10-FZ071SA075S501-L525L58 [VINCOTECH]
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage;型号: | 10-FZ071SA075S501-L525L58 |
厂家: | VINCOTECH |
描述: | High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage |
文件: | 总22页 (文件大小:7848K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
10-FZ071SA075S501-L525L58
datasheet
flowSPFC 0
650 V / 75 A
Features
flow 0 12 mm housing
● High efficiency
● Fast IGBT
Schematic
Target applications
● UPS
Types
● 10-FZ071SA075S501-L525L58
Copyright Vincotech
1
20 Sep. 2021 / Revision 2
10-FZ071SA075S501-L525L58
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Switch
VCES
Collector-emitter voltage
650
59
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
225
86
A
Ptot
W
V
VGES
Gate-emitter voltage
±20
175
Tjmax
Maximum junction temperature
°C
Boost Diode
VRRM
Peak repetitive reverse voltage
650
59
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
150
78
A
Ptot
W
°C
Tjmax
Maximum junction temperature
175
Boost Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
650
17
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
20
A
Ptot
33
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
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20 Sep. 2021 / Revision 2
10-FZ071SA075S501-L525L58
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
75
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
490
1200
86
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
>12,7
9,15
V
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
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10-FZ071SA075S501-L525L58
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,00075 25
25
3,2
4
4,8
V
V
1,56
1,56
1,59
1,75(1)
VCEsat
Collector-emitter saturation voltage
15
75
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
50
µA
nA
Ω
20
25
100
None
4500
130
17
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
VCC = 520 V
15
75
164
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,1
K/W
25
23,6
23,8
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
23,6
10,8
tr
125
150
25
12
12,4
Rgon = 4 Ω
Rgoff = 4 Ω
126,6
145,4
149,8
22,44
30,04
36,41
0,379
0,605
0,681
0,854
1,24
td(off)
Turn-off delay time
Fall time
125
150
25
ns
0/15
350
75
tf
125
150
25
ns
QrFWD=2,49 µC
QrFWD=4,66 µC
QrFWD=5,38 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
1,36
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10-FZ071SA075S501-L525L58
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
1,53
1,49
1,46
1,92(1)
VF
IR
Forward voltage
75
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
3,8
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,22
K/W
25
92,46
115,92
122,8
52,47
83,93
94,03
2,49
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=8536 A/µs
di/dt=6881 A/µs
di/dt=6458 A/µs
Qr
Recovered charge
0/15
350
75
125
150
25
4,66
μC
5,38
0,672
1,27
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
1,46
2911
2634
2713
(dirf/dt)max
125
150
Copyright Vincotech
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10-FZ071SA075S501-L525L58
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Boost Sw. Protection Diode
Static
25
1,23
1,67
1,56
1,87(1)
0,14
VF
IR
Forward voltage
10
V
125
Reverse leakage current
Thermal
Vr = 650 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
2,87
K/W
Rectifier Diode
Static
25
0,987
0,898
0,875
1,21(1)
1,1(1)
VF
IR
Forward voltage
25
125
150
V
Reverse leakage current
Thermal
Vr = 1600 V
25
50
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,82
K/W
Copyright Vincotech
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10-FZ071SA075S501-L525L58
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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10-FZ071SA075S501-L525L58
datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
200
200
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
150
100
50
150
100
50
0
0,0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
0,5
1,0
1,5
2,0
2,5
3,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
70
10
60
50
40
30
20
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
1
2
3
4
5
6
7
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
1,104
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
2,16E-01
6,30E-01
1,62E-01
3,68E-02
6,02E-02
4,05E-01
6,87E-02
1,13E-02
2,51E-03
3,09E-04
Copyright Vincotech
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datasheet
Boost Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
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datasheet
Boost Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
200
150
100
50
10
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,215
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,70E-02
1,13E-01
4,50E-01
4,13E-01
1,42E-01
4,07E-02
4,14E+00
8,84E-01
1,20E-01
3,77E-02
7,04E-03
1,20E-03
Copyright Vincotech
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10-FZ071SA075S501-L525L58
datasheet
Boost Sw. Protection Diode Characteristics
figure 8.
FWD
figure 9.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
30
25
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,873
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
6,53E-02
1,48E-01
1,31E+00
7,32E-01
4,04E-01
2,11E-01
3,94E+00
4,48E-01
5,96E-02
1,36E-02
2,79E-03
5,37E-04
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10-FZ071SA075S501-L525L58
datasheet
Rectifier Diode Characteristics
figure 10.
Rectifier
figure 11.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
150
125
100
75
10
-1
10
-2
10
50
0,5
0,2
-3
10
0,1
0,05
0,02
0,01
0,005
0
25
-4
0
0,00
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
VF(V)
10
10
10
10
tp(s)
tp
=
250
D =
tp / T
0,818
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
Rectifier thermal model values
R (K/W)
τ (s)
3,88E-02
1,02E-01
2,75E-01
3,47E-01
4,81E-02
6,71E-03
6,63E+00
9,24E-01
1,59E-01
4,48E-02
3,54E-03
1,09E-02
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datasheet
Thermistor Characteristics
figure 12.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
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datasheet
Boost Switching Characteristics
figure 13.
