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-SP10FCA200S701-LM87F98T [VINCOTECH]

Low collector emitter saturation voltage;High speed and smooth switching;
-SP10FCA200S701-LM87F98T
型号： -SP10FCA200S701-LM87F98T
厂家： VINCOTECH    VINCOTECH
描述：

Low collector emitter saturation voltage;High speed and smooth switching
文件： 总48页 (文件大小：13383K)
中文：  中文翻译
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B0-SP10FCA200S701-LM87F98T  
datasheet  
flowFC S3  
950 V / 200 A  
Features  
flow S3 12 mm housing  
● High efficient flying capacitor topology  
● Optimized for 1500 Vdc applications  
● Low inductive package  
● Enhanced thermal performance  
Schematic  
Target applications  
● Solar Inverters  
Types  
● B0-SP10FCA200S701-LM87F98T  
Copyright Vincotech  
1
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
AC 1 Switch L  
VCES  
Collector-emitter voltage  
950  
148  
400  
283  
±20  
175  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
A
Ptot  
W
V
VGES  
Gate-emitter voltage  
Tjmax  
Maximum junction temperature  
°C  
AC 1 Diode L  
VRRM  
Peak repetitive reverse voltage  
1200  
79  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Surge (non-repetitive) forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
IFRM  
IFSM  
Ptot  
tp limited by Tjmax  
273  
390  
197  
175  
A
Single Half Sine Wave,  
tp = 10 ms  
A
Tj = Tjmax  
Ts = 80 °C  
W
°C  
Tjmax  
Maximum junction temperature  
AC 1 Switch H  
VCES  
Collector-emitter voltage  
950  
148  
400  
283  
±20  
175  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
A
Ptot  
W
V
VGES  
Gate-emitter voltage  
Tjmax  
Maximum junction temperature  
°C  
Copyright Vincotech  
2
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
AC 1 Diode H  
VRRM  
Peak repetitive reverse voltage  
1200  
79  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Surge (non-repetitive) forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
IFRM  
IFSM  
Ptot  
tp limited by Tjmax  
273  
390  
197  
175  
A
Single Half Sine Wave,  
tp = 10 ms  
A
Tj = Tjmax  
Ts = 80 °C  
W
°C  
Tjmax  
Maximum junction temperature  
AC 2 Switch L  
VCES  
Collector-emitter voltage  
950  
148  
400  
283  
±20  
175  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
A
Ptot  
W
V
VGES  
Gate-emitter voltage  
Tjmax  
Maximum junction temperature  
°C  
AC 2 Diode L  
VRRM  
Peak repetitive reverse voltage  
1200  
79  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Surge (non-repetitive) forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
IFRM  
IFSM  
Ptot  
tp limited by Tjmax  
273  
390  
197  
175  
A
Single Half Sine Wave,  
tp = 10 ms  
A
Tj = Tjmax  
Ts = 80 °C  
W
°C  
Tjmax  
Maximum junction temperature  
Copyright Vincotech  
3
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
AC 2 Switch H  
VCES  
Collector-emitter voltage  
950  
148  
400  
283  
±20  
175  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
A
Ptot  
W
V
VGES  
Gate-emitter voltage  
Tjmax  
Maximum junction temperature  
°C  
AC 2 Diode H  
VRRM  
Peak repetitive reverse voltage  
1200  
79  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Surge (non-repetitive) forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
IFRM  
IFSM  
Ptot  
tp limited by Tjmax  
273  
390  
197  
175  
A
Single Half Sine Wave,  
tp = 10 ms  
A
Tj = Tjmax  
Ts = 80 °C  
W
°C  
Tjmax  
Maximum junction temperature  
Flying Capacitor  
VMAX  
Maximum DC voltage  
1000  
V
Top  
Operation Temperature  
-55 ... 125  
°C  
Copyright Vincotech  
4
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching  
condition  
-40…+(Tjmax - 25)  
Isolation Properties  
Isolation voltage  
Isolation voltage  
Creepage distance  
Clearance  
Visol  
Visol  
DC Test Voltage*  
tp = 2 s  
6000  
2500  
V
AC Voltage  
tp = 1 min  
V
>12,7  
>12,7  
≥ 600  
mm  
mm  
Comparative Tracking Index  
*100 % tested in production  
CTI  
Copyright Vincotech  
5
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
AC 1 Switch L  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VCE = VGE  
0,00334 25  
25  
4,35  
5,1  
5,85  
V
V
1,83  
2,06  
2,11  
2,35(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
200  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
950  
0
25  
4
µA  
nA  
Ω
20  
25  
200  
0,75  
13000  
278  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 100 kHz  
0
