10-FZ073BA030SM02-M575L38 [VINCOTECH]
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;
| 型号： | 10-FZ073BA030SM02-M575L38 |
| 厂家： | 
VINCOTECH |
| 描述： | High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge |
| 文件： | 总18页 (文件大小：1571K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FZ073BA030SM02-M575L38
datasheet
flow 3xBOOST 0
650 V / 30 A
Features
flow 0 12mm housing
● High efficient triple booster
● Included capacitor
● Very high switching frequency
● Very compact design
Schematic
Target applications
● Solar Inverter
Types
● 10-FZ073BA030SM02-M575L38
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Boost Switch
Collector-emitter voltage
650
28
VCES
I C
I CRM
Ptot
VGES
Tjmax
V
A
Collector current
Tj=Tjmax
TS=80°C
TS=80°C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj=Tjmax
90
A
57
W
V
±20
175
Maximum Junction Temperature
°C
Copyright Vincotech
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24 Jul. 2015 / Revision 2
10-FZ073BA030SM02-M575L38
datasheet
Conditions
Parameter
Symbol
Value
Unit
Boost Diode
Peak Repetitive Reverse Voltage
650
29
V
A
VRRM
I F
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj=Tjmax
T
h=80°C
IFRM
Ptot
Tjmax
180
52
A
=
=80°C
W
°C
Tj Tjmax
Th
Maximum Junction Temperature
175
Conditions
Parameter
Symbol
Value
Unit
Boost Inverse Diode
Peak Repetitive Reverse Voltage
650
30
V
A
VRRM
I F
Continuous (direct) forward current
Surge (non-repetitive) forward current
Total power dissipation
Tj=Tjmax
T
h=80°C
IFSM
Ptot
Tjmax
50Hz Single Half Sine Wave
150
58
A
=
=80°C
W
°C
Tj Tjmax
Th
Maximum Junction Temperature
175
Conditions
Value
Parameter
Symbol
Unit
DC Link Capacitor
Maximum DC voltage
1000
V
VMAX
Top
Operation Temperature
-55…+125
°C
Module Properties
Conditions
Value
Parameter
Symbol
Unit
Thermal Properties
Storage temperature
Tstg
Tjop
-40…+125
°C
°C
Operation Junction Temperature
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Visol
DC voltage
tp=2s
4000
min 12,7
9,22
V
Creepage distance
Clearance
mm
mm
Comparative Tracking Index
CTI
>200
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datasheet
Characteristic Values
Boost Switch
Parameter
Symbol
Conditions
Value
Unit
V GE [V] V CE [V] IC [A] Tj[ °C]
Min
Typ
Max
Static
25
0,0003
3,3
4
4,7
Gate-emitter threshold voltage
=
V
V
VGE VCE
V
(th)
GE
125
25
1,69
1,92
2,22
Collector-emitter saturation voltage
15
30
125
150
25
V
CEsat
40
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
0
650
0
µA
nA
Ω
I
CES
125
25
120
20
I
GES
125
none
2100
7,7
rg
Input capacitance
C
C
ies
f=1MHz
0
25
25
pF
Reverse transfer capacitance
res
Thermal
Phase-Change
Material
Thermal resistance junction to sink
1,67
K/W
R
th(j-s)
ʎ
=3,4W/mK
IGBT Switching
Turn-on delay time
Rise time
25
125
25
125
25
125
25
125
25
125
25
22
21
6
td(on)
tr
td(off)
tf
Rgoff = 16 Ω
Rgon = 16 Ω
8
ns
158
175
3
Turn-off delay time
Fall time
15/0
400
30
5
QrFWD = 0,3 μC
QrFWD = 1,1 μC
0,385
0,512
0,138
0,252
Turn-on energy (per pulse)
Turn-off energy (per pulse)
E on
E off
mWs
125
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datasheet
Boost Diode
Symbol
Parameter
Conditions
Value
Typ
Unit
V
T
r [V] IF [A] j [°C] Min
Max
Static
25
2,46
2,03
-
2,6
Forward voltage
Reverse leakage current
30
125
150
25
V
VF
10
-
665
µA
Ir
150
Thermal
Phase-Change
Material
Thermal resistance junction to sink
1,83
K/W
R th(j-s)
ʎ
=3,4W/mK
FWD Switching
25
125
25
125
25
125
25
125
25
125
28
36
17
77
0,336
1,091
0,040
0,251
6280
2364
Peak recovery current
Reverse recovery time
Recovered charge
IRRM
trr
A
ns
di/dt = 4188 A/μs
di/dt = 3749 A/μs
Qr
15/0
400
30
μC
Reverse recovered energy
Peak rate of fall of recovery current
E rec
mWs
A/µs
(di rf/dt)max
Boost Inverse Diode
Symbol
Parameter
Conditions
Value
Typ
Unit
V
T
r [V] IF [A] j [°C] Min
Max
Static
25
2,48
1,73
2,93
10
Forward voltage
Reverse leakage current
15
125
150
25
V
VF
650
µA
Ir
150
Thermal
Phase-Change
Material
Thermal resistance junction to sink
1,65
K/W
R th(j-s)
ʎ
=3,4W/mK
Copyright Vincotech
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datasheet
