10-PY07ANA100RG01-LH23L68Y

datasheet

flowANPFC 1

650 V / 100 A

Topology features

flow 1 12 mm housing

● Advanced Neutral Boost PFC

● Integrated DC capacitor

● Kelvin Emitter for improved switching performance

● Temperature sensor

Component features

● High efficiency in hard switching and resonant topologies

● High speed switching

● Low gate charge

Housing features

● Base isolation: Al₂O₃

● Convex shaped substrate for superior thermal contact

● Thermo-mechanical push-and-pull force relief

● Press-fit pin

● Reliable cold welding connection

Schematic

Extra features

● SiC Boost Diode

Target applications

● Charging Stations

Types

● 10-PY07ANA100RG01-LH23L68Y

Copyright Vincotech

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19 Apr. 2022 / Revision 1

10-PY07ANA100RG01-LH23L68Y

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Negative Neutral Point Switch

V_CES

Collector-emitter voltage

Collector current (DC current)

Repetitive peak collector current

Total power dissipation

650

81

V

A

I_C

T_j= T_jmax

T_s= 80 °C

I_CRM

t_plimited by T_jmax

T_j= T_jmax

400

132

±30

175

A

P_tot

W

V

V_GES

Gate-emitter voltage

T_jmax

Maximum junction temperature

°C

Positive Neutral Point Switch

V_CES

Collector-emitter voltage

Collector current (DC current)

Repetitive peak collector current

Total power dissipation

650

81

V

A

I_C

T_j= T_jmax

T_s= 80 °C

I_CRM

t_plimited by T_jmax

T_j= T_jmax

400

132

±30

175

A

P_tot

W

V

V_GES

Gate-emitter voltage

T_jmax

Maximum junction temperature

°C

Negative Boost Diode

V_RRM

Peak repetitive reverse voltage

650

36

V

A

I_F

Forward current (DC current)

Repetitive peak forward current

Surge (non-repetitive) forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_FRM

I_FSM

P_tot

t_plimited by T_jmax

120

64

A

Single Half Sine Wave,

t_p= 8,3 ms

T_j= 25 °C

T_s= 80 °C

A

T_j= T_jmax

W

°C

T_jmax

Maximum junction temperature

175

Copyright Vincotech

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10-PY07ANA100RG01-LH23L68Y

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Positive Boost Diode

V_RRM

Peak repetitive reverse voltage

650

36

V

A

I_F

Forward current (DC current)

Repetitive peak forward current

Surge (non-repetitive) forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_FRM

I_FSM

P_tot

t_plimited by T_jmax

120

64

A

Single Half Sine Wave,

t_p= 8,3 ms

T_j= 25 °C

T_s= 80 °C

A

T_j= T_jmax

W

°C

T_jmax

Maximum junction temperature

175

Negative Neutral Point Diode

V_RRM

Peak repetitive reverse voltage

Forward current (DC current)

Surge (non-repetitive) forward current

Surge current capability

1600

86

V

A

I_F

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

T_s= 80 °C

I_FSM

I²t

890

3960

91

A

Single Half Sine Wave,

t_p= 10 ms

A²s

W

°C

P_tot

Total power dissipation

T_j= T_jmax

T_jmax

Maximum junction temperature

150

Positive Neutral Point Diode

V_RRM

Peak repetitive reverse voltage

Forward current (DC current)

Surge (non-repetitive) forward current

Surge current capability

1600

118

V

A

I_F

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

T_s= 80 °C

I_FSM

I²t

1380

9520

122

A

Single Half Sine Wave,

t_p= 10 ms

A²s

W

°C

P_tot

Total power dissipation

T_j= T_jmax

T_jmax

Maximum junction temperature

150

Copyright Vincotech

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19 Apr. 2022 / Revision 1

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datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Positive Boost Diode Protection Diode

V_RRM

Peak repetitive reverse voltage

Forward current (DC current)

Repetitive peak forward current

Total power dissipation

650

23

V

A

I_F

T_j= T_jmax

T_s= 80 °C

I_FRM

t_plimited by T_jmax

T_j= T_jmax

40

A

P_tot

39

W

°C

T_jmax

Maximum junction temperature

175

Positive Boost Blocking Diode

V_RRM

Peak repetitive reverse voltage

Forward current (DC current)

