首页 |元器件品牌

10-FZ074PA030SM-L623F08 [VINCOTECH]

High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;
10-FZ074PA030SM-L623F08
型号： 10-FZ074PA030SM-L623F08
厂家： VINCOTECH    VINCOTECH
描述：

High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
文件： 总16页 (文件大小：1491K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
10-FZ074PA030SM-L623F08  
10-PZ074PA030SM-L623F08Y  
datasheet  
650 V / 30 A  
fastPACK 0 H C  
Features  
flow 0 housing  
● High speed H-Bridge  
● High efficiency IGBT H5  
● Full current fast FWD  
● Integrated capacitors  
● Thermistor  
Schematic  
Target applications  
● Power Supply  
● Solar Inverters  
● UPS  
● Welding & Cutting  
Types  
● 10-FZ074PA030SM-L623F08  
● 10-PZ074PA030SM-L623F08Y  
Maximum Ratings  
T
j
= 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
H-Bridge Switch  
VCES  
IC  
ICRM  
Ptot  
VGES  
Tjmax  
Collector-emitter voltage  
650  
31  
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
90  
A
60  
W
V
±20  
175  
Maximum Junction Temperature  
°C  
Copyright Vincotech  
1
18 Oct 2017 / Revision 2  
10-FZ074PA030SM-L623F08  
10-PZ074PA030SM-L623F08Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
H-Bridge Diode  
VRRM  
IF  
IFRM  
Ptot  
Peak Repetitive Reverse Voltage  
650  
33  
V
A
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
60  
A
Tj = Tjmax  
50  
W
°C  
Tjmax  
Maximum Junction Temperature  
175  
Capacitor (DC)  
VMAX  
Top  
Maximum DC voltage  
630  
V
Operation Temperature  
-55…+125  
°C  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching condition  
Isolation Properties  
-40…(Tjmax - 25)  
DC Test Voltage*  
AC Voltage  
tp = 2 s  
6000  
2500  
V
Visol  
Isolation voltage  
tp = 1 min  
V
Creepage distance  
Clearance  
min. 12,7  
9,55 / 9,57  
> 200  
mm  
mm  
with solder pins / with press-fit pins  
Comparative Tracking Index  
*100 % tested in production  
CTI  
Copyright Vincotech  
2
18 Oct 2017 / Revision 2  
10-FZ074PA030SM-L623F08  
10-PZ074PA030SM-L623F08Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
H-Bridge Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VGE = VCE  
0,0003 25  
25  
3,3  
4
4,7  
V
V
1,67  
1,80  
1,84  
2,22  
Collector-emitter saturation voltage  
VCEsat  
15  
30  
125  
150  
ICES  
IGES  
Rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
40  
µA  
nA  
Ω
20  
120  
none  
2100  
7,7  
Cies  
Cres  
Qg  
f = 1MHz  
0
25  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
15  
520  
30  
70  
nC  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,57  
K/W  
Dynamic  
25  
67  
72  
68  
td(on)  
Turn-on delay time  
125  
150  
25  
8
tr  
Rise time  
125  
150  
25  
9
10  
71  
Rgoff = 16 Ω  
Rgon = 16 Ω  
ns  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
83  
88  
6
7
±15  
350  
30  
tf  
8
0,575  
0,645  
0,742  
0,117  
0,280  
0,267  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 1,1 μC  
= 1,9 μC  
= 2,3 μC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
mWs  
Eoff  
Copyright Vincotech  
3
18 Oct 2017 / Revision 2  
10-FZ074PA030SM-L623F08  
10-PZ074PA030SM-L623F08Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
H-Bridge Diode  
Static  
25  
1,52  
1,46  
1,44  
1,92  
1,6  
VF  
Ir  
Forward voltage  
30  
125  
150  
V
Reverse leakage current  
650  
25  
µA  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,92  
K/W  
Dynamic  
