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10-PY074PA100SM01-L583F18Y [VINCOTECH]

High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;
10-PY074PA100SM01-L583F18Y
型号： 10-PY074PA100SM01-L583F18Y
厂家： VINCOTECH    VINCOTECH
描述：

High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
文件： 总18页 (文件大小：7778K)
中文：  中文翻译
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10-PY074PA100SM01-L583F18Y  
datasheet  
fastPACK 1  
650 V / 100 A  
Features  
flow 1 12 mm housing  
● High-efficient H-Bridge  
● Open emitter topology  
● Fast IGBT H5 + Fast Rapid 1 Diode  
● Integrated capacitors  
● Integrated thermistor  
● Low inductive 12mm housing  
Schematic  
Target applications  
● Power Supply  
● Solar Inverters  
● Welding & Cutting  
Types  
● 10-PY074PA100SM01-L583F18Y  
Copyright Vincotech  
1
09 Sep. 2021 / Revision 3  
10-PY074PA100SM01-L583F18Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
H-Bridge Switch  
VCES  
Collector-emitter voltage  
650  
80  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
300  
138  
±20  
175  
A
Ptot  
W
V
VGES  
Gate-emitter voltage  
Tjmax  
Maximum junction temperature  
°C  
H-Bridge Diode  
VRRM  
Peak repetitive reverse voltage  
650  
99  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
180  
138  
175  
A
Ptot  
W
°C  
Tjmax  
Maximum junction temperature  
Capacitor (DC)  
VMAX  
Maximum DC voltage  
630  
V
Top  
Operation Temperature  
-55 ... 125  
°C  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching  
condition  
-40…+(Tjmax - 25)  
Isolation Properties  
Isolation voltage  
Isolation voltage  
Creepage distance  
Clearance  
Visol  
Visol  
DC Test Voltage*  
AC Voltage  
tp = 2 s  
6000  
2500  
>12,7  
7,92  
V
tp = 1 min  
V
mm  
mm  
Comparative Tracking Index  
*100 % tested in production  
CTI  
≥ 200  
Copyright Vincotech  
2
09 Sep. 2021 / Revision 3  
10-PY074PA100SM01-L583F18Y  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
H-Bridge Switch  
Static  
VGE(th)  
VCEsat  
ICES  
IGES  
rg  
Gate-emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
VCE = VGE  
0,001  
100  
25  
3,3  
4
4,7  
V
25  
1,63  
1,78  
2,22(1)  
15  
0
V
125  
650  
0
25  
25  
80  
µA  
nA  
Ω
20  
240  
None  
6000  
100  
22  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 1 Mhz  
0
25  
25  
25  
Reverse transfer capacitance  
Gate charge  
15  
520  
100  
240  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,69  
K/W  
25  
43  
44  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
46  
12  
tr  
125  
150  
25  
15  
15  
Rgon = 4 Ω  
Rgoff = 4 Ω  
104  
119  
121  
7,78  
11,1  
11,73  
1,36  
1,74  
1,87  
0,426  
0,817  
0,881  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
-5/15  
350  
100  
tf  
125  
150  
25  
ns  
QrFWD=3,14 µC  
QrFWD=5,88 µC  
QrFWD=6,52 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
mWs  
mWs  
Eoff  
125  
150  
Copyright Vincotech  
3
09 Sep. 2021 / Revision 3  
10-PY074PA100SM01-L583F18Y  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
H-Bridge Diode  
Static  
25  
1,47  
1,4  
1,92(1)  
VF  
IR  
Forward voltage  
90  
125  
150  
V
1,37  
Reverse leakage current  
Thermal  
Vr = 650 V  
25  
4,8  
µA  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,69  
K/W  
25  
91,53  
113,98  
119,16  
62,09  
102,9  
111  
IRRM  
Peak recovery current  
125  
150  
25  
A
trr  
Reverse recovery time  
125  
150  
25  
ns  
3,14  
di/dt=5731 A/µs  
di/dt=5891 A/µs  
di/dt=5864 A/µs  
Qr  
Recovered charge  
-5/15  
350  
100  
125  
150  
25  
5,88  
μC  
6,52  
0,724  
1,46  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
mWs  
A/µs  
1,61  
1275  
1186  
1270  
(dirf/dt)max  
125  
150  
Copyright Vincotech  
4
09 Sep. 2021 / Revision 3  
10-PY074PA100SM01-L583F18Y  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
VGE [V]  
VGS [V]  
Min  
Max  
Capacitor (DC)  
Static  
DC bias voltage =  
0 V  
C
Capacitance  
25  
25  
200  
2,5  
nF  
%
%
Tolerance  
-10  
10  
Dissipation factor  
f = 1 kHz  
Thermistor  
Static  
R
ΔR/R  
P
Rated resistance  
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
25  
22  
kΩ  
%
R100 = 1484 Ω  
100  
-5  
5
5
mW  
mW/K  
K
d
25  
1,5  
B(25/50)  
Tol. ±1 %  
Tol. ±1 %  
3962  
4000  
B(25/100)  
B-value  
K
Vincotech Thermistor Reference  
I
(1)  
Value at chip level  
(2)  
Only valid with pre-applied Vincotech thermal interface material.  