25  
25  
25  
Reverse transfer capacitance  
Gate charge  
40  
15  
0
460  
Thermal  
λpaste = 4,4 W/mK  
(PTM)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,34  
K/W  
25  
72  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
66,24  
64,64  
18,88  
21,44  
22,4  
ns  
ns  
tr  
125  
150  
25  
Rgon = 8 Ω  
Rgoff = 8 Ω  
443,52  
494,08  
509,44  
20,58  
66,19  
80,08  
5,04  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
0/15  
600  
135  
tf  
125  
150  
25  
ns  
QrFWD=0,343 µC  
QrFWD=0,349 µC  
QrFWD=0,347 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
5,16  
mWs  
mWs  
5,17  
4,12  
Eoff  
125  
150  
6,68  
7,48  
Copyright Vincotech  
6
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
AC 1 Diode L  
Static  
25  
1,5  
1,8(1)  
600  
VF  
IR  
Forward voltage  
60  
125  
150  
1,86  
2,01  
V
Reverse leakage current  
Thermal  
Vr = 1200 V  
25  
105  
µA  
λpaste = 4,4 W/mK  
(PTM)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,48  
K/W  
25  
48,52  
46,87  
46,53  
14,75  
15,49  
15,58  
0,343  
0,349  
0,347  
0,033  
0,036  
0,035  
8531  
IRRM  
Peak recovery current  
125  
150  
25  
A
trr  
Reverse recovery time  
125  
150  
25  
ns  
di/dt=8183 A/µs  
di/dt=7191 A/µs  
di/dt=7139 A/µs  
Qr  
Recovered charge  
0/15  
600  
135  
125  
150  
25  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
mWs  
A/µs  
(dirf/dt)max  
125  
150  
8226  
7968  
Copyright Vincotech  
7
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
AC 1 Switch H  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VCE = VGE  
0,00334 25  
25  
4,35  
5,1  
5,85  
V
V
1,83  
2,06  
2,11  
2,35(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
200  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
950  
0
25  
4
µA  
nA  
Ω
20  
25  
200  
0,75  
13000  
278  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 100 kHz  
0
25  
25  
25  
Reverse transfer capacitance  
Gate charge  
40  
15  
0
460  
Thermal  
λpaste = 4,4 W/mK  
(PTM)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,34  
K/W  
25  
72  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
66,24  
64,64  
18,88  
21,44  
22,4  
ns  
ns  
tr  
125  
150  
25  
Rgon = 8 Ω  
Rgoff = 8 Ω  
443,52  
494,08  
509,44  
20,58  
66,19  
80,08  
5,04  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
0/15  
600  
135  
tf  
125  
150  
25  
ns  
QrFWD=0,343 µC  
QrFWD=0,349 µC  
QrFWD=0,347 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
5,16  
mWs  
mWs  
5,17  
4,12  
Eoff  
125  
150  
6,68  
7,48  
Copyright Vincotech  
8
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
AC 1 Diode H  
Static  
25  
1,5  
1,8(1)  
600  
VF  
IR  
Forward voltage  
60  
125  
150  
1,86  
2,01  
V
Reverse leakage current  
Thermal  
Vr = 1200 V  
25  
105  
µA  
λpaste = 4,4 W/mK  
(PTM)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,48  
K/W  
25  
48,52  
46,87  
46,53  
14,75  
15,49  
15,58  
0,343  
0,349  
0,347  
0,033  
0,036  
0,035  
8531  
IRRM  
Peak recovery current  
125  
150  
25  
A
trr  
Reverse recovery time  
125  
150  
25  
ns  
di/dt=8183 A/µs  
di/dt=7191 A/µs  
di/dt=7139 A/µs  
Qr  
Recovered charge  
0/15  
600  
135  
125  
150  
25  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
mWs  
A/µs  
(dirf/dt)max  
125  
150  
8226  
7968  
Copyright Vincotech  
9
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
AC 2 Switch L  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VCE = VGE  
0,00334 25  
25  
4,35  
5,1  
5,85  
V
V
1,83  
2,06  
2,11  
2,35(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
200  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
950  
0
25  
4
µA  
nA  
Ω
20  
25  
200  
0,75  
13000  
278  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 100 kHz  
0
25  
25  
25  
Reverse transfer capacitance  
Gate charge  
40  
15  
0
460  
Thermal  
λpaste = 4,4 W/mK  
(PTM)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,34  
K/W  
25  
72  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
66,24  
64,64  
18,88  
21,44  
22,4  
ns  
ns  
tr  
125  
150  
25  
Rgon = 8 Ω  
Rgoff = 8 Ω  
443,52  
494,08  
509,44  
20,58  
66,19  
80,08  
5,04  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
0/15  
600  
135  
tf  
125  
150  
25  
ns  
QrFWD=0,343 µC  
QrFWD=0,349 µC  
QrFWD=0,347 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
