-SL12PPA040SH-PC88L41Z [VINCOTECH]
Easy paralleling;High speed switching;Low switching losses;
| 型号： | -SL12PPA040SH-PC88L41Z |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;High speed switching;Low switching losses |
| 文件： | 总45页 (文件大小：14859K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B0-SL12PPA040SH-PC88L41Z
datasheet
flowPIM S3 + 3xPFC
1200 V / 40 A
Topology features
flow S3 12 mm housing
● Current Synthesizing PFC + Booster + Inverter
● Integrated DC Link capacitors
● Kelvin Emitter for improved switching performance
● Temperature sensor
● Thin Al2O3 for easy thermal design
Component features
● Easy paralleling
● High speed switching
● Low switching losses
Housing features
● Base isolation: Al2O3
● CTI600 housing material
● Compact, baseplate-less housing
● VINcoPress Technology
Schematic
● Thermo-mechanical push-and-pull force relief
● Solder pin
Target applications
● Embedded Drives
● Heat Pumps
● HVAC
● Industrial Drives
Types
● B0-SL12PPA040SH-PC88L41Z
Copyright Vincotech
1
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
1200
50
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
120
137
±20
10
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
1200
30
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
170
145
73
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
175
Boost Switch
VDSS
Drain-source voltage
1200
42
V
A
ID
Drain current (DC current)
Peak drain current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IDM
tp limited by Tjmax
Tj = Tjmax
120
A
Ptot
Total power dissipation
87
W
-4 / 15
-8 / 19
175
VGSS
Gate-source voltage
V
dynamic
Tjmax
Maximum Junction Temperature
°C
Copyright Vincotech
2
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Diode
VRRM
Peak repetitive reverse voltage
1200
41
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
Ptot
tp limited by Tjmax
136
200
106
175
A
Single Half Sine Wave,
tp = 10 ms
Tj = 25 °C
Ts = 80 °C
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Half-Bridge Switch
VDSS
Drain-source voltage
1200
22
V
A
ID
Drain current (DC current)
Peak drain current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IDM
tp limited by Tjmax
Tj = Tjmax
80
A
Ptot
Total power dissipation
60
W
-4 / 15
-8 / 19
175
VGSS
Gate-source voltage
V
dynamic
Tjmax
Maximum Junction Temperature
°C
AC Diode
VRRM
Peak repetitive reverse voltage
1600
55
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
270
370
69
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Copyright Vincotech
3
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Mux Switch
VCES
Collector-emitter voltage
1200
V
A
(1)
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts <= 80 °C
Ts = 80 °C
Tj = 150 °C
20
ICRM
tp limited by Tjmax
Tj = Tjmax
20
55
A
Ptot
W
V
VGES
Gate-emitter voltage
±20
9,5
175
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
(1)
limited by ICRM
Mux Diode
VRRM
Peak repetitive reverse voltage
1200
V
A
(2)
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts <= 80 °C
Ts = 80 °C
20
IFRM
tp limited by Tjmax
Tj = Tjmax
20
43
A
Ptot
W
°C
Tjmax
Maximum junction temperature
175
(2)
limited by IFRM
Capacitor (DC)
VMAX
Maximum DC voltage
1000
V
Top
Operation Temperature
0 ... 125
°C
Copyright Vincotech
4
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
tp = 2 s
6000
2500
9,4
V
AC Voltage
tp = 1 min
V
mm
mm
7,46
≥ 600
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
5
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0015
40
25
5,3
5,8
6,3
V
V
25
1,78
1,94
2,23
2,32
2,42(3)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
5
µA
nA
Ω
20
120
None
2330
150
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
130
VCC = 960 V
15
40
185
Thermal
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(4)
Dynamic
0,69
K/W
Rth(j-s)
25
70,35
70,92
70,49
23,1
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
25,45
26,39
162,3
222,29
234,94
40,68
83,87
98,68