Surge (non-repetitive) forward current

Surge current capability

1600

86

V

A

I_F

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

T_s= 80 °C

I_FSM

I²t

890

3960

91

A

Single Half Sine Wave,

t_p= 10 ms

A²s

W

°C

P_tot

Total power dissipation

T_j= T_jmax

T_jmax

Maximum junction temperature

150

Capacitor (DC)

V_MAX

Maximum DC voltage

630

V

T_op

Operation Temperature

-55 ... 125

°C

Module Properties

Thermal Properties

T_stg

T_jop

Storage temperature

-40…+125

°C

Operation temperature under switching

condition

-40…+(T_jmax- 25)

Isolation Properties

Isolation voltage

Creepage distance

Clearance

V_isol

DC Test Voltage*

AC Voltage

t_p= 2 s

6000

2500

>12,7

7.55

V

t_p= 1 min

V

mm

Comparative Tracking Index

*100 % tested in production

CTI

≥ 200

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Negative Neutral Point Switch

Static

V_GE(th)

Gate-emitter threshold voltage

5

0,066

100

25

5

6

7

V

25

1,5

1,66

1,7

1,9⁽¹⁾

V_CEsat

Collector-emitter saturation voltage

15

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

0

650

0

25

0,02

0,4

mA

µA

Ω

30

None

8400

208

C_ies

C_oes

C_res

Q_g

pF

nC

Output capacitance

f = 1 Mhz

0

30

25

Reverse transfer capacitance

Gate charge

158

15

400

100

282

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

0,72

K/W

25

68,47

59,23

56,87

36,61

36,46

36,3

t_d(on)

Turn-on delay time

Rise time

125

150

25

ns

t_r

125

150

25

R_gon= 4 Ω

R_goff= 4 Ω

198,58

229,53

238,96

28,01

44,72

48,75

0,88

t_d(off)

Turn-off delay time

Fall time

125

150

25

ns

0/15

400

65

t_f

125

150

25

ns

Q_rFWD=0,053 µC

Q_rFWD=0,052 µC

Q_rFWD=0,05 µC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

25

0,926

0,937

1,29

mWs

E_off

125

150

1,72

1,85

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Positive Neutral Point Switch

Static

V_GE(th)

Gate-emitter threshold voltage

5

0,066

100

25

5

6

7

V

25

1,5

1,66

1,7

1,9⁽¹⁾

V_CEsat

Collector-emitter saturation voltage

15

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

0

650

0

25

0,02

0,4

mA

µA

Ω

30

None

8400

208

C_ies

C_oes

C_res

Q_g

pF

nC

Output capacitance

f = 1 Mhz

0

30

25

Reverse transfer capacitance

Gate charge

158

15

400

100

282

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

0,72

K/W

25

70,62

60,61

57,85

63,16

62,45

61,92

200,34

231,49

240,73

44,92

55,92

60,45

1,11

t_d(on)

Turn-on delay time

Rise time

125

150

25

ns

t_r

125

150

25

R_gon= 4 Ω

R_goff= 4 Ω

t_d(off)

Turn-off delay time

Fall time

125

150

25

ns

0/15

400

65

t_f

125

150

25

ns

Q_rFWD=0,086 µC

Q_rFWD=0,082 µC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

25

1,18

mWs

1,21

1,5

E_off

125

150

2,01

2,16

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Negative Boost Diode

Static

25

1,39

1,53

1,62

6

1,55⁽¹⁾

600

V_F

I_R

Forward voltage

30

125

150

25

V

Reverse leakage current

V_r= 650 V

µA

150

90

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

1,48

K/W

Dynamic

25

10,24

9,48

I_RRM

Peak recovery current

125

150

25

A

9,23

8,9

t_rr

Reverse recovery time

125

150

25

9,06

ns

8,97

0,053

0,052

0,05

8,891x10^-3

8,195x10^-3

7,967x10^-3

di/dt=2561 A/µs

di/dt=2654 A/µs

di/dt=2217 A/µs

Q_r

Recovered charge

0/15

400

65

125

150

25

μC

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

25

mWs

A/µs

3321,92

2781,09

2867,81

(di_rf/dt)_max

125

150

Copyright Vincotech

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Positive Boost Diode

Static

25

1,39

1,53

1,62

6

1,55⁽¹⁾

600

V_F

I_R

Forward voltage

30

125

150

25

V

Reverse leakage current

V_r= 650 V

µA

150

90

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

1,48

K/W

Dynamic

25

5,54

5,34

I_RRM

Peak recovery current

125

150

25

A

5,54

26,26

26,67

27,05

0,086

0,082

0,021

0,019

638,68

636,5

666,84

t_rr

Reverse recovery time

125

150

25

ns

di/dt=1890 A/µs

di/dt=1493 A/µs

di/dt=1275 A/µs

Q_r

Recovered charge

0/15

400

65

125

150

25

μC

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

25

mWs

A/µs

(di_rf/dt)_max

125

150

Copyright Vincotech

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

V_GE[V]

