10-FZ07BIA030SM02-P894E58 [VINCOTECH]
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;
| 型号： | 10-FZ07BIA030SM02-P894E58 |
| 厂家： | 
VINCOTECH |
| 描述： | High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge |
| 文件： | 总32页 (文件大小：1780K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FZ07BIA030SM02-P894E58
10-PZ07BIA030SM02-P894E58Y
datasheet
flowSOL 0 BI (TL)
650 V / 30 A
Features
flow 0 12 mm housing
● High efficiency
● Ultra fast switching frequency
● Low inductive design
● IGBT H5 + ultrafast Si diode in Boost and H-bridge
Solder pin
Press-fit pin
Schematic
Target applications
● Transformerless solar inverters
Types
● 10-FZ07BIA030SM02-P894E58
● 10-PZ07BIA030SM02-P894E58Y
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
H-Bridge Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
29
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
90
A
57
W
V
±20
175
Maximum junction temperature
°C
Copyright Vincotech
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10-FZ07BIA030SM02-P894E58
10-PZ07BIA030SM02-P894E58Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
H-Bridge Diode
VRRM
IF
Ptot
Tjmax
Peak repetitive reverse voltage
650
13
V
A
Continuous (direct) forward current
Total power dissipation
Tj = Tjmax
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
25
W
°C
Maximum junction temperature
175
Boost Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
29
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
90
A
57
W
V
±20
175
Maximum junction temperature
°C
Boost Diode
VRRM
IF
Ptot
Tjmax
Peak repetitive reverse voltage
650
13
V
A
Continuous (direct) forward current
Total power dissipation
Tj = Tjmax
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
25
W
°C
Maximum junction temperature
175
Boost Sw.Prot. Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
10
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
20
A
Tj = Tjmax
39
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
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datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
ByPass Diode
VRRM
IF
IFSM
I2t
Ptot
Tjmax
Peak repetitive reverse voltage
1600
35
V
A
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
60 Hz Single Half Sine Wave
tp = 10 ms 50 Hz sine
Tj = Tjmax
270
370
60
A
Tj = 150 °C
Ts = 80 °C
A2s
W
°C
Total power dissipation
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
min. 12,7
mm
mm
Solder pin
8,66
9,17
Clearance
Press-fit pin
Comparative Tracking Index
*100 % tested in production
CTI
> 200
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
H-Bridge Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VGE = VCE
0,0003 25
3,3
4
4,7
V
V
25
1,63
1,65
2,22
15
0
30
125
650
0
25
25
40
µA
nA
Ω
20
120
none
1800
45
Cies
Coes
Cres
Qg
Output capacitance
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
7
15
520
30
70
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,67
K/W
Dynamic
25
66
66
67
Turn-on delay time
td(on)
125
150
25
7
Rise time
tr
125
150
25
9
10
70
Rgon = 16 Ω
Rgoff = 16 Ω
ns
Turn-off delay time
Fall time
td(off)
125
150
25
125
150
25
125
150
25
86
88
4
10
±15
400
30
tf
13
0,659
0,963
1,04
0,142
0,253
Qr
FWD
Qr
FWD
Qr
FWD
= 1,1 μC
= 2,4 μC
= 3,5 μC
Turn-on energy (per pulse)
Eon
mWs
125
Eoff
Turn-off energy (per pulse)
150
0,281
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
H-Bridge Diode
Static
25
1,44
1,20
1,14
VF
IR
Forward voltage
15
125
150
V
Reverse leakage current
650
25
5
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,81
K/W
Dynamic
25
33
48
54
IRRM
125
150
25
Peak recovery current
A
89
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
115
129
ns
di/dt = 3260 A/μs
di/dt = 2940 A/μs
di/dt = 3459 A/μs
1,08
2,37
3,50
0,198
0,481
0,888
2649
1253
1360
±15
400
30
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
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10-PZ07BIA030SM02-P894E58Y
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Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VGE = VCE