25  
18  
28  
31  
IRRM  
125  
150  
25  
Peak recovery current  
A
92  
trr  
Qr  
Reverse recovery time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
115  
125  
1,09  
1,94  
2,27  
0,204  
0,435  
0,485  
619  
311  
272  
ns  
di/dt = 3056 A/μs  
di/dt = 2584 A/μs  
di/dt = 2520 A/μs  
Recovered charge  
±15  
350  
30  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
Capacitor (DC)  
Capacitance  
C
150  
nF  
%
%
Tolerance  
-10  
+10  
2,5  
Dissipation factor  
f = 1 kHz  
25  
Thermistor  
Rated resistance  
R
ΔR/R  
P
25  
100  
25  
25  
25  
25  
22  
kΩ  
%
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
R100 = 1484 Ω  
-5  
5
5
mW  
mW/K  
K
1,5  
B(25/50) Tol. ±1 %  
B(25/100) Tol. ±1 %  
3962  
4000  
B-value  
K
Vincotech NTC Reference  
I
Copyright Vincotech  
4
18 Oct 2017 / Revision 2  
10-FZ074PA030SM-L623F08  
10-PZ074PA030SM-L623F08Y  
datasheet  
H-Bridge Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
I C = f(VCE  
)
I C = f(VCE)  
I
I
I
I
I
I
I
I
tp  
=
250  
15  
μs  
V
25 °C  
125 °C  
150 °C  
tp  
=
250  
150  
7 V to 17 V in steps of 1 V  
μs  
VGE  
=
Tj:  
Tj =  
°C  
VGE from  
figure 3.  
Typical transfer characteristics  
IGBT  
figure 4.  
IGBT  
Transient Thermal Impedance as function of Pulse duration  
I C = f(VGE  
)
Z th(j-s) = f(tp)  
101  
I
I
I
I
Z
Z
Z
Z
100  
10-1  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
102  
tp  
=
100  
10  
μs  
V
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
VCE  
=
Tj:  
=
1,57  
K/W  
IGBT thermal model values  
R (K/W)  
τ
(s)  
7,66E-02  
2,00E-01  
6,54E-01  
3,77E-01  
1,51E-01  
1,13E-01  
1,73E+00  
2,58E-01  
5,93E-02  
1,31E-02  
2,99E-03  
3,69E-04  
Copyright Vincotech  
5
18 Oct 2017 / Revision 2  
10-FZ074PA030SM-L623F08  
10-PZ074PA030SM-L623F08Y  
datasheet  
H-Bridge Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
101  
Z
Z
Z
Z
100  
D = 0,5  
0,2  
10-1  
0,1  
0,05  
0,02  
0,01  
0,005  
0,000  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
D =  
R th(j-s)  
tp  
=
250  
μs  
25 °C  
125 °C  
150 °C  
tp / T  
1,92  
T j:  
K/W  
FWD thermal model values  
R (K/W)  
τ
(s)  
9,41E-02  
3,44E-01  
8,56E-01  
3,61E-01  
1,37E-01  
1,27E-01  
2,25E+00  
2,12E-01  
5,84E-02  
9,83E-03  
2,89E-03  
4,79E-04  
Thermistor Characteristics  
Typical Thermistor resistance values  
figure 1.  
Typical NTC characteristic  
Thermistor  
as a function of temperature  
R = f(T)  
Copyright Vincotech  
6
18 Oct 2017 / Revision 2  
10-FZ074PA030SM-L623F08  
10-PZ074PA030SM-L623F08Y  
datasheet  
H-Bridge Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g)  
E = f(I C  
)
E
E
E
E
E
E
E
E
25 °C  
25 °C  
With an inductive load at  
With an inductive load at  
VCE  
VGE  
=
=
=
=
350  
±15  
16  
V
V
Ω
Ω
T
j
:
125 °C  
150 °C  
VCE  
VGE  
I C  
=
=
=
350  
±15  
30  
V
V
A
Tj:  
125 °C  
150 °C  
R gon  
R goff  
16  
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I c)  
Erec = f(R g)  
E
E
E
E
E
E
E
E
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
350  
±15  
16  
V
V
Ω
:
350  
±15  
30  
V
V
A
:
Tj  
VCE  
VGE  
=
=
=
Tj  
VCE  
VGE  
I C  
=
=
=
R gon  
Copyright Vincotech  
7
18 Oct 2017 / Revision 2  
10-FZ074PA030SM-L623F08  
10-PZ074PA030SM-L623F08Y  
datasheet  
H-Bridge Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C)  
t = f(R g)  
t
t
t
t
t
t
t
t
With an inductive load at  
