-SP07NIC300S5-LT92F58T [VINCOTECH]
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage;型号: | -SP07NIC300S5-LT92F58T |
厂家: | VINCOTECH |
描述: | High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage |
文件: | 总36页 (文件大小:5993K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
flowNPC S3 split
650 V / 300 A
Features
flow S3 12 mm housing
●
●
●
Split NPC topology
Optimized for 1200 Vdc applications
Split topology for improved thermal performance
● Low inductive mid-power package
LT92F58T
LT82F58T
Schematic
Target applications
● Solar Inverters
Types
● B0-SP07NIB300S5-LT82F58T
● B0-SP07NIC300S5-LT92F58T
LT92F58T
LT82F58T
Copyright Vincotech
1
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Buck Switch
VCES
Collector-emitter voltage
650
217
900
302
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Buck Diode
VRRM
Peak repetitive reverse voltage
650
230
600
301
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Buck Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
650
38
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
60
A
Ptot
64
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Switch
VCES
Collector-emitter voltage
650
217
900
302
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Boost Diode
VRRM
Peak repetitive reverse voltage
650
230
600
301
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Boost Sw. Inv. Diode
VRRM
Peak repetitive reverse voltage
650
230
600
301
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Copyright Vincotech
3
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
650
38
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
60
A
Ptot
64
W
°C
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
8,83
V
tp = 1 min
V
mm
mm
7,46
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
4
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,003
300
25
3,2
4
4,8
V
V
25
1,43
1,52
1,55
1,75(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
200
400
µA
nA
Ω
20
None
18000
520
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
68
VCC = 520 V
15
300
656
Thermal
λpaste = 4,4 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,31
K/W
25
293,76
293,44
294,08
35,2
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
38,08
39,04
224
Rgon = 8 Ω
Rgoff = 8 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
248,96
255,04
21,88
26,84
28,49
3,63
ns
±15
350
220
tf
125
150
25
ns
QrFWD=5,38 µC
QrFWD=11,16 µC
QrFWD=13,13 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
4,42
mWs
mWs
4,53
4,34
Eoff
125
150
5,69
6,19
Copyright Vincotech
5
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Diode
Static
25
1,53
1,49
1,46
1,92(1)
15,2
VF
IR
Forward voltage
300
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
µA
λpaste = 4,4 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,32
K/W
25
115,89
177,54
194,11
69,23
93,57
101,22
5,38
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=5295 A/µs
di/dt=5576 A/µs
di/dt=5507 A/µs
Qr
Recovered charge
±15
350
220
125
150
25
11,16
13,13
1,43
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
3,05
mWs
A/µs
3,64
5288
(dirf/dt)max
125
150
7000
6218
Copyright Vincotech
6
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Buck Sw. Protection Diode
Static
25
1,23
1,7
1,87(1)
0,36
VF
IR
Forward voltage
30
V
125
1,59
Reverse leakage current
Thermal
Vr = 650 V
25
µA
λpaste = 4,4 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,49
K/W
Copyright Vincotech
7
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,003
300
25
3,2
4
4,8
V
V
25
1,43
1,52
1,55
1,75(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
200
400
µA
nA
Ω
20
None
18000
520
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
68
VCC = 520 V
15
300
656
Thermal
λpaste = 4,4 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,31
K/W
25
295
295
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
295
32,6
35,8
37,1
210
tr
125
150
25
Rgon = 8 Ω
Rgoff = 8 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
228
ns
239
±15
350
220
19,5
22,1
25,5
3,69
4,29
4,34
4,12
5,37
5,77
tf
125
150
25
ns
QrFWD=4,91 µC
QrFWD=9,22 µC
QrFWD=13,8 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
8
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
1,53
1,49
1,46
1,92(1)
15,2
VF
IR
Forward voltage
300
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
µA
λpaste = 4,4 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,32
K/W
25
90,59
142,36
137,12
119
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
144
ns
147
4,91
di/dt=5670 A/µs
di/dt=5710 A/µs
di/dt=5580 A/µs
Qr
Recovered charge
±15
350
220
125
150
25
9,22
μC
13,8
0,608
1,18
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
2,07
2260
1230
1620
(dirf/dt)max
125
150
Copyright Vincotech
9
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Sw. Inv. Diode
Static
25
1,53
1,49
1,46
1,92(1)
15,2
VF
IR
Forward voltage
300
125
150
V
Reverse leakage current
Vr = 650 V
25
µA
Thermal
λpaste = 4,4 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,32
