10-PY07BBA150S5-M735L58Y [VINCOTECH]
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage;
| 型号： | 10-PY07BBA150S5-M735L58Y |
| 厂家： | 
VINCOTECH |
| 描述： | High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage |
| 文件： | 总28页 (文件大小：9307K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-PY07BBA150S5-M735L58Y
datasheet
flowBUCK-BOOST 1
650 V / 150 A
Features
flow 1 12 mm housing
● BatteryBuck Boost
● IGBT S5 + Rapid1S
● fsw 20-50kHz
● NTC
Schematic
Target applications
● Power Supply
● UPS
Types
● 10-PY07BBA150S5-M735L58Y
Copyright Vincotech
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30 Sep. 2021 / Revision 3
10-PY07BBA150S5-M735L58Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Switch
VCES
Collector-emitter voltage
650
105
450
145
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Boost Diode
VRRM
Peak repetitive reverse voltage
650
70
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
200
95
A
Ptot
W
°C
Tjmax
Maximum junction temperature
175
Buck Switch
VCES
Collector-emitter voltage
650
48
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
150
73
A
Ptot
W
V
VGES
Gate-emitter voltage
±20
175
Tjmax
Maximum junction temperature
°C
Copyright Vincotech
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30 Sep. 2021 / Revision 3
10-PY07BBA150S5-M735L58Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Buck Diode
VRRM
Peak repetitive reverse voltage
650
41
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
80
A
Ptot
58
W
°C
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
>12,7
8,11
V
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0015
150
25
3,2
4
4,8
V
V
25
1,43
1,52
1,55
1,75(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
100
200
µA
nA
Ω
20
None
9000
260
34
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
VCC = 520 V
15
150
328
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,65
K/W
25
31
32
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
31
11
tr
125
150
25
12
12
Rgon = 2 Ω
Rgoff = 2 Ω
152
172
178
9,45
15,64
18,76
1,34
1,78
1,78
1,19
1,92
2,15
td(off)
Turn-off delay time
Fall time
125
150
25
ns
0/15
350
126
tf
125
150
25
ns
QrFWD=4,23 µC
QrFWD=7,61 µC
QrFWD=8,42 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
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10-PY07BBA150S5-M735L58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
1,61
1,58
1,57
1,92(1)
VF
IR
Forward voltage
100
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
5,3
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1
K/W
25
150,93
185,65
192,3
52,09
80,98
89,45
4,23
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=10473 A/µs
di/dt=9230 A/µs
di/dt=9328 A/µs
Qr
Recovered charge
0/15
350
126
125
150
25
7,61
μC
8,42
1,08
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
2,01
mWs
A/µs
2,23
7084
3185
3380
(dirf/dt)max
125
150
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0005
50
25
3,2
4
4,8
V
V
25
1,39
1,48
1,51
1,75(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
50
µA
nA
Ω
20
100
None
3100
88
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
12
VCC = 520 V
15
50
120
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,29
K/W
25
25,6
32
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
32
7,4
tr
125
150
25
11
10
Rgon = 8 Ω
Rgoff = 8 Ω
125,8
145
td(off)
Turn-off delay time
Fall time
125
150
25
ns
152
0/15
400
50
10,58
25,4
32,6
0,613
0,722
0,758
0,505
0,786
0,887
tf
125
150
25
ns
QrFWD=1,86 µC
QrFWD=3,21 µC
QrFWD=3,63 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
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10-PY07BBA150S5-M735L58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Diode
Static
25
1,51
1,44
1,42
1,92(1)
VF
IR
Forward voltage
40
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
2,1
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,63
K/W
25
62,04
75,39
80,48
59,3
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
87,23
96,59
1,86
ns
di/dt=6192 A/µs
di/dt=5422 A/µs
di/dt=5179 A/µs
Qr
Recovered charge
0/15
400
50
125
150
25
3,21
μC
3,63
0,461
1,08
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
1,22
1550
1357
1542
(dirf/dt)max
125
150
Copyright Vincotech
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10-PY07BBA150S5-M735L58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
400
400
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
300
200
100
0
300
200
100
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
150
10
125
100
75
50
25
0
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
1
2
3
4
5
6
7
8
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,654
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,13E-01
2,91E-01
1,38E-01
6,68E-02
1,32E-02
3,21E-02
