-SP10FSB600S7-LM79F98T [VINCOTECH]
Low collector emitter saturation voltage;High speed and smooth switching;
| 型号： | -SP10FSB600S7-LM79F98T |
| 厂家： | 
VINCOTECH |
| 描述： | Low collector emitter saturation voltage;High speed and smooth switching |
| 文件： | 总43页 (文件大小：6236K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
flowFC S3 split
950 V / 600 A
Features
flow S3 12 mm housing
● Low inductive mid-power package
● High efficient Flying Capacitor topology
● Optimized for 1500 V applications
● Integrated DC capacitors
LM79F98T
LM69F98T
Schematic
Target applications
● Solar Inverters
Types
● B0-SP10FSA600S7-LM69F98T
● B0-SP10FSB600S7-LM79F98T
LM79F98T
LM69F98T
Copyright Vincotech
1
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
AC 1 Switch L
VCES
Collector-emitter voltage
950
357
1200
636
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
AC 1 Diode L
VRRM
Peak repetitive reverse voltage
950
295
506
175
V
A
IF
Forward current (DC current)
Total power dissipation
Tj = Tjmax
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Ptot
W
°C
Tjmax
Maximum junction temperature
AC 1 Switch H
VCES
Collector-emitter voltage
950
357
1200
636
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
AC 1 Diode H
VRRM
Peak repetitive reverse voltage
950
295
506
175
V
A
IF
Forward current (DC current)
Total power dissipation
Tj = Tjmax
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Ptot
W
°C
Tjmax
Maximum junction temperature
Copyright Vincotech
2
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
AC 2 Switch L
VCES
Collector-emitter voltage
950
357
1200
636
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
AC 2 Diode L
VRRM
Peak repetitive reverse voltage
950
295
506
175
V
A
IF
Forward current (DC current)
Total power dissipation
Tj = Tjmax
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Ptot
W
°C
Tjmax
Maximum junction temperature
AC 2 Switch H
VCES
Collector-emitter voltage
950
357
1200
636
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
AC 2 Diode H
VRRM
Peak repetitive reverse voltage
950
295
506
175
V
A
IF
Forward current (DC current)
Total power dissipation
Tj = Tjmax
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Ptot
W
°C
Tjmax
Maximum junction temperature
3
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Flying Capacitor
VMAX
Maximum DC voltage
1000
V
Top
Operation Temperature
-55 ... 125
°C
Capacitor (DC)
VMAX
Maximum DC voltage
1500
V
Top
Operation Temperature
-55 ... 125
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Visol
Isolation voltage
DC Test Voltage*
tp = 2 s
6000
V
LM69F98T
LM79F98T
9,77
Creepage distance
Clearance
mm
9,6
LM69F98T
LM79F98T
8,72
mm
8,22
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
4
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC 1 Switch L
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,01002 25
25
4,35
5,1
5,85
V
V
1,79
2,05
2,09
2,35(1)
VCEsat
Collector-emitter saturation voltage
15
600
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
950
0
25
12
µA
nA
Ω
20
25
600
0,25
39000
834
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 100 kHz
0
25
25
25
Reverse transfer capacitance
Gate charge
120
15
0
1380
Thermal
λpaste = 4,4 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,15
K/W
25
197,76
198,72
199,36
25,92
28,16
28,48
148,16
170,88
176,64
23,26
41,21
46,35
29,9
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 2 Ω
Rgoff = 2 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
600
tf
125
150
25
ns
QrFWD=17,07 µC
QrFWD=36,66 µC
QrFWD=42 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
33,52
33,7
mWs
mWs
15,19
23,63
25,62
Eoff
125
150
5
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC 1 Diode L
Static
25
2,1
2,58
2,41
2,35
2,8(1)
VF
IR
Forward voltage
600
125
150
V
Reverse leakage current
Thermal
Vr = 950 V
25
24
µA
λpaste = 4,4 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,19
K/W
25
361,81
540,11
587,56
142,07
173,11
182,02
17,07
36,66
42
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=19055 A/µs
Qr
Recovered charge
di/dt=19448 A/µs ±15
di/dt=19304 A/µs
600
600
125
150
25
μC
4,8
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
12,05
14,24
15319
13469
14003
mWs
A/µs
(dirf/dt)max
125
150
6
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC 1 Switch H
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,01002 25
25
4,35
5,1
5,85
V
V
1,79
2,05
2,09
2,35(1)
VCEsat
Collector-emitter saturation voltage
15
600
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
950
0
25
12
µA
nA
Ω
20
25
600
0,25
39000
