-SL10NIB600S701-PA29F48Z [VINCOTECH]
Low collector emitter saturation voltage;High speed and smooth switching;型号: | -SL10NIB600S701-PA29F48Z |
厂家: | VINCOTECH |
描述: | Low collector emitter saturation voltage;High speed and smooth switching |
文件: | 总37页 (文件大小:5333K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
flowNPC S3 split
950 V / 600 A
Topology features
flow S3 12 mm housing
● Kelvin Emitter for improved switching performance
● Temperature sensor
● Neutral Point Clamped Topology (I-Type)
● Split topology
Component features
● Low collector emitter saturation voltage
● High speed and smooth switching
PA29F48Z
PA39F48Z
Housing features
● Base isolation: AlN
● CTI600 housing material
● Compact, baseplate-less housing
● VINcoPress Technology
● Thermo-mechanical push-and-pull force relief
● Press-fit pin
Schematic
● Reliable cold welding connection
Target applications
● Solar Inverters
Types
● B0-SL10NIB600S701-PA29F48Z
● B0-SL10NIC600S701-PA39F48Z
PA29F48Z
PA39F48Z
Copyright Vincotech
1
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Buck Switch
VCES
Collector-emitter voltage
950
444
1200
864
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Buck Diode
VRRM
Peak repetitive reverse voltage
1200
171
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
Ptot
tp limited by Tjmax
728
A
Single Half Sine Wave,
tp = 10 ms
Tj = 25 °C
Ts = 80 °C
1040
432
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
175
Buck Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
950
77
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
200
160
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Copyright Vincotech
2
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Switch
VCES
Collector-emitter voltage
950
602
1200
750
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Boost Diode
VRRM
Peak repetitive reverse voltage
950
209
600
413
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Boost Sw. Inv. Diode
VRRM
Peak repetitive reverse voltage
950
209
600
413
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Copyright Vincotech
3
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
950
77
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
200
160
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Boost D. Protection Diode
VRRM
Peak repetitive reverse voltage
950
77
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
200
160
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Creepage distance
Clearance
Visol
DC Test Voltage*
tp = 2 s
6000
V
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
>12,7
mm
mm
9,93
11,58
8,06
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
4
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,00975 25
25
4,35
5,1
5,85
V
V
1,82
2,07
2,13
2,25(1)
VCEsat
Collector-emitter saturation voltage
15
600
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
950
0
25
12
µA
nA
Ω
20
25
300
0,5
37800
810
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 100 kHz
0
25
25
25
Reverse transfer capacitance
Gate charge
120
±15
0
1350
Thermal
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
Dynamic
0,11
K/W
Rth(j-s)
25
211,78
215,26
216,47
34,5
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
37,3
37,75
270,24
311,24
321,97
29,46
45,96
56,5
Rgon = 2 Ω
Rgoff = 4 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
355
tf
125
150
25
ns
QrFWD=0,835 µC
QrFWD=0,851 µC
QrFWD=0,855 µC
9,16
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
10,02
9,98
mWs
mWs
11,55
17,35
19,23
Eoff
125
150
Copyright Vincotech
5
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Diode
Static
25
1,72
2,17
2,32
1,8(1)
1600
VF
IR
Forward voltage
160
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
280
µA
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
Dynamic
0,22
K/W
Rth(j-s)
25
61,78
62,06
62,93
22,52
22,77
23,05
0,835
0,851
0,855
0,26
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=9122 A/µs
di/dt=6238 A/µs
di/dt=6469 A/µs
Qr
Recovered charge
±15
600
355
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
0,263
0,266
6756,77
7049,49
6408,11
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
6
