导体技术，并经过优化，在毫不折衷的情况下，在应用中实现最低损耗，并在运行中实现最佳可靠性。
INFINEON
©2020 ICPDF网 联系我们和版权申明