834
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 100 kHz
0
25
25
25
Reverse transfer capacitance
Gate charge
120
15
0
1380
Thermal
λpaste = 4,4 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,15
K/W
25
197,76
198,72
199,36
25,92
28,16
28,48
148,16
170,88
176,64
23,26
41,21
46,35
29,9
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 2 Ω
Rgoff = 2 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
600
tf
125
150
25
ns
QrFWD=17,07 µC
QrFWD=36,66 µC
QrFWD=42 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
33,52
33,7
mWs
mWs
15,19
23,63
25,62
Eoff
125
150
7
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC 1 Diode H
Static
25
2,1
2,58
2,41
2,35
2,8(1)
VF
IR
Forward voltage
600
125
150
V
Reverse leakage current
Thermal
Vr = 950 V
25
24
µA
λpaste = 4,4 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,19
K/W
25
361,81
540,11
587,56
142,07
173,11
182,02
17,07
36,66
42
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=19055 A/µs
Qr
Recovered charge
di/dt=19448 A/µs ±15
di/dt=19304 A/µs
600
600
125
150
25
μC
4,8
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
12,05
14,24
15319
13469
14003
mWs
A/µs
(dirf/dt)max
125
150
8
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC 2 Switch L
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,01002 25
25
4,35
5,1
5,85
V
V
1,79
2,05
2,09
2,35(1)
VCEsat
Collector-emitter saturation voltage
15
600
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
950
0
25
12
µA
nA
Ω
20
25
600
0,25
39000
834
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 100 kHz
0
25
25
25
Reverse transfer capacitance
Gate charge
120
15
0
1380
Thermal
λpaste = 4,4 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,15
K/W
25
199,04
200,32
200,64
24,32
26,56
27,52
151,04
175,36
181,76
22,91
42,32
49,49
29,33
33,29
34,4
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 2 Ω
Rgoff = 2 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
600
tf
125
150
25
ns
QrFWD=17,05 µC
QrFWD=38,32 µC
QrFWD=44,72 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
15,06
23,9
Eoff
125
150
26,74
9
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC 2 Diode L
Static
25
2,1
2,58
2,41
2,35
2,8(1)
VF
IR
Forward voltage
600
125
150
V
Reverse leakage current
Thermal
Vr = 950 V
25
24
µA
λpaste = 4,4 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,19
K/W
25
377,72
572,15
625,39
138,55
173,65
187,29
17,05
38,32
44,72
4,65
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=20877 A/µs
Qr
Recovered charge
di/dt=20334 A/µs ±15
di/dt=20767 A/µs
600
600
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
12,41
15,01
16716
15210
15877
mWs
A/µs
(dirf/dt)max
125
150
10
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC 2 Switch H
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,01002 25
25
4,35
5,1
5,85
V
V
1,79
2,05
2,09
2,35(1)
VCEsat
Collector-emitter saturation voltage
15
600
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
950
0
25
12
µA
nA
Ω
20
25
600
0,25
39000
834
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 100 kHz
0
25
25
25
Reverse transfer capacitance
Gate charge
120
15
0
1380
Thermal
λpaste = 4,4 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,15
K/W
25
199,04
200,32
200,64
24,32
26,56
27,52
151,04
175,36
181,76
22,91
42,32
49,49
29,33
33,29
34,4
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 2 Ω
Rgoff = 2 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
600
tf
125
150
25
ns
QrFWD=17,05 µC
QrFWD=38,32 µC
QrFWD=44,72 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
15,06
23,9
Eoff
125
150
26,74
11
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC 2 Diode H
Static
25
2,1
2,58
2,41
2,35
2,8(1)
VF
IR
Forward voltage
600
125
150
V
Reverse leakage current
Thermal
Vr = 950 V
25
24
µA
λpaste = 4,4 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,19
K/W
25
377,72
572,15
625,39
138,55
173,65
187,29
17,05
38,32
44,72
4,65
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=20877 A/µs
Qr
Recovered charge
di/dt=20334 A/µs ±15
di/dt=20767 A/µs
600
600
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
12,41
15,01
16716
15210
15877
mWs
A/µs
(dirf/dt)max
125
150
12
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Flying Capacitor
Static
DC bias voltage =
0 V
C
Capacitance
25
25
400
2,5
nF
%
%
Tolerance
-10
10
Dissipation factor
f = 1 kHz
Capacitor (DC)
Static
DC bias voltage =
0 V
C
Capacitance
25
25
112
2,5
nF
%
%
Tolerance
-10
10
Dissipation factor
f = 1 kHz
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
13