V_GS[V]

Min

Max

Negative Neutral Point Diode

Static

25

1,06

0,99

0,97

1,5⁽¹⁾

V_F

I_R

Forward voltage

60

125

150

25

V

100

2

Reverse leakage current

Thermal

V_r= 1600 V

µA

150

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

0,77

K/W

Positive Neutral Point Diode

Static

25

1,11

1,03

1,5⁽¹⁾

V_F

I_R

Forward voltage

110

125

150

25

V

100

Reverse leakage current

Thermal

V_r= 1600 V

µA

150

2000

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

0,57

K/W

Copyright Vincotech

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

V_GE[V]

V_GS[V]

Min

Max

Positive Boost Diode Protection Diode

Static

25

1,23

1,74

1,65

1,61

1,87⁽¹⁾

0,24

V_F

I_R

Forward voltage

20

125

150

V

Reverse leakage current

Thermal

V_r= 650 V

25

µA

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

2,46

K/W

Positive Boost Blocking Diode

Static

25

1,06

0,99

0,97

1,5⁽¹⁾

V_F

I_R

Forward voltage

60

125

150

25

V

100

2

Reverse leakage current

Thermal

V_r= 1600 V

µA

150

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

0,77

K/W

Capacitor (DC)

Static

DC bias voltage =

0 V

C

Capacitance

25

100

nF

%

Tolerance

-10

10

Copyright Vincotech

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

V_GE[V]

V_GS[V]

Min

Max

Thermistor

Static

R

Δ_R/R

P

Rated resistance

Deviation of R₁₀₀

Power dissipation

Power dissipation constant

B-value

25

22

kΩ

%

R₁₀₀= 1484 Ω

100

25

-5

5

130

1,5

mW

mW/K

K

d

25

B_(25/50)

Tol. ±1 %

3962

4000

B_(25/100)

B-value

K

Vincotech Thermistor Reference

I

(1)

Value at chip level

(2)

Only valid with pre-applied Vincotech thermal interface material.

Copyright Vincotech

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datasheet

Negative Neutral Point Switch Characteristics

figure 1.

IGBT

figure 2.

IGBT

Typical output characteristics

I_C= f(V_CE

)

I_C= f(V_CE)

300

V_GE

:

7 V

8 V

250

200

150

100

50

250

200

150

100

50

9 V

10 V

11 V

12 V

13 V

14 V

15 V

16 V

17 V

0

0,0

0

0,0

0,5

1,0

1,5

2,0

2,5

3,0

0,5

1,0

1,5

2,0

2,5

3,0

V

_CE(V)

V_CE(V)

t_p

=

t_p

=

250

15

μs

V

250

150

μs

°C

25 °C

V_GE

=

T_j=

125 °C

150 °C

T_j:

V_GEfrom 7 V to 17 V in steps of 1 V

figure 3.

IGBT

figure 4.

IGBT

Typical transfer characteristics

Transient thermal impedance as a function of pulse width

I_C= f(V_GE

)

Z_th(j-s)= f(t_p)

0

100

10

-1

75

50

25

0

10

-2

10

0,5

0,2

0,1

-3

10

0,05

0,02

0,01

0,005

0

-4

10

-5

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

0

2

4

6

8

10

t_p(s)

V

_GE(V)

t_p

=

250

10

μs

V

D =

t_p/ T

0,72

25 °C

V_CE

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

IGBT thermal model values

R (K/W)

τ (s)

6,28E-02

9,58E-02

3,57E-01

1,45E-01

6,02E-02

2,57E+00

5,54E-01

1,08E-01

2,46E-02

3,37E-03

Copyright Vincotech

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datasheet

Negative Neutral Point Switch Characteristics

figure 5.

IGBT

Safe operating area

I_C= f(V_CE

)

1000

100

10

1

0,1

0,01

1

10

100

1000

10000

V

_CE(V)

D =

single pulse

T_s=

80

15

°C

V

V_GE

=

T_j=

T_jmax

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Positive Neutral Point Switch Characteristics

figure 6.