IGBT
figure 14.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
2,5
2,0
1,5
1,0
0,5
0,0
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Eoff
Eoff
Eoff
Eon
Eoff
Eon
Eon
Eoff
Eoff
Eon
Eon
Eon
0
25
50
75
100
125
150
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
0/15
4
V
V
Ω
Ω
125 °C
150 °C
350
0/15
75
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
4
figure 15.
FWD
figure 16.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
2,5
2,0
1,5
1,0
0,5
0,0
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
0/15
4
V
V
Ω
125 °C
150 °C
350
0/15
75
V
125 °C
150 °C
Tj:
Tj:
V
A
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datasheet
Boost Switching Characteristics
figure 17.
IGBT
figure 18.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
-1
10
-1
10
td(on)
tf
tr
-2
10
td(on)
tf
tr
-3
10
-2
10
0
25
50
75
100
125
150
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
0/15
4
°C
V
150
350
0/15
75
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 19.
FWD
figure 20.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
0/15
4
V
V
Ω
125 °C
150 °C
350
0/15
75
V
V
A
125 °C
150 °C
Tj:
Tj:
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datasheet
Boost Switching Characteristics
figure 21.
FWD
figure 22.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
9
8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Qr
Qr
Qr
Qr
Qr
Qr
0
25
50
75
100
125
150
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
0/15
4
V
V
Ω
125 °C
150 °C
350
0/15
75
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 23.
FWD
figure 24.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
175
150
125
100
75
150
125
100
75
IRM
IRM
IRM
IRM
IRM
IRM
50
50
25
25
0
0
0,0
0
25
50
75
100
125
150
IC(A)
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
0/15
4
V
V
Ω
125 °C
150 °C
350
0/15
75
V
125 °C
150 °C
Tj:
Tj:
V
A
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datasheet
Boost Switching Characteristics
figure 25.
FWD
figure 26.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
12000
12000
10000
8000
6000
4000
2000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
10000
8000
6000
4000
2000
0
0
25
50
75
100
125
150
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
0/15
4
V
V
Ω
125 °C
150 °C
350
0/15
75
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 27.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
175
IC MAX
150
125
100
75
50
25
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
4
°C
Ω
Rgon
Rgoff
=
=
4
Ω
Copyright Vincotech
17
20 Sep. 2021 / Revision 2
10-FZ071SA075S501-L525L58
datasheet
Boost Switching Definitions
figure 28.
IGBT
figure 29.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 30.
IGBT
figure 31.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
18
20 Sep. 2021 / Revision 2
10-FZ071SA075S501-L525L58
datasheet
Boost Switching Definitions
figure 32.
FWD
figure 33.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
19
20 Sep. 2021 / Revision 2
10-FZ071SA075S501-L525L58
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-FZ071SA075S501-L525L58
10-FZ071SA075S501-L525L58-/7/
10-FZ071SA075S501-L525L58-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
0
0
Function
DC-
33,6
30,8
2
DC-
3
22
GND
4
not
assembled
12,9
5
6
7
0
0
S14
G14
10,1
not
assembled
not
8
assembled
0
9
7,1
9,9
Ph
Ph
Ph
10
11
12
0
0
12,7
not
assembled
0
13
14
22,6
C13
not
assembled
10,1
15
16
17
22,6
22,6
G13
S13
12,9
not
assembled
22
18
19
20
21
22
22,6
22,6
22,6
14,8
8,2
GND
DC+
30,8
33,6
DC+
33,6
Therm1
Therm2
33,6
Copyright Vincotech
20
20 Sep. 2021 / Revision 2
10-FZ071SA075S501-L525L58
datasheet
Pinout
DC+
19,20
D13
13
C13
D31
D32
T13
T14
D43
15
16
G13
S13
Ph
9,10,11
GND
3,18
D44
6
5
G14
S14
Rt
D14
21
22
Therm1
Therm2
DC-
1,2
Identification
Component
Voltage
Current
Function
Comment
ID
T14, T13
D13, D14
D44, D43
D11, D12
Rt
IGBT
FWD
650 V
650 V
650 V
1600 V
75 A
75 A
10 A
50 A
Boost Switch
Boost Diode
FWD
Boost Sw. Protection Diode
Rectifier Diode
Rectifier
NTC
Thermistor
Copyright Vincotech
21
20 Sep. 2021 / Revision 2
10-FZ071SA075S501-L525L58
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
New Datasheet format, module is unchanged
Correct R-tau pairs of Boost Diode
10-FZ071SA075S501-L525L58-D2-14
20 Sep. 2021
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
22
20 Sep. 2021 / Revision 2
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