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Sw. Protection Diode
Static
25
2,1
2,64
2,44
2,36
2,8(1)
VF
IR
Forward voltage
100
125
150
V
Reverse leakage current
Thermal
Vr = 950 V
25
4
µA
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
0,59
K/W
Rth(j-s)
Copyright Vincotech
7
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,00975 25
25
4,15
4,85
5,65
V
V
1,21
1,23
1,24
1,4(1)
VCEsat
Collector-emitter saturation voltage
15
600
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
950
0
25
12
µA
nA
Ω
20
25
300
0,5
73800
795
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 100 kHz
0
25
25
25
Reverse transfer capacitance
Gate charge
330
±15
0
6150
Thermal
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
Dynamic
0,13
K/W
Rth(j-s)
25
488,96
493,44
498,24
50,24
54,4
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
56
Rgon = 2 Ω
Rgoff = 2 Ω
395,52
447,68
460,8
250,52
341,62
358,11
23,23
27,36
29,06
78,24
106,17
113,82
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
600
tf
125
150
25
ns
QrFWD=10,1 µC
QrFWD=24 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
QrFWD=29,02 µC
Eoff
125
150
Copyright Vincotech
8
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
2,1
2,59
2,43
2,37
2,8(1)
VF
IR
Forward voltage
300
125
150
V
Reverse leakage current
Thermal
Vr = 950 V
25
12
µA
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
Dynamic
0,23
K/W
Rth(j-s)
25
195,57
279,82
299,08
145,91
218,84
244,17
10,1
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=10313 A/µs
di/dt=9888 A/µs
di/dt=9489 A/µs
Qr
Recovered charge
±15
600
600
125
150
25
24
μC
29,02
2,99
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
8,09
mWs
A/µs
9,95
8181
(dirf/dt)max
125
150
4351
4085
Copyright Vincotech
9
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Sw. Inv. Diode
Static
25
2,1
2,59
2,43
2,37
2,8(1)
VF
IR
Forward voltage
300
125
150
V
Reverse leakage current
Thermal
Vr = 950 V
25
12
µA
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
0,23
K/W
Rth(j-s)
Boost Sw. Protection Diode
Static
25
2,1
2,64
2,44
2,36
2,8(1)
VF
IR
Forward voltage
100
125
150
V
Reverse leakage current
Thermal
Vr = 950 V
25
4
µA
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
0,59
K/W
Rth(j-s)
Boost D. Protection Diode
Static
25
2,1
2,64
2,44
2,36
2,8(1)
VF
IR
Forward voltage
100
125
150
V
Reverse leakage current
Thermal
Vr = 950 V
25
4
µA
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
0,59
K/W
Rth(j-s)
Copyright Vincotech
10
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
11
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
1250
1250
VGE
:
7 V
8 V
9 V
1000
750
500
250
0
1000
750
500
250
0
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
250
150
μs
°C
25 °C
VGE
Tj =
V
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
200
10
-1
10
150
100
50
-2
10
-3
10
0,5
0,2
0,1
-4
0,05
0,02
0,01
0,005
0
10
-5
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
1
2
3
4
5
6
7
8
10
10
tp(s)
V
GE(V)
tp
=
=
250
24
μs
V
D =
tp / T
0,11
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,72E-02
2,61E-02
3,34E-02
2,60E-02
7,27E-03
3,12E+00
9,92E-01
1,78E-01
2,52E-02
1,28E-03
Copyright Vincotech
12
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Buck Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
10000
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
13
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Buck Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
400
300
200
100
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
6
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,22
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
3,69E-02
5,12E-02
7,45E-02
3,95E-02
1,79E-02
3,31E+00
6,84E-01
6,90E-02
1,11E-02
1,70E-03
Copyright Vincotech
14
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Buck Sw. Protection Diode Characteristics
figure 8.
FWD
figure 9.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,594
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,02E-02
7,95E-02
2,28E-01
1,50E-01
8,75E-02
2,46E+00
4,43E-01
5,90E-02
1,50E-02
1,73E-03
Copyright Vincotech
15
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Boost Switch Characteristics
figure 10.