5,16  
mWs  
mWs  
5,17  
4,12  
Eoff  
125  
150  
6,68  
7,48  
Copyright Vincotech  
10  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
AC 2 Diode L  
Static  
25  
1,5  
1,8(1)  
600  
VF  
IR  
Forward voltage  
60  
125  
150  
1,86  
2,01  
V
Reverse leakage current  
Thermal  
Vr = 1200 V  
25  
105  
µA  
λpaste = 4,4 W/mK  
(PTM)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,48  
K/W  
25  
48,52  
46,87  
46,53  
14,75  
15,49  
15,58  
0,343  
0,349  
0,347  
0,033  
0,036  
0,035  
8531  
IRRM  
Peak recovery current  
125  
150  
25  
A
trr  
Reverse recovery time  
125  
150  
25  
ns  
di/dt=8183 A/µs  
di/dt=7191 A/µs  
di/dt=7139 A/µs  
Qr  
Recovered charge  
0/15  
600  
135  
125  
150  
25  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
mWs  
A/µs  
(dirf/dt)max  
125  
150  
8226  
7968  
Copyright Vincotech  
11  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
AC 2 Switch H  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VCE = VGE  
0,00334 25  
25  
4,35  
5,1  
5,85  
V
V
1,83  
2,06  
2,11  
2,35(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
200  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
950  
0
25  
4
µA  
nA  
Ω
20  
25  
200  
0,75  
13000  
278  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 100 kHz  
0
25  
25  
25  
Reverse transfer capacitance  
Gate charge  
40  
15  
0
460  
Thermal  
λpaste = 4,4 W/mK  
(PTM)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,34  
K/W  
25  
72  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
66,24  
64,64  
18,88  
21,44  
22,4  
ns  
ns  
tr  
125  
150  
25  
Rgon = 8 Ω  
Rgoff = 8 Ω  
443,52  
494,08  
509,44  
20,58  
66,19  
80,08  
5,04  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
0/15  
600  
135  
tf  
125  
150  
25  
ns  
QrFWD=0,343 µC  
QrFWD=0,349 µC  
QrFWD=0,347 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
5,16  
mWs  
mWs  
5,17  
4,12  
Eoff  
125  
150  
6,68  
7,48  
Copyright Vincotech  
12  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
AC 2 Diode H  
Static  
25  
1,5  
1,8(1)  
600  
VF  
IR  
Forward voltage  
60  
125  
150  
1,86  
2,01  
V
Reverse leakage current  
Thermal  
Vr = 1200 V  
25  
105  
µA  
λpaste = 4,4 W/mK  
(PTM)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,48  
K/W  
25  
48,52  
46,87  
46,53  
14,75  
15,49  
15,58  
0,343  
0,349  
0,347  
0,033  
0,036  
0,035  
8531  
IRRM  
Peak recovery current  
125  
150  
25  
A
trr  
Reverse recovery time  
125  
150  
25  
ns  
di/dt=8183 A/µs  
di/dt=7191 A/µs  
di/dt=7139 A/µs  
Qr  
Recovered charge  
0/15  
600  
135  
125  
150  
25  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
mWs  
A/µs  
(dirf/dt)max  
125  
150  
8226  
7968  
Copyright Vincotech  
13  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
VGE [V]  
VGS [V]  
Min  
Max  
Flying Capacitor  
Static  
DC bias voltage =  
0 V  
C
Capacitance  
25  
25  
200  
2,5  
nF  
%
%
Tolerance  
-10  
10  
Dissipation factor  
f = 1 kHz  
Thermistor  
Static  
R
ΔR/R  
P
Rated resistance  
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
25  
22  
kΩ  
%
R100 = 1484 Ω  
100  
-5  
5
5
mW  
mW/K  
K
d
25  
1,5  
B(25/50)  
Tol. ±1 %  
Tol. ±1 %  
3962  
4000  
B(25/100)  
B-value  
K
Vincotech Thermistor Reference  
I
(1)  
Value at chip level  
(2)  
Only valid with pre-applied Vincotech thermal interface material.  
Copyright Vincotech  
14  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
AC 1 Switch L Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
600  
600  
VGE  
:
7 V  
8 V  
500  
400  
300  
200  
100  
0
500  
400  
300  
200  
100  
0
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
V
CE(V)  
VCE(V)  
tp  
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
VGE  
=
Tj =  
125 °C  
150 °C  
Tj:  
VGE from 7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
0
100  
10  
-1  
75  
50  
25  
0
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
15,0  
17,5  
10  
10  
tp(s)  
V
GE(V)  
tp  
=
250  
8
μs  
D =  
tp / T  
0,336  
25 °C  
VCE  
=
V
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
6,56E-02  
1,54E-01  
9,21E-02  
1,13E-02  
1,31E-02  
1,61E+00  
1,15E-01  
2,31E-02  
2,30E-03  
3,26E-04  
Copyright Vincotech  
15  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
AC 1 Switch L Characteristics  
figure 5.  