8,46E-01
1,23E-01
3,33E-02
8,32E-03
2,63E-03
3,23E-04
Copyright Vincotech
9
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datasheet
Boost Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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datasheet
Boost Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,997
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
4,57E-02
1,09E-01
3,92E-01
3,47E-01
7,19E-02
3,26E-02
5,23E+00
8,02E-01
1,26E-01
3,68E-02
4,16E-03
5,44E-04
Copyright Vincotech
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datasheet
Buck Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
150
150
VGE
:
7 V
8 V
125
100
75
50
25
0
125
100
75
50
25
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
50
10
40
30
20
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
1
2
3
4
5
6
7
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
1,294
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
2,09E-01
6,00E-01
3,10E-01
1,08E-01
6,63E-02
5,36E-01
8,05E-02
1,69E-02
4,25E-03
5,30E-04
Copyright Vincotech
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datasheet
Buck Switch Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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datasheet
Buck Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
100
75
50
25
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,634
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,48E-02
1,35E-01
6,09E-01
4,79E-01
2,54E-01
1,02E-01
4,24E+00
6,38E-01
1,07E-01
3,28E-02
5,68E-03
6,59E-04
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datasheet
Thermistor Characteristics
figure 15.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
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datasheet
Boost Switching Characteristics
figure 16.
IGBT
figure 17.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Eon
Eoff
Eoff
Eoff
Eon
Eoff
Eon
Eon
Eon
Eoff
Eoff
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
0/15
2
V
125 °C
150 °C
350
0/15
126
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Rgon
Rgoff
Ω
Ω
2
figure 18.
FWD
figure 19.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
0/15
2
V
125 °C
150 °C
350
0/15
126
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
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datasheet
Boost Switching Characteristics
figure 20.
IGBT
figure 21.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
-1
10
td(on)
-1
10
tf
tr
-2
10
td(on)
tr
tf
-3
10
-2
10
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
0/15
2
°C
150
350
0/15
126
°C
V
VCE
=
=
=
=
VCE
=
=
=
V
V
Ω
Ω
VGE
Rgon
Rgoff
VGE
IC
V
A
2
figure 22.
FWD
figure 23.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,12
0,10
0,08
0,06
0,04
0,02
0,00
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
0/15
2
V
V
125 °C
150 °C
350
0/15
126
V
V
A
125 °C
150 °C
Tj:
Tj:
Ω
Copyright Vincotech
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30 Sep. 2021 / Revision 3
10-PY07BBA150S5-M735L58Y
datasheet
Boost Switching Characteristics
figure 24.
FWD
figure 25.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
12
10
8
12
10
8
Qr
Qr
Qr
Qr
6
6
Qr
Qr
4
4
2
2
0
0
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
0/15
2
V
125 °C
150 °C
350
0/15
126
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
figure 26.
FWD
figure 27.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
250
200
150
100
50
250
200
150
100
50
IRM
IRM
IRM
IRM
IRM
IRM
0
0
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
0/15
2
V
V
125 °C
150 °C
350
0/15
126
V
V
A
125 °C
150 °C
Tj:
Tj:
Ω
Copyright Vincotech
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30 Sep. 2021 / Revision 3
10-PY07BBA150S5-M735L58Y
datasheet
Boost Switching Characteristics
figure 28.
FWD
figure 29.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
15000
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
12500
10000
7500
5000
2500
0
0
25
50
75
100
125
150
175
IC(A)
0
1
2
3
4
5
6
7
8
9
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
0/15
2
V
V
Ω
125 °C
150 °C
350
0/15
126
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 30.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
350
IC MAX
300
250
200
150
100
50
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
2
°C
Ω
Rgon
Rgoff
=
=
2
Ω
Copyright Vincotech
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30 Sep. 2021 / Revision 3
10-PY07BBA150S5-M735L58Y
datasheet
Buck Switching Characteristics
figure 31.
IGBT
figure 32.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Eon
Eoff
Eon
Eoff
Eon
Eon
Eon
Eoff
Eoff
Eon
Eoff
Eoff
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
Ω
125 °C
150 °C
400
0/15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
8
figure 33.