1,89
Rgon = 8 Ω
Rgoff = 8 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
40
tf
125
150
25
ns
QrFWD=2,12 µC
QrFWD=4,47 µC
QrFWD=5,34 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
2,78
mWs
mWs
3,17
1,65
Eoff
125
150
2,86
3,2
Copyright Vincotech
6
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
2,53
2,67
2,58
2,62(3)
VF
IR
Forward voltage
35
125
150
25
V
2,62(3)
60
Reverse leakage current
Thermal
Vr = 1200 V
µA
150
2700
5500
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(4)
Dynamic
1,31
K/W
Rth(j-s)
25
38,6
47,09
50,15
170,77
338,21
376,13
2,12
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=1850 A/µs
di/dt=1840 A/µs
di/dt=1910 A/µs
Qr
Recovered charge
±15
600
40
125
150
25
4,47
μC
5,34
0,689
1,69
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
2,03
1178,39
791,61
662,6
(dirf/dt)max
125
150
Copyright Vincotech
7
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Boost Switch
Static
25
22,4
1,8
34,2
42,1
46,4
41,6(3)
rDS(on)
Drain-source on-state resistance
15
40
125
150
mΩ
VGS(th)
IGSS
IDSS
rg
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
Gate charge
VDS = VGS
0
0,0115
25
25
25
2,5
10
3,6
250
19
V
15
0
0
nA
µA
Ω
1200
1
1,7
118
3357
129
8
Qg
-4/15
800
40
0
25
25
25
nC
Ciss
Coss
Crss
VSD
Short-circuit input capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Diode forward voltage
f = 100 kHz
0
0
1000
pF
V
20
4,6
Thermal
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(4)
Dynamic
1,09
K/W
Rth(j-s)
25
31,36
25,93
25,01
20,23
18,12
17,55
146,07
165,29
170,61
10,37
11,05
10,94
0,698
0,587
0,567
0,487
0,503
0,512
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 16 Ω
Rgoff = 16 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
0/15
700
30
tf
125
150
25
ns
QrFWD=0,093 µC
QrFWD=0,104 µC
QrFWD=0,108 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
8
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
1,59
1,89
2,02
1,8(3)
400
VF
IR
Forward voltage
30
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
70
µA
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(4)
Dynamic
0,9
K/W
Rth(j-s)
25
10,95
12,21
IRM
Peak recovery current
125
150
25
A
12,58
15,81
trr
Reverse recovery time
125
150
25
15,65
ns
15,84
0,093
di/dt=1802 A/µs
di/dt=2141 A/µs
di/dt=2180 A/µs
Qr
Recovered charge
0/15
700
30
125
150
25
0,104
μC
0,108
0,014
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
0,018
mWs
A/µs
0,019
1969,56
2090,45
2244,81
(dirf/dt)max
125
150
Copyright Vincotech
9
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Half-Bridge Switch
Static
25
81,5
105
117
90(3)
rDS(on)
Drain-source on-state resistance
15
20
125
150
mΩ
VGS(th)
IGSS
IDSS
rg
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
VDS = VGS
0
0,005
25
25
25
1,7
2,5
10
4
V
15
0
0
250
100
nA
µA
Ω
1200
1
10,5
54
Qg
Gate charge
-4/15
800
20
0
25
25
25
nC
Ciss
Coss
Crss
VSD
Short-circuit input capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Diode forward voltage
1350
58
f = 1 Mhz
0
0
1000
pF
V
3
10
4,5
Thermal
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(4)
1,57
K/W
Rth(j-s)
Copyright Vincotech
10
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Dynamic
25
24,17
22,14
21,58
14,65
13,37
13,21
71,33
79,12
80,83
16,95
16,92
16,27
0,225
0,256
0,274
0,085
0,088
0,087
8,65
td(on)
Turn-on delay time
125
150
25
ns
ns
tr
td(off)
tf
Rise time
125
150
25
Rgon = 16 Ω
Rgoff = 16 Ω
Turn-off delay time
125
150
25
ns
Fall time
125
150
25
ns
QrFWD=0,071 µC
QrFWD=0,217 µC
QrFWD=0,264 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
Peak recovery current
Reverse recovery time
Recovered charge
125
150
25
mWs
mWs
A
Eoff
-4/15
600
15
125
150
25
IRRM
125
150
25
11,79
13,59
15,07
42,64
44,12
0,071
0,217
0,264
0,013
0,068
0,079
1483,58
462,05
1008,94
trr
125
150
25
ns
di/dt=1290 A/µs
di/dt=1472 A/µs
di/dt=1441 A/µs
Qr
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
11
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC Diode