IGBT
figure 11.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
1500
1500
VGE
:
7 V
8 V
1250
1000
750
500
250
0
1250
1000
750
500
250
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,00
0,25
0,50
0,75
1,00
1,25
1,50
1,75
2,00
0,00
0,25
0,50
0,75
1,00
1,25
1,50
1,75
2,00
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 12.
IGBT
figure 13.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
600
10
500
400
300
200
100
0
-1
10
-2
10
-3
10
0,5
0,2
0,1
-4
0,05
0,02
0,01
0,005
0
10
-5
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
1
2
3
4
5
6
7
8
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,127
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
2,24E-02
3,10E-02
4,64E-02
1,79E-02
9,01E-03
3,16E+00
7,01E-01
8,63E-02
1,89E-02
1,26E-03
Copyright Vincotech
16
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Boost Switch Characteristics
figure 14.
IGBT
Safe operating area
IC = f(VCE
)
10000
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
17
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Boost Diode Characteristics
figure 15.
FWD
figure 16.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
800
600
400
200
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,23
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
2,56E-02
4,35E-02
9,09E-02
4,34E-02
2,66E-02
2,90E+00
5,53E-01
6,81E-02
1,43E-02
1,41E-03
Copyright Vincotech
18
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Boost Sw. Inv. Diode Characteristics
figure 17.
FWD
figure 18.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
800
600
400
200
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,23
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
2,56E-02
4,35E-02
9,09E-02
4,34E-02
2,66E-02
2,90E+00
5,53E-01
6,81E-02
1,43E-02
1,41E-03
Copyright Vincotech
19
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Boost Sw. Protection Diode Characteristics
figure 19.
FWD
figure 20.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,594
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,02E-02
7,95E-02
2,28E-01
1,50E-01
8,75E-02
2,46E+00
4,43E-01
5,90E-02
1,50E-02
1,73E-03
Copyright Vincotech
20
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Boost D. Protection Diode Characteristics
figure 21.
FWD
figure 22.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,594
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,02E-02
7,95E-02
2,28E-01
1,50E-01
8,75E-02
2,46E+00
4,43E-01
5,90E-02
1,50E-02
1,73E-03
Copyright Vincotech
21
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Thermistor Characteristics
figure 23.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
22
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Buck Switching Characteristics
figure 24.
IGBT
figure 25.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
40
35
30
25
20
15
10
5
35
Eoff
Eon
Eon
Eon
30
25
20
15
10
5
Eoff
Eoff
Eoff
Eon
Eon
Eon
Eoff
Eoff
0
0
0,0
0
100
200
300
400
500
600
700
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
Ω
125 °C
150 °C
600
±15
355
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
4
figure 26.
FWD
figure 27.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
0,5
0,4
0,3
0,2
0,1
0,0
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
100
200
300
400
500
600
700
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
355
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
23
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Buck Switching Characteristics
figure 28.
IGBT
figure 29.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
1
10
td(off)
td(on)
td(off)
-1
10
0
10
td(on)
tr
tf
-2
10
-1
10
tr
tf
-3
10
-2
10
0,0
0
100
200
300
400
500
600
700
IC(A)
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
2
°C
150
600
±15
355
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
Ω
Ω
V
V
A
VGE
Rgon
Rgoff
VGE
IC
4
figure 30.
FWD
figure 31.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
trr
trr
trr
trr
trr
trr
0
100
200
300
400
500
600
700
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
355
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
24
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Buck Switching Characteristics
figure 32.
FWD
figure 33.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,2
1,0
0,8
0,6
0,4
0,2
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
100
200
300
400
500
600
700
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
125 °C
150 °C
600
±15
355
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
figure 34.
FWD
figure 35.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
80
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
100
200
300
400
500
600
700
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
355
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
25
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Buck Switching Characteristics
figure 36.