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
AC 1, AC 2 Switch L Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
1250
1250
VGE
:
7 V
8 V
9 V
1000
750
500
250
0
1000
750
500
250
0
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
250
150
μs
°C
25 °C
VGE
Tj =
V
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
-1
10
75
50
25
0
-2
10
-3
10
0,5
0,2
0,1
-4
0,05
0,02
0,01
0,005
0
10
-5
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
1
2
3
4
5
6
7
8
10
10
tp(s)
V
GE(V)
tp
=
=
250
14
μs
V
D =
tp / T
0,149
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,26E-02
4,17E-02
6,06E-02
2,86E-02
5,81E-03
8,85E+00
1,44E+00
1,19E-01
2,31E-02
1,46E-03
14
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
AC 1, AC 2 Switch L Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
10000
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
15
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
AC 1, AC 2 Diode L Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
1250
1000
750
500
250
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
4,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
0,188
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
2,89E-02
3,81E-02
8,22E-02
3,00E-02
8,47E-03
3,31E+00
5,82E-01
6,14E-02
1,08E-02
7,78E-04
Copyright Vincotech
16
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
AC 1, AC 2 Switch H Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
1250
1250
VGE
:
7 V
8 V
9 V
1000
750
500
250
0
1000
750
500
250
0
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
250
150
μs
°C
25 °C
VGE
Tj =
V
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
-1
10
75
50
25
0
-2
10
-3
10
0,5
0,2
0,1
-4
0,05
0,02
0,01
0,005
0
10
-5
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
1
2
3
4
5
6
7
8
10
10
tp(s)
V
GE(V)
tp
=
=
250
14
μs
V
D =
tp / T
0,149
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,26E-02
4,17E-02
6,06E-02
2,86E-02
5,81E-03
8,85E+00
1,44E+00
1,19E-01
2,31E-02
1,46E-03
Copyright Vincotech
17
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
AC 1, AC 2 Switch H Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
10000
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
18
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
AC 1, AC 2 Diode H Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
1250
1000
750
500
250
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
4,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
0,188
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
2,89E-02
3,81E-02
8,22E-02
3,00E-02
8,47E-03
3,31E+00
5,82E-01
6,14E-02
1,08E-02
7,78E-04
Copyright Vincotech
19
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
Thermistor Characteristics
figure 15.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
20
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
AC 1 Switching Characteristics L
figure 16.
IGBT
figure 17.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
60
50
40
30
20
10
0
100
80
60
40
20
0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
250
500
750
1000
1250
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
2
figure 18.
FWD
figure 19.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
20,0
17,5
15,0
12,5
10,0
7,5
25
20
15
10
5
Erec
Erec
Erec
Erec
Erec
5,0
2,5
Erec
0,0
0
0
250
500
750
1000
1250
IC(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
21
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
AC 1 Switching Characteristics L
figure 20.
IGBT
figure 21.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(on)
td(off)
-1
10
-1
10
tr
tf
tr
tf
-2
10
-2
10
0
250
500
750
1000
1250
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
2
°C
V
150
600
±15
600
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
2
figure 22.
FWD
figure 23.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
trr
trr
0
250
500
750
1000
1250
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
22
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
AC 1 Switching Characteristics L
figure 24.
FWD
figure 25.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
70
60
50
40
30
20
10
0
60
50
40
30
20
10
0
Qr
Qr
Qr
Qr
Qr
Qr
0
250
500
750
1000
1250
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 26.
FWD
figure 27.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
700
600
500
400
300
200
100
0
1000
800
600
400
200
0
IRM
IRM
IRM
IRM
IRM
IRM
0
250
500
750
1000
1250
IC(A)
0
1
2
3
4
5
6
7
8
9
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
23
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
AC 1 Switching Characteristics L
figure 28.