IGBT

figure 7.

IGBT

Typical output characteristics

I_C= f(V_CE

)

I_C= f(V_CE)

300

V_GE

:

7 V

8 V

250

200

150

100

50

250

200

150

100

50

9 V

10 V

11 V

12 V

13 V

14 V

15 V

16 V

17 V

0

0,0

0

0,0

0,5

1,0

1,5

2,0

2,5

3,0

0,5

1,0

1,5

2,0

2,5

3,0

V

_CE(V)

V_CE(V)

t_p

=

t_p

=

250

15

μs

V

250

150

μs

°C

25 °C

V_GE

=

T_j=

125 °C

150 °C

T_j:

V_GEfrom 7 V to 17 V in steps of 1 V

figure 8.

IGBT

figure 9.

IGBT

Typical transfer characteristics

Transient thermal impedance as a function of pulse width

I_C= f(V_GE

)

Z_th(j-s)= f(t_p)

0

100

10

-1

75

50

25

0

10

-2

10

0,5

0,2

0,1

-3

10

0,05

0,02

0,01

0,005

0

-4

10

-5

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

0

2

4

6

8

10

t_p(s)

V

_GE(V)

t_p

=

250

10

μs

V

D =

t_p/ T

0,72

25 °C

V_CE

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

IGBT thermal model values

R (K/W)

τ (s)

6,28E-02

9,58E-02

3,57E-01

1,45E-01

6,02E-02

2,57E+00

5,54E-01

1,08E-01

2,46E-02

3,37E-03

Copyright Vincotech

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datasheet

Positive Neutral Point Switch Characteristics

figure 10.

IGBT

Safe operating area

I_C= f(V_CE

)

1000

100

10

1

0,1

0,01

1

10

100

1000

10000

V

_CE(V)

D =

single pulse

T_s=

80

15

°C

V

V_GE

=

T_j=

T_jmax

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datasheet

Negative Boost Diode Characteristics

figure 11.

FWD

figure 12.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

1

80

60

40

20

0

10

0

10

-1

10

0,5

0,2

0,1

-2

10

0,05

0,02

0,01

0,005

0

-3

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

4,0

10

t_p(s)

V_F(V)

t_p

=

250

μs

D =

t_p/ T

1,485

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

FWD thermal model values

R (K/W)

τ (s)

6,45E-02

2,63E-01

8,47E-01

2,23E-01

8,76E-02

1,95E+00

2,25E-01

5,10E-02

4,17E-03

5,85E-04

Copyright Vincotech

16

19 Apr. 2022 / Revision 1

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datasheet

Positive Boost Diode Characteristics

figure 13.

FWD

figure 14.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

1

80

60

40

20

0

10

0

10

-1

10

0,5

0,2

0,1

-2

10

0,05

0,02

0,01

0,005

0

-3

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

4,0

10

t_p(s)

V_F(V)

t_p

=

250

μs

D =

t_p/ T

1,485

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

FWD thermal model values

R (K/W)

τ (s)

6,45E-02

2,63E-01

8,47E-01

2,23E-01

8,76E-02

1,95E+00

2,25E-01

5,10E-02

4,17E-03

5,85E-04

Copyright Vincotech

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19 Apr. 2022 / Revision 1

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datasheet

Negative Neutral Point Diode Characteristics

figure 15.

Rectifier

figure 16.

Rectifier

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

0

175

150

125

100

75

10

-1

10

-2

10

0,5

50

0,2

-3

10

0,1

0,05

0,02

0,01

0,005

0

25

-4

0

0,00

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,25

0,50

0,75

1,00

1,25

1,50

10

V_F(V)

t_p(s)

t_p

=

250

μs

D =

t_p/ T

0,772

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

Rectifier thermal model values

R (K/W)

τ (s)

2,82E-02

1,16E-01

4,16E-01

1,62E-01

5,02E-02

8,69E+00

1,22E+00

1,44E-01

2,97E-02

2,64E-03

Copyright Vincotech

18

19 Apr. 2022 / Revision 1

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datasheet

Positive Neutral Point Diode Characteristics

figure 17.

Rectifier

figure 18.