FWD
figure 37.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
15000
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
12500
10000
7500
5000
2500
0
0
100
200
300
400
500
600
700
IC(A)
0
1
2
3
4
5
6
7
8
9
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
355
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 38.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
1500
IC MAX
1250
1000
750
500
250
0
0
200
400
600
800
1000
1200
V
CE(V)
Tj =
At
150
°C
Rgon
Rgoff
=
=
2
4
Ω
Ω
Copyright Vincotech
26
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Boost Switching Characteristics
figure 39.
IGBT
figure 40.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
200
175
150
125
100
75
125
100
75
50
25
0
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
Eon
Eon
Eon
Eon
Eon
Eon
50
25
0
0
250
500
750
1000
1250
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
2
figure 41.
FWD
figure 42.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
12,5
10,0
7,5
15,0
12,5
10,0
7,5
Erec
Erec
Erec
Erec
5,0
5,0
Erec
2,5
2,5
Erec
0,0
0,0
0
250
500
750
1000
1250
IC(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
27
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Boost Switching Characteristics
figure 43.
IGBT
figure 44.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
1
10
td(on)
td(off)
td(on)
td(off)
tf
0
10
tf
-1
10
tr
tr
-1
10
-2
10
-2
10
0
250
500
750
1000
1250
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
2
°C
V
150
600
±15
600
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
2
figure 45.
FWD
figure 46.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
trr
trr
0
250
500
750
1000
1250
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
28
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Boost Switching Characteristics
figure 47.
FWD
figure 48.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
Qr
Qr
Qr
Qr
Qr
Qr
0
0
0
250
500
750
1000
1250
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 49.
FWD
figure 50.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
300
250
200
150
100
50
450
400
350
300
250
200
150
100
50
IRM
IRM
IRM
IRM
IRM
IRM
0
0
0
250
500
750
1000
1250
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
29
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Boost Switching Characteristics
figure 51.
FWD
figure 52.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
20000
30000
25000
20000
15000
10000
5000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
17500
15000
12500
10000
7500
5000
2500
0
dirr/dt ──────
0
250
500
750
1000
1250
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 53.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
1500
IC MAX
1250
1000
750
500
250
0
0
200
400
600
800
1000
1200
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
2
2
Ω
Copyright Vincotech
30
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Switching Definitions
figure 54.
IGBT
figure 55.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 56.
IGBT
figure 57.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
31
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Switching Definitions
figure 58.
FWD
figure 59.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
32
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIB600S701-PA29F48Z-/7/
With thermal paste (5,2 W/mK, PTM6000HV)
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
B0-SL10NIB600S701-PA29F48Z
Outline
Pin table [mm]