FWD
figure 29.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
30000
40000
35000
30000
25000
20000
15000
10000
5000
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
25000
20000
15000
10000
5000
0
0
0
250
500
750
1000
1250
IC(A)
0
1
2
3
4
5
6
7
8
9
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 30.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
1500
IC MAX
1250
1000
750
500
250
0
0
200
400
600
800
1000
1200
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
2
2
Ω
24
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
AC 1 Switching Characteristics H
figure 31.
IGBT
figure 32.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
60
50
40
30
20
10
0
100
80
60
40
20
0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
250
500
750
1000
1250
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
2
figure 33.
FWD
figure 34.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
20,0
17,5
15,0
12,5
10,0
7,5
25
20
15
10
5
Erec
Erec
Erec
Erec
Erec
5,0
2,5
Erec
0,0
0
0
250
500
750
1000
1250
IC(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
25
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
AC 1 Switching Characteristics H
figure 35.
IGBT
figure 36.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(on)
td(off)
-1
10
-1
10
tr
tf
tr
tf
-2
10
-2
10
0
250
500
750
1000
1250
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
2
°C
V
150
600
±15
600
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
2
figure 37.
FWD
figure 38.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
trr
trr
0
250
500
750
1000
1250
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
26
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
AC 1 Switching Characteristics H
figure 39.
FWD
figure 40.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
70
60
50
40
30
20
10
0
60
50
40
30
20
10
0
Qr
Qr
Qr
Qr
Qr
Qr
0
250
500
750
1000
1250
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 41.
FWD
figure 42.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
700
600
500
400
300
200
100
0
1000
800
600
400
200
0
IRM
IRM
IRM
IRM
IRM
IRM
0
250
500
750
1000
1250
IC(A)
0
1
2
3
4
5
6
7
8
9
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
27
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
AC 1 Switching Characteristics H
figure 43.
FWD
figure 44.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
30000
40000
35000
30000
25000
20000
15000
10000
5000
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
25000
20000
15000
10000
5000
0
0
0
250
500
750
1000
1250
IC(A)
0
1
2
3
4
5
6
7
8
9
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 45.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
1500
IC MAX
1250
1000
750
500
250
0
0
200
400
600
800
1000
1200
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
2
2
Ω
Copyright Vincotech
28
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
AC 2 Switching Characteristics L
figure 16.
IGBT
figure 17.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
60
50
40
30
20
10
0
100
80
60
40
20
0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
250
500
750
1000
1250
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
2
figure 18.
FWD
figure 19.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
22,5
20,0
17,5
15,0
12,5
10,0
7,5
25
20
15
10
5
Erec
Erec
Erec
Erec
Erec
5,0
2,5
Erec
0,0
0
0
250
500
750
1000
1250
IC(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
29
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
AC 2 Switching Characteristics L
figure 20.
IGBT
figure 21.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(on)
td(off)
-1
10
-1
10
tr
tf
tf
tr
-2
10
-2
10
0
250
500
750
1000
1250
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
2
°C
V
150
600
±15
600
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
2
figure 22.
FWD
figure 23.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
trr
trr
0
250
500
750
1000
1250
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
30
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
AC 2 Switching Characteristics L
figure 24.
FWD
figure 25.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
70
60
50
40
30
20
10
0
60
50
40
30
20
10
0
Qr
Qr
Qr
Qr
Qr
Qr
0
250
500
750
1000
1250
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 26.
FWD
figure 27.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
800
700
600
500
400
300
200
100
0
1250
1000
750
500
250
0
IRM
IRM
IRM
IRM
IRM
IRM
0
250
500
750
1000
1250
IC(A)
0
1
2
3
4
5
6
7
8
9
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
31
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
AC 2 Switching Characteristics L
figure 28.
FWD
figure 29.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
30000
45000
40000
35000
30000
25000
20000
15000
10000
5000
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
25000
20000
15000
10000
5000
0
0
0
250
500
750
1000
1250
IC(A)
0
1
2
3
4
5
6
7
8
9
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 30.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
1500
IC MAX
1250
1000
750
500
250
0
0
200
400
600
800
1000
1200
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
2
2
Ω
32
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
AC 2 Switching Characteristics H
figure 31.
