-SL10NIA300S704-LS78F98Z [VINCOTECH]
Low collector emitter saturation voltage;High speed and smooth switching;
| 型号： | -SL10NIA300S704-LS78F98Z |
| 厂家： | 
VINCOTECH |
| 描述： | Low collector emitter saturation voltage;High speed and smooth switching |
| 文件： | 总29页 (文件大小：8818K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B0-SL10NIA300S704-LS78F98Z
datasheet
flowNPC S3
950 V / 300 A
Features
flow S3 12 mm housing
● Low inductive mid-power package
● Optimized components for 1500 V applications
● Improved LVRT performance
Schematic
Target applications
● Solar Inverters
Types
● B0-SL10NIA300S704-LS78F98Z
Copyright Vincotech
1
27 Jan. 2022 / Revision 3
B0-SL10NIA300S704-LS78F98Z
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Buck Switch
VCES
Collector-emitter voltage
950
196
600
393
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Buck Diode
VRRM
Peak repetitive reverse voltage
950
101
400
177
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Boost Switch
VCES
Collector-emitter voltage
950
148
400
283
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Copyright Vincotech
2
27 Jan. 2022 / Revision 3
B0-SL10NIA300S704-LS78F98Z
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Diode
VRRM
Peak repetitive reverse voltage
950
101
400
177
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Boost Sw. Inv. Diode
VRRM
Peak repetitive reverse voltage
950
101
400
177
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Creepage distance
Clearance
Visol
DC Test Voltage*
tp = 2 s
6000
11,65
10,18
≥ 600
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
3
27 Jan. 2022 / Revision 3
B0-SL10NIA300S704-LS78F98Z
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,00501 25
25
4,35
5,1
5,85
V
V
1,9
2,35(1)
VCEsat
Collector-emitter saturation voltage
15
300
125
2,23
2,31
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
950
0
25
6
µA
nA
Ω
20
25
300
0,5
19500
417
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 100 kHz
0
25
25
25
Reverse transfer capacitance
Gate charge
60
±15
0
690
Thermal
λpaste = 5,2 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,24
K/W
25
214,4
214,4
214,72
24,64
26,88
27,52
170,88
203,84
212,8
26,29
50,25
61,85
7,73
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 4 Ω
Rgoff = 4 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
200
tf
125
150
25
ns
QrFWD=5,72 µC
QrFWD=12 µC
QrFWD=14 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
8,96
mWs
mWs
9,14
6,02
Eoff
125
150
10,13
11,42
Copyright Vincotech
4
27 Jan. 2022 / Revision 3
B0-SL10NIA300S704-LS78F98Z
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Diode
Static
25
2,1
2,64
2,44
2,36
2,8(1)
VF
IR
Forward voltage
200
125
150
V
Reverse leakage current
Thermal
Vr = 950 V
25
8
µA
λpaste = 5,2 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,54
K/W
25
131,6
188,79
203,87
130,35
171,25
185,89
5,72
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=6992 A/µs
di/dt=6819 A/µs
di/dt=6814 A/µs
Qr
Recovered charge
±15
600
200
125
150
25
12
μC
14
1,95
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
4,34
mWs
A/µs
5,18
6440
5535
5499
(dirf/dt)max
125
150
Copyright Vincotech
5
27 Jan. 2022 / Revision 3
B0-SL10NIA300S704-LS78F98Z
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,00334 25
25
4,35
5,1
5,85
V
V
1,83
2,06
2,11
2,35(1)
VCEsat
Collector-emitter saturation voltage
15
200
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
950
0
25
4
µA
nA
Ω
20
25
200
0,75
13000
278
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 100 kHz
0
25
25
25
Reverse transfer capacitance
Gate charge
40
±15
0
460
Thermal
λpaste = 5,2 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,34
K/W
25