IGBT  
Safe operating area  
IC = f(VCE  
)
1000  
100  
10  
1
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
16  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
AC 1 Diode L Characteristics  
figure 6.  
FWD  
figure 7.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
0
175  
150  
125  
100  
75  
10  
-1  
10  
-2  
10  
0,5  
0,2  
0,1  
50  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
25  
-4  
0
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0
1
2
3
4
5
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
0,482  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
3,66E-02  
5,22E-02  
1,74E-01  
1,75E-01  
4,55E-02  
3,84E+00  
8,76E-01  
8,75E-02  
1,75E-02  
2,23E-03  
Copyright Vincotech  
17  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
AC 1 Switch H Characteristics  
figure 8.  
IGBT  
figure 9.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
600  
600  
VGE  
:
7 V  
8 V  
500  
400  
300  
200  
100  
0
500  
400  
300  
200  
100  
0
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
V
CE(V)  
VCE(V)  
tp  
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
VGE  
=
Tj =  
125 °C  
150 °C  
Tj:  
VGE from 7 V to 17 V in steps of 1 V  
figure 10.  
IGBT  
figure 11.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
0
100  
10  
-1  
75  
50  
25  
0
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
15,0  
17,5  
10  
10  
tp(s)  
V
GE(V)  
tp  
=
250  
8
μs  
D =  
tp / T  
0,336  
25 °C  
VCE  
=
V
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
6,56E-02  
1,54E-01  
9,21E-02  
1,13E-02  
1,31E-02  
1,61E+00  
1,15E-01  
2,31E-02  
2,30E-03  
3,26E-04  
Copyright Vincotech  
18  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
AC 1 Switch H Characteristics  
figure 12.  
IGBT  
Safe operating area  
IC = f(VCE  
)
1000  
100  
10  
1
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
19  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
AC 1 Diode H Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
0
175  
150  
125  
100  
75  
10  
-1  
10  
-2  
10  
0,5  
0,2  
0,1  
50  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
25  
-4  
0
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0
1
2
3
4
5
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
0,482  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
3,66E-02  
5,22E-02  
1,74E-01  
1,75E-01  
4,55E-02  
3,84E+00  
8,76E-01  
8,75E-02  
1,75E-02  
2,23E-03  
Copyright Vincotech  
20  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
AC 2 Switch L Characteristics  
figure 15.  
IGBT  
figure 16.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
600  
600  
VGE  
:
7 V  
8 V  
500  
400  
300  
200  
100  
0
500  
400  
300  
200  
100  
0
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
V
CE(V)  
VCE(V)  
tp  
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
VGE  
=
Tj =  
125 °C  
150 °C  
Tj:  
VGE from 7 V to 17 V in steps of 1 V  
figure 17.  
IGBT  
figure 18.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
0
100  
10  
-1  
75  
50  
25  
0
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
15,0  
17,5  
10  
10  
tp(s)  
V
GE(V)  
tp  
=
250  
8
μs  
D =  
tp / T  
0,336  
25 °C  
VCE  
=
V
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
6,56E-02  
1,54E-01  
9,21E-02  
1,13E-02  
1,31E-02  
1,61E+00  
1,15E-01  
2,31E-02  
2,30E-03  
3,26E-04  
Copyright Vincotech  
21  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
AC 2 Switch L Characteristics  
figure 19.  
IGBT  
Safe operating area  
IC = f(VCE  
)
1000  
100  
10  
1
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
22  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
AC 2 Diode L Characteristics  
figure 20.  
FWD  
figure 21.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
0
175  
150  
125  
100  
75  
10  
-1  
10  
-2  
10  
0,5  
0,2  
0,1  
50  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
25  
-4  
0
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0
1
2
3
4
5
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
0,482  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
3,66E-02  
5,22E-02  
1,74E-01  
1,75E-01  
4,55E-02  
3,84E+00  
8,76E-01  
8,75E-02  
1,75E-02  
2,23E-03  
Copyright Vincotech  
23  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
AC 2 Switch H Characteristics  
figure 22.  
IGBT  
figure 23.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
600  
600  
VGE  
:
7 V  
8 V  
500  
400  
300  
200  
100  
0
500  
400  
300  
200  
100  
0
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
V
CE(V)  
VCE(V)  
tp  
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
VGE  
=
Tj =  
125 °C  
150 °C  
Tj:  
VGE from 7 V to 17 V in steps of 1 V  
figure 24.  