Static
25
1,1
1,5(3)
VF
IR
Forward voltage
28
125
150
25
1,04
1,03
V
100
Reverse leakage current
Thermal
Vr = 1600 V
µA
150
1000
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(4)
1,02
K/W
Rth(j-s)
Mux Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,001
10
25
5,4
6
6,6
V
V
25
1,66
1,9
2,1(3)
VCEsat
Collector-emitter saturation voltage
15
125
150
1,96
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
35
µA
nA
Ω
20
200
None
2000
86
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
0
10
25
25
Reverse transfer capacitance
Gate charge
23
VCC = 600 V
0/15
10
80
Thermal
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(4)
1,71
K/W
Rth(j-s)
Copyright Vincotech
12
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Mux Diode
Static
25
1,61
1,69
1,7
1,9(3)
VF
IR
Forward voltage
10
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
25
µA
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(4)
2,23
K/W
Rth(j-s)
Capacitor (DC)
Static
DC bias voltage =
0 V
C
Capacitance
25
47
nF
%
Tolerance
-10
10
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(3)
Value at chip level
(4)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
13
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
100
100
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
75
50
25
0
75
50
25
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
250
150
μs
°C
25 °C
VGE
Tj =
V
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
35
10
30
25
20
15
10
5
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2
4
6
8
10
12
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
0,694
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
6,77E-02
1,39E-01
3,75E-01
7,19E-02
4,13E-02
2,32E+00
3,13E-01
5,01E-02
7,40E-03
5,57E-04
Copyright Vincotech
14
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
10µs
100µs
1ms
1
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
15
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
100
75
50
25
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
6
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,308
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
9,18E-02
2,59E-01
6,72E-01
1,98E-01
8,79E-02
1,91E+00
2,04E-01
4,91E-02
5,31E-03
6,11E-04
Copyright Vincotech
16
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Boost Switch Characteristics
figure 8.
MOSFET
figure 9.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
125
125
100
75
VGS
:
-4 V
-2 V
0 V
100
75
50
25
0
2 V
4 V
50
6 V
8 V
10 V
12 V
14 V
16 V
18 V
20 V
25
0
-25
-50
-75
-100
-125
0
1
2
3
4
5
6
7
8
-10,0 -7,5
-5,0 -2,5
0,0
2,5
5,0
7,5
10,0 12,5
V
DS(V)
VDS(V)
tp
=
=
tp
=
250
14
μs
V
250
150
μs
°C
25 °C
VGS
Tj =
125 °C
150 °C
Tj:
VGS from -4 V to 20 V in steps of 2 V
figure 10.
MOSFET
figure 11.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
1
70
10
60
50
40
30
20
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
2
4
6
8
10
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
1,092
25 °C
VDS
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
MOSFET thermal model values
R (K/W)
τ (s)
7,99E-02
1,75E-01
5,57E-01
1,94E-01
8,64E-02
2,12E+00
1,98E-01
3,73E-02
7,57E-03
8,67E-04
Copyright Vincotech
17
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Boost Switch Characteristics
figure 12.
MOSFET
Safe operating area
ID = f(VDS
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
DS(V)
D =
single pulse
Ts =
80
14
°C
V
VGS
=
Tj =
Tjmax
Copyright Vincotech
18
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Boost Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
80
60
40
20
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,896
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
9,26E-02
1,76E-01
4,37E-01
1,44E-01
4,57E-02
2,33E+00
2,23E-01
3,58E-02
5,87E-03
1,02E-03
Copyright Vincotech
19
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Half-Bridge Switch Characteristics
figure 15.
