MMBT5551L-X-AE3-R [UTC]
HIGH VOLTAGE SWITCHING TRANSISTOR; 高电压开关晶体管
| 型号： | MMBT5551L-X-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH VOLTAGE SWITCHING TRANSISTOR |
| 文件： | 总4页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MMBT5551
NPN SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR
FEATURES
* High Collector-Emitter Voltage: VCEO=160V
* High current gain
Lead-free: MMBT5551L
Halogen-free: MMBT5551G
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
Halogen-Free
1
2
3
MMBT5551-x-AE3-R MMBT5551L-x-AE3-R MMBT5551G-x-AE3-R SOT-23
E
B
C
Tape Reel
MARKING
www.unisonic.com.tw
1 of 4
Copyright © 2008 Unisonic Technologies Co., Ltd
QW-R206-010,F
MMBT5551
ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
NPN SILICON TRANSISTOR
PARAMETER
Collector -Base Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
DC Collector Current
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
180
UNIT
V
160
V
6
V
600
mA
mW
°C
°C
Power Dissipation
PD
350
Junction Temperature
Storage Temperature
TJ
+150
-40 ~ +150
TSTG
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
TEST CONDITIONS
IC=100μA, IE=0
IC=1mA, IB=0
MIN
180
160
6
TYP
MAX
UNIT
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
V
IE=10μA, IC=0
VCB=120V, IE=0
VBE=4V, IC =0
VCE=5V, IC =1mA
V
ICBO
50
50
nA
nA
Emitter Cut-off Current
IEBO
80
80
80
DC Current Gain(note)
hFE
V
V
CE=5V, IC =10mA
CE=5V, IC =50mA
160
400
IC=10mA, IB=1mA
IC=50mA, IB=5mA
0.15
0.2
1
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(SAT)
V
V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VBE(SAT)
1
Current Gain Bandwidth Product
Output Capacitance
fT
VCE=10V, IC =10mA, f=100MHz
VCB=10V, IE=0, f=1MHz
IC=0.25mA, VCE=5V
RS=1kΩ, f=10Hz ~ 15.7kHz
100
300
6.0
MHz
pF
Cob
Noise Figure
NF
8
dB
Note: Pulse test: PW<300μs, Duty Cycle<2%
CLASSIFICATION OF hFE
RANK
A
B
C
RANGE
80-170
150-240
200-400
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R206-010,F
www.unisonic.com.tw
MMBT5551
■ TYPICAL CHARACTERICS
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R206-010,F
www.unisonic.com.tw
MMBT5551
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R206-010,F
www.unisonic.com.tw
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