10-PG06PPA050SJ02-LH94E08T [VINCOTECH]
5us short circuit withstand time;High speed switching;Low EMI;Short tail current;![10-PG06PPA050SJ02-LH94E08T](http://pdffile.icpdf.com/pdf2/p00358/img/icpdf/10-PG06PPA05_2196803_icpdf.jpg)
型号: | 10-PG06PPA050SJ02-LH94E08T |
厂家: | ![]() |
描述: | 5us short circuit withstand time;High speed switching;Low EMI;Short tail current |
文件: | 总29页 (文件大小:9219K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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10-PG06PPA050SJ02-LH94E08T
datasheet
flowPIM 1 + PFC
600 V / 50 A
Features
flow 1 12 mm housing
● Highly integrated PIM with interleaved PFC circuit
● High switching frequency PFC circuit
● On-board capacitors
● New generation high speed IGBTs in the inverter
Schematic
Target applications
● Embedded Drives
● Industrial Drives
Types
● 10-PG06PPA050SJ02-LH94E08T
Copyright Vincotech
1
26 Sep. 2021 / Revision 3
10-PG06PPA050SJ02-LH94E08T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
600
49
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
150
81
A
Ptot
W
V
VGES
Gate-emitter voltage
±20
5
tSC
Short circuit ratings
VGE = 15 V, VCC = 400 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
600
36
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
60
A
Ptot
58
W
°C
Tjmax
Maximum junction temperature
175
PFC Switch
VCES
Collector-emitter voltage
650
29
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
90
A
Ptot
68
W
V
VGES
Gate-emitter voltage
±20
175
Tjmax
Maximum junction temperature
°C
Copyright Vincotech
2
26 Sep. 2021 / Revision 3
10-PG06PPA050SJ02-LH94E08T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
PFC Diode
VRRM
Peak repetitive reverse voltage
650
32
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
180
59
A
Ptot
W
°C
Tjmax
Maximum junction temperature
175
PFC Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
650
18
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
20
A
Ptot
33
W
°C
Tjmax
Maximum junction temperature
175
Capacitor (PFC)
VMAX
Maximum DC voltage
630
V
Top
Operation Temperature
-55 ... 150
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
>12,7
8,05
V
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
3
26 Sep. 2021 / Revision 3
10-PG06PPA050SJ02-LH94E08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0008
50
25
4,1
5,1
5,7
V
V
25
1,49
1,61
1,64
1,8(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
600
0
25
25
2,8
µA
nA
Ω
20
100
None
1950
83
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
67
VCC = 480 V
15
50
249
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,18
K/W
25
70
td(on)
Turn-on delay time
Rise time
125
150
25
70
ns
ns
71,2
45,2
43,2
42,8
114,8
133,6
138,6
22,47
34,2
41,12
1,84
2,2
tr
125
150
25
Rgon = 8 Ω
Rgoff = 8 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
350
50
tf
125
150
25
ns
QrFWD=1,62 µC
QrFWD=3,09 µC
QrFWD=3,57 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
2,28
0,536
0,839
0,941
Eoff
125
150
Copyright Vincotech
4
26 Sep. 2021 / Revision 3
10-PG06PPA050SJ02-LH94E08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,25
1,64
1,55
1,95(1)
27
VF
IR
Forward voltage
30
V
150
Reverse leakage current
Vr = 600 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,63
K/W
25
10,63
16,09
16,77
251,47
331,66
392,82
1,62
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=245 A/µs
di/dt=545 A/µs
di/dt=378 A/µs
Qr
Recovered charge
±15
350
50
125
150
25
3,09
μC
3,57
0,406
0,762
0,892
76,03
88,46
100,72
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
5
26 Sep. 2021 / Revision 3
10-PG06PPA050SJ02-LH94E08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,0003
30
25
3,3
4
4,7
V
25
1,97
2,25
2,22(1)
15
0
V
125
650
0
25
25
40
µA
nA
Ω
20
120
None
2100
45
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
7,7
VCC = 520 V
15
30
65
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,39
K/W
25
12
12
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
13
8
tr
125
150
25
8
8
Rgon = 8 Ω
Rgoff = 8 Ω
80
td(off)
Turn-off delay time
Fall time
125
150
25
94
ns
98
0/15
400
30
7,96
9,61
10,37
0,391
0,524
0,451
0,086
0,207
0,332
tf
125
150
25
ns
QrFWD=0,394 µC
QrFWD=0,956 µC
QrFWD=1,17 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
6
26 Sep. 2021 / Revision 3
10-PG06PPA050SJ02-LH94E08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Diode