Rectifier

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

0

300

250

200

150

100

50

10

-1

10

-2

10

0,5

0,2

-3

10

0,1

0,05

0,02

0,01

0,005

0

-4

0

0,00

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,25

0,50

μs

0,75

1,00

1,25

1,50

1,75

V_F(V)

10

t_p(s)

t_p

=

250

D =

t_p/ T

0,572

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

Rectifier thermal model values

R (K/W)

τ (s)

1,96E-02

9,85E-02

3,15E-01

1,04E-01

3,57E-02

1,44E+01

1,51E+00

1,85E-01

3,37E-02

2,61E-03

Copyright Vincotech

19

19 Apr. 2022 / Revision 1

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datasheet

Positive Boost Diode Protection Diode Characteristics

figure 19.

FWD

figure 20.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

1

60

50

40

30

20

10

0

10

0

10

-1

10

0,5

0,2

0,1

-2

10

0,05

0,02

0,01

0,005

0

-3

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,0

0,5

1,0

1,5

2,0

2,5

3,0

10

t_p(s)

V_F(V)

t_p

=

250

μs

D =

t_p/ T

2,457

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

FWD thermal model values

R (K/W)

τ (s)

1,00E-01

3,37E-01

1,37E+00

4,51E-01

2,01E-01

2,27E+00

2,00E-01

4,58E-02

6,21E-03

7,45E-04

Copyright Vincotech

20

19 Apr. 2022 / Revision 1

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datasheet

Positive Boost Blocking Diode Characteristics

figure 21.

Rectifier

figure 22.

Rectifier

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

0

175

150

125

100

75

10

-1

10

-2

10

0,5

50

0,2

-3

10

0,1

0,05

0,02

0,01

0,005

0

25

-4

0

0,00

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,25

0,50

0,75

1,00

1,25

1,50

10

V_F(V)

t_p(s)

t_p

=

250

μs

D =

t_p/ T

0,772

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

Rectifier thermal model values

R (K/W)

τ (s)

2,82E-02

1,16E-01

4,16E-01

1,62E-01

5,02E-02

8,69E+00

1,22E+00

1,44E-01

2,97E-02

2,64E-03

Copyright Vincotech

21

19 Apr. 2022 / Revision 1

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datasheet

Thermistor Characteristics

figure 23.

Thermistor

Typical NTC characteristic as function of temperature

R_T= f(T)

25000

20000

15000

10000

5000

0

20

40

60

80

100

120

140

T(°C)

Copyright Vincotech

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datasheet

Negative Neutral Point Switching Characteristics

figure 24.

IGBT

figure 25.

IGBT

Typical switching energy losses as a function of collector current

Typical switching energy losses as a function of IGBT turn on gate resistor

E = f(I_C)

E = f(R_g)

3,5

3,0

2,5

2,0

1,5

1,0

0,5

0,0

3,0

2,5

2,0

1,5

1,0

0,5

0,0

E_off

E_on

E_off

E_on

0

25

50

75

100

125

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

I_C(A)

R_g(Ω)

With an inductive load at

25 °C

V_CE

V_GE

=

V_CE

V_GE

I_C

=

400

0/15

4

V

Ω

125 °C

150 °C

400

0/15

65

V

125 °C

150 °C

T_j:

V

A

R_gon

R_goff

4

figure 26.

FWD

figure 27.

FWD

Typical reverse recovered energy loss as a function of collector current

Typical reverse recovered energy loss as a function of IGBT turn on gate resistor

E_rec= f(I_C)

E_rec= f(R_g)

0,0150

0,0125

0,0100

0,0075

0,0050

0,0025

0,0000

0,040

0,035

0,030

0,025

0,020

0,015

0,010

0,005

0,000

E_rec

0

25

50

75

100

125

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

I_C(A)

R_g(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

400

0/15

4

V

Ω

125 °C

150 °C

400

0/15

65

V

A

125 °C

150 °C

T_j:

Copyright Vincotech

23

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datasheet

Negative Neutral Point Switching Characteristics

figure 28.

IGBT

figure 29.

IGBT

Typical switching times as a function of collector current

Typical switching times as a function of IGBT turn on gate resistor

t = f(I_C)

t = f(R_g)

0

10

0

10

t_d(off)

t_d(on)

-1

10

-1

t_r

10

t_d(on)

t_r

t_f

-2

10

-2

10

0

25

50

75

100

125

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

R_g(Ω)

I_C(A)

With an inductive load at

T_j=

150

400

0/15

4

°C

V

150

400

0/15

65

°C

V_CE

=

V_CE

=

V

A

V_GE

R_gon

R_goff

V_GE

I_C

V

Ω

4

figure 30.