IGBT  
figure 25.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
0
100  
10  
-1  
75  
50  
25  
0
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
15,0  
17,5  
10  
10  
tp(s)  
V
GE(V)  
tp  
=
250  
8
μs  
D =  
tp / T  
0,336  
25 °C  
VCE  
=
V
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
6,56E-02  
1,54E-01  
9,21E-02  
1,13E-02  
1,31E-02  
1,61E+00  
1,15E-01  
2,31E-02  
2,30E-03  
3,26E-04  
Copyright Vincotech  
24  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
AC 2 Switch H Characteristics  
figure 26.  
IGBT  
Safe operating area  
IC = f(VCE  
)
1000  
100  
10  
1
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
25  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
AC 2 Diode H Characteristics  
figure 27.  
FWD  
figure 28.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
0
175  
150  
125  
100  
75  
10  
-1  
10  
-2  
10  
0,5  
0,2  
0,1  
50  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
25  
-4  
0
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0
1
2
3
4
5
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
0,482  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
3,66E-02  
5,22E-02  
1,74E-01  
1,75E-01  
4,55E-02  
3,84E+00  
8,76E-01  
8,75E-02  
1,75E-02  
2,23E-03  
Copyright Vincotech  
26  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
Thermistor Characteristics  
figure 29.  
Thermistor  
Typical NTC characteristic as function of temperature  
RT = f(T)  
25000  
20000  
15000  
10000  
5000  
0
20  
40  
60  
80  
100  
120  
140  
T(°C)  
Copyright Vincotech  
27  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
AC 1 Switching Characteristics L  
figure 30.  
IGBT  
figure 31.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(IC)  
E = f(Rg)  
15,0  
12,5  
10,0  
7,5  
15,0  
12,5  
10,0  
7,5  
Eon  
Eon  
Eon  
Eoff  
Eon  
Eon  
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
5,0  
5,0  
2,5  
2,5  
0,0  
0,0  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
0/15  
8
V
V
Ω
Ω
125 °C  
150 °C  
600  
0/15  
135  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
Rgoff  
8
figure 32.  
FWD  
figure 33.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
0,045  
0,040  
0,035  
0,030  
0,025  
0,020  
0,015  
0,010  
0,005  
0,000  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
0/15  
8
V
V
Ω
125 °C  
150 °C  
600  
0/15  
135  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
28  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
AC 1 Switching Characteristics L  
figure 34.  
IGBT  
figure 35.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
1
10  
td(off)  
td(off)  
0
10  
td(on)  
-1  
10  
-1  
10  
tr  
tf  
td(on)  
tf  
tr  
-2  
10  
10  
-2  
10  
-3  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
Rg(Ω)  
IC(A)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
600  
0/15  
8
°C  
V
150  
600  
0/15  
135  
°C  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
A
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
Ω
Ω
8
figure 36.  
FWD  
figure 37.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn off gate resistor  
trr = f(IC)  
trr = f(Rgoff)  
0,030  
0,025  
0,020  
0,015  
0,010  
0,005  
0,000  
0,030  
0,025  
0,020  
0,015  
0,010  
0,005  
0,000  
trr  
trr  
trr  
trr  
trr  
trr  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
0/15  
8
V
V
Ω
125 °C  
150 °C  
600  
0/15  
135  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
29  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
AC 1 Switching Characteristics L  
figure 38.  
FWD  
figure 39.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of turn off gate resistor  
Qr = f(IC)  
Qr = f(Rgoff)  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
0,45  
0,40  
0,35  
0,30  
0,25  
0,20  
0,15  
0,10  
0,05  
0,00  
Qr  
Qr  
Qr  
Qr  
Qr  
Qr  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
0/15  
8
V
V
Ω
125 °C  
150 °C  
600  
0/15  
135  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 40.  
FWD  
figure 41.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of turn off gate resistor  
IRM = f(IC)  
IRM = f(Rgoff)  
60  
50  
40  
30  
20  
10  
0
100  
80  
60  
40  
20  
0
IRM  
IRM  
IRM  
IRM  
IRM  
IRM  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
0/15  
8
V
V
Ω
125 °C  
150 °C  
600  
0/15  
135  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
30  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
AC 1 Switching Characteristics L  
figure 42.  
FWD  
figure 43.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgoff)  
12000  
25000  
20000  
15000  
10000  
5000  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
dirr/dt ──────  
10000  
8000  
6000  
4000  
2000  
0
0
50  
100  
150  
200  
250  
300  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
R
goff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
0/15  
8
V
V
Ω
125 °C  
150 °C  
600  
0/15  
135  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 44.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
450  
IC MAX  
400  
350  
300  
250  
200  
150  
100  
50  
0
0
200  
400  
600  
800  
1000  
1200  
V
CE(V)  
Tj =  
At  
150  
°C  
Ω
Rgon  
Rgoff  
=
=
8
8
Ω
Copyright Vincotech  
31  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
AC 1 Switching Characteristics H  
figure 45.  