0,0003 25
3,3
4
4,7
V
V
25
1,63
1,65
2,22
15
0
30
125
650
0
25
25
40
µA
nA
Ω
20
120
none
1800
45
Cies
Coes
Cres
Qg
f = 1 Mhz
Output capacitance
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
7
15
520
30
70
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,67
K/W
Dynamic
25
20
19
17
Turn-on delay time
td(on)
125
150
25
8
Rise time
tr
125
150
25
125
150
25
125
150
25
125
150
25
9
10
137
155
159
4
Rgon = 16 Ω
Rgoff = 16 Ω
ns
Turn-off delay time
Fall time
td(off)
0 / 15
400
30
tf
9
10
0,618
0,894
0,962
0,172
0,305
Qr
FWD
Qr
FWD
Qr
FWD
= 1,1 μC
= 2,3 μC
= 2,7 μC
Turn-on energy (per pulse)
Eon
mWs
125
Eoff
Turn-off energy (per pulse)
150
0,326
Copyright Vincotech
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10-PZ07BIA030SM02-P894E58Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Diode
Static
25
1,44
1,20
1,14
VF
IR
Forward voltage
15
125
150
V
Reverse leakage current
650
25
5
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,81
K/W
Dynamic
25
33
50
56
IRRM
125
150
25
Peak recovery current
A
92
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
113
121
ns
di/dt = 2879 A/μs
di/dt = 2826 A/μs
di/dt = 2747 A/μs
1,10
2,28
2,72
0,213
0,489
0,605
2721
1492
1645
0 / 15
400
30
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Boost Sw.Prot. Diode
Static
25
1,67
1,56
1,87
0,14
Forward voltage
Reverse leakage current
Thermal
VF
IR
10
V
125
650
25
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
2,44
K/W
ByPass Diode
Static
25
0,99
0,90
1,21
Forward voltage
Reverse leakage current
Thermal
VF
IR
13
V
125
25
50
1600
µA
150
1100
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,16
K/W
Copyright Vincotech
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1486 Ω
-12
+14
200
2
mW
mW/K
K
B(25/50) Tol. ±3%
B(25/100) Tol. ±3%
3950
3998
B-value
K
Vincotech NTC Reference
B
Copyright Vincotech
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10-FZ07BIA030SM02-P894E58
10-PZ07BIA030SM02-P894E58Y
datasheet
H-Bridge Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
I C = f(VCE)
100
90
VGE
:
7 V
I
I
I
I
I
I
I
I
8 V
75
60
45
30
15
0
9 V
80
60
40
20
0
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
1
2
3
4
5
0
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
V
25 °C
125 °C
tp
Tj
=
=
250
125
μs
°C
Tj:
VGE
=
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
IC = f(VGE
)
Z th(j-s) = f(tp)
101
30
I
I
I
I
25
20
15
10
5
Z
Z
Z
Z
100
10-1
10-2
10-3
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
0
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
0
2
4
6
8
VG E (V)
tp
=
100
10
μs
V
25 °C
125 °C
D =
R th(j-s)
tp / T
Tj:
VCE
=
=
1,67
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,80E-01
3,72E-01
6,39E-01
3,20E-01
1,54E-01
1,06E+00
1,72E-01
5,52E-02
1,27E-02
3,03E-03
Copyright Vincotech
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10-PZ07BIA030SM02-P894E58Y
datasheet
H-Bridge Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
15
100
130 V
V
V
V
V
I I
I I
520 V
12,5
10
7,5
5
10
1
0,1
2,5
0
0,01
0
10
20
30
40
50
60
70
80
QG (nC)
1
10
100
1000
VC E (V)
D =
single pulse
80 ºC
IC
=
30
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
figure 7.
Power dissipation as a
IGBT
figure 8.
IGBT
Collector current as a
function of heatsink temperature
I C = f(T h)
function of heatsink temperature
P tot = f(T h)
120
100
80
60
40
20
0
35
30
25
20
15
10
5
0
T h
(
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
At
T j
At
T j
=
=
175
°C
175
15
°C
V
V GE
=
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10-PZ07BIA030SM02-P894E58Y
datasheet
H-Bridge Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
50
40
30
20
10
0
Z
Z
Z
Z
100
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp (s)
0
0,5
1
1,5
2
2,5
3
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
1,81
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
7,18E-02
2,48E-01
8,26E-01
3,94E-01
2,67E-01
2,84E+00
2,83E-01
5,02E-02
8,85E-03
1,33E-03
figure 3.
Power dissipation as a
FWD
figure 4.