154,24
155,2
156,16
23,04
26,24
26,24
125,12
147,84
153,92
29,93
54,38
65,41
7,44
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 4 Ω
Rgoff = 4 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
200
tf
125
150
25
ns
QrFWD=5,52 µC
QrFWD=11,68 µC
QrFWD=14,09 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
8,33
mWs
mWs
8,57
5,56
Eoff
125
150
9,29
10,33
Copyright Vincotech
6
27 Jan. 2022 / Revision 3
B0-SL10NIA300S704-LS78F98Z
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
2,1
2,64
2,44
2,36
2,8(1)
VF
IR
Forward voltage
200
125
150
V
Reverse leakage current
Thermal
Vr = 950 V
25
8
µA
λpaste = 5,2 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,54
K/W
25
107,62
158,66
175,89
141,68
186,21
204,13
5,52
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=6438 A/µs
di/dt=6133 A/µs
di/dt=6024 A/µs
Qr
Recovered charge
±15
600
200
125
150
25
11,68
14,09
1,76
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
3,88
mWs
A/µs
4,78
4525
(dirf/dt)max
125
150
3268
3188
Copyright Vincotech
7
27 Jan. 2022 / Revision 3
B0-SL10NIA300S704-LS78F98Z
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Sw. Inv. Diode
Static
25
2,1
2,64
2,44
2,36
2,8(1)
VF
IR
Forward voltage
200
125
150
V
Reverse leakage current
Vr = 950 V
25
8
µA
Thermal
λpaste = 5,2 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,54
K/W
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
8
27 Jan. 2022 / Revision 3
B0-SL10NIA300S704-LS78F98Z
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
800
800
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
600
400
200
0
600
400
200
0
0
1
2
3
4
5
0
1
2
3
4
5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
200
10
-1
10
150
100
50
-2
10
-3
10
0,5
0,2
0,1
-4
0,05
0,02
0,01
0,005
0
10
-5
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
250
18
μs
V
D =
tp / T
0,242
25 °C
VCE
=
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
2,73E-02
6,54E-02
7,62E-02
6,25E-02
1,02E-02
4,22E+00
1,10E+00
1,31E-01
2,86E-02
1,84E-03
Copyright Vincotech
9
27 Jan. 2022 / Revision 3
B0-SL10NIA300S704-LS78F98Z
datasheet
Buck Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
10
27 Jan. 2022 / Revision 3
B0-SL10NIA300S704-LS78F98Z
datasheet
Buck Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
600
500
400
300
200
100
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,536
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
7,69E-02
9,02E-02
2,58E-01
8,45E-02
2,68E-02
3,35E+00
4,45E-01
5,60E-02
9,21E-03
8,82E-04
Copyright Vincotech
11
27 Jan. 2022 / Revision 3
B0-SL10NIA300S704-LS78F98Z
datasheet
Boost Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
600
600
VGE
:
7 V
8 V
500
400
300
200
100
0
500
400
300
200
100
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
-1
75
50
25
0
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
10
10
tp(s)
V
GE(V)
tp
=
250
8
μs
D =
tp / T
0,336
25 °C
VCE
=
V
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
6,56E-02
1,54E-01
9,21E-02
1,13E-02
1,31E-02
1,61E+00
1,15E-01
2,31E-02
2,30E-03
3,26E-04
Copyright Vincotech
12
27 Jan. 2022 / Revision 3
B0-SL10NIA300S704-LS78F98Z
datasheet
Boost Switch Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
13
27 Jan. 2022 / Revision 3
B0-SL10NIA300S704-LS78F98Z
datasheet
Boost Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
600
500
400
300
200
100
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,536
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
7,69E-02
9,02E-02
2,58E-01
8,45E-02
2,68E-02
3,35E+00
4,45E-01
5,60E-02
9,21E-03
8,82E-04
Copyright Vincotech
14
27 Jan. 2022 / Revision 3
B0-SL10NIA300S704-LS78F98Z
datasheet
Boost Sw. Inv. Diode Characteristics
figure 15.