IGBT  
figure 46.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(IC)  
E = f(Rg)  
15,0  
12,5  
10,0  
7,5  
15,0  
12,5  
10,0  
7,5  
Eon  
Eon  
Eon  
Eoff  
Eon  
Eon  
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
5,0  
5,0  
2,5  
2,5  
0,0  
0,0  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
0/15  
8
V
V
Ω
Ω
125 °C  
150 °C  
600  
0/15  
135  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
Rgoff  
8
figure 47.  
FWD  
figure 48.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
0,045  
0,040  
0,035  
0,030  
0,025  
0,020  
0,015  
0,010  
0,005  
0,000  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
0/15  
8
V
V
Ω
125 °C  
150 °C  
600  
0/15  
135  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
32  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
AC 1 Switching Characteristics H  
figure 49.  
IGBT  
figure 50.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
1
10  
td(off)  
td(off)  
0
10  
td(on)  
-1  
10  
-1  
10  
tr  
tf  
td(on)  
tf  
tr  
-2  
10  
10  
-2  
10  
-3  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
Rg(Ω)  
IC(A)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
600  
0/15  
8
°C  
V
150  
600  
0/15  
135  
°C  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
A
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
Ω
Ω
8
figure 51.  
FWD  
figure 52.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn off gate resistor  
trr = f(IC)  
trr = f(Rgoff)  
0,030  
0,025  
0,020  
0,015  
0,010  
0,005  
0,000  
0,030  
0,025  
0,020  
0,015  
0,010  
0,005  
0,000  
trr  
trr  
trr  
trr  
trr  
trr  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
0/15  
8
V
V
Ω
125 °C  
150 °C  
600  
0/15  
135  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
33  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
AC 1 Switching Characteristics H  
figure 53.  
FWD  
figure 54.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of turn off gate resistor  
Qr = f(IC)  
Qr = f(Rgoff)  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
0,45  
0,40  
0,35  
0,30  
0,25  
0,20  
0,15  
0,10  
0,05  
0,00  
Qr  
Qr  
Qr  
Qr  
Qr  
Qr  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
0/15  
8
V
V
Ω
125 °C  
150 °C  
600  
0/15  
135  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 55.  
FWD  
figure 56.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of turn off gate resistor  
IRM = f(IC)  
IRM = f(Rgoff)  
60  
50  
40  
30  
20  
10  
0
100  
80  
60  
40  
20  
0
IRM  
IRM  
IRM  
IRM  
IRM  
IRM  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
0/15  
8
V
V
Ω
125 °C  
150 °C  
600  
0/15  
135  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
34  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
AC 1 Switching Characteristics H  
figure 57.  
FWD  
figure 58.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgoff)  
12000  
25000  
20000  
15000  
10000  
5000  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
dirr/dt ──────  
10000  
8000  
6000  
4000  
2000  
0
0
50  
100  
150  
200  
250  
300  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
R
goff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
0/15  
8
V
V
Ω
125 °C  
150 °C  
600  
0/15  
135  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 59.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
450  
IC MAX  
400  
350  
300  
250  
200  
150  
100  
50  
0
0
200  
400  
600  
800  
1000  
1200  
V
CE(V)  
Tj =  
At  
150  
°C  
Ω
Rgon  
Rgoff  
=
=
8
8
Ω
Copyright Vincotech  
35  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
AC 2 Switching Characteristics L  
figure 60.  
IGBT  
figure 61.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(IC)  
E = f(Rg)  
15,0  
12,5  
10,0  
7,5  
15,0  
12,5  
10,0  
7,5  
Eon  
Eon  
Eon  
Eoff  
Eon  
Eon  
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
5,0  
5,0  
2,5  
2,5  
0,0  
0,0  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
0/15  
8
V
V
Ω
Ω
125 °C  
150 °C  
600  
0/15  
135  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
Rgoff  
8
figure 62.  
FWD  
figure 63.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
0,045  
0,040  
0,035  
0,030  
0,025  
0,020  
0,015  
0,010  
0,005  
0,000  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
0/15  
8
V
V
Ω
125 °C  
150 °C  
600  
0/15  
135  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
36  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
AC 2 Switching Characteristics L  
figure 64.  
IGBT  
figure 65.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
1
10  
td(off)  
td(off)  
0
10  
td(on)  
-1  
10  
-1  
10  
tr  
tf  
td(on)  
tf  
tr  
-2  
10  
10  
-2  
10  
-3  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
Rg(Ω)  
IC(A)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
600  
0/15  
8
°C  
V
150  
600  
0/15  
135  
°C  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
A
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
Ω
Ω
8
figure 66.  