K/W
Boost Sw. Protection Diode
Static
25
1,23
1,7
1,87(1)
0,36
VF
IR
Forward voltage
30
V
125
1,59
Reverse leakage current
Thermal
Vr = 650 V
25
µA
λpaste = 4,4 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,49
K/W
Copyright Vincotech
10
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
11
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
800
800
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
600
400
200
0
600
400
200
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
300
10
250
200
150
100
50
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
1
2
3
4
5
6
7
8
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,315
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
4,24E-02
8,01E-02
1,23E-01
5,43E-02
1,49E-02
6,04E+00
9,42E-01
7,13E-02
1,58E-02
1,87E-03
Copyright Vincotech
12
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Buck Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
13
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Buck Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
800
600
400
200
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,315
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
2,42E-02
7,11E-02
1,03E-01
9,25E-02
2,42E-02
6,44E+00
1,30E+00
1,08E-01
2,52E-02
2,86E-03
Copyright Vincotech
14
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Buck Sw. Protection Diode Characteristics
figure 8.
FWD
figure 9.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,487
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
1,05E-01
2,50E-01
6,86E-01
3,22E-01
1,24E-01
1,88E+00
1,34E-01
2,59E-02
4,94E-03
5,27E-04
Copyright Vincotech
15
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Boost Switch Characteristics
figure 10.
IGBT
figure 11.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
800
800
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
600
400
200
0
600
400
200
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 12.
IGBT
figure 13.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
300
10
250
200
150
100
50
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
1
2
3
4
5
6
7
8
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,315
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
4,24E-02
8,01E-02
1,23E-01
5,43E-02
1,49E-02
6,04E+00
9,42E-01
7,13E-02
1,58E-02
1,87E-03
Copyright Vincotech
16
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Boost Switch Characteristics
figure 14.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
17
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Boost Diode Characteristics
figure 15.
FWD
figure 16.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
800
600
400
200
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,315
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
2,42E-02
7,11E-02
1,03E-01
9,25E-02
2,42E-02
6,44E+00
1,30E+00
1,08E-01
2,52E-02
2,86E-03
Copyright Vincotech
18
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Boost Sw. Inv. Diode Characteristics
figure 17.
FWD
figure 18.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
800
600
400
200
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,315
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
2,42E-02
7,11E-02
1,03E-01
9,25E-02
2,42E-02
6,44E+00
1,30E+00
1,08E-01
2,52E-02
2,86E-03
Copyright Vincotech
19
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Boost Sw. Protection Diode Characteristics
figure 19.
FWD
figure 20.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,487
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
1,05E-01
2,50E-01
6,86E-01
3,22E-01
1,24E-01
1,88E+00
1,34E-01
2,59E-02
4,94E-03
5,27E-04
Copyright Vincotech
20
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Thermistor Characteristics
figure 21.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
21
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Buck Switching Characteristics
figure 22.
IGBT
figure 23.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
12,5
10,0
7,5
17,5
15,0
12,5
10,0
7,5
Eoff
Eoff
Eon
Eon
Eon
Eoff
Eon
Eon
Eon
Eoff
Eoff
Eoff
5,0
5,0
2,5
2,5
0,0
0,0
0
50
100
150
200
250
300
350
400
450
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
Ω
125 °C
150 °C
350
±15
220
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
8
figure 24.
FWD
figure 25.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Erec
Erec
Erec
Erec
Erec
Erec
0
100
200
300
400
500
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
220
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
22
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Buck Switching Characteristics
figure 26.
IGBT
figure 27.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
1
10
td(on)
td(off)
td(on)
td(off)
0
10
-1
10
tr
tf
-1
tr
tf
10
-2
10
-2
10
0
100
200
300
400
500
0
5
10
15
20
25
30
35
Rg(Ω)
IC(A)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
±15
8
°C
V
150
350
±15
220
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 28.