FWD

figure 31.

FWD

Typical reverse recovery time as a function of collector current

Typical reverse recovery time as a function of IGBT turn on gate resistor

t_rr= f(I_C)

t_rr= f(R_gon)

0,0150

0,0125

0,0100

0,0075

0,0050

0,0025

0,0000

0,0150

0,0125

0,0100

0,0075

0,0050

0,0025

0,0000

t_rr

0

25

50

75

100

125

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

400

0/15

4

V

Ω

125 °C

150 °C

400

0/15

65

V

A

125 °C

150 °C

T_j:

Copyright Vincotech

24

19 Apr. 2022 / Revision 1

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datasheet

Negative Neutral Point Switching Characteristics

figure 32.

FWD

figure 33.

FWD

Typical recovered charge as a function of collector current

Typical recovered charge as a function of IGBT turn on gate resistor

Q_r= f(I_C)

Q_r= f(R_gon)

0,08

0,07

0,06

0,05

0,04

0,03

0,02

0,01

0,00

0,12

0,10

0,08

0,06

0,04

0,02

0,00

Q_r

0

25

50

75

100

125

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

400

0/15

4

V

Ω

125 °C

150 °C

400

0/15

65

V

125 °C

150 °C

T_j:

V

A

figure 34.

FWD

figure 35.

FWD

Typical peak reverse recovery current as a function of collector current

Typical peak reverse recovery current as a function of IGBT turn on gate resistor

I_RM= f(I_C)

I_RM= f(R_gon)

15,0

12,5

10,0

7,5

22,5

20,0

17,5

15,0

12,5

10,0

7,5

I_RM

5,0

I_RM

5,0

2,5

0,0

0

25

50

75

100

125

2,5

5,0

7,5

10,0

12,5

15,0

17,5

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

400

0/15

4

V

Ω

125 °C

150 °C

400

0/15

65

V

125 °C

150 °C

T_j:

V

A

Copyright Vincotech

25

19 Apr. 2022 / Revision 1

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datasheet

Negative Neutral Point Switching Characteristics

figure 36.

FWD

figure 37.

FWD

Typical rate of fall of forward and reverse recovery current as a function of collector current

Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor

di_F/dt, di_rr/dt = f(I_C)

di_F/dt, di_rr/dt = f(R_gon)

7000

10000

8000

6000

4000

2000

0

di_F/dt ‒ ‒ ‒ ‒ ‒

di_rr/dt ──────

6000

5000

4000

3000

2000

1000

0

25

50

75

100

125

I_C(A)

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

R

_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

400

0/15

4

V

Ω

125 °C

150 °C

400

0/15

65

V

A

125 °C

150 °C

T_j:

figure 38.

IGBT

Reverse bias safe operating area

I_C= f(V_CE

)

225

I_{C MAX}

200

175

150

125

100

75

50

25

0

100

200

300

400

500

600

700

800

V

_CE(V)

T_j=

At

150

4

°C

Ω

R_gon

R_goff

=

4

Ω

Copyright Vincotech

26

19 Apr. 2022 / Revision 1

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datasheet

Positive Neutral Point Switching Characteristics

figure 39.

IGBT

figure 40.

IGBT

Typical switching energy losses as a function of collector current

Typical switching energy losses as a function of IGBT turn on gate resistor

E = f(I_C)

E = f(R_g)

5

4

3

2

1

0

4,0

3,5

3,0

2,5

2,0

1,5

1,0

0,5

0,0

E_off

E_on

0

25

50

75

100

125

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

I_C(A)

R_g(Ω)

With an inductive load at

25 °C

V_CE

V_GE

=

V_CE

V_GE

I_C

=

400

0/15

4

V

Ω

125 °C

150 °C

400

0/15

65

V

125 °C

150 °C

T_j:

V

A

R_gon

R_goff

4

figure 41.

FWD

figure 42.

FWD

Typical reverse recovered energy loss as a function of collector current

Typical reverse recovered energy loss as a function of IGBT turn on gate resistor

E_rec= f(I_C)

E_rec= f(R_g)

0,025

0,020

0,015

0,010

0,005

0,000

0,030

0,025

0,020

0,015

0,010

0,005

0,000

E_rec

0

25

50

75

100

125

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

I_C(A)

R_g(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

400

0/15

4

V

Ω

125 °C

150 °C

400

0/15

65

V

A

125 °C

150 °C

T_j:

Copyright Vincotech

27

19 Apr. 2022 / Revision 1

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datasheet

Positive Neutral Point Switching Characteristics

figure 43.