MOSFET
figure 16.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
60
60
50
VGS
:
-4 V
-2 V
0 V
50
40
30
20
10
0
40
2 V
30
4 V
6 V
20
8 V
10 V
12 V
14 V
16 V
18 V
20 V
10
0
-10
-20
-30
-40
-50
-60
0,0
2,5
5,0
7,5
10,0
12,5
-10,0 -7,5
-5,0
-2,5
0,0
2,5
5,0
7,5
10,0 12,5
V
DS(V)
VDS(V)
tp
=
=
tp
=
250
14
μs
V
250
150
μs
°C
25 °C
VGS
Tj =
125 °C
150 °C
Tj:
VGS from -4 V to 20 V in steps of 2 V
figure 17.
MOSFET
figure 18.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
1
25
10
20
15
10
5
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
2
4
6
8
10
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
1,571
25 °C
VDS
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
MOSFET thermal model values
R (K/W)
τ (s)
1,03E-01
3,58E-01
6,72E-01
2,91E-01
1,48E-01
9,16E-01
9,48E-02
2,46E-02
4,80E-03
7,19E-04
Copyright Vincotech
20
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Half-Bridge Switch Characteristics
figure 19.
MOSFET
Safe operating area
ID = f(VDS
)
100
10
1
0,1
0,01
1
10
100
1000
10000
V
DS(V)
D =
single pulse
Ts =
80
14
°C
V
VGS
=
Tj =
Tjmax
Copyright Vincotech
21
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
AC Diode Characteristics
figure 20.
Rectifier
figure 21.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
10
10
10
10
VF(V)
tp(s)
tp
=
250
D =
tp / T
1,017
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
Rectifier thermal model values
R (K/W)
τ (s)
5,73E-02
1,49E-01
5,23E-01
1,80E-01
1,08E-01
3,53E+00
4,28E-01
5,80E-02
1,38E-02
1,76E-03
Copyright Vincotech
22
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Mux Switch Characteristics
figure 22.
IGBT
figure 23.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
30
30
VGE
:
7 V
8 V
25
20
15
10
5
25
20
15
10
5
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0
0
0
1
2
3
4
5
6
1
2
3
4
5
6
V
CE(V)
VCE(V)
tp
VGE
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 24.
IGBT
figure 25.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
10,0
10
0
7,5
5,0
2,5
0,0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
1,714
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,07E-01
3,68E-01
7,94E-01
2,71E-01
1,75E-01
1,57E+00
1,28E-01
3,08E-02
4,04E-03
4,31E-04
Copyright Vincotech
23
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Mux Switch Characteristics
figure 26.
IGBT
figure 27.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
100
17,5
15,0
12,5
10,0
7,5
10µs
10
1
100µs
1ms
5,0
10ms
0,1
0,01
100ms
DC
2,5
0,0
1
10
100
1000
10000
0
10
20
30
40
50
60
70
80
90
V
CE(V)
Qg(μC)
D =
IC
=
single pulse
10
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
24
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Mux Diode Characteristics
figure 28.
FWD
figure 29.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
30
25
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,231
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
1,16E-01
3,27E-01
9,79E-01
5,15E-01
2,94E-01
1,53E+00
1,36E-01
3,22E-02
5,83E-03
8,53E-04
Copyright Vincotech
25
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Thermistor Characteristics
figure 30.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
26
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Inverter Switching Characteristics
figure 31.
IGBT
figure 32.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
10
6
5
4
3
2
1
0
Eon
Eon
Eon
8
Eon
Eon
6
Eoff
Eoff
Eoff
Eoff
Eon
4
Eoff
Eoff
2
0
0
10
20
30
40
50
60
70
80
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
Ω
125 °C
150 °C
600
±15
40
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
8
figure 33.
FWD
figure 34.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
40
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
27
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Inverter Switching Characteristics
figure 35.
IGBT
figure 36.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
td(off)
tf
-1
10
-1
10
tf
td(on)
tr
tr
-2
10
-2
10
0
10
20
30
40
50
60
70
80
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
8
°C
V
150
600
±15
40
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 37.
FWD
figure 38.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
40
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
28
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Inverter Switching Characteristics
figure 39.
