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10-PY07BVA030RW-LF42E28Y [VINCOTECH]

High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;
10-PY07BVA030RW-LF42E28Y
型号： 10-PY07BVA030RW-LF42E28Y
厂家： VINCOTECH    VINCOTECH
描述：

High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
文件： 总50页 (文件大小：12211K)
中文：  中文翻译
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10-PY07BVA030RW-LF42E28Y  
datasheet  
flowSOL 1 BI (TL)  
650 V / 30 A  
Topology features  
flow 1 12 mm housing  
● Kelvin Emitter for improved switching performance  
● Temperature sensor  
● Booster + H6.5  
Component features  
● High efficiency in hard switching and resonant topologies  
● High speed switching  
● Low gate charge  
Housing features  
● Base isolation: Al2O3  
● Convex shaped substrate for superior thermal contact  
● Thermo-mechanical push-and-pull force relief  
● Press-fit pin  
Schematic  
● Reliable cold welding connection  
Target applications  
● Solar Inverters  
Types  
● 10-PY07BVA030RW-LF42E28Y  
Copyright Vincotech  
1
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Low Buck Switch  
VCES  
Collector-emitter voltage  
650  
36  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
120  
63  
A
Ptot  
W
V
VGES  
Gate-emitter voltage  
±30  
175  
Tjmax  
Maximum junction temperature  
°C  
High Buck Switch  
VCES  
Collector-emitter voltage  
650  
36  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
120  
63  
A
Ptot  
W
V
VGES  
Gate-emitter voltage  
±30  
175  
Tjmax  
Maximum junction temperature  
°C  
Buck Diode  
VRRM  
Peak repetitive reverse voltage  
650  
29  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
40  
A
Ptot  
51  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Copyright Vincotech  
2
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Boost Switch  
VCES  
Collector-emitter voltage  
650  
28  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Turn off safe operating area  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
ICRM  
tp limited by Tjmax  
Tj = 150°C, VCE = 1200 V  
Tj = Tjmax  
60  
A
60  
A
Ptot  
VGES  
tSC  
Ts = 80 °C  
59  
W
V
Gate-emitter voltage  
±20  
6
Short circuit ratings  
VGE = 15 V, VCC = 360 V  
Tj = 150 °C  
µs  
°C  
Tjmax  
Maximum junction temperature  
175  
Low Boost Diode  
VRRM  
Peak repetitive reverse voltage  
650  
29  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
40  
A
Ptot  
51  
W
°C  
Tjmax  
Maximum junction temperature  
175  
High Boost Diode  
VRRM  
Peak repetitive reverse voltage  
650  
29  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
40  
A
Ptot  
51  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Copyright Vincotech  
3
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Input Boost Switch  
VCES  
Collector-emitter voltage  
650  
36  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
120  
63  
A
Ptot  
W
V
VGES  
Gate-emitter voltage  
±30  
175  
Tjmax  
Maximum junction temperature  
°C  
Input Boost Diode  
VRRM  
Peak repetitive reverse voltage  
650  
34  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
60  
A
Ptot  
50  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Input Boost Sw. Protection Diode  
VRRM  
Peak repetitive reverse voltage  
Forward current (DC current)  
Repetitive peak forward current  
Total power dissipation  
650  
17  
V
A
IF  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
20  
A
Ptot  
33  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Copyright Vincotech  
4
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
ByPass Diode  
VRRM  
Peak repetitive reverse voltage  
1600  
46  
V
A
IF  
Forward current (DC current)  
Surge (non-repetitive) forward current  
Surge current capability  
Tj = Tjmax  
Ts = 80 °C  
Tj = 150 °C  
Ts = 80 °C  
IFSM  
I2t  
270  
370  
56  
A
Single Half Sine Wave,  
tp = 10 ms  
A2s  
W
°C  
Ptot  
Total power dissipation  
Tj = Tjmax  
Tjmax  
Maximum junction temperature  
150  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching  
condition  
-40…+(Tjmax - 25)  
Isolation Properties  
Isolation voltage  
Isolation voltage  
Creepage distance  
Clearance  
Visol  
Visol  
DC Test Voltage*  