FWD
figure 16.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
600
500
400
300
200
100
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,536
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
7,69E-02
9,02E-02
2,58E-01
8,45E-02
2,68E-02
3,35E+00
4,45E-01
5,60E-02
9,21E-03
8,82E-04
Copyright Vincotech
15
27 Jan. 2022 / Revision 3
B0-SL10NIA300S704-LS78F98Z
datasheet
Thermistor Characteristics
figure 17.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
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27 Jan. 2022 / Revision 3
B0-SL10NIA300S704-LS78F98Z
datasheet
Buck Switching Characteristics
figure 18.
IGBT
figure 19.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
20,0
17,5
15,0
12,5
10,0
7,5
30
25
20
15
10
5
Eoff
Eoff
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
5,0
Eoff
2,5
0,0
0
0,0
0
50
100
150
200
250
300
350
400
IC(A)
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
Ω
125 °C
150 °C
600
±15
200
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
4
figure 20.
FWD
figure 21.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
Erec
Erec
Erec
Erec
Erec
Erec
0
50
100
150
200
250
300
350
400
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
150 °C
600
±15
200
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
17
27 Jan. 2022 / Revision 3
B0-SL10NIA300S704-LS78F98Z
datasheet
Buck Switching Characteristics
figure 22.
IGBT
figure 23.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(on)
td(off)
-1
10
-1
10
tf
tr
tf
tr
-2
10
-2
10
0
50
100
150
200
250
300
350
400
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
4
°C
V
150
600
±15
200
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 24.
FWD
figure 25.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
trr
trr
0
50
100
150
200
250
300
350
400
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
150 °C
600
±15
200
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
18
27 Jan. 2022 / Revision 3
B0-SL10NIA300S704-LS78F98Z
datasheet
Buck Switching Characteristics
figure 26.
FWD
figure 27.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
20,0
17,5
15,0
12,5
10,0
7,5
20,0
17,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
Qr
Qr
5,0
5,0
2,5
2,5
0,0
0,0
0,0
0
50
100
150
200
250
300
350
400
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
150 °C
600
±15
200
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 28.
FWD
figure 29.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
250
200
150
100
50
350
300
250
200
150
100
50
IRM
IRM
IRM
IRM
IRM
IRM
0
0
0,0
0
50
100
150
200
250
300
350
400
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
150 °C
600
±15
200
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
19
27 Jan. 2022 / Revision 3
B0-SL10NIA300S704-LS78F98Z
datasheet
Buck Switching Characteristics
figure 30.
FWD
figure 31.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
9000
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
8000
dirr/dt ──────
7000
6000
5000
4000
3000
2000
1000
0
0
50
100
150
200
250
300
350
400
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
150 °C
600
±15
200
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 32.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
700
IC MAX
600
500
400
300
200
100
0
0
200
400
600
800
1000
1200
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
Copyright Vincotech
20
27 Jan. 2022 / Revision 3
B0-SL10NIA300S704-LS78F98Z
datasheet
Boost Switching Characteristics
figure 33.
IGBT
figure 34.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
20,0
17,5
15,0
12,5
10,0
7,5
25
20
15
10
5
Eon
Eoff
Eon
Eon
Eoff
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
5,0
2,5
0,0
0
0,0
0
50
100
150
200
250
300
350
400
IC(A)
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
Ω
125 °C
150 °C
600
±15
200
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
4
figure 35.
FWD
figure 36.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Erec
Erec
Erec
Erec
Erec
Erec
0
50
100
150
200
250
300
350
400
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
150 °C
600
±15
200
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
21
27 Jan. 2022 / Revision 3
B0-SL10NIA300S704-LS78F98Z
datasheet
Boost Switching Characteristics
figure 37.
IGBT
figure 38.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(on)
td(off)
-1
10
tf
tr
-1
10
tf
tr
-2
10
-3
10
-2
10
0
50
100
150
200
250
300
350
400
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
4
°C
V
150
600
±15
200
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 39.
FWD
figure 40.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
trr
trr
0
50
100
150
200
250
300
350
400
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
150 °C
600
±15
200
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
22
27 Jan. 2022 / Revision 3
B0-SL10NIA300S704-LS78F98Z
datasheet
Boost Switching Characteristics
figure 41.