Static
25
2,47
2,03
2,6(1)
10
VF
IR
Forward voltage
Reverse leakage current
30
V
125
Vr = 650 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,61
K/W
25
24,18
39,85
45,05
18,85
47,2
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
50,43
0,394
0,956
1,17
di/dt=4524 A/µs
di/dt=4528 A/µs
di/dt=4350 A/µs
Qr
Recovered charge
0/15
400
30
125
150
25
μC
0,088
0,221
0,275
2361
2958
3147
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
7
26 Sep. 2021 / Revision 3
10-PG06PPA050SJ02-LH94E08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
PFC Sw. Protection Diode
Static
25
1,23
1,67
1,54
1,87(1)
0,14
VF
IR
Forward voltage
10
V
125
Reverse leakage current
Thermal
Vr = 650 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
2,87
K/W
Capacitor (PFC)
Static
DC bias voltage =
0 V
C
Capacitance
Tolerance
25
33
nF
%
-5
5
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
8
26 Sep. 2021 / Revision 3
10-PG06PPA050SJ02-LH94E08T
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
150
125
VGE
:
7 V
8 V
125
100
75
50
25
0
9 V
100
75
50
25
0
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
250
150
μs
°C
25 °C
VGE
=
Tj =
V
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
50
10
40
30
20
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
1,176
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,28E-01
3,00E-01
5,67E-01
1,34E-01
4,70E-02
9,19E-01
1,49E-01
4,76E-02
6,63E-03
5,83E-04
Copyright Vincotech
9
26 Sep. 2021 / Revision 3
10-PG06PPA050SJ02-LH94E08T
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
10µs
100
10
100µs
1ms
1
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
10
26 Sep. 2021 / Revision 3
10-PG06PPA050SJ02-LH94E08T
datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,633
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
7,13E-02
1,55E-01
7,25E-01
3,93E-01
1,57E-01
1,32E-01
2,70E+00
3,01E-01
5,48E-02
1,54E-02
2,76E-03
4,03E-04
Copyright Vincotech
11
26 Sep. 2021 / Revision 3
10-PG06PPA050SJ02-LH94E08T
datasheet
PFC Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
80
80
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
60
40
20
60
40
20
0
0
0
0
1
2
3
4
5
6
1
2
3
4
5
6
V
CE(V)
VCE(V)
tp
VGE
=
=
tp
=
250
15
μs
V
250
125
μs
°C
25 °C
Tj:
Tj =
125 °C
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
30
10
25
20
15
10
5
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
1
2
3
4
5
6
7
8
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
1,394
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,66E-02
1,95E-01
5,59E-01
3,47E-01
9,37E-02
1,12E-01
1,03E+00
1,93E-01
5,17E-02
9,99E-03
1,86E-03
2,95E-04
Copyright Vincotech
12
26 Sep. 2021 / Revision 3
10-PG06PPA050SJ02-LH94E08T
datasheet
PFC Switch Characteristics
figure 12.
IGBT
figure 13.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
100
17,5
15,0
12,5
10,0
7,5
10
1
5,0
0,1
0,01
2,5
0,0
1
10
100
1000
10000
0
10
20
30
40
50
60
70
V
CE(V)
Qg(μC)
D =
IC
=
single pulse
30
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
13
26 Sep. 2021 / Revision 3
10-PG06PPA050SJ02-LH94E08T
datasheet
PFC Diode Characteristics
figure 14.
FWD
figure 15.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,615
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
6,26E-02
1,57E-01
5,80E-01
4,30E-01
2,34E-01
1,51E-01
3,75E+00
4,48E-01
7,07E-02
1,76E-02
3,12E-03
5,87E-04
Copyright Vincotech
14
26 Sep. 2021 / Revision 3
10-PG06PPA050SJ02-LH94E08T
datasheet
PFC Sw. Protection Diode Characteristics
figure 16.
FWD
figure 17.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
30
25
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,874
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
2,86E-01
5,75E-01
1,57E+00
3,05E-01
1,34E-01
1,08E+00
1,73E-01
4,54E-02
5,64E-03
5,58E-04
Copyright Vincotech
15
26 Sep. 2021 / Revision 3
10-PG06PPA050SJ02-LH94E08T
datasheet
Thermistor Characteristics
figure 18.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
16
26 Sep. 2021 / Revision 3
10-PG06PPA050SJ02-LH94E08T
datasheet
Inverter Switching Characteristics
figure 19.
IGBT
figure 20.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
7
6
5
4
3
2
1
0
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
Ω
125 °C
150 °C
350
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
8
figure 21.