FWD
figure 40.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
40
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 41.
FWD
figure 42.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
40
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
29
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Inverter Switching Characteristics
figure 43.
FWD
figure 44.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
2250
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
2000
dirr/dt ──────
1750
1500
1250
1000
750
500
250
0
0
10
20
30
40
50
60
70
80
IC(A)
0
5
10
15
20
25
30
35
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
40
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 45.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
90
IC MAX
80
70
60
50
40
30
20
10
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
8
8
Ω
Copyright Vincotech
30
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Boost Switching Characteristics
figure 46.
MOSFET
figure 47.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of MOSFET turn on gate resistor
E = f(ID)
E = f(Rg)
1,50
1,25
1,00
0,75
0,50
0,25
0,00
2,5
2,0
1,5
1,0
0,5
0,0
Eon
Eon
Eoff
Eoff
Eon
Eoff
Eon
Eon
Eon
Eoff
Eoff
Eoff
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
700
0/15
16
V
V
Ω
Ω
125 °C
150 °C
700
0/15
30
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
16
figure 48.
FWD
figure 49.
FWD
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of MOSFET turn on gate resistor
Erec = f(ID)
Erec = f(Rg)
0,025
0,020
0,015
0,010
0,005
0,000
0,10
0,08
0,06
0,04
0,02
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
700
0/15
16
V
V
Ω
125 °C
150 °C
700
0/15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
31
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Boost Switching Characteristics
figure 50.
MOSFET
figure 51.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of MOSFET turn on gate resistor
t = f(ID)
t = f(Rg)
0
10
0
10
td(off)
td(off)
-1
10
-1
10
td(on)
tr
tf
td(on)
tr
-2
10
-2
10
tf
-3
10
-3
10
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
700
0/15
16
°C
V
150
700
0/15
30
°C
VDS
=
=
=
=
VDS
=
=
=
V
V
A
VGS
Rgon
Rgoff
VGS
ID
V
Ω
Ω
16
figure 52.
FWD
figure 53.
FWD
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of MOSFET turn on gate resistor
trr = f(ID)
trr = f(Rgon)
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,030
0,025
0,020
0,015
0,010
0,005
0,000
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
=
=
=
At
700
V
V
Ω
At
700
0/15
30
V
V
A
25 °C
25 °C
VGS
VGS
ID
0/15
16
125 °C
150 °C
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
32
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Boost Switching Characteristics
figure 54.
FWD
figure 55.
FWD
Typical recovered charge as a function of drain current
Typical recovered charge as a function of MOSFET turn on gate resistor
Qr = f(ID)
Qr = f(Rgon)
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,225
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
=
=
=
At
700
V
V
Ω
At
700
0/15
30
V
V
A
25 °C
25 °C
VGS
VGS
ID
0/15
16
125 °C
150 °C
125 °C
150 °C
Tj:
Tj:
Rgon
figure 56.
FWD
figure 57.
FWD
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of MOSFET turn on gate resistor
IRM = f(ID)
IRM = f(Rgon)
15,0
12,5
10,0
7,5
35
30
25
20
15
10
5
IRM
IRM
IRM
5,0
2,5
IRM
IRM
IRM
0,0
0
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
700
V
V
Ω
At
700
0/15
30
V
25 °C
25 °C
0/15
16
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
33
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Boost Switching Characteristics
figure 58.
FWD
figure 59.
FWD
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgon)
4000
10000
8000
6000
4000
2000
0
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
3500
3000
2500
2000
1500
1000
500
0
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
VGS
ID
=
=
=
At
700
V
V
Ω
At
700
V
V
A
25 °C
25 °C
VGS
0/15
16
125 °C
150 °C
0/15
30
125 °C
150 °C
Tj:
Tj:
Rgon
figure 60.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
90
ID MAX
80
70
60
50
40
30
20
10
0
0
250
500
750
1000
1250
1500
V
DS(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
16
16
Ω
Copyright Vincotech
34
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Half-Bridge Switching Characteristics
figure 61.