Copyright Vincotech  
5
09 Sep. 2021 / Revision 3  
10-PY074PA100SM01-L583F18Y  
datasheet  
H-Bridge Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
300  
300  
VGE  
:
5 V  
6 V  
250  
200  
150  
100  
50  
250  
200  
150  
100  
50  
7 V  
8 V  
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
18 V  
0
0,0  
0
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
V
CE(V)  
VCE(V)  
tp  
=
tp  
=
250  
15  
μs  
250  
125  
μs  
°C  
25 °C  
Tj:  
VGE  
=
Tj =  
V
125 °C  
VGE from 5 V to 18 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
0
100  
10  
-1  
75  
50  
25  
0
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
0
1
2
3
4
5
6
7
10  
10  
tp(s)  
V
GE(V)  
tp  
=
=
250  
10  
μs  
V
D =  
tp / T  
0,689  
25 °C  
Tj:  
VCE  
125 °C  
Rth(j-s) =  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
7,95E-02  
1,86E-01  
2,94E-01  
1,03E-01  
2,63E-02  
1,67E+00  
2,17E-01  
5,38E-02  
6,67E-03  
6,74E-04  
Copyright Vincotech  
6
09 Sep. 2021 / Revision 3  
10-PY074PA100SM01-L583F18Y  
datasheet  
H-Bridge Switch Characteristics  
figure 5.  
IGBT  
Safe operating area  
IC = f(VCE  
)
1000  
100  
10  
1
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
7
09 Sep. 2021 / Revision 3  
10-PY074PA100SM01-L583F18Y  
datasheet  
H-Bridge Diode Characteristics  
figure 6.  
FWD  
figure 7.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
0
250  
200  
150  
100  
50  
10  
-1  
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
0
0,0  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,5  
1,0  
1,5  
2,0  
2,5  
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
0,689  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
6,10E-02  
1,19E-01  
3,11E-01  
1,35E-01  
6,36E-02  
3,01E+00  
3,45E-01  
7,41E-02  
1,50E-02  
2,75E-03  
Copyright Vincotech  
8
09 Sep. 2021 / Revision 3  
10-PY074PA100SM01-L583F18Y  
datasheet  
Thermistor Characteristics  
figure 8.  
Thermistor  
Typical NTC characteristic as function of temperature  
RT = f(T)  
25000  
20000  
15000  
10000  
5000  
0
20  
40  
60  
80  
100  
120  
140  
T(°C)  
Copyright Vincotech  
9
09 Sep. 2021 / Revision 3  
10-PY074PA100SM01-L583F18Y  
datasheet  
H-Bridge Switching Characteristics  
figure 9.  
IGBT  
figure 10.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(IC)  
E = f(Rg)  
3,5  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
3,5  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
Eon  
Eon  
Eon  
Eon  
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
0
25  
50  
75  
100  
125  
150  
175  
200  
IC(A)  
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
15,0  
17,5  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
-5/15  
4
V
V
Ω
Ω
125 °C  
150 °C  
350  
-5/15  
100  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Rgon  
Rgoff  
4
figure 11.  