DC Link Capacitor
Symbol
Parameter
Conditions
Value
Typ
Unit
T
j[°C] Min
Max
Static
Capacitance per leg
Tolerance
47
nF
C
-10
+10
%
Thermistor
Conditions
GE [V] V CE [V]
Value
Typ
Parameter
Symbol
Unit
V
I C [A]
T j[ °C]
Min
Max
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
100
25
25
25
25
22
kΩ
%
R
ΔR/R
P
R100=1486 Ω
-12
+12
200
2
mW
mW/K
K
Tol. ±3%
Tol. ±3%
3950
3998
B(25/50)
B-value
K
B(25/100)
Vincotech NTC Reference
B
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datasheet
Boost Switch Characteristics
Typical output characteristics
IGBT
Typical output characteristics
IGBT
IC = f(VCE
)
IC = f(VCE)
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
=
250
125
μs
°C
VGE
=
Tj =
VGE from
7 V to 17 V in steps of 1 V
Typical transfer characteristics
IGBT
Transient Thermal Impedance as function of Pulse duration
IGBT
IC = f(VGE
)
Z th(j-s) = f(tp)
101
I
I
I
I
Z
Z
Z
Z
100
10-1
10-2
10-4
10-3
10-2
10-1
10
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
1,67
VCE
=
=
K/W
IGBT thermal model values
R th (K/W)
τ (s)
1,80E-01
3,72E-01
6,39E-01
3,20E-01
1,54E-01
1,06E+00
1,72E-01
5,52E-02
1,27E-02
3,03E-03
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datasheet
Boost Switch Characteristics
Gate voltage vs Gate charge
IGBT
VGE = f(Q G
)
V
V
V
V
At
IC
=
30
A
Boost Diode Characteristics
Typical forward characteristics
FWD
Transient thermal impedance as a function of pulse width
FWD
IF = f(VF
)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-4
=
10-3
10-2
10-1
100
101
1023
D =
R th(j-s)
tp
=
250
μs
25 °C
125 °C
150 °C
tp / T
1,83
T j:
K/W
FWD thermal model values
R (K/W)
τ
(s)
6,05E-02
1,50E-01
8,27E-01
4,06E-01
2,16E-01
1,73E-01
3,63E+00
6,48E-01
7,70E-02
1,51E-02
3,45E-03
7,36E-04
Copyright Vincotech
7
24 Jul. 2015 / Revision 2
10-FZ073BA030SM02-M575L38
datasheet
Boost Inverse Diode Characteristics
Typical forward characteristics
FWD
Transient thermal impedance as a function of pulse width
FWD
IF = f(VF
)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
R th(j-s)
tp
=
250
μs
25 °C
125 °C
150 °C
tp
/
T
T j
:
1,65
K/W
FWD thermal model values
R (K/W)
τ
(s)
5,16E-02
1,04E-01
7,15E-01
4,04E-01
2,10E-01
1,69E-01
4,05E+00
5,69E-01
7,94E-02
1,99E-02
4,66E-03
9,24E-04
Thermistor Characteristics
Typical Thermistor resistance values
Thermistor typical temperature characteristic
Typical NTC characteristic
as a function of temperature
R T = f(T)
Copyright Vincotech
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24 Jul. 2015 / Revision 2
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datasheet
Boost Switching Characteristics
Figure 1.
IGBT
Figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(rg)
E = f(IC
)
E
E
E
E
E
E
E
E
25 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
400
15/0
16
V
V
Ω
Ω
j
:
125 °C
150 °C
400
15/0
30
V
V
A
VCE
VGE
=
=
=
=
T
VCE
VGE
IC
=
=
=
T j:
R gon
R goff
16
Figure 3.
FWD
Figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(Ic)
Erec = f(rg)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
:
T j
400
15/0
16
V
V
Ω
:
400
15/0
30
V
V
A
VCE
VGE
=
=
=
T j
VCE
VGE
IC
=
=
=
R gon
Copyright Vincotech
9
24 Jul. 2015 / Revision 2
10-FZ073BA030SM02-M575L38
datasheet
Boost Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(rg)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
125
400
15/0
16
°C
V
125
400
15/0
30
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
IC
V
Ω
Ω
A
16
Figure 7.
FWD
Figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
400
400
15/0
16
V
V
Ω
25 °C
V
V
A
25 °C
125 °C
150 °C
At
VCE
=
At
VCE =
:
:
Tj
125 °C
150 °C
15/0
30
VGE
R gon
=
=
Tj
VGE
IC
=
=
Copyright Vincotech
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24 Jul. 2015 / Revision 2
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datasheet
Boost Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(IC
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
400
25 °C
400
V
V
Ω
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
IC
=
:
:
T j
15/0
16
125 °C
150 °C
15/0
30
=
T j
=
=
=
Figure 11.