AC Voltage  
tp = 2 s  
6000  
2500  
>12,7  
7,93  
V
tp = 1 min  
V
mm  
mm  
Comparative Tracking Index  
*100 % tested in production  
CTI  
≥ 200  
Copyright Vincotech  
5
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Low Buck Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
5
0,02  
30  
25  
5
6
7
V
V
25  
1,44  
1,61  
1,64  
1,9(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
0,01  
0,2  
mA  
µA  
Ω
30  
None  
2530  
65  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 1 Mhz  
0
30  
25  
25  
Reverse transfer capacitance  
Gate charge  
46  
15  
400  
30  
84  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
1,5  
K/W  
25  
42  
43  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
43  
7
tr  
125  
150  
25  
7
7
Rgon = 8 Ω  
Rgoff = 8 Ω  
59  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
67  
ns  
68  
±15  
350  
30  
21,64  
36,5  
52,33  
0,374  
0,471  
0,495  
0,256  
0,387  
0,441  
tf  
125  
150  
25  
ns  
QrFWD=2,03 µC  
QrFWD=2,74 µC  
QrFWD=2,99 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
mWs  
mWs  
Eoff  
125  
150  
Copyright Vincotech  
6
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
High Buck Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
5
0,02  
30  
25  
5
6
7
V
V
25  
1,44  
1,61  
1,64  
1,9(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
0,01  
0,2  
mA  
µA  
Ω
30  
None  
2530  
65  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 1 Mhz  
0
30  
25  
25  
Reverse transfer capacitance  
Gate charge  
46  
15  
400  
30  
84  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
1,5  
K/W  
Dynamic  
25  
42  
43  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
43  
7
tr  
125  
150  
25  
7
7
Rgon = 8 Ω  
Rgoff = 8 Ω  
59  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
67  
ns  
68  
±15  
350  
30  
21,64  
36,5  
52,33  
0,374  
0,471  
0,495  
0,256  
0,387  
0,441  
tf  
125  
150  
25  
ns  
QrFWD=2,03 µC  
QrFWD=2,74 µC  
QrFWD=2,99 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
mWs  
mWs  
Eoff  
125  
150  
Copyright Vincotech  
7
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Buck Diode  
Static  
25  
1,56  
1,51  
1,51  
1,92(1)  
1,28  
VF  
IR  
Forward voltage  
20  
125  
150  
V
Reverse leakage current  
Thermal  
Vr = 650 V  
25  
µA  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
1,88  
K/W  
25  
69,9  
76,16  
78,25  
50,69  
90,9  
IRRM  
Peak recovery current  
125  
150  
25  
A
trr  
Reverse recovery time  
125  
150  
25  
ns  
93,49  
2,03  
di/dt=6385 A/µs  
di/dt=6312 A/µs  
di/dt=6023 A/µs  
Qr  
Recovered charge  
±15  
350  
30  
125  
150  
25  
2,74  
μC  
2,99  
0,532  
0,69  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
mWs  
A/µs  
0,751  
5003  
5228  
5263  
(dirf/dt)max  
125  
150  
Copyright Vincotech  
8
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Boost Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VCE = VGE  
0,00029 25  
25  
5,1  
5,8  
6,4  
V
V
1,03  
1,5  
1,87(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
20  
125  
1,68  
1,71  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
1
µA  
nA  
Ω
20  
25  
150  
None  
1100  
71  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 1 Mhz  
0
25  
25  
25  
Reverse transfer capacitance  
Gate charge  
32  
VCC = 480 V  
15  
20  
120  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
1,6  
K/W  
25  
62  
61  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
61  
22  
tr  
125  
150  
25  
21  
20  
Rgon = 16 Ω  
Rgoff = 16 Ω  
131  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
150  
ns  
154  
±15  
350  
20  
72,1  
105,2  
114,85  
0,524  
0,705  
0,765  
0,431  
0,607  
0,643  
tf  
125  
150  
25  
ns  
QrFWD=0,614 µC  
QrFWD=1,2 µC  
QrFWD=1,38 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
mWs  
mWs  
Eoff  
125  
150  
Copyright Vincotech  
9
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Low Boost Diode  
Static  
25  
1,56  
1,51  
1,51  
1,92(1)  
1,28  
VF  
IR  
Forward voltage  
20  
125  
150  
V
Reverse leakage current  
Thermal  
Vr = 650 V  
25  
µA  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