FWD
Forward current as a
function of heatsink temperature
function of heatsink temperature
P tot = f(T h)
I F = f(T h)
120
100
80
60
40
20
0
20
15
10
5
0
T h
(
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
T j =
T j =
175
°C
175
°C
Copyright Vincotech
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10-PZ07BIA030SM02-P894E58Y
datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
I C = f(VCE)
100
90
VGE
:
7 V
I
I
I
I
I
I
I
I
8 V
75
60
45
30
15
0
9 V
80
60
40
20
0
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
1
2
3
4
5
0
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
V
25 °C
125 °C
tp
Tj
=
=
250
125
μs
°C
Tj:
VGE
=
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
IC = f(VGE
)
Z th(j-s) = f(tp)
101
30
I
I
I
I
25
20
15
10
5
Z
Z
Z
Z
100
10-1
10-2
10-3
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
0
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
0
2
4
6
8
VG E (V)
tp
=
100
10
μs
V
25 °C
125 °C
D =
R th(j-s)
tp / T
Tj:
VCE
=
=
1,67
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,80E-01
3,72E-01
6,39E-01
3,20E-01
1,54E-01
1,06E+00
1,72E-01
5,52E-02
1,27E-02
3,03E-03
Copyright Vincotech
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datasheet
Boost Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
15
100
130 V
V
V
V
V
I I
I I
520 V
12,5
10
7,5
5
10
1
0,1
2,5
0
0,01
0
10
20
30
40
50
60
70
80
QG (nC)
1
10
100
1000
VC E (V)
D =
single pulse
80 ºC
I C
=
30
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
figure 7.
Power dissipation as a
IGBT
figure 8.
IGBT
Collector current as a
function of heatsink temperature
I C = f(T h)
function of heatsink temperature
P tot = f(T h)
120
100
80
60
40
20
0
35
30
25
20
15
10
5
0
T h
(
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
T j =
T j =
175
°C
175
15
°C
V
V GE
=
Copyright Vincotech
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datasheet
Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
50
40
30
20
10
0
Z
Z
Z
Z
100
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp (s)
0
0,5
1
1,5
2
2,5
3
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
1,81
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
7,18E-02
2,48E-01
8,26E-01
3,94E-01
2,67E-01
2,84E+00
2,83E-01
5,02E-02
8,85E-03
1,33E-03
figure 3.
Power dissipation as a
FWD
figure 4.
FWD
Forward current as a
function of heatsink temperature
function of heatsink temperature
P tot = f(T h)
I F = f(T h)
120
100
80
60
40
20
0
20
15
10
5
0
T h
(
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
T j =
T j =
175
°C
175
°C
Copyright Vincotech
14
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10-PZ07BIA030SM02-P894E58Y
datasheet
Boost Sw.Prot. Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
30
25
20
15
10
5
Z
Z
Z
Z
100
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
0
10-4
=
10-3
10-2
10-1
100
101
102
tp (s)
0
0,5
1
1,5
μs
2
2,5
3
3,5
4
4,5
VF (V)
5
tp
=
250
25 °C
125 °C
D =
R th(j-s)
tp / T
2,44
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
5,82E-02
1,74E-01
5,97E-01
5,84E-01
6,14E-01
4,16E-01
5,62E+00
6,53E-01
1,47E-01
3,86E-02
8,85E-03
1,98E-03
Figure 3
Power dissipation as a
FWD
Figure 4
FWD
Forward current as a
function of heatsink temperature
function of heatsink temperature
P tot = f(T h)
I F = f(T h)
80
60
40
20
0
16
14
12
10
8
6
4
2
0
T h
(
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
T j
=
T j
=
175
ºC
175
ºC
Copyright Vincotech
15
17 Sep. 2018 / Revision 4
10-FZ07BIA030SM02-P894E58
10-PZ07BIA030SM02-P894E58Y
datasheet
ByPass Diode Characteristics
figure 1.
Rectifier Diode
figure 2.