IGBT
figure 32.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
60
50
40
30
20
10
0
100
80
60
40
20
0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
250
500
750
1000
1250
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
2
figure 33.
FWD
figure 34.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
22,5
20,0
17,5
15,0
12,5
10,0
7,5
25
20
15
10
5
Erec
Erec
Erec
Erec
Erec
5,0
2,5
Erec
0,0
0
0
250
500
750
1000
1250
IC(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
33
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
AC 2 Switching Characteristics H
figure 35.
IGBT
figure 36.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(on)
td(off)
-1
10
-1
10
tr
tf
tf
tr
-2
10
-2
10
0
250
500
750
1000
1250
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
2
°C
V
150
600
±15
600
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
2
figure 37.
FWD
figure 38.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
trr
trr
0
250
500
750
1000
1250
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
34
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
AC 2 Switching Characteristics H
figure 39.
FWD
figure 40.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
70
60
50
40
30
20
10
0
60
50
40
30
20
10
0
Qr
Qr
Qr
Qr
Qr
Qr
0
250
500
750
1000
1250
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 41.
FWD
figure 42.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
800
700
600
500
400
300
200
100
0
1250
1000
750
500
250
0
IRM
IRM
IRM
IRM
IRM
IRM
0
250
500
750
1000
1250
IC(A)
0
1
2
3
4
5
6
7
8
9
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
35
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
AC 2 Switching Characteristics H
figure 43.
FWD
figure 44.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
30000
45000
40000
35000
30000
25000
20000
15000
10000
5000
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
25000
20000
15000
10000
5000
0
0
0
250
500
750
1000
1250
IC(A)
0
1
2
3
4
5
6
7
8
9
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
600
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 45.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
1500
IC MAX
1250
1000
750
500
250
0
0
200
400
600
800
1000
1200
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
2
2
Ω
36
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
Switching Definitions
figure 46.
IGBT
figure 47.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
37
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
Switching Definitions
figure 50.
FWD
figure 51.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
38
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
Ordering Code
Marking
Version
Ordering Code
With thermal paste (4,4 W/mK, PTM6000)
B0-SP10FSA600S7-LM69F98T-/7/
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
B0-SP10FSA600S7-LM69F98T
Outline
Pin table [mm]
Pin
1
X
Y
Function
DC-
DC-
DC-
DC+
DC+
DC+
Therm1
Therm2
C+
0
0
14,8
17,5
20,2
30,2
32,9
35,6
50,4
50,4
28,2
28,2
28,2
28,2
22,2
22,2
22,2
22,2
50,4
50,4
50,4
32,9
30,2
20,2
17,5
0
2
3
0
4
0
5
0
6
0
7
0
8
3
9
4,8
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
7,5
C+
10,2
12,9
4,8
C+
C+
C-
7,5
C-
10,2
12,9
23,2
26,2
29,2
26,2
26,2
26,2
26,2
23,2
26,2
29,2
30,75
42,2
44,9
47,6
30,75
42,2
44,9
47,6
52,4
52,4
52,4
52,4
52,4
52,4
C-
C-
G11-a
S11
G11-b
DC+
DC+
DC-
DC-
G12-a
S12
G12-b
C+
0
0
28,2
28,2
28,2
28,2
22,2
22,2
22,2
22,2
35,6
32,9
30,2
20,2
17,5
14,8
C+
C+
C+
C-
C-
C-
C-
DC+
DC+
DC+
DC-
DC-
DC-
39
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
B0-SP10FSA600S7-LM69F98T
Pinout
DC+
4,5,6,20,21,35,36,37
T11-a
T11-b
D12
G11-a
17
G11-b
19
S11
18
C+
9,10,11,12,27,28,29,30
C10
C20
C-
13,14,15,16,31,32,33,34
T12-b
T12-a
D11
G12-a
24
G12-b
26
S12
25
Rt
1,2,3,22,23,38,39,40
DC-
Therm1
7
Therm2
8
Identification
Component
Voltage
Current
Function
Comment
ID
T12
D11
T11
Parallel devices with separate control.
Values apply to complete device.
IGBT
FWD
IGBT
950 V
950 V
950 V
600 A
600 A
600 A
600 A
AC 1 Switch L
AC 1 Diode L
AC 1 Switch H
Parallel devices with separate control.
