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10-FZ07B2A030SM08-M575L408 [VINCOTECH]

High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;
10-FZ07B2A030SM08-M575L408
型号： 10-FZ07B2A030SM08-M575L408
厂家： VINCOTECH    VINCOTECH
描述：

High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
文件： 总20页 (文件大小：6708K)
中文：  中文翻译
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10-FZ07B2A030SM08-M575L408  
datasheet  
flowBOOST 0 dual  
650 V / 30 A  
Topology features  
flow 0 12 mm housing  
● Dual Booster  
● Integrated DC capacitor  
● Kelvin Emitter for improved switching performance  
● Temperature sensor  
Component features  
● High efficiency in hard switching and resonant topologies  
● High speed switching  
● Low gate charge  
Housing features  
● Base isolation: Al2O3  
● Clip-in, reliable mechanical connection, qualified for wave  
soldering  
● Convex shaped substrate for superior thermal contact  
● Thermo-mechanical push-and-pull force relief  
● Solder pin  
Schematic  
Target applications  
● Charging Stations  
● Power Supply  
● Solar Inverters  
● UPS  
Types  
● 10-FZ07B2A030SM08-M575L408  
Copyright Vincotech  
1
13 Jul. 2022 / Revision 2  
10-FZ07B2A030SM08-M575L408  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Boost Switch  
VCES  
Collector-emitter voltage  
650  
32  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
90  
A
Ptot  
60  
W
V
VGES  
Gate-emitter voltage  
±20  
175  
Tjmax  
Maximum junction temperature  
°C  
Boost Diode  
VRRM  
Peak repetitive reverse voltage  
650  
24  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Surge (non-repetitive) forward current  
Surge current capability  
Tj = Tjmax  
Ts = 80 °C  
IFRM  
IFSM  
I2t  
tp limited by Tjmax  
75  
A
142  
100  
62  
A
Single Half Sine Wave,  
tp = 10 ms  
Tj = 25 °C  
Ts = 80 °C  
A2s  
W
°C  
Ptot  
Total power dissipation  
Tj = Tjmax  
Tjmax  
Maximum junction temperature  
175  
Boost Sw. Protection Diode  
VRRM  
Peak repetitive reverse voltage  
Forward current (DC current)  
Surge (non-repetitive) forward current  
Surge current capability  
1600  
38  
V
A
IF  
IFSM  
I2t  
Tj = Tjmax  
Ts = 80 °C  
Tj = 150 °C  
Ts = 80 °C  
200  
200  
46  
A
Single Half Sine Wave,  
tp = 10 ms  
A2s  
W
°C  
Ptot  
Total power dissipation  
Tj = Tjmax  
Tjmax  
Maximum junction temperature  
150  
Copyright Vincotech  
2
13 Jul. 2022 / Revision 2  
10-FZ07B2A030SM08-M575L408  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Capacitor (DC)  
VMAX  
Maximum DC voltage  
630  
V
Top  
Operation Temperature  
-55 ... 150  
°C  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching  
condition  
-40…+(Tjmax - 25)  
Isolation Properties  
Isolation voltage  
Isolation voltage  
Creepage distance  
Clearance  
Visol  
Visol  
DC Test Voltage*  
tp = 2 s  
6000  
2500  
V
AC Voltage  
tp = 1 min  
V
>12,7  
>12,7  
≥ 200  
mm  
mm  
Comparative Tracking Index  
*100 % tested in production  
CTI  
Copyright Vincotech  
3
13 Jul. 2022 / Revision 2  
10-FZ07B2A030SM08-M575L408  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Boost Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VCE = VGE  
0,0003  
30  
25  
3,3  
4
4,7  
V
V
25  
1,67  
1,8  
2,22(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
125  
150  
1,84  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
40  
µA  
nA  
Ω
20  
120  
None  
1800  
45  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 1 Mhz  
0
25  
25  
25  
Reverse transfer capacitance  
Gate charge  
7
VCC = 520 V  
15  
30  
70  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
1,57  
K/W  
25  
21,12  
20,48  
20,16  
9,28  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
tr  
125  
150  
25  
10,24  
10,56  
134,4  
151,68  
156,8  
4,96  
Rgon = 16 Ω  
Rgoff = 16 Ω  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
0/15  
400  
30  
tf  
125  
150  
25  
10,39  
12,31  
0,335  
0,34  
ns  
QrFWD=0,051 µC  
QrFWD=0,049 µC  