Rectifier Diode
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
40
Z
Z
Z
Z
30
20
10
0
100
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp (s)
0
0,5
1
1,5
2
2,5
3
VF (V)
tp
=
250
μs
25 °C
125 °C
D =
R th(j-s)
tp / T
1,16
Tj:
K/W
Diode thermal model values
R (K/W)
τ
(s)
5,14E-02
1,22E-01
5,42E-01
3,74E-01
9,37E-02
1,28E+01
9,21E-01
1,28E-01
2,87E-02
2,38E-03
Figure 3
Power dissipation as a
Rectifier diode
Figure 4
Rectifier diode
Forward current as a
function of heatsink temperature
function of heatsink temperature
P tot = f(T h)
I F = f(T h)
160
140
120
100
80
40
30
20
10
0
60
40
20
0
T h
(
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
T j
=
T j
=
175
ºC
175
ºC
Copyright Vincotech
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17 Sep. 2018 / Revision 4
10-FZ07BIA030SM02-P894E58
10-PZ07BIA030SM02-P894E58Y
datasheet
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic
as a function of temperature
R = f(T)
NTC-typical temperature characteristic
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
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17 Sep. 2018 / Revision 4
10-FZ07BIA030SM02-P894E58
10-PZ07BIA030SM02-P894E58Y
datasheet
H-Bridge Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
2
2
E
E
E
E
E E
E E
Eon
Eon
Eon
Eon
1,5
1,5
Eon
Eon
1
1
Eoff
Eoff
0,5
0,5
Eoff
Eoff
Eoff
Eoff
0
0
0
10
20
30
40
25 °C
50
60
0
10
20
30
40
50
60
70
Rg (Ω)
IC (A)
With an inductive load at
With an inductive load at
25 °C
VCE
VGE
=
=
=
=
400
±15
16
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
400
±15
30
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
16
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
1,2
1,2
Erec
E
E
E
E
E
E
E
E
0,9
0,6
0,3
0
0,9
0,6
0,3
0
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
IC (A)
Rg (Ω)
With an inductive load at
25 °C
With an inductive load at
25 °C
400
±15
16
V
V
Ω
400
±15
30
V
V
A
VCE
VGE
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
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17 Sep. 2018 / Revision 4
10-FZ07BIA030SM02-P894E58
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datasheet
H-Bridge Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
1
1
t
t
t
t
t
t
t
t
td(on)
td(off)
td(off)
0,1
0,1
td(on)
tr
tr
tf
0,01
0,01
tf
0,001
0,001
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
Rg (Ω)
IC (A)
With an inductive load at
With an inductive load at
150
400
±15
16
°C
V
150
400
±15
30
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
16
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon)
0,16
0,25
trr
trr
t
t
t
t
t
t
t
t
trr
trr
0,2
0,15
0,1
0,05
0
trr
trr
0,12
0,08
0,04
0
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
Rg on (Ω)
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
=
=
=
400
±15
16
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
400
±15
30
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
Copyright Vincotech
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17 Sep. 2018 / Revision 4
10-FZ07BIA030SM02-P894E58
10-PZ07BIA030SM02-P894E58Y
datasheet
H-Bridge Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
5
5
Qr
Q
Q
Q
Q
Q
Q
Q
Q
4
3
2
1
0
4
3
2
1
0
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
25 °C
50
60
0
10
20
30
40
50
60
70
Rg on (Ω)
IC (A)
With an inductive load at
With an inductive load at
25 °C
400
±15
16
V
V
Ω
400
±15
30
V
V
A
VCE
VGE
=
=
=
Tj:
VCE=
VGE =
I C=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
100
150
I
I
I I
I I
I
I
80
60
40
20
0
120
90
60
30
0
IRM
IRM
IRM
IRM
IRM
IRM
0
10
20
30
40
50
60
70
Rgo n (Ω)
0
10
20
30
40
25 °C
50
60
IC (A)
With an inductive load at
With an inductive load at
25 °C
400
±15
16
V
V
Ω
400
±15
30
V
V
A
VCE
VGE
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