With an inductive load at  
150  
350  
±15  
16  
°C  
V
150  
350  
±15  
30  
°C  
V
Tj =  
Tj =  
VCE  
=
=
=
=
VCE  
=
=
=
VGE  
R gon  
R goff  
V
VGE  
I C  
V
Ω
Ω
A
16  
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
t rr = f(I C  
)
trr = f(R gon  
)
t
t
t
t
t
t
t
t
At  
VCE  
=
350  
±15  
16  
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
=
350  
±15  
30  
V
V
A
25 °C  
125 °C  
150 °C  
:
Tj  
:
Tj  
VGE  
R gon  
=
=
VGE  
I C  
=
=
Copyright Vincotech  
8
18 Oct 2017 / Revision 2  
10-FZ074PA030SM-L623F08  
10-PZ074PA030SM-L623F08Y  
datasheet  
H-Bridge Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recoved charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
Q
Q
Q
Q
Q
Q
Q
Q
350  
25 °C  
350  
V
V
Ω
V
V
A
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
R gon  
=
At  
VCE  
VGE  
I C  
=
±15  
16  
:
Tj  
125 °C  
150 °C  
=
±15  
30  
:
Tj  
=
=
=
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon  
)
I
I
I I  
I I  
I
I
350  
350  
25 °C  
At  
VCE  
=
V
V
Ω
At  
VCE  
=
V
V
A
25 °C  
±15  
16  
:
Tj  
125 °C  
150 °C  
±15  
30  
:
125 °C  
150 °C  
VGE  
=
=
VGE  
I C  
=
Tj  
R gon  
=
Copyright Vincotech  
9
18 Oct 2017 / Revision 2  
10-FZ074PA030SM-L623F08  
10-PZ074PA030SM-L623F08Y  
datasheet  
H-Bridge Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt,di rr/dt = f(I c  
)
di F/dt,di rr/dt = f(R g)  
d
iF  
/
d
t
t
d
iF  
/
d
t
t
t
t
t
dir r/d  
i
i
i
i
t
t
t
t
dir r  
/dt  
i
i
i
i
At  
VCE  
=
350  
±15  
16  
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
I C  
=
350  
±15  
30  
V
V
A
25 °C  
125 °C  
150 °C  
:
Tj  
:
Tj  
VGE  
=
=
=
R gon  
=
figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(V CE  
)
IC MAX  
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
At  
175  
°C  
Ω
Tj  
=
=
=
16  
16  
R gon  
R goff  
Ω
Copyright Vincotech  
10  
18 Oct 2017 / Revision 2  
10-FZ074PA030SM-L623F08  
10-PZ074PA030SM-L623F08Y  
datasheet  
H-Bridge Switching Definitions  
General conditions  
=
=
=
125 °C  
16 Ω  
T j  
Rgon  
R goff  
16 Ω  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon  
)
tdoff  
IC  
IC  
VCE  
tEoff  
VGE  
VGE  
VCE  
tEon  
-15  
VGE (0%) =  
-15  
V
VGE (0%) =  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
350  
30  
V
350  
30  
V
A
A
0,083  
0,137  
μs  
μs  
0,072  
0,195  
μs  
μs  
t doff  
t Eoff  
=
=
tdon  
tEon  
=
=
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
350  
30  
V
350  
30  
V
VC (100%) =  
I C (100%) =  
VC (100%) =  
I C (100%) =  
A
A
0,007  
μs  
0,009  
μs  
t f  
=
tr =  
Copyright Vincotech  
11  
18 Oct 2017 / Revision 2  
10-FZ074PA030SM-L623F08  
10-PZ074PA030SM-L623F08Y  
datasheet  
H-Bridge Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Turn-off Switching Waveforms & definition of tEoff  
Turn-on Switching Waveforms & definition of tEon  
Pon  
Poff  
Eoff  
Eon  
tEoff  
tEon  
P off (100%) =  
Eoff (100%) =  
10,55  
0,28  
0,14  
kW  
mJ  
μs  
P on (100%) =  
Eon (100%) =  
10,55  
0,65  
0,20  
kW  
mJ  
μs  
t Eoff  
=
tEon =  
figure 7.  
FWD  
Turn-off Switching Waveforms & definition of trr  
IF  
fitted  
VF  
VF (100%) =  
I F (100%) =  
I RRM (100%) =  
350  
30  
V
A
-28  
0,115  
A
μs  
t rr  
=
Copyright Vincotech  
12  
18 Oct 2017 / Revision 2  
10-FZ074PA030SM-L623F08  
10-PZ074PA030SM-L623F08Y  
datasheet  