FWD  
figure 67.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn off gate resistor  
trr = f(IC)  
trr = f(Rgoff)  
0,030  
0,025  
0,020  
0,015  
0,010  
0,005  
0,000  
0,030  
0,025  
0,020  
0,015  
0,010  
0,005  
0,000  
trr  
trr  
trr  
trr  
trr  
trr  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
0/15  
8
V
V
Ω
125 °C  
150 °C  
600  
0/15  
135  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
37  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
AC 2 Switching Characteristics L  
figure 68.  
FWD  
figure 69.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of turn off gate resistor  
Qr = f(IC)  
Qr = f(Rgoff)  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
0,45  
0,40  
0,35  
0,30  
0,25  
0,20  
0,15  
0,10  
0,05  
0,00  
Qr  
Qr  
Qr  
Qr  
Qr  
Qr  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
0/15  
8
V
V
Ω
125 °C  
150 °C  
600  
0/15  
135  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 70.  
FWD  
figure 71.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of turn off gate resistor  
IRM = f(IC)  
IRM = f(Rgoff)  
60  
50  
40  
30  
20  
10  
0
100  
80  
60  
40  
20  
0
IRM  
IRM  
IRM  
IRM  
IRM  
IRM  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
0/15  
8
V
V
Ω
125 °C  
150 °C  
600  
0/15  
135  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
38  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
AC 2 Switching Characteristics L  
figure 72.  
FWD  
figure 73.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgoff)  
12000  
25000  
20000  
15000  
10000  
5000  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
dirr/dt ──────  
10000  
8000  
6000  
4000  
2000  
0
0
50  
100  
150  
200  
250  
300  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
R
goff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
0/15  
8
V
V
Ω
125 °C  
150 °C  
600  
0/15  
135  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 74.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
450  
IC MAX  
400  
350  
300  
250  
200  
150  
100  
50  
0
0
200  
400  
600  
800  
1000  
1200  
V
CE(V)  
Tj =  
At  
150  
°C  
Ω
Rgon  
Rgoff  
=
=
8
8
Ω
Copyright Vincotech  
39  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
AC 2 Switching Characteristics H  
figure 75.  
IGBT  
figure 76.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(IC)  
E = f(Rg)  
15,0  
12,5  
10,0  
7,5  
15,0  
12,5  
10,0  
7,5  
Eon  
Eon  
Eon  
Eoff  
Eon  
Eon  
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
5,0  
5,0  
2,5  
2,5  
0,0  
0,0  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
0/15  
8
V
V
Ω
Ω
125 °C  
150 °C  
600  
0/15  
135  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
Rgoff  
8
figure 77.  
FWD  
figure 78.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
0,045  
0,040  
0,035  
0,030  
0,025  
0,020  
0,015  
0,010  
0,005  
0,000  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
0/15  
8
V
V
Ω
125 °C  
150 °C  
600  
0/15  
135  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
40  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
AC 2 Switching Characteristics H  
figure 79.  
IGBT  
figure 80.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
1
10  
td(off)  
td(off)  
0
10  
td(on)  
-1  
10  
-1  
10  
tr  
tf  
td(on)  
tf  
tr  
-2  
10  
10  
-2  
10  
-3  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
Rg(Ω)  
IC(A)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
600  
0/15  
8
°C  
V
150  
600  
0/15  
135  
°C  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
A
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
Ω
Ω
8
figure 81.  
FWD  
figure 82.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn off gate resistor  
trr = f(IC)  
trr = f(Rgoff)  
0,030  
0,025  
0,020  
0,015  
0,010  
0,005  
0,000  
0,030  
0,025  
0,020  
0,015  
0,010  
0,005  
0,000  
trr  
trr  
trr  
trr  
trr  
trr  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
0/15  
8
V
V
Ω
125 °C  
150 °C  
600  
0/15  
135  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
41  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
AC 2 Switching Characteristics H  
figure 83.  
FWD  
figure 84.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of turn off gate resistor  
Qr = f(IC)  
Qr = f(Rgoff)  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
0,45  
0,40  
0,35  
0,30  
0,25  
0,20  
0,15  
0,10  
0,05  
0,00  
Qr  
Qr  
Qr  
Qr  
Qr  
Qr  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
0/15  
8
V
V
Ω
125 °C  
150 °C  
600  
0/15  
135  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 85.  
FWD  
figure 86.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of turn off gate resistor  
IRM = f(IC)  
IRM = f(Rgoff)  
60  
50  
40  
30  
20  
10  
0
100  
80  
60  
40  
20  
0
IRM  
IRM  
IRM  
IRM  
IRM  
IRM  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
0/15  
8
V
V
Ω
125 °C  
150 °C  
600  
0/15  
135  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
42  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
AC 2 Switching Characteristics H  
figure 87.  