FWD
figure 22.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
1,0
0,8
0,6
0,4
0,2
0,0
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
17
26 Sep. 2021 / Revision 3
10-PG06PPA050SJ02-LH94E08T
datasheet
Inverter Switching Characteristics
figure 23.
IGBT
figure 24.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
td(off)
-1
10
tr
td(on)
tr
tf
-1
10
-2
10
tf
-3
10
-2
10
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
±15
8
°C
V
150
350
±15
50
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 25.
FWD
figure 26.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
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26 Sep. 2021 / Revision 3
10-PG06PPA050SJ02-LH94E08T
datasheet
Inverter Switching Characteristics
figure 27.
FWD
figure 28.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
6
5
4
3
2
1
0
4,5
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 29.
FWD
figure 30.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
20,0
17,5
15,0
12,5
10,0
7,5
35
30
25
20
15
10
5
IRM
IRM
IRM
IRM
IRM
5,0
IRM
2,5
0,0
0
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
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26 Sep. 2021 / Revision 3
10-PG06PPA050SJ02-LH94E08T
datasheet
Inverter Switching Characteristics
figure 31.
FWD
figure 32.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
2250
4000
3500
3000
2500
2000
1500
1000
500
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
2000
dirr/dt ──────
1750
1500
1250
1000
750
500
250
0
0
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 33.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
120
IC MAX
100
80
60
40
20
0
0
100
200
300
400
500
600
700
V
CE(V)
Tj =
At
150
8
°C
Rgon
Rgoff
=
=
Ω
Ω
8
Copyright Vincotech
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26 Sep. 2021 / Revision 3
10-PG06PPA050SJ02-LH94E08T
datasheet
PFC Switching Characteristics
figure 34.
IGBT
figure 35.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
1,0
0,8
0,6
0,4
0,2
0,0
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
10
20
30
40
50
60
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
Ω
125 °C
150 °C
400
0/15
30
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
8
figure 36.
FWD
figure 37.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
0,5
0,4
0,3
0,2
0,1
0,0
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
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26 Sep. 2021 / Revision 3
10-PG06PPA050SJ02-LH94E08T
datasheet
PFC Switching Characteristics
figure 38.
IGBT
figure 39.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
-1
10
-1
10
td(off)
td(on)
tr
td(on)
tf
-2
-2
tf
10
10
10
10
tr
-3
-3
0
10
20
30
40
50
60
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
400
0/15
8
°C
V
150
400
0/15
30
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 40.
FWD
figure 41.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,08
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
0,12
0,10
0,08
0,06
0,04
0,02
0,00
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
22
26 Sep. 2021 / Revision 3
10-PG06PPA050SJ02-LH94E08T
datasheet
PFC Switching Characteristics
figure 42.
FWD
figure 43.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 44.
FWD
figure 45.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
30
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
23
26 Sep. 2021 / Revision 3
10-PG06PPA050SJ02-LH94E08T
datasheet
PFC Switching Characteristics
figure 46.
FWD
figure 47.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
7000
8000
7000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
6000
5000
4000
3000
2000
1000
0
0
10
20
30
40
50
60
IC(A)
0
5
10
15
20
25
30
35
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 48.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
70
IC MAX
60
50
40
30
20
10
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
°C
Rgon
Rgoff
=
=
8
8
Ω
Ω
Copyright Vincotech
24
26 Sep. 2021 / Revision 3
10-PG06PPA050SJ02-LH94E08T
datasheet
Switching Definitions
figure 49.
IGBT
figure 50.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 51.
IGBT
figure 52.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
25
26 Sep. 2021 / Revision 3
10-PG06PPA050SJ02-LH94E08T
datasheet
Switching Definitions
figure 53.