IGBT

figure 44.

IGBT

Typical switching times as a function of collector current

Typical switching times as a function of IGBT turn on gate resistor

t = f(I_C)

t = f(R_g)

0

10

0

10

t_d(off)

t_d(on)

t_r

-1

10

-1

10

t_r

t_f

t_d(on)

-2

10

-2

10

0

25

50

75

100

125

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

R_g(Ω)

I_C(A)

With an inductive load at

T_j=

150

400

0/15

4

°C

V

150

400

0/15

65

°C

V_CE

=

V_CE

=

V

A

V_GE

R_gon

R_goff

V_GE

I_C

V

Ω

4

figure 45.

FWD

figure 46.

FWD

Typical reverse recovery time as a function of collector current

Typical reverse recovery time as a function of IGBT turn on gate resistor

t_rr= f(I_C)

t_rr= f(R_gon)

0,06

0,05

0,04

0,03

0,02

0,01

0,00

0,06

0,05

0,04

0,03

0,02

0,01

0,00

t_rr

0

25

50

75

100

125

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

400

0/15

4

V

Ω

125 °C

150 °C

400

0/15

65

V

125 °C

150 °C

T_j:

V

A

Copyright Vincotech

28

19 Apr. 2022 / Revision 1

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datasheet

Positive Neutral Point Switching Characteristics

figure 47.

FWD

figure 48.

FWD

Typical recovered charge as a function of collector current

Typical recovered charge as a function of IGBT turn on gate resistor

Q_r= f(I_C)

Q_r= f(R_gon)

0,12

0,10

0,08

0,06

0,04

0,02

0,00

0,12

0,10

0,08

0,06

0,04

0,02

0,00

Q_r

0

25

50

75

100

125

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

400

0/15

4

V

Ω

125 °C

150 °C

400

0/15

65

V

125 °C

150 °C

T_j:

V

A

figure 49.

FWD

figure 50.

FWD

Typical peak reverse recovery current as a function of collector current

Typical peak reverse recovery current as a function of IGBT turn on gate resistor

I_RM= f(I_C)

I_RM= f(R_gon)

7

6

5

4

3

2

1

0

10

I_RM

8

6

4

I_RM

2

0

0,0

0

25

50

75

100

125

2,5

5,0

7,5

10,0

12,5

15,0

17,5

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

400

0/15

4

V

Ω

125 °C

150 °C

400

0/15

65

V

125 °C

150 °C

T_j:

V

A

Copyright Vincotech

29

19 Apr. 2022 / Revision 1

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datasheet

Positive Neutral Point Switching Characteristics

figure 51.

FWD

figure 52.

FWD

Typical rate of fall of forward and reverse recovery current as a function of collector current

Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor

di_F/dt, di_rr/dt = f(I_C)

di_F/dt, di_rr/dt = f(R_gon)

3000

3500

3000

2500

2000

1500

1000

500

di_F/dt ‒ ‒ ‒ ‒ ‒

di_rr/dt ──────

2500

2000

1500

1000

500

0

25

50

75

100

125

I_C(A)

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

R

_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

400

0/15

4

V

Ω

125 °C

150 °C

400

0/15

65

V

A

125 °C

150 °C

T_j:

figure 53.

IGBT

Reverse bias safe operating area

I_C= f(V_CE

)

225

I_{C MAX}

200

175

150

125

100

75

50

25

0

100

200

300

400

500

600

700

800

V

_CE(V)

T_j=

At

150

4

°C

Ω

R_gon

R_goff

=

4

Ω

Copyright Vincotech

30

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datasheet

Switching Definitions

figure 54.

IGBT

figure 55.

IGBT

Turn-off Switching Waveforms & definition of t_doff, t_Eoff(t_tEoff= integrating time for E_off

)

Turn-on Switching Waveforms & definition of t_don, t_Eon(t_Eon= integrating time for E_on)

t_doff

%

V_{GE 90%}

V_{CE 90%}

I_C

V_GE

V_CE

t_don

t_Eoff

I_{C 1%}

V_{CE 3%}

V_CE

I_{C 10%}

V_{GE 10%}

t_Eon

t (µs)

figure 56.

IGBT

figure 57.