QrFWD=0,05 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
mWs  
mWs  
0,347  
0,148  
0,262  
0,292  
Eoff  
125  
150  
Copyright Vincotech  
4
13 Jul. 2022 / Revision 2  
10-FZ07B2A030SM08-M575L408  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Boost Diode  
Static  
25  
1,49  
1,75  
1,87  
1,8(1)  
102  
VF  
IR  
Forward voltage  
16  
125  
150  
V
Reverse leakage current  
Thermal  
Vr = 650 V  
25  
20  
µA  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
1,54  
K/W  
25  
9,5  
9,2  
IRM  
Peak recovery current  
125  
150  
25  
A
9,07  
8,4  
trr  
Reverse recovery time  
125  
150  
25  
8,68  
ns  
8,8  
0,051  
0,049  
0,05  
9,153x10-3  
8,946x10-3  
9,178x10-3  
di/dt=3122 A/µs  
di/dt=2852 A/µs  
di/dt=2764 A/µs  
Qr  
Recovered charge  
0/15  
400  
30  
125  
150  
25  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
mWs  
A/µs  
2953  
2573  
2532  
(dirf/dt)max  
125  
150  
Copyright Vincotech  
5
13 Jul. 2022 / Revision 2  
10-FZ07B2A030SM08-M575L408  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
VGE [V]  
VGS [V]  
Min  
Max  
Boost Sw. Protection Diode  
Static  
25  
1,06  
0,994  
0,973  
1,5(1)  
VF  
IR  
Forward voltage  
18  
125  
150  
25  
V
100  
Reverse leakage current  
Thermal  
Vr = 1600 V  
µA  
150  
1000  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
1,54  
K/W  
Capacitor (DC)  
Static  
DC bias voltage =  
0 V  
C
Capacitance  
25  
33  
nF  
%
Tolerance  
-5  
5
Thermistor  
Static  
R
ΔR/R  
P
Rated resistance  
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
25  
22  
kΩ  
%
R100 = 1484 Ω  
100  
25  
-5  
5
130  
1,5  
mW  
mW/K  
K
d
25  
B(25/50)  
Tol. ±1 %  
Tol. ±1 %  
3962  
4000  
B(25/100)  
B-value  
K
Vincotech Thermistor Reference  
I
(1)  
Value at chip level  
(2)  
Only valid with pre-applied Vincotech thermal interface material.  
Copyright Vincotech  
6
13 Jul. 2022 / Revision 2  
10-FZ07B2A030SM08-M575L408  
datasheet  
Boost Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
80  
80  
VGE  
:
7 V  
8 V  
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
60  
40  
20  
0
60  
40  
20  
0
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
V
CE(V)  
VCE(V)  
tp  
=
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
VGE  
Tj =  
125 °C  
150 °C  
Tj:  
VGE from 7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
1
30  
10  
25  
20  
15  
10  
5
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
0
0
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
1
2
3
4
5
6
7
8
10  
10  
tp(s)  
V
GE(V)  
tp  
VCE  
=
=
250  
10  
μs  
V
D =  
tp / T  
1,572  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
7,66E-02  
2,00E-01  
6,54E-01  
3,77E-01  
1,51E-01  
1,13E-01  
1,73E+00  
2,58E-01  
5,93E-02  
1,31E-02  
2,99E-03  
3,69E-04  
Copyright Vincotech  
7
13 Jul. 2022 / Revision 2  
10-FZ07B2A030SM08-M575L408  
datasheet  
Boost Switch Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Safe operating area  
Gate voltage vs gate charge  
IC = f(VCE  
)
VGE = f(Qg)  
100  
17,5  
15,0  
12,5  
10,0  
7,5  
10  
1
5,0  
0,1  
0,01  
2,5  
0,0  
1
10  
100  
1000  
10000  
0
10  
20  
30  
40  
50  
60  
70  
80  
V
CE(V)  
Qg(μC)  
D =  
IC  
=
single pulse  
30  
25  
A
Ts =  
Tj =  
80  
15  
°C  
V
°C  
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
8
13 Jul. 2022 / Revision 2  
10-FZ07B2A030SM08-M575L408  
datasheet  
Boost Diode Characteristics  
figure 7.  
FWD  
figure 8.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
1
40  
30  
20  
10  
0
10  
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0
1
2
3
4
5
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
1,543  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
8,00E-02  
2,86E-01  
7,15E-01  
3,66E-01  
9,56E-02  
2,02E+00  
2,25E-01  
4,66E-02  
5,33E-03  
8,10E-04  
Copyright Vincotech  
9
13 Jul. 2022 / Revision 2  
10-FZ07B2A030SM08-M575L408  
datasheet  
Boost Sw. Protection Diode Characteristics  
figure 9.  
Rectifier  
figure 10.  