FWD
figure 34.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
150 °C
400
0/15
50
V
V
A
125 °C
150 °C
Tj:
Copyright Vincotech
20
30 Sep. 2021 / Revision 3
10-PY07BBA150S5-M735L58Y
datasheet
Buck Switching Characteristics
figure 35.
IGBT
figure 36.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
-1
10
-1
10
td(on)
td(on)
tf
tf
tr
tr
-2
10
-2
10
-3
10
-3
10
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
400
0/15
8
°C
V
150
400
0/15
50
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 37.
FWD
figure 38.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
21
30 Sep. 2021 / Revision 3
10-PY07BBA150S5-M735L58Y
datasheet
Buck Switching Characteristics
figure 39.
FWD
figure 40.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
6
5
4
3
2
1
0
4,5
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 41.
FWD
figure 42.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
100
80
60
40
20
0
125
100
75
50
25
0
IRM
IRM
IRM
IRM
IRM
IRM
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
22
30 Sep. 2021 / Revision 3
10-PY07BBA150S5-M735L58Y
datasheet
Buck Switching Characteristics
figure 43.
FWD
figure 44.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
8000
8000
7000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
7000
6000
5000
4000
3000
2000
1000
0
dirr/dt ──────
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 45.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
120
IC MAX
100
80
60
40
20
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
8
°C
Ω
Rgon
Rgoff
=
=
8
Ω
Copyright Vincotech
23
30 Sep. 2021 / Revision 3
10-PY07BBA150S5-M735L58Y
datasheet
Switching Definitions
figure 46.
IGBT
figure 47.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
24
30 Sep. 2021 / Revision 3
10-PY07BBA150S5-M735L58Y
datasheet
Switching Definitions
figure 50.
FWD
figure 51.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
25
30 Sep. 2021 / Revision 3
10-PY07BBA150S5-M735L58Y
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-PY07BBA150S5-M735L58Y
10-PY07BBA150S5-M735L58Y-/7/
10-PY07BBA150S5-M735L58Y-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
Function
DC-Boost
DC-Boost
DC-Boost
DC-Boost
G12
53,1
53,1
50,4
50,4
47,4
47,4
5,7
5,7
2,7
2,7
0
2
3
3
0
4
3
5
0
6
3
S12
7
0
G14
8
3
S14
9
0
Boost-
Boost-
Boost-
Boost-
Therm2
Therm1
Boost+
Boost+
Boost+
Boost+
S11
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
3
0
0
3
0,4
0,4
0
12,95
15,95
25,9
28,9
25,9
28,9
25,9
28,9
25,9
28,9
25,9
28,9
12,95
15,95
12,95
15,95
12,95
15,95
0
2,7
2,7
5,7
5,7
50,4
50,4
53,1
53,1
47
G11
DC+Boost
DC+Boost
DC+Boost
DC+Boost
G13
47
S13
50
N1
50
N1
52,7
52,7
N1
N1
Copyright Vincotech
26
30 Sep. 2021 / Revision 3
10-PY07BBA150S5-M735L58Y
datasheet
Pinout
DC+Boost
21,22,23,24
T11
D13
D11
G11 20
S11 19
Boost+
15,16,17,18
T13
G13 25
S13 26
N1
27,28,29,30
T14
D12
D14
G14
S14
7
8
Boost-
9,10,11,12
T12
Rt
G12
S12
5
6
Therm1
14
Therm2
13
DC-Boost
1,2,3,4
Identification
Component
Voltage
Current
Function
Comment
ID
T13, T14
D13, D14
T11, T12
D11, D12
Rt
IGBT
FWD
IGBT
FWD
NTC
650 V
650 V
650 V
650 V
150 A
100 A
50 A
Boost Switch
Boost Diode
Buck Switch
Buck Diode
Thermistor
40 A
Copyright Vincotech
27
30 Sep. 2021 / Revision 3
10-PY07BBA150S5-M735L58Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PY07BBA150S5-M735L58Y-D3-14
30 Sep. 2021
Change of Buck diode Rth value
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
28
30 Sep. 2021 / Revision 3
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