FWD
figure 42.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
20,0
17,5
15,0
12,5
10,0
7,5
20,0
17,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
Qr
Qr
5,0
5,0
2,5
2,5
0,0
0,0
0,0
0
50
100
150
200
250
300
350
400
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
150 °C
600
±15
200
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 43.
FWD
figure 44.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
200
175
150
125
100
75
300
250
200
150
100
50
IRM
IRM
IRM
IRM
IRM
50
IRM
25
0
0
0,0
0
50
100
150
200
250
300
350
400
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
150 °C
600
±15
200
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
23
27 Jan. 2022 / Revision 3
B0-SL10NIA300S704-LS78F98Z
datasheet
Boost Switching Characteristics
figure 45.
FWD
figure 46.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
12000
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
10000
8000
6000
4000
2000
0
0
50
100
150
200
250
300
350
400
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
150 °C
600
±15
200
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 47.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
450
IC MAX
400
350
300
250
200
150
100
50
0
0
200
400
600
800
1000
1200
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
Copyright Vincotech
24
27 Jan. 2022 / Revision 3
B0-SL10NIA300S704-LS78F98Z
datasheet
Switching Definitions
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 50.
IGBT
figure 51.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
25
27 Jan. 2022 / Revision 3
B0-SL10NIA300S704-LS78F98Z
datasheet
Switching Definitions
figure 52.
FWD
figure 53.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
26
27 Jan. 2022 / Revision 3
B0-SL10NIA300S704-LS78F98Z
datasheet
Ordering Code
Marking
Version
Ordering Code
With thermal paste (5,2 W/mK, PTM6000HV)
B0-SL10NIA300S704-LS78F98Z-/7/
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
Function
DC-
DC-
DC-
DC-
DC-
GND
GND
GND
GND
GND
GND
DC+
DC+
DC+
DC+
DC+
G11
S11
S12
G12
G13
S13
G14
S14
Ph
52,4
46,9
44,2
41,5
38,8
32,95
30,25
27,55
24,85
22,15
19,45
13,7
11
2
0
3
0
4
0
5
0
6
0
7
0
8
0
9
0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
0
0
0
0
8,3
0
5,6
0
0
0
1
14,5
17,5
39,25
39,25
37,55
40,55
20,55
23,55
50,4
50,4
50,4
50,4
50,4
50,4
50,4
47,4
50,4
14,1
29,2
0
8,55
11,55
26,65
25,65
39,95
38,95
23,65
26,35
29,05
31,75
34,45
37,15
39,85
52,4
52,4
40,75
10,1
Ph
Ph
Ph
Ph
Ph
Ph
Therm1
Therm2
N
P
Copyright Vincotech
27
27 Jan. 2022 / Revision 3
B0-SL10NIA300S704-LS78F98Z
datasheet
Pinout
DC+
12-16
T11
D11
G11
17
S11
18
P
35
D15
D16
T12
T13
D12
G12
20
S12
19
GND
6-11
Ph
25-31
D13
G13
21
S13
22
N
34
T14
D14
G14
23
Rt
S14
24
Therm1
32
Therm2
33
DC-
1-5
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T14
D15, D16
T12, T13
D14, D11
D13, D12
Rt
IGBT
FWD
950 V
950 V
950 V
950 V
950 V
300 A
200 A
200 A
200 A
200 A
Buck Switch
Buck Diode
IGBT
Boost Switch
Boost Diode
FWD
FWD
Boost Sw. Inv. Diode
Thermistor
Thermistor
Copyright Vincotech
28
27 Jan. 2022 / Revision 3
B0-SL10NIA300S704-LS78F98Z
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 45
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow S3 packages see vincotech.com website.
Package data
Package data for flow S3 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
B0-SL10NIA300S704-LS78F98Z-D1-14
B0-SL10NIA300S704-LS78F98Z-D2-14
B0-SL10NIA300S704-LS78F98Z-D3-14
7 Jan. 2021
7 Jul. 2021
27 Jan. 2022
Module marking is updated with UL logo, product is
unchanged
Correct function names in Pin table
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
29
27 Jan. 2022 / Revision 3
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