Rectifier  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
1
50  
40  
30  
20  
10  
0
10  
0
10  
-1  
10  
0,5  
0,2  
-2  
10  
0,1  
0,05  
0,02  
0,01  
0,005  
0
-3  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,00  
0,25  
0,50  
0,75  
1,00  
1,25  
1,50  
10  
10  
10  
10  
VF(V)  
tp(s)  
tp  
=
250  
μs  
D =  
tp / T  
1,537  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
Rectifier thermal model values  
R (K/W)  
τ (s)  
7,03E-02  
2,01E-01  
7,63E-01  
3,40E-01  
1,63E-01  
4,42E+00  
4,56E-01  
7,09E-02  
1,14E-02  
1,31E-03  
Copyright Vincotech  
10  
13 Jul. 2022 / Revision 2  
10-FZ07B2A030SM08-M575L408  
datasheet  
Thermistor Characteristics  
figure 11.  
Thermistor  
Typical NTC characteristic as function of temperature  
RT = f(T)  
25000  
20000  
15000  
10000  
5000  
0
20  
40  
60  
80  
100  
120  
140  
T(°C)  
Copyright Vincotech  
11  
13 Jul. 2022 / Revision 2  
10-FZ07B2A030SM08-M575L408  
datasheet  
Boost Switching Characteristics  
figure 12.  
IGBT  
figure 13.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of IGBT turn on gate resistor  
E = f(IC)  
E = f(Rg)  
1,0  
0,8  
0,6  
0,4  
0,2  
0,0  
1,0  
0,8  
0,6  
0,4  
0,2  
0,0  
Eon  
Eon  
Eon  
Eon  
Eon  
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
0
10  
20  
30  
40  
50  
60  
IC(A)  
0
10  
20  
30  
40  
50  
60  
70  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
400  
0/15  
16  
V
V
Ω
Ω
125 °C  
150 °C  
400  
0/15  
30  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Rgon  
Rgoff  
16  
figure 14.  
FWD  
figure 15.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
0,0200  
0,0175  
0,0150  
0,0125  
0,0100  
0,0075  
0,0050  
0,0025  
0,0000  
0,0175  
0,0150  
0,0125  
0,0100  
0,0075  
0,0050  
0,0025  
0,0000  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
10  
20  
30  
40  
50  
60  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
400  
0/15  
16  
V
V
Ω
125 °C  
150 °C  
400  
0/15  
30  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
12  
13 Jul. 2022 / Revision 2  
10-FZ07B2A030SM08-M575L408  
datasheet  
Boost Switching Characteristics  
figure 16.  
IGBT  
figure 17.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of IGBT turn on gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
0
10  
td(off)  
td(off)  
-1  
10  
-1  
10  
td(on)  
tr  
td(on)  
tr  
tf  
-2  
10  
-2  
10  
tf  
-3  
10  
-3  
10  
0
10  
20  
30  
40  
50  
60  
IC(A)  
0
10  
20  
30  
40  
50  
60  
70  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
400  
0/15  
16  
°C  
V
150  
400  
0/15  
30  
°C  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
A
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
Ω
Ω
16  
figure 18.  
FWD  
figure 19.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(IC)  
trr = f(Rgon)  
0,0150  
0,0125  
0,0100  
0,0075  
0,0050  
0,0025  
0,0000  
0,0150  
0,0125  
0,0100  
0,0075  
0,0050  
0,0025  
0,0000  
trr  
trr  
trr  
trr  
trr  
trr  
0
10  
20  
30  
40  
50  
60  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
400  
0/15  
16  
V
V
Ω
125 °C  
150 °C  
400  
0/15  
30  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
13  
13 Jul. 2022 / Revision 2  
10-FZ07B2A030SM08-M575L408  
datasheet  
Boost Switching Characteristics  
figure 20.  
FWD  
figure 21.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Qr = f(IC)  
Qr = f(Rgon)  
0,08  
0,07  
0,06  
0,05  
0,04  
0,03  
0,02  
0,01  
0,00  
0,07  
0,06  
0,05  
0,04  
0,03  
0,02  
0,01  
0,00  
Qr  
Qr  
Qr  
Qr  
Qr  
Qr  
0
10  
20  
30  
40  
50  
60  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
400  
0/15  
16  
V
V
Ω
125 °C  
150 °C  
400  
0/15  
30  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 22.  