FWD
figure 54.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
26
26 Sep. 2021 / Revision 3
10-PG06PPA050SJ02-LH94E08T
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-PG06PPA050SJ02-LH94E08T
10-PG06PPA050SJ02-LH94E08T-/7/
10-PG06PPA050SJ02-LH94E08T-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
2,7
0
Function
DC+Inv
DC+Inv
Ph3
52,5
52,5
46,2
43,5
43,5
37,2
34,5
34,5
28,2
25,5
22,5
0
2
3
0
4
0
Ph3
5
3
G16
6
0
Ph2
7
0
Ph2
8
3
G14
9
0
Ph1
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
0
Ph1
0
G12
0
PFC1
PFC2
0
6,1
not assembled
not assembled
8,3
25,5
25,5
S25
G25
11,3
not assembled
not assembled
22,5
0
G29
S29
0
25,5
0
28,5
28,5
25,8
28,5
16,5
19,5
23,5
26,5
28,5
28,5
25,5
22,5
PFC-3
PFC-3
PFC+
PFC+
S27
2,7
9,8
9,8
20,7
20,7
16,9
16,9
20,7
23,4
22
G27
PFC-2
PFC-2
PFC-1
PFC-1
Therm1
Therm2
22
not assembled
33,5
33,5
33,5
28,5
25,5
22,5
DC-1
DC-1
G11
not assembled
43
43
43
28,5
25,5
22,5
DC-2
DC-2
G13
not assembled
52,5
52,5
52,5
0
28,5
25,5
22,5
12,2
DC-3
DC-3
G15
PFC3
Copyright Vincotech
27
26 Sep. 2021 / Revision 3
10-PG06PPA050SJ02-LH94E08T
datasheet
Pinout
24,25
PFC+
1,2
DC+Inv
T12
T14
T16
D11
G14
D13
G16
D15
D27
C27
D29
C29
D25
C25
G12
11
8
5
Ph1
9,10
PFC2
PFC3
PFC1
Ph2
Ph3
6,7
3,4
13
46
12
T27
27
T29
20
T25
17
T11
T13
T15
D12
G13
D14
G15
D16
G11
G27
S27
G29
S29
G25
S25
D47
D49
D45
37
41
45
26
21
16
DC-1
35,36
DC-2
39,40
DC-3
43,44
PFC-2
PFC-3
22,23
PFC-1
30,31
28,29
Rt
Therm1 Therm2
32 33
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
IGBT
600 V
50 A
Inverter Switch
Inverter Diode
T15, T16
D11, D12, D13, D14,
D15, D16
FWD
600 V
30 A
T25, T27, T29
D25, D27, D29
D45, D47, D49
C25, C27, C29
Rt
IGBT
FWD
650 V
650 V
650 V
630 V
30 A
30 A
10 A
PFC Switch
PFC Diode
FWD
PFC Sw. Protection Diode
Capacitor (PFC)
Thermistor
Capacitor
Thermistor
Copyright Vincotech
28
26 Sep. 2021 / Revision 3
10-PG06PPA050SJ02-LH94E08T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
New Datasheet format, module is unchanged
Update Rth of Inverter Switch
10-PG06PPA050SJ02-LH94E08T-D3-14
26 Sep. 2021
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
29
26 Sep. 2021 / Revision 3
相关型号:
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10-PG07N3A030S5-M894F96T
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00364/img/page/10-PG07N3A05_2225152_files/10-PG07N3A05_2225152_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00364/img/page/10-PG07N3A05_2225152_files/10-PG07N3A05_2225152_2.jpg)
10-PG07N3A050S5-M896F96T
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00370/img/page/10-PG07ORA16_2257120_files/10-PG07ORA16_2257120_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00370/img/page/10-PG07ORA16_2257120_files/10-PG07ORA16_2257120_2.jpg)
10-PG07ORA160RF-LJ53I88T
Low diode recovery losses;Low reverse recovery time and recovery charge;Designed for high switching frequency
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00366/img/page/10-PG126PA01_2235409_files/10-PG126PA01_2235409_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00366/img/page/10-PG126PA01_2235409_files/10-PG126PA01_2235409_2.jpg)
10-PG126PA010MR-L820F88T
Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00361/img/page/10-PG12APA01_2211880_files/10-PG12APA01_2211880_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00361/img/page/10-PG12APA01_2211880_files/10-PG12APA01_2211880_2.jpg)
10-PG12APA015SH01-PB18E08T
Highest efficiency in hard switching and resonant topologies;Lowest switching losses;Optimized for ultra-fast switching
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/10-PG12NAB00_2195241_files/10-PG12NAB00_2195241_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/10-PG12NAB00_2195241_files/10-PG12NAB00_2195241_2.jpg)
10-PG12NAB008ME-LC59F66T
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/10-PG12NAC00_2196612_files/10-PG12NAC00_2196612_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/10-PG12NAC00_2196612_files/10-PG12NAC00_2196612_2.jpg)
10-PG12NAB008MR02-LC59F36T
Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/10-PG12NAB00_2196809_files/10-PG12NAB00_2196809_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/10-PG12NAB00_2196809_files/10-PG12NAB00_2196809_2.jpg)
10-PG12NAB008MR04-LC59F46T
Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/10-PG12NAB00_2195241_files/10-PG12NAB00_2195241_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/10-PG12NAB00_2195241_files/10-PG12NAB00_2195241_2.jpg)
10-PG12NAC008ME-LC69F66T
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up
VINCOTECH
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