MOSFET
figure 62.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of MOSFET turn on gate resistor
E = f(ID)
E = f(Rg)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
600
-4/15
16
V
V
Ω
Ω
125 °C
150 °C
600
-4/15
15
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
16
figure 63.
MOSFET
figure 64.
MOSFET
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of MOSFET turn on gate resistor
Erec = f(ID)
Erec = f(Rg)
0,125
0,100
0,075
0,050
0,025
0,000
0,12
0,10
0,08
0,06
0,04
0,02
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
600
-4/15
16
V
V
Ω
125 °C
150 °C
600
-4/15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
35
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Half-Bridge Switching Characteristics
figure 65.
MOSFET
figure 66.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of MOSFET turn on gate resistor
t = f(ID)
t = f(Rg)
0
10
0
10
td(off)
-1
10
-1
10
td(off)
td(on)
tr
td(on)
tr
tf
-2
10
-2
10
tf
-3
10
-3
10
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
-4/15
16
°C
V
150
600
-4/15
15
°C
VDS
=
=
=
=
VDS
=
=
=
V
V
A
VGS
Rgon
Rgoff
VGS
ID
V
Ω
Ω
16
figure 67.
MOSFET
figure 68.
MOSFET
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of MOSFET turn on gate resistor
trr = f(ID)
trr = f(Rgon)
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
0,12
0,10
0,08
0,06
0,04
0,02
0,00
trr
trr
trr
trr
trr
trr
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
V
V
Ω
At
600
-4/15
15
V
V
A
25 °C
25 °C
-4/15
16
125 °C
150 °C
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
36
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Half-Bridge Switching Characteristics
figure 69.
MOSFET
figure 70.
MOSFET
Typical recovered charge as a function of drain current
Typical recovered charge as a function of MOSFET turn on gate resistor
Qr = f(ID)
Qr = f(Rgon)
0,45
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
V
V
Ω
At
600
-4/15
15
V
V
A
25 °C
25 °C
-4/15
16
125 °C
150 °C
125 °C
150 °C
Tj:
Tj:
Rgon
figure 71.
MOSFET
figure 72.
MOSFET
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of MOSFET turn on gate resistor
IRM = f(ID)
IRM = f(Rgon)
20,0
17,5
15,0
12,5
10,0
7,5
30
25
20
15
10
5
IRM
IRM
IRM
5,0
IRM
IRM
IRM
2,5
0,0
0
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
V
V
Ω
At
600
-4/15
15
V
25 °C
25 °C
-4/15
16
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
37
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Half-Bridge Switching Characteristics
figure 73.
MOSFET
figure 74.
MOSFET
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgon)
2250
4000
3500
3000
2500
2000
1500
1000
500
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
2000
dirr/dt ──────
1750
1500
1250
1000
750
500
250
0
0
0
5
10
15
20
25
30
ID(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
VDS
=
=
=
VDS
=
=
=
At
600
V
V
Ω
At
600
-4/15
15
V
V
A
25 °C
25 °C
VGS
VGS
ID
-4/15
16
125 °C
150 °C
125 °C
150 °C
Tj:
Tj:
Rgon
figure 75.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
45
ID MAX
40
35
30
25
20
15
10
5
0
0
250
500
750
1000
1250
1500
V
DS(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
16
16
Ω
Copyright Vincotech
38
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Switching Definitions
figure 76.
IGBT
figure 77.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 78.
IGBT
figure 79.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
39
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Switching Definitions
figure 80.
FWD
figure 81.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
40
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Switching Definitions
figure 76.
MOSFET
figure 77.
MOSFET
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 78.
MOSFET
figure 79.
MOSFET
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
ID
IC
VCE
tr
VDS
tf
Copyright Vincotech
41
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Switching Definitions
figure 80.
FWD
figure 81.