FWD  
figure 23.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
IRM = f(IC)  
IRM = f(Rgon)  
15,0  
12,5  
10,0  
7,5  
17,5  
15,0  
12,5  
10,0  
7,5  
IRM  
IRM  
IRM  
5,0  
IRM  
IRM  
IRM  
5,0  
2,5  
2,5  
0,0  
0,0  
0
10  
20  
30  
40  
50  
60  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
400  
0/15  
16  
V
V
Ω
125 °C  
150 °C  
400  
0/15  
30  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
14  
13 Jul. 2022 / Revision 2  
10-FZ07B2A030SM08-M575L408  
datasheet  
Boost Switching Characteristics  
figure 24.  
FWD  
figure 25.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgon)  
4500  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
4000  
dirr/dt ──────  
3500  
3000  
2500  
2000  
1500  
1000  
500  
0
0
10  
20  
30  
40  
50  
60  
IC(A)  
0
10  
20  
30  
40  
50  
60  
70  
R
gon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
400  
0/15  
16  
V
V
Ω
125 °C  
150 °C  
400  
0/15  
30  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 26.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
70  
IC MAX  
60  
50  
40  
30  
20  
10  
0
0
100  
200  
300  
400  
500  
600  
700  
800  
V
CE(V)  
Tj =  
At  
150  
°C  
Rgon  
Rgoff  
=
=
16  
16  
Ω
Ω
Copyright Vincotech  
15  
13 Jul. 2022 / Revision 2  
10-FZ07B2A030SM08-M575L408  
datasheet  
Boost Switching Definitions  
figure 27.  
IGBT  
figure 28.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
IC  
VGE  
VGE  
VCE  
tEoff  
VCE  
tEon  
figure 29.  
IGBT  
figure 30.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
Copyright Vincotech  
16  
13 Jul. 2022 / Revision 2  
10-FZ07B2A030SM08-M575L408  
datasheet  
Boost Switching Definitions  
figure 31.  
FWD  
figure 32.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Qr  
IF  
IF  
fitted  
VF  
Copyright Vincotech  
17  
13 Jul. 2022 / Revision 2  
10-FZ07B2A030SM08-M575L408  
datasheet  
Ordering Code  
Version  
Ordering Code  
Without thermal paste  
10-FZ07B2A030SM08-M575L408  
10-FZ07B2A030SM08-M575L408-/7/  
10-FZ07B2A030SM08-M575L408-/3/  
With thermal paste (5,2 W/mK, PTM6000HV)  
With thermal paste (3,4 W/mK, PSX-P7)  
Marking  
Name  
Date code  
UL & VIN  
Lot  
Serial  
Text  
NN-NNNNNNNNNNNNNN-  
TTTTTTVV  
WWYY  
UL VIN  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
WWYY  
Outline  
Pin table [mm]  
Pin  
1
X
Y
0
0
0
0
Function  
NTC1  
33,3  
30,7  
2
NTC2  
3
23,85  
15,95  
Boost3  
Boost2  
4
5
not assembled  
6
2,6  
0
0
DC+  
DC+  
DC-  
7
0
22,3  
8
0
9
not assembled  
not assembled  
22,3  
10  
11  
12  
13  
14  
15  
16  
13,1  
15,9  
19,4  
27,7  
30,7  
33,3  
DC-  
S2  
22,3  
22,3  
G2  
S3  
22,3  
22,3  
G3  
DC-  
22,3  
Copyright Vincotech  
18  
13 Jul. 2022 / Revision 2  
10-FZ07B2A030SM08-M575L408  
datasheet  
Pinout  
DC+  
6, 7  
D25  
D27  
Boost1  
Boost2  
3
4
C25  
C27  
T25  
T27  
D45  
D47  
G25  
S25  
G27  
S27  
15  
14  
13  
12  
Rt  
Therm1  
Therm2  
2
DC-  
8, 11, 16  
1
Identification  
Component  
Voltage  
Current  
Function  
Comment  
ID  
T25, T27  
D25, D27  
D45, D47  
C25, C27  
Rt  
IGBT  
FWD  
650 V  
650 V  
1600 V  
630 V  
30 A  
16 A  
18 A  
Boost Switch  
Boost Diode  
Rectifier  
Capacitor  
Thermistor  
Boost Sw. Protection Diode  
Capacitor (DC)  
Thermistor  
Copyright Vincotech  
19  
13 Jul. 2022 / Revision 2  
10-FZ07B2A030SM08-M575L408  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 135  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow 0 packages see vincotech.com website.  
Package data  
Package data for flow 0 packages see vincotech.com website.  
Vincotech thermistor reference  
See Vincotech thermistor reference table at vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
Correct Boost Diode Maximum Ratings according to  
10-FZ07B2A030SM08-M575L408-D2-14  
13 Jul. 2022  
PCN-31-2022  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
20  
13 Jul. 2022 / Revision 2  

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