Values apply to complete device.
D12
C20
C10
Rt
FWD
950 V
1000 V
1500 V
AC 1 Diode H
Flying Capacitor
Capacitor (DC)
Thermistor
Capacitor
Capacitor
Thermistor
40
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
Ordering Code
Marking
Version
Ordering Code
With thermal paste (4,4 W/mK, PTM6000)
B0-SP10FSB600S7-LM79F98T-/7/
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
B0-SP10FSB600S7-LM79F98T
Outline
Pin table [mm]
Pin
1
X
Y
Function
C-
0
0
16,8
19,5
22,2
28,2
30,9
33,6
50,4
50,4
26,35
26,35
26,35
26,35
50,4
50,4
50,4
31,9
29,2
21,2
18,5
0
2
C-
3
0
C-
4
0
C+
5
0
C+
6
0
C+
7
0
Therm1
Therm2
Ph
8
3
9
11,5
14,22
16,9
19,62
23,2
26,2
29,2
26,2
26,2
26,2
26,2
23,2
26,2
29,2
32,8
35,5
38,2
40,9
52,4
52,4
52,4
52,4
52,4
52,4
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
Ph
Ph
Ph
G13-a
S13
G13-b
C+
C+
C-
C-
G14-a
S14
G14-b
Ph
0
0
26,35
26,35
26,35
26,35
33,6
30,9
28,2
22,2
19,5
16,8
Ph
Ph
Ph
C+
C+
C+
C-
C-
C-
41
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
B0-SP10FSB600S7-LM79F98T
Pinout
C+
4,5,6,16,17,27,28,29
T13-a
T13-b
D14
G13-a
13
G13-b
15
S13
14
C30
Ph
9,10,11,12,23,24,25,26
T14-b
T14-a
D13
G14-a
20
G14-b
22
S14
21
Rt
Therm1
7
Therm2
8
1,2,3,18,19,30,31,32
C-
Identification
Component
Voltage
Current
Function
Comment
ID
T14
D13
T13
Parallel devices with separate control.
Values apply to complete device.
IGBT
FWD
IGBT
950 V
950 V
950 V
600 A
600 A
600 A
600 A
AC 2 Switch L
AC 2 Diode L
AC 2 Switch H
AC 2 Diode H
Parallel devices with separate control.
Values apply to complete device.
D14
C30
Rt
FWD
950 V
Capacitor
Thermistor
1000 V
Flying Capacitor
Thermistor
42
Copyright Vincotech
09 Jul. 2021 / Revision 2
B0-SP10FSA600S7-LM69F98T
B0-SP10FSB600S7-LM79F98T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 45
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow S3 packages see vincotech.com website.
Package data
Package data for flow S3 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
B0-SP10FSx600S7-LMx9F98T-D1-14
B0-SP10FSx600S7-LMx9F98T-D2-14
29 Jan. 2021
9 Jul. 2021
Module marking is updated with UL logo, product is
unchanged
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
43
Copyright Vincotech
09 Jul. 2021 / Revision 2
相关型号：
-SP10NAD600S7-LQ79F08T
Low collector emitter saturation voltage;High speed and smooth switching
VINCOTECH
-SP10NAD600S704-PE19F18T
Low collector emitter saturation voltage;High speed and smooth switching
VINCOTECH
-SP10NAE600S7-LQ89F08T
Low collector emitter saturation voltage;High speed and smooth switching
VINCOTECH
-SP10NAE600S704-PE29F18T
Low collector emitter saturation voltage;High speed and smooth switching
VINCOTECH
-SP10NDA100S7-LU18F08T
Low collector emitter saturation voltage;High speed and smooth switching
VINCOTECH
-SP10S3A100S7-LR69L08T
Low collector emitter saturation voltage;High speed and smooth switching
VINCOTECH
-SP10S3A100S710-LR69L03T
Low collector emitter saturation voltage;High speed and smooth switching
VINCOTECH
-SP126PA200M7-LR40F78T
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
-SP12CFA016ME-PD98G68T
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up
VINCOTECH
-SP12NAA008ME01-LR88F78T
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up
VINCOTECH
-SP12PMA100M7-LQ99A78T
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
©2020 ICPDF网 联系我们和版权申明