FWD  
figure 12.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
2,00  
1,75  
1,50  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
25  
50  
75  
100  
125  
150  
175  
200  
IC(A)  
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
15,0  
17,5  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
-5/15  
4
V
V
Ω
125 °C  
150 °C  
350  
-5/15  
100  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Copyright Vincotech  
10  
09 Sep. 2021 / Revision 3  
10-PY074PA100SM01-L583F18Y  
datasheet  
H-Bridge Switching Characteristics  
figure 13.  
IGBT  
figure 14.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
0
10  
td(off)  
td(off)  
-1  
10  
td(on)  
-1  
10  
tr  
tf  
td(on)  
-2  
10  
tr  
tf  
-3  
10  
-2  
10  
0
25  
50  
75  
100  
125  
150  
175  
200  
IC(A)  
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
15,0  
17,5  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
350  
-5/15  
4
°C  
V
150  
350  
°C  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
A
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
-5/15  
100  
Ω
Ω
4
figure 15.  
FWD  
figure 16.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn off gate resistor  
trr = f(IC)  
trr = f(Rgoff)  
0,175  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
0,175  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
trr  
trr  
trr  
trr  
trr  
trr  
0
25  
50  
75  
100  
125  
150  
175  
200  
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
15,0  
17,5  
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
-5/15  
4
V
V
Ω
125 °C  
150 °C  
350  
-5/15  
100  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
11  
09 Sep. 2021 / Revision 3  
10-PY074PA100SM01-L583F18Y  
datasheet  
H-Bridge Switching Characteristics  
figure 17.  
FWD  
figure 18.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of turn off gate resistor  
Qr = f(IC)  
Qr = f(Rgoff)  
12  
10  
8
8
7
6
5
4
3
2
1
0
Qr  
Qr  
Qr  
Qr  
6
Qr  
Qr  
4
2
0
0
25  
50  
75  
100  
125  
150  
175  
200  
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
15,0  
17,5  
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
-5/15  
4
V
V
Ω
125 °C  
150 °C  
350  
-5/15  
100  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
figure 19.  
FWD  
figure 20.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of turn off gate resistor  
IRM = f(IC)  
IRM = f(Rgoff)  
150  
125  
100  
75  
150  
125  
100  
75  
IRM  
IRM  
IRM  
IRM  
IRM  
50  
50  
IRM  
25  
25  
0
0
0,0  
0
25  
50  
75  
100  
125  
150  
175  
200  
IC(A)  
2,5  
5,0  
7,5  
10,0  
12,5  
15,0  
17,5  
R
goff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
-5/15  
4
V
V
Ω
125 °C  
150 °C  
350  
-5/15  
100  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Copyright Vincotech  
12  
09 Sep. 2021 / Revision 3  
10-PY074PA100SM01-L583F18Y  
datasheet  
H-Bridge Switching Characteristics  
figure 21.  
FWD  
figure 22.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgoff)  
12000  
10000  
8000  
6000  
4000  
2000  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
dirr/dt ──────  
10000  
8000  
6000  
4000  
2000  
0
0
25  
50  
75  
100  
125  
150  
175  
200  
IC(A)  
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
15,0  
17,5  
R
goff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
-5/15  
4
V
125 °C  
150 °C  
350  
-5/15  
100  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
V
Ω
figure 23.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
225  
IC MAX  
200  
175  
150  
125  
100  
75  
50  
25  
0
0
100  
200  
300  
400  
500  
600  
700  
800  
V
CE(V)  
Tj =  
At  
150  
4
°C  
Ω
Rgon  
Rgoff  
=
=
4
Ω
Copyright Vincotech  
13  
09 Sep. 2021 / Revision 3  
10-PY074PA100SM01-L583F18Y  
datasheet  
H-Bridge Switching Definitions  
figure 24.  
IGBT  
figure 25.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
IC  
VGE  
VGE  
VCE  
tEoff  
VCE  
tEon  
figure 26.  
IGBT  
figure 27.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
Copyright Vincotech  
14  
09 Sep. 2021 / Revision 3  
10-PY074PA100SM01-L583F18Y  
datasheet  
H-Bridge Switching Definitions  
figure 28.  