FWD  
figure 88.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgoff)  
12000  
25000  
20000  
15000  
10000  
5000  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
dirr/dt ──────  
10000  
8000  
6000  
4000  
2000  
0
0
50  
100  
150  
200  
250  
300  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
R
goff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
0/15  
8
V
V
Ω
125 °C  
150 °C  
600  
0/15  
135  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 89.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
450  
IC MAX  
400  
350  
300  
250  
200  
150  
100  
50  
0
0
200  
400  
600  
800  
1000  
1200  
V
CE(V)  
Tj =  
At  
150  
°C  
Ω
Rgon  
Rgoff  
=
=
8
8
Ω
Copyright Vincotech  
43  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
Switching Definitions  
figure 90.  
IGBT  
figure 91.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
IC  
VGE  
VGE  
VCE  
tEoff  
VCE  
tEon  
figure 92.  
IGBT  
figure 93.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
Copyright Vincotech  
44  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
Switching Definitions  
figure 94.  
FWD  
figure 95.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Qr  
IF  
IF  
fitted  
VF  
Copyright Vincotech  
45  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
Ordering Code  
Marking  
Version  
Ordering Code  
With thermal paste (4,4 W/mK, PTM6000)  
B0-SP10FCA200S701-LM87F98T-/7/  
Name  
Date code  
UL & VIN  
Lot  
Serial  
Text  
NN-NNNNNNNNNNNNNN-  
TTTTTTVV  
WWYY  
UL VIN  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
WWYY  
Outline  
Pin table [mm]  
Pin  
1
X
Y
0
Function  
Ph  
28,6  
25,9  
23,2  
20,5  
17,8  
15,1  
0
2
0
Ph  
3
0
Ph  
4
0
Ph  
5
0
Ph  
6
0
Ph  
7
0
Therm1  
Therm2  
DC-  
DC-  
DC-  
DC-  
DC+  
DC+  
DC+  
DC+  
G12  
S12  
G14  
S14  
S13  
G13  
S11  
G11  
FC-  
8
0
6,8  
9
0
50,4  
50,4  
50,4  
50,4  
50,4  
50,4  
50,4  
50,4  
45,6  
46,6  
21,65  
22,65  
0
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
2,7  
18,4  
21,1  
31,3  
34  
49,7  
52,4  
5,5  
8,5  
6,95  
9,95  
43,6  
46,6  
43,65  
46,65  
23,9  
25,3  
25,3  
25,3  
30,25  
28,45  
28,45  
28,45  
1
23  
24  
45,2  
34,5  
31,8  
29,1  
45,2  
21,55  
18,85  
16,15  
FC-  
FC-  
FC-  
FC+  
FC+  
FC+  
FC+  
Copyright Vincotech  
46  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
Pinout  
DC+  
13-16  
T11  
T13  
T14  
T12  
D12  
G11  
24  
S11  
23  
FC+  
29-32  
D14  
D13  
D11  
G13  
22  
S13  
21  
C30  
Ph  
01-06  
G14  
19  
S14  
20  
FC-  
25-28  
G12  
17  
S12  
18  
Rt  
DC-  
09-12  
Therm1  
07  
Therm2  
08  
Identification  
Component  
Voltage  
Current  
Function  
Comment  
ID  
T12  
D11  
T11  
D12  
T14  
D13  
T13  
D14  
C30  
Rt  
IGBT  
FWD  
950 V  
1200 V  
950 V  
200 A  
60 A  
AC 1 Switch L  
AC 1 Diode L  
AC 1 Switch H  
AC 1 Diode H  
AC 2 Switch L  
AC 2 Diode L  
AC 2 Switch H  
AC 2 Diode H  
Flying Capacitor  
Thermistor  
IGBT  
200 A  
60 A  
FWD  
1200 V  
950 V  
IGBT  
200 A  
60 A  
FWD  
1200 V  
950 V  
IGBT  
200 A  
60 A  
FWD  
1200 V  
1000 V  
Capacitor  
Thermistor  
Copyright Vincotech  
47  
07 Jul. 2021 / Revision 2  
B0-SP10FCA200S701-LM87F98T  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 45  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow S3 packages see vincotech.com website.  
Package data  
Package data for flow S3 packages see vincotech.com website.  
Vincotech thermistor reference  
See Vincotech thermistor reference table at vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
B0-SP10FCA200S701-LM87F98T-D1-14  
B0-SP10FCA200S701-LM87F98T-D2-14  
24 Sep. 2020  
7 Jul. 2021  
Initial Release  
Module marking is updated with UL logo, product is  
unchanged  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
48  
07 Jul. 2021 / Revision 2  

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