H-Bridge Switching Characteristics  
figure 8.  
FWD  
figure 9.  
FWD  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)  
Erec  
IF  
Qr  
tErec  
Prec  
30  
A
10,55  
0,43  
0,23  
kW  
mJ  
μs  
I F (100%) =  
Q r (100%) =  
P rec (100%) =  
Erec (100%) =  
1,94  
0,23  
μC  
μs  
t Qr  
=
tErec =  
Copyright Vincotech  
13  
18 Oct 2017 / Revision 2  
10-FZ074PA030SM-L623F08  
10-PZ074PA030SM-L623F08Y  
datasheet  
Ordering Code & Marking  
Version  
without thermal paste 12 mm housing with solder pins  
without thermal paste 12 mm housing with press-fit pins  
Ordering Code  
10-FZ074PA030SM-L623F08  
10-PZ074PA030SM-L623F08Y  
Name  
Date code  
WWYY  
UL & VIN  
UL VIN  
Lot  
Serial  
NN-NNNNNNNNNNNNNN  
TTTTTTVVWWYY UL  
VIN LLLLL SSSS  
Text  
NN-NNNNNNNNNNNNNN-TTTTTTVV  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
WWYY  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
Outline  
Pin table [mm]  
Pin  
1
X
Y
Function  
G11  
0
22,5  
22,5  
22,5  
22,5  
22,5  
22,5  
22,5  
22,5  
17,8  
15,3  
2
2,9  
S11  
DC-1  
DC-1  
DC+  
DC+  
S12  
3
8,3  
4
10,8  
19,6  
22,1  
29,1  
32  
5
6
7
8
G12  
9
33,5  
33,5  
Ph1  
10  
Ph1  
11  
12  
13  
33,5  
33,5  
32  
7,2  
4,7  
0
Ph2  
Ph2  
G14  
14  
15  
16  
17  
18  
19  
20  
21  
22  
29,1  
22,1  
19,6  
10,8  
8,3  
2,9  
0
0
0
S14  
DC+  
0
DC+  
0
DC-2  
DC-2  
S13  
0
0
0
G13  
0
8
Therm1  
Therm2  
0
14,5  
Copyright Vincotech  
14  
18 Oct 2017 / Revision 2  
10-FZ074PA030SM-L623F08  
10-PZ074PA030SM-L623F08Y  
datasheet  
Pinout  
Identification  
ID  
Component  
IGBT  
Voltage  
650 V  
Current  
Function  
Comment  
T11-T14  
D11-D14  
30 A  
30 A  
H-Bridge Switch  
H-Bridge Diode  
Capacitor (DC)  
Thermistor  
FWD  
650 V  
C10, C20  
Rt  
Capacitor  
NTC  
630 V  
Copyright Vincotech  
15  
18 Oct 2017 / Revision 2  
10-FZ074PA030SM-L623F08  
10-PZ074PA030SM-L623F08Y  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 135  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow 0 packages see vincotech.com website.  
Package data  
Package data for flow 0 packages see vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
10-xZ074PA030SM-L623F08x-D2-14  
18 Oct 2017  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
16  
18 Oct 2017 / Revision 2  

相关型号：

10-FZ074PA050RG-L624F88

 High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH

10-FZ074PA050SM-L624F08

 High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH

10-FZ074PA075SM-L625F08

 High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH

10-FZ07B2A030SM02-M575L48

 High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH

10-FZ07B2A030SM08-M575L408

 High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH

10-FZ07BBA075S5-L684L58

 High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH

10-FZ07BIA030RW-P894E88

 High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH

10-FZ07BIA030S5Y-P894E78

 High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH

10-FZ07BIA030SG-P894E38

 High speed switching;Low EMI;Low turn-off losses;Low collector emitter saturation voltage
VINCOTECH

10-FZ07BIA030SM02-P894E58

 High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH

10-FZ07BVA020SM-LD44E08

 High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH

10-FZ07BVA030S5-LD45E08

 High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH
©2020 ICPDF网 联系我们和版权申明