IGBT

Turn-off Switching Waveforms & definition of t_f

Turn-on Switching Waveforms & definition of t_r

fitted

%

I_C

I_{C 90%}

I_{C 60%}

V_CE

I_{C 90%}

I_{C 40%}

t_r

I_C10%

V_CE

C 10%

t_f

t (µs)

Copyright Vincotech

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19 Apr. 2022 / Revision 1

10-PY07ANA100RG01-LH23L68Y

datasheet

Switching Definitions

figure 58.

FWD

figure 59.

FWD

Turn-off Switching Waveforms & definition of t_rr

Turn-on Switching Waveforms & definition of t_Qr(t_Qr= integrating time for Q_r)

%

Q_r

t_rr

t_Qr

I_F

fitted

RRM 10%

V_F

RRM 90%

RRM 100%

t (µs)

Copyright Vincotech

32

19 Apr. 2022 / Revision 1

10-PY07ANA100RG01-LH23L68Y

datasheet

Ordering Code

Version

Ordering Code

Without thermal paste

10-PY07ANA100RG01-LH23L68Y

10-PY07ANA100RG01-LH23L68Y-/7/

10-PY07ANA100RG01-LH23L68Y-/3/

With thermal paste (5,2 W/mK, PTM6000HV)

With thermal paste (3,4 W/mK, PSX-P7)

Marking

Name

Date code

UL & VIN

Lot

Serial

Text

NN-NNNNNNNNNNNNNN-

TTTTTTVV

WWYY

UL VIN

LLLLL

SSSS

Type&Ver

Lot number

Serial

Date code

Datamatrix

TTTTTTTVV

LLLLL

SSSS

WWYY

Outline

Pin table [mm]

1

X

Y

6,6

3,6

0

Function

S1

24,4

3

2

G1

3

Therm2

Therm1

TM41

DC-

4

0

5

26,5

8,6

11,6

20

17,75

26

29

26

29

26

29

26

29

26

29

26

29

12

15

12

15

12

15

6

7

DC-

8

DC-

9

DC-

10

11

12

13

14

15

16

17

18

19

20

21

22

23

GND

DC+

Ph

20

23

31,4

34,4

47

Ph

50

Ph

50

Ph

53

Ph

53

Ph

Copyright Vincotech

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19 Apr. 2022 / Revision 1

10-PY07ANA100RG01-LH23L68Y

datasheet

Pinout

DC+

14-17

D14

D42

C20

5

TM41

D41

D44

D43

Ph

GND

10-12

18-23

T14

T13

2

G1

1

S1

C10

D13

Rt

4

6-9

DC-

3

Therm2

Therm1

Identification

Component

Voltage

Current

Function

Comment

ID

T13

T14

D13

D14

D43

D44

IGBT

650 V

1600 V

100 A

30 A

Negative Neutral Point Switch

Positive Neutral Point Switch

Negative Boost Diode

FWD

30 A

Positive Boost Diode

Rectifier

60 A

Negative Neutral Point Diode

Positive Neutral Point Diode

110 A

Positive Boost Diode Protection

Diode

D42

FWD

650 V

20 A

60 A

D41

C10, C20

Rt

Rectifier

Capacitor

Thermistor

1600 V

630 V

Positive Boost Blocking Diode

Capacitor (DC)

Thermistor

Copyright Vincotech

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19 Apr. 2022 / Revision 1

10-PY07ANA100RG01-LH23L68Y

datasheet

Packaging instruction

Handling instruction

Standard packaging quantity (SPQ) 100

>SPQ

Standard

<SPQ

Sample

Handling instructions for flow 1 packages see vincotech.com website.

Package data

Package data for flow 1 packages see vincotech.com website.

Vincotech thermistor reference

See Vincotech thermistor reference table at vincotech.com website.

UL recognition and file number

This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.

Document No.:

Date:

Modification:

Pages

10-PY07ANA100RG01-LH23L68Y-D1-14

19 Apr. 2022

DISCLAIMER

The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to

reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations

that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,

function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said

information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons

or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine

the suitability of the information and the product for reader’s intended use.

LIFE SUPPORT POLICY

Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval

of Vincotech.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or

sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be

reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause

the failure of the life support device or system, or to affect its safety or effectiveness.

Copyright Vincotech

35

19 Apr. 2022 / Revision 1


型号：	10-PY07ANA100RG01-LH23L68Y
厂家：	VINCOTECH
描述：	High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
文件：	总35页 (文件大小：8892K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

10-PY07ANA100RG01-LH23L68Y [VINCOTECH]

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