FWD
figure 29.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
100
200
300
400
500
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
220
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
23
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Buck Switching Characteristics
figure 30.
FWD
figure 31.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
20,0
17,5
15,0
12,5
10,0
7,5
17,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
Qr
5,0
Qr
5,0
2,5
2,5
0,0
0,0
0
100
200
300
400
500
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
220
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 32.
FWD
figure 33.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
250
200
150
100
50
300
250
200
150
100
50
IRM
IRM
IRM
IRM
IRM
IRM
0
0
0
100
200
300
400
500
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
220
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
24
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Buck Switching Characteristics
figure 34.
FWD
figure 35.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
12500
10000
7500
5000
2500
0
0
100
200
300
400
500
IC(A)
0
5
10
15
20
25
30
35
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
220
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 36.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
700
IC MAX
600
500
400
300
200
100
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
8
°C
Ω
Rgon
Rgoff
=
=
8
Ω
Copyright Vincotech
25
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Boost Switching Characteristics
figure 37.
IGBT
figure 38.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
12,5
10,0
7,5
15,0
12,5
10,0
7,5
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eon
Eon
Eon
Eoff
Eoff
Eoff
5,0
5,0
2,5
2,5
0,0
0,0
0
50
100
150
200
250
300
350
400
450
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
Ω
125 °C
150 °C
350
±15
220
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
8
figure 39.
FWD
figure 40.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
2,5
2,0
1,5
1,0
0,5
0,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
100
200
300
400
500
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
220
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
26
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Boost Switching Characteristics
figure 41.
IGBT
figure 42.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
1
10
td(on)
td(off)
td(on)
td(off)
0
10
-1
10
tr
tf
-1
tr
tf
10
-2
10
-2
10
0
100
200
300
400
500
0
5
10
15
20
25
30
35
Rg(Ω)
IC(A)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
±15
8
°C
V
150
350
±15
220
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 43.
FWD
figure 44.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,225
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
100
200
300
400
500
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
220
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
27
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Boost Switching Characteristics
figure 45.
FWD
figure 46.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
17,5
15,0
12,5
10,0
7,5
17,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
Qr
5,0
5,0
Qr
2,5
2,5
0,0
0,0
0
100
200
300
400
500
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
220
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 47.
FWD
figure 48.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
175
150
125
100
75
200
175
150
125
100
75
IRM
IRM
IRM
IRM
IRM
IRM
50
50
25
25
0
0
0
100
200
300
400
500
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
220
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
28
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Boost Switching Characteristics
figure 49.
FWD
figure 50.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
8000
8000
7000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
7000
6000
5000
4000
3000
2000
1000
0
dirr/dt ──────
0
100
200
300
400
500
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
220
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 51.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
700
IC MAX
600
500
400
300
200
100
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
8
°C
Ω
Rgon
Rgoff
=
=
8
Ω
Copyright Vincotech
29
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Switching Definitions
figure 52.
IGBT
figure 53.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 54.
IGBT
figure 55.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
30
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Switching Definitions
figure 56.