FWD  
figure 29.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Qr  
IF  
IF  
fitted  
VF  
Copyright Vincotech  
15  
09 Sep. 2021 / Revision 3  
10-PY074PA100SM01-L583F18Y  
datasheet  
Ordering Code  
Version  
Ordering Code  
Without thermal paste  
10-PY074PA100SM01-L583F18Y  
10-PY074PA100SM01-L583F18Y-/7/  
10-PY074PA100SM01-L583F18Y-/3/  
With thermal paste (5,2 W/mK, PTM6000HV)  
With thermal paste (3,4 W/mK, PSX-P7)  
Marking  
Name  
Date code  
UL & VIN  
Lot  
Serial  
Text  
NN-NNNNNNNNNNNNNN-  
TTTTTTVV  
WWYY  
UL VIN  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
WWYY  
Outline  
Pin table [mm]  
Pin  
1
X
Y
Function  
DC-2  
DC-2  
DC-2  
DC-2  
G13-a  
S13  
46,3  
46,3  
43,6  
43,6  
39,2  
36,2  
33,2  
28,8  
23,8  
19,4  
16,4  
13,4  
9
2,7  
0
2
3
2,7  
0
4
5
1
6
0
7
1
G13-b  
Therm2  
Therm1  
G11-b  
S11  
8
0
9
0
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
1
0
1
G11-a  
DC-1  
DC-1  
DC-1  
DC-1  
DC+  
DC+  
DC+  
DC+  
Ph1  
2,7  
0
9
6,3  
2,7  
0
6,3  
0
6,8  
9,5  
12,2  
14,9  
28,6  
28,6  
28,6  
28,6  
28,6  
28,6  
28,6  
28,6  
28,6  
28,6  
28,6  
28,6  
28,6  
28,6  
28,6  
28,6  
14,9  
12,2  
9,5  
6,8  
0
0
0
0
2,7  
Ph1  
5,4  
Ph1  
8,1  
Ph1  
10,8  
15,25  
18,25  
21,25  
31,35  
34,35  
37,35  
41,8  
44,5  
47,2  
49,9  
52,6  
52,6  
52,6  
52,6  
52,6  
Ph1  
G12-a  
S12  
G12-b  
G14-b  
S14  
G14-a  
Ph2  
Ph2  
Ph2  
Ph2  
Ph2  
DC+  
DC+  
DC+  
DC+  
Copyright Vincotech  
16  
09 Sep. 2021 / Revision 3  
10-PY074PA100SM01-L583F18Y  
datasheet  
Pinout  
DC+  
17;18;19;20;37;38;39;40  
T12-a  
T14-a  
D11  
D13  
G12-a  
26  
G14-a  
31  
T12-b  
T14-b  
G12-b  
28  
G14-b  
29  
S12  
27  
S14  
30  
Ph1  
21;22;23;24;25  
0 2 C  
Ph2  
C10  
32;33;34;35;36  
T11-a  
T13-a  
D12  
D14  
G11-a  
12  
G13-a  
05  
T11-b  
T13-b  
G11-b  
10  
G13-b  
07  
S11  
11  
S13  
06  
Rt  
DC-1  
13;14;15;16  
DC-2  
01;02;03;04  
Therm1  
09  
Therm2  
08  
Identification  
Component  
Voltage  
Current  
Function  
Comment  
ID  
T11, T12, T13, T14  
D11, D12, D13, D14  
C10, C20  
IGBT  
FWD  
650 V  
650 V  
630 V  
100 A  
90 A  
H-Bridge Switch  
H-Bridge Diode  
Capacitor (DC)  
Thermistor  
Capacitor  
NTC  
Rt  
Copyright Vincotech  
17  
09 Sep. 2021 / Revision 3  
10-PY074PA100SM01-L583F18Y  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 100  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow 1 packages see vincotech.com website.  
Package data  
Package data for flow 1 packages see vincotech.com website.  
Vincotech thermistor reference  
See Vincotech thermistor reference table at vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
Thermal characteristics are updated  
Separated datasheet for press-fit version  
New datasheet format, module is unchanged  
10-PY074PA100SM01-L583F18Y-D3-14  
9 Sep. 2021  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
18  
09 Sep. 2021 / Revision 3  

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