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17 Sep. 2018 / Revision 4
10-FZ07BIA030SM02-P894E58
10-PZ07BIA030SM02-P894E58Y
datasheet
H-Bridge Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon
)
12000
8000
diF/dt
dirr/dt
d
iF
/
/
dt
dt
t
t
t t
t t
t
t
dirr
i
i
i i
i i
i
i
9000
6000
3000
0
6000
4000
2000
0
0
10
20
30
40
50
60
70
Rg on (Ω)
0
10
20
30
40
50
60
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
400
±15
16
V
V
Ω
400
±15
30
V
VCE
VGE
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
V
A
R gon
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
70
IC MAX
I
I
I
I
60
50
40
30
20
10
0
I
I
I
I
I
I
I
I
V
V
V
V
0
100
200
300
400
500
600
700
VC E (V)
At
Tj =
125
°C
Ω
R gon
R goff
=
=
16
16
Ω
Copyright Vincotech
21
17 Sep. 2018 / Revision 4
10-FZ07BIA030SM02-P894E58
10-PZ07BIA030SM02-P894E58Y
datasheet
H-Bridge Switching Definitions
General conditions
=
=
=
125 °C
16 Ω
16 Ω
T j
Rgon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t
(µs)
t (µs)
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
400
30
V
400
30
V
A
A
86
ns
66
ns
t doff
=
tdon
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t
(µs)
t
(µs)
VC (100%) =
I C (100%) =
t f =
400
30
V
VC (100%) =
I C (100%) =
400
30
9
V
A
A
10
ns
tr
=
ns
Copyright Vincotech
22
17 Sep. 2018 / Revision 4
10-FZ07BIA030SM02-P894E58
10-PZ07BIA030SM02-P894E58Y
datasheet
H-Bridge Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t
(µs)
t
(µs)
400
30
V
30
A
VF (100%) =
I F (100%) =
I RRM (100%) =
I F (100%) =
Q r (100%) =
A
2,37
μC
48
A
115
ns
t rr
=
Copyright Vincotech
23
17 Sep. 2018 / Revision 4
10-FZ07BIA030SM02-P894E58
10-PZ07BIA030SM02-P894E58Y
datasheet
Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
2
2
E
E
E
Eon
Eon
E
E
E
E
E
1,6
1,2
0,8
0,4
0
Eon
Eon
1,5
Eon
Eon
1
Eoff
Eoff
Eoff
Eoff
Eoff
0,5
Eoff
0
0
10
20
30
40
25 °C
50
60
0
10
20
30
40
50
60
70
R
g (Ω)
IC (A)
With an inductive load at
With an inductive load at
25 °C
VCE
VGE
=
=
=
=
400
0 / 15
16
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
400
0 / 15
30
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
16
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
1
1,2
E
E
E
E
E
E
E
E
Erec
0,8
0,6
0,4
0,2
0
0,9
0,6
0,3
0
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
IC (A)
R
g (Ω)
With an inductive load at
25 °C
With an inductive load at
25 °C
400
0 / 15
16
V
V
Ω
400
0 / 15
30
V
V
A
VCE
VGE
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
24
17 Sep. 2018 / Revision 4
10-FZ07BIA030SM02-P894E58
10-PZ07BIA030SM02-P894E58Y
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
1
1
td(off )
t
t
t
t
t
t
t
t
td(off )
0,1
0,1
td(on)
tr
td(on)
tr
tf
0,01
0,01
tf
0,001
0,001
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
R
g (Ω)
IC (A)
With an inductive load at
With an inductive load at
150
400
0 / 15
16
°C
V
150
400
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
0 / 15
30
V
Ω
Ω
A
16
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon)
0,16
0,2
trr
trr
trr
trr
t
t
t
t
t
t
t
t
trr
0,12
0,08
0,04
0
0,15
0,1
0,05
0
trr
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
Rg on (Ω)
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
=
=
=
400
0 / 15
16
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
400
0 / 15
30
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
Copyright Vincotech
25
17 Sep. 2018 / Revision 4
10-FZ07BIA030SM02-P894E58
10-PZ07BIA030SM02-P894E58Y
datasheet
Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
5
4
Q
Q
Q
Q
Q
Q
Q
Q
Qr
Qr
4
3
2
1
0
3
2
1
0
Qr
Qr
Qr
Qr
0
10
20
30
40
25 °C
50
60
0
10
20
30
40
50
60
70
Rg on (Ω)
IC (A)
With an inductive load at
With an inductive load at
25 °C
400
0 / 15
16
V
V
Ω
400
0 / 15
30
V
V
A
VCE
VGE
=
=
=
Tj:
VCE=
VGE =
I C=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