FWD
figure 57.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
31
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Ordering Code
Marking
Version
Ordering Code
With thermal paste (4,4 W/mK, PTM6000)
B0-SP07NIB300S5-LT82F58T-/7/
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
B0-SP07NIB300S5-LT82F58T
Outline
Pin table [mm]
Pin
1
X
Y
Function
DC+
DC+
DC+
DC+
DC+
DC+
DC+
DC+
GND
GND
GND
GND
GND
GND
GND
GND
DC-
DC-
DC-
DC-
DC-
DC-
DC-
DC-
S11
G11
S13
G13
P
0
2,7
5,4
0
0
2
0
3
0
4
2,7
5
2,7
5,4
0
2,7
6
2,7
7
5,4
8
2,7
0
5,4
9
21,15
21,15
23,85
23,85
26,55
26,55
29,25
29,25
45
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
2,7
0
2,7
0
2,7
0
2,7
0
2,7
0
45
47,7
47,7
47,7
50,4
50,4
50,4
16,55
13,55
16,55
13,55
0
2,7
5,4
0
2,7
5,4
9,2
10,2
30
31
29,5
35,95
52,4
49,4
49,7
52,4
49,7
52,4
49,7
52,4
49,7
52,4
49,7
52,4
40,6
50,4
50,4
10,8
10,8
8,1
N
Therm1
Therm2
Ph
Ph
Ph
8,1
Ph
5,4
Ph
5,4
Ph
2,7
Ph
2,7
Ph
0
Ph
0
Ph
Copyright Vincotech
32
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
B0-SP07NIB300S5-LT82F58T
Pinout
DC+
1-8
T11
D41
G11
26
S11
25
P
29
T13
D43
D11
G13
28
S13
27
GND
9-16
Ph
33-42
D15
N
30
D13
Rt
DC-
17-24
Therm1
31
Therm2
32
Identification
Component
Voltage
Current
Function
Comment
ID
T11
D11
D41
T13
D13
D15
D43
Rt
IGBT
FWD
650 V
650 V
650 V
650 V
650 V
650 V
650 V
300 A
300 A
30 A
Buck Switch
Buck Diode
FWD
Buck Sw. Protection Diode
Boost Switch
IGBT
300 A
300 A
300 A
30 A
FWD
Boost Diode
FWD
Boost Sw. Inv. Diode
Boost Sw. Protection Diode
Thermistor
FWD
Thermistor
Copyright Vincotech
33
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Ordering Code
Marking
Version
Ordering Code
With thermal paste (4,4 W/mK, PTM6000)
B0-SP07NIC300S5-LT92F58T-/7/
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
B0-SP07NIC300S5-LT92F58T
Outline
Pin table [mm]
Pin
1
X
Y
Function
DC+
DC+
DC+
DC+
DC+
DC+
DC+
DC+
GND
GND
GND
GND
GND
GND
GND
GND
DC-
DC-
DC-
DC-
DC-
DC-
DC-
DC-
S12
G12
N
0
2,7
5,4
0
50,4
50,4
50,4
47,7
47,7
47,7
45
2
3
4
5
2,7
5,4
0
6
7
8
2,7
0
45
9
29,25
29,25
26,55
26,55
23,85
23,85
21,15
21,15
5,4
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
2,7
0
2,7
0
2,7
0
2,7
0
2,7
0
5,4
2,7
2,7
5,4
0
2,7
2,7
0
2,7
5,4
25,25
24,25
26,1
37,5
46,05
45,05
52,4
49,4
49,7
52,4
49,7
52,4
49,7
52,4
49,7
52,4
52,4
52,4
0
0
16,55
13,55
0
50,4
16,55
13,55
0
P
S14
G14
Therm1
Therm2
Ph
0
50,4
50,4
47,7
47,7
45
Ph
Ph
Ph
Ph
45
Ph
42,3
42,3
39,6
36,8
Ph
Ph
Ph
Ph
Copyright Vincotech
32
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
B0-SP07NIC300S5-LT92F58T
Pinout
DC+
1-8
D14
P
28
D16
Ph
GND
9-16
33-42
T14
D44
D12
G14
30
S14
29
N
27
T12
D42
G12
26
S12
25
Rt
DC-
17-24
Therm2
32
Therm1
31
Identification
Component
Voltage
Current
Function
Comment
ID
T12
D12
D42
T14
D14
D16
D44
Rt
IGBT
FWD
650 V
650 V
650 V
650 V
650 V
650 V
650 V
300 A
300 A
30 A
Buck Switch
Buck Diode
FWD
Buck Sw. Protection Diode
Boost Switch
IGBT
300 A
300 A
300 A
30 A
FWD
Boost Diode
FWD
Boost Sw. Inv. Diode
Boost Sw. Protection Diode
Thermistor
FWD
Thermistor
Copyright Vincotech
33
21 Jul. 2021 / Revision 2
B0-SP07NIB300S5-LT82F58T
B0-SP07NIC300S5-LT92F58T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 45
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow S3 packages see vincotech.com website.
Package data
Package data for flow S3 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
B0-SP07NIB300S5-LT82F58T-D1-14
B0-SP07NIB300S5-LT82F58T-D2-14
7 Oct. 2020
21 Jul. 2021
Module marking is updated with UL logo, product is
unchanged
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
34
21 Jul. 2021 / Revision 2
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