FWD
Figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(IC
)
IRM = f(R gon
)
I
I
I I
I I
I
I
400
25 °C
V
V
Ω
400
15/0
30
V
V
A
25 °C
125 °C
150 °C
At
VCE
=
At
VCE =
:
:
T j
15/0
16
125 °C
150 °C
VGE
=
=
T j
VGE
IC
=
R gon
=
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datasheet
Boost Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt,di rr/dt = f(I c)
di F/dt,di rr/dt = f(R g)
diF/dt
diF
/
dt
t
t
t
t
t
t
t
t
i
i
i
i
dir r/dt
dirr
/dt
i
i
i
i
25 °C
125 °C
150 °C
400
15/0
16
V
V
Ω
400
V
V
A
At
VCE
=
At
VCE
VGE
IC
=
:
15/0
30
VGE
=
=
T j
=
R gon
=
Figure 15.
IGBT
Reverse bias safe operating area
I C = f(V CE
)
IC MAX
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
At
175
°C
Ω
Tj
=
16
16
R gon =
R goff =
Ω
Copyright Vincotech
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datasheet
Boost Switching Definitions
General conditions
=
=
=
125 °C
16 Ω
T j
Rgon
R goff
16 Ω
Figure 1.
IGBT
Figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
VCE
VGE
IC
VCE
VGE
tEoff
tEon
VGE (0%) =
0
V
VGE (0%) =
0
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
IC (100%) =
15
V
400
30
V
400
30
V
A
A
0,175
0,216
μs
μs
0,021
0,118
μs
μs
tdoff
tEoff
=
=
tdon
tEon
=
=
Figure 3.
IGBT
Figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
VCE
IC
IC
VCE
tr
tf
400
30
V
400
30
V
VC (100%) =
I C (100%) =
VC (100%) =
IC (100%) =
A
A
0,005
μs
0,008
μs
tf
=
tr =
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datasheet
Boost Switching Definitions
Figure 5.
IGBT
Figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Pon
Eoff
Poff
Eon
tEon
tEoff
Poff (100%) =
Eoff (100%) =
11,95
0,25
kW
mJ
μs
Pon (100%) =
Eon (100%) =
11,95
0,51
kW
mJ
μs
tEoff
=
0,216
tEon
=
0,118
Figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
Id
Vd
fitted
400
V
Vd (100%) =
I d (100%) =
I RRM (100%) =
30
A
-36
0,077
A
trr
=
μs
Copyright Vincotech
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datasheet
Boost Switching Definitions
Figure 8.
FWD
Figure 9.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr
)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
Id
Qrr
Erec
tErec
Prec
30
A
11,95
0,25
kW
mJ
μs
I d (100%) =
Prec (100%) =
Erec (100%) =
Q rr (100%) =
1,09
0,152
μC
μs
tQrr
=
tErec
=
0,152
Copyright Vincotech
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datasheet
Ordering Code & Marking
Version
Ordering Code
in DataMatrix as
in packaging barcode as
without thermal paste 12mm housing
10-FZ073BA030SM02-M575L38
M575L38
M575L38
Name
Date code
UL & Vinco
Lot
Serial
NN-NNNNNNNNNNNNNN
NNNNNNNN WWYY UL
Vinco LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-NNNNNNNN
WWYY
Serial
SSSS
UL Vinco
Date code
WWYY
LLLLL
SSSS
Type&Ver
Lot number
Datamatrix
TTTTTTTVV
LLLLL
Outline
Pin table [mm]
Pin
1
X
Y
Function
NTC1
NTC2
Boost3
Boost2
Boost1
DC+
33,3
30,7
23,85
15,95
9,6
0
2
0
3
0
4
0
5
0
6
2,6
0
7
0
0
DC+
8
0
22,3
22,3
22,3
22,3
22,3
22,3
22,3
22,3
22,3
DC-
9
2,6
G1
10
11
12
13
14
15
16
5,5
S1
13,1
15,9
19,4
27,7
30,7
33,3
DC-
S2
G2
S3
G3
DC-
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datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T1,T2,T3
IGBT
650V
30A
30A
15A
Boost Switch
Boost Diode
IGC10T65U8Q
D10,D20,D30
D1,D2,D3
C1,C2
FWD
FWD
650V
650V
PCFF30S65W
PCFF15S65W
Boost Inverse Diode
DC Link Capacitor
Thermistor
Capacitor
NTC
1000V
NTC
Copyright Vincotech
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datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ)
135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-FZ073BA030SM02-M575L38-D2-14
24 Jul. 2015
New topology name
1
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
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24 Jul. 2015 / Revision 2
相关型号：
10-FZ073BA030SM07-M575L308
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
10-FZ074PA030SM-L623F08
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
10-FZ074PA050RG-L624F88
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
10-FZ074PA050SM-L624F08
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
10-FZ074PA075SM-L625F08
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
10-FZ07B2A030SM02-M575L48
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
10-FZ07B2A030SM08-M575L408
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
10-FZ07BBA075S5-L684L58
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH
10-FZ07BIA030RW-P894E88
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
10-FZ07BIA030S5Y-P894E78
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH
10-FZ07BIA030SG-P894E38
High speed switching;Low EMI;Low turn-off losses;Low collector emitter saturation voltage
VINCOTECH
10-FZ07BIA030SM02-P894E58
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
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