FWD
Turn-off Switching Waveforms & definition of ttrr
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Qr
IF
IF
fitted
VF
figure 82.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec = integrating time for Erec
)
%
E
rec
tErec
P
rec
t (µs)
Copyright Vincotech
42
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
B0-SL12PPA040SH-PC88L41Z
B0-SL12PPA040SH-PC88L41Z-/7/
With thermal paste (5,2 W/mK, PTM6000HV)
Name
Date code
Logo
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
Function
PhHB
DC+HB
DC-B
DC-B
DC+Bst
DC+Bst
PhBst
PhBst
DC+R
DC+R
ACIn3
ACIn2
ACIn1
G1
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
25,45
25,45
25,45
25,45
25,45
25,45
25,45
25,45
25,45
24,65
27,65
30,6
44,4
41,4
38,4
35,4
32,4
29,4
21,3
18,3
15,4
12,4
11,7
8,15
9,15
6,75
7,75
50,4
47,4
44,8
36,95
33,95
31,35
23,5
20,5
17,9
10,7
8
DC-1
S11
G11
G13
S13
DC-2
G15
S15
DC-3
G9
52,4
44,4
35,8
33,1
24,5
21,8
0
2
0
3
0
4
0
5
0
6
0
7
0
8
0
2,7
9
0
9,85
12,55
25,9
39,2
50,4
50,4
50,4
50,4
38,05
38,05
38,05
25,7
25,7
25,7
14,1
11,4
13
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
0
S9
0
S7
0
33,6
G7
0
41,4
S8
11,95
14,95
17,95
11,95
14,95
17,95
11,95
14,95
17,95
9,45
9,45
17,15
25,45
25,45
44,4
G8
S12
52,4
G12
Ph1
Ph1
G14
Ph2
Ph2
G16
Ph3
Ph3
DC+
DC+
G2
52,4
G3
52,4
S34
52,4
G4
52,4
G5
52,4
S56
52,4
G6
52,4
DC-R
DC-R
Ph-COM
T1
52,4
52,4
52,4
50,4
47,4
T2
Copyright Vincotech
43
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Pinout
DC+R
9,10
S12
15
DC+HB
2
DC+Bst
5,6
DC+
52,53
G2
16
D1
D3
D5
T2
T1
T3
T5
T12
T14
T16
T8
D11
D13
D15
D2
D32
D34
D36
G1
14
D9
S34
18
G8
42
S8
41
G12
43
G14
46
G16
49
G4
19
ACIn1
13
Ph1
T4
Ph-COM
25
PhHB
1
PhBst
7,8
C1
C2
44,45
Ph2
ACIn2
12
47,48
Ph3
ACIn3
11
50,51
D4
T11
T13
T15
G3
17
T7
T9
D12
D14
D16
S56
21
G7
40
S7
39
G9
37
S9
38
D31
D33
D35
G11
30
G13
31
G15
34
G6
22
S11
29
S13
32
S15
35
T6
Rt
D6
G5
20
DC-R
23,24
DC-B
3,4
DC-1
28
DC-2
33
DC-3
36
T1
26
T2
27
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
IGBT
1200 V
40 A
Inverter Switch
Inverter Diode
T15, T16
D11, D12, D13, D14,
FWD
1200 V
35 A
D15, D16
T9
MOSFET
FWD
1200 V
1200 V
1200 V
32 mΩ
30 A
Boost Switch
Boost Diode
D9
T7, T8
MOSFET
75 mΩ
Half-Bridge Switch
D31, D32, D33, D34,
D35, D36
Rectifier
IGBT
1600 V
1200 V
1200 V
1000 V
28 A
10 A
10 A
AC Diode
Mux Switch
Mux Diode
T1, T2, T3, T4, T5, T6
D1, D2, D3, D4, D5,
D6
FWD
C1, C2
Capacitor
Capacitor (DC)
Thermistor
Rt
Thermistor
Copyright Vincotech
44
17 Apr. 2023 / Revision 2
B0-SL12PPA040SH-PC88L41Z
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 45
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow S3 packages see vincotech.com website.
Package data
Package data for flow S3 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
Certification pending. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
B0-SL12PPA040SH-PC88L41Z-D1-14
B0-SL12PPA040SH-PC88L41Z-D2-14
4 May. 2022
17 Apr. 2023
Initial Release
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
45
17 Apr. 2023 / Revision 2
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