100
120
IRM
I
I
I I
I I
I
I
80
60
40
20
0
90
60
30
0
IRM
IRM
IRM
IRM
IRM
0
10
20
30
40
50
60
70
Rgo n (Ω)
0
10
20
30
40
25 °C
50
60
IC (A)
With an inductive load at
With an inductive load at
25 °C
400
0 / 15
16
V
V
Ω
400
0 / 15
30
V
V
A
VCE
VGE
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
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17 Sep. 2018 / Revision 4
10-FZ07BIA030SM02-P894E58
10-PZ07BIA030SM02-P894E58Y
datasheet
Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon
)
12000
8000
diF/dt
d
iF
/
/
dt
dt
t
t
t t
t t
t
t
dirr/dt
dirr
i
i
i i
i i
i
i
10000
8000
6000
4000
2000
0
6000
4000
2000
0
0
10
20
30
40
50
60
70
g on (Ω)
0
10
20
30
40
50
60
R
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
400
0 / 15
16
V
V
Ω
400
0 / 15
30
V
VCE
VGE
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
V
A
R gon
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
70
IC MAX
I
I
I
I
60
50
40
30
20
10
0
I
I
I
I
I
I
I
I
V
V
V
V
0
100
200
300
400
500
600
700
C E (V)
V
At
Tj =
125
°C
Ω
R gon
R goff
=
=
16
16
Ω
Copyright Vincotech
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10-FZ07BIA030SM02-P894E58
10-PZ07BIA030SM02-P894E58Y
datasheet
Boost Switching Definitions
General conditions
=
=
=
125 °C
16 Ω
16 Ω
T j
Rgon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t
(µs)
t (µs)
VGE (0%) =
0
V
VGE (0%) =
0
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
400
30
155
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
V
400
30
V
A
A
ns
19
ns
t doff
=
tdon
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t
(µs)
t
(µs)
VC (100%) =
I C (100%) =
t f =
400
30
9
V
VC (100%) =
I C (100%) =
400
30
9
V
A
A
ns
tr
=
ns
Copyright Vincotech
28
17 Sep. 2018 / Revision 4
10-FZ07BIA030SM02-P894E58
10-PZ07BIA030SM02-P894E58Y
datasheet
Boost Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t
(µs)
t
(µs)
400
30
V
30
A
VF (100%) =
I F (100%) =
I RRM (100%) =
I F (100%) =
Q r (100%) =
A
2,28
μC
50
A
113
ns
t rr
=
Copyright Vincotech
29
17 Sep. 2018 / Revision 4
10-FZ07BIA030SM02-P894E58
10-PZ07BIA030SM02-P894E58Y
datasheet
Ordering Code & Marking
Version
without thermal paste 12 mm housing with solder pins
with thermal paste 12 mm housing with solder pins
without thermal paste 12 mm housing with Press-fit pins
with thermal paste 12 mm housing with Press-fit pins
Ordering Code
10-FZ07BIA030SM02-P894E58
10-FZ07BIA030SM02-P894E58-/3/
10-PZ07BIA030SM02-P894E58Y
10-PZ07BIA030SM02-P894E58Y-/3/
Name
Date code
WWYY
Serial
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
X
Y
0
Function
G4
28,7
25,9
23,1
17,6
12,1
9,3
2,8
0
1
2
0
S4
3
0
-INV
+INV
G3
4
0
5
0
6
0
S3
7
0
G5
8
0
S5
9
0
5,05
10,55
16,15
22,6
22,6
22,6
22,6
22,6
22,6
22,6
20,05
14,55
8,05
2,55
-DC
+DC
Sol
Boost
S1
10
11
12
13
14
15
16
17
18
19
20
21
22
0
0
0
9,3
12,1
17,6
23,1
25,9
28,7
33,6
33,6
33,6
33,6
G1
+INV
-INV
S2
G2
L1
R1
R2
L2
23
Not assembled
Copyright Vincotech
30
17 Sep. 2018 / Revision 4
10-FZ07BIA030SM02-P894E58
10-PZ07BIA030SM02-P894E58Y
datasheet
Pinout
Identification
ID
Component
IGBT
Voltage
650 V
650 V
650 V
650 V
650 V
1600 V
Current
Function
H-Bridge Switch
H-Bridge Diode
Boost Switch
Boost Diode
Comment
T1, T2, T3, T4
30 A
15 A
30 A
15 A
10 A
35 A
D1, D2, D3, D4
FWD
T5
D8
IGBT
FWD
D5
FWD
Boost Sw.Prot. Diode
ByPass Diode
D7
Rectifier
NTC
NTC
Thermistor
Copyright Vincotech
31
17 Sep. 2018 / Revision 4
10-FZ07BIA030SM02-P894E58
10-PZ07BIA030SM02-P894E58Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Corrected Power dissipation graphs and max current ratings,
Added boost dynamic parameters
1,2,3,6,7,
9-16,23-28
10-FZ07BIA030SM02-P894E58-D4-14
17 Sep. 2018
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
32
17 Sep. 2018 / Revision 4
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