Pin
1
X
Y
49,4
49,4
5,4
5,4
5,4
5,4
2,7
2,7
2,7
0
Function
Therm1
Therm2
DC+
DC+
DC+
DC+
DC+
DC+
DC+
DC+
DC+
DC+
GND
GND
GND
GND
GND
GND
GND
GND
DC-
DC-
DC-
DC-
DC-
DC-
DC-
Ph
6,2
0
2
3
0,3
4
3
5
5,7
6
8,4
7
0,3
8
3
9
5,7
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
0,3
3
0
5,7
0
14,5
17,2
19,9
22,6
31,8
34,5
37,2
39,9
48,7
51,4
51,4
51,4
51,4
51,4
51,4
40,6
37,9
35,2
40,6
37,9
35,2
40,6
37,9
35,2
32,5
12,4
16,1
32,95
36,65
21,05
51,4
0
0
0
0
0
0
0
0
0
0
2,7
5,4
8,1
10,8
13,5
43,7
43,7
43,7
46,4
46,4
46,4
49,1
49,1
49,1
49,1
26,95
26,95
27,3
27,3
49,1
33,6
Ph
Ph
Ph
Ph
Ph
Ph
Ph
Ph
Ph
G11
S11
G13
S13
TM1
TM2
Copyright Vincotech
33
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
B0-SL10NIB600S701-PA29F48Z
Pinout
DC+
3-12
T11
D41
G11
38
S11
39
TM1
42
T13
D43
D11
D45
G13
40
GND
13-20
S13
41
Ph
28-37
D15
TM2
43
D13
Rt
Therm1
1
Therm2
2
DC-
21-27
Identification
Component
Voltage
Current
Function
Comment
ID
T11
D11
D41
T13
D13
D15
D43
D45
Rt
IGBT
FWD
950 V
1200 V
950 V
950 V
950 V
950 V
950 V
950 V
600 A
160 A
100 A
600 A
300 A
300 A
100 A
100 A
Buck Switch
Buck Diode
FWD
Buck Sw. Protection Diode
Boost Switch
IGBT
FWD
Boost Diode
FWD
Boost Sw. Inv. Diode
Boost Sw. Protection Diode
Boost D. Protection Diode
Thermistor
FWD
FWD
Thermistor
Copyright Vincotech
34
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
B0-SL10NIC600S701-PA39F48Z
B0-SL10NIC600S701-PA39F48Z-/7/
With thermal paste (5,2 W/mK, PTM6000HV)
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
B0-SL10NIC600S701-PA39F48Z
Outline
Pin table [mm]
Pin
1
X
Y
Function
Therm1
Therm2
Ph
51,45
46
49,45
49,45
49,1
49,1
49,1
49,1
49,1
46,4
46,4
46,4
46,4
46,4
25
2
3
21,8
19,1
16,4
13,7
11
4
Ph
5
Ph
6
Ph
7
Ph
8
21,8
19,1
16,4
13,7
11
Ph
9
Ph
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
Ph
Ph
Ph
0
DC+
DC+
DC+
DC+
DC+
DC+
DC+
GND
GND
GND
GND
GND
GND
GND
GND
DC-
DC-
DC-
DC-
DC-
DC-
DC-
DC-
DC-
DC-
G14
S14
G12
S12
TM3
TM4
0
22,3
19,6
16,9
14,2
11,5
8,8
0
0
0
0
0
0
0
2,6
0
5,2
0
7,8
0
39
0
41,6
44,2
46,8
51,1
48,4
51,1
51,1
51,1
51,1
48,4
51,1
51,1
51,1
28,6
32,3
46,05
49,75
7,35
32,3
0
0
0
6,45
9,15
9,15
11,85
14,55
17,25
19,95
19,95
22,65
25,35
26,95
26,95
29,35
29,35
33,6
49,1
35
Copyright Vincotech
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
B0-SL10NIC600S701-PA39F48Z
Pinout
DC+
13-19
D14
TM3
42
D16
D46
D12
Ph
3-12
GND
20-27
T14
D44
G14
38
S14
39
TM4
43
T12
D42
G12
40
Rt
S12
41
Therm1
1
Therm2
2
DC-
28-37
Identification
Component
Voltage
Current
Function
Comment
ID
T12
D12
D42
T14
D14
D16
D44
D46
Rt
IGBT
FWD
950 V
1200 V
950 V
950 V
950 V
950 V
950 V
950 V
600 A
160 A
100 A
600 A
300 A
300 A
100 A
100 A
Buck Switch
Buck Diode
FWD
Buck Sw. Protection Diode
Boost Switch
IGBT
FWD
Boost Diode
FWD
Boost Sw. Inv. Diode
Boost Sw. Protection Diode
Boost D. Protection Diode
Thermistor
FWD
FWD
Thermistor
36
Copyright Vincotech
15 Dec. 2022 / Revision 3
B0-SL10NIB600S701-PA29F48Z
B0-SL10NIC600S701-PA39F48Z
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 45
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow S3 packages see vincotech.com website.
Package data
Package data for flow S3 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
B0-SL10NIx600S701-PAx9F48Z-D3-14
15 Dec. 2022
Frame, Pin table and Pinout modification
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
37
Copyright Vincotech
15 Dec. 2022 / Revision 3
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