1,88  
K/W  
25  
12,81  
17,01  
17,57  
71,53  
113,68  
126,68  
0,614  
1,2  
IRRM  
Peak recovery current  
125  
150  
25  
A
trr  
Reverse recovery time  
125  
150  
25  
ns  
di/dt=3350 A/µs  
di/dt=868 A/µs  
di/dt=1011 A/µs  
Qr  
Recovered charge  
±15  
350  
20  
125  
150  
25  
μC  
1,38  
0,093  
0,197  
0,234  
220,72  
183,67  
146,55  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
mWs  
A/µs  
(dirf/dt)max  
125  
150  
Copyright Vincotech  
10  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
High Boost Diode  
Static  
25  
1,56  
1,51  
1,51  
1,92(1)  
1,28  
VF  
IR  
Forward voltage  
20  
125  
150  
V
Reverse leakage current  
Thermal  
Vr = 650 V  
25  
µA  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
1,88  
K/W  
25  
12,81  
17,01  
17,57  
71,53  
113,68  
126,68  
0,614  
1,2  
IRRM  
Peak recovery current  
125  
150  
25  
A
trr  
Reverse recovery time  
125  
150  
25  
ns  
di/dt=3350 A/µs  
di/dt=868 A/µs  
di/dt=1011 A/µs  
Qr  
Recovered charge  
±15  
350  
20  
125  
150  
25  
μC  
1,38  
0,093  
0,197  
0,234  
220,72  
183,67  
146,55  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
mWs  
A/µs  
(dirf/dt)max  
125  
150  
Copyright Vincotech  
11  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Input Boost Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
5
0,02  
30  
25  
5
6
7
V
V
25  
1,44  
1,61  
1,64  
1,9(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
0,01  
0,2  
mA  
µA  
Ω
30  
None  
2530  
65  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 1 Mhz  
0
30  
25  
25  
Reverse transfer capacitance  
Gate charge  
46  
15  
400  
30  
84  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
1,5  
K/W  
Dynamic  
25  
21  
19  
td(on)  
Turn-on delay time  
125  
150  
25  
ns  
ns  
19  
8
tr  
Rise time  
125  
150  
25  
8
8
Rgon = 8 Ω  
Rgoff = 8 Ω  
93  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
106  
109  
18,35  
29,84  
33,52  
0,501  
0,658  
0,679  
0,295  
0,45  
0,468  
ns  
0/15  
400  
30  
tf  
125  
150  
25  
ns  
QrFWD=1,07 µC  
QrFWD=1,96 µC  
QrFWD=2,28 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
mWs  
mWs  
Eoff  
125  
150  
Copyright Vincotech  
12  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Input Boost Diode  
Static  
25  
1,52  
1,46  
1,43  
1,92(1)  
VF  
IR  
Forward voltage  
30  
125  
150  
V
Reverse leakage current  
Vr = 650 V  
25  
1,6  
µA  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
1,92  
K/W  
Dynamic  
25  
50,22  
63,43  
67,68  
42,3  
IRRM  
Peak recovery current  
125  
150  
25  
A
trr  
Reverse recovery time  
125  
150  
25  
64,99  
72,95  
1,07  
ns  
di/dt=5993 A/µs  
di/dt=5650 A/µs  
di/dt=5315 A/µs  
Qr  
Recovered charge  
0/15  
400  
30  
125  
150  
25  
1,96  
μC  
2,28  
0,292  
0,553  
0,654  
2522  
1944  
2299  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
mWs  
A/µs  
(dirf/dt)max  
125  
150  
Copyright Vincotech  
13  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
VGE [V]  
VGS [V]  
Min  
Max  
Input Boost Sw. Protection Diode  
Static  
25  
1,23  
1,67  
1,56  
1,87(1)  
0,14  
VF  
IR  
Forward voltage  
10  
V
125  
Reverse leakage current  
Thermal  
Vr = 650 V  
25  
µA  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
2,87  
K/W  
ByPass Diode  
Static  
25  
0,988  
0,899  
1,21(1)  
1,1(1)  
VF  
IR  
Forward voltage  
13  
V
125  
Reverse leakage current  
Vr = 1600 V  
25  
50  
µA  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
1,25  
K/W  
Thermistor  
Static  
R
ΔR/R  
P
Rated resistance  
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
25  
22  
kΩ  
%
R100 = 1484 Ω  
100  
25  
-5  
5
130  
1,5  
mW  
mW/K  
K
d
25  
B(25/50)  
Tol. ±1 %  
Tol. ±1 %  
3962  
4000  
B(25/100)  
B-value  
K
Vincotech Thermistor Reference  
I
(1)  
Value at chip level  
(2)  
Only valid with pre-applied Vincotech thermal interface material.  
Copyright Vincotech  
14  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Low Buck Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
80  
80  
VGE  
:
7 V  
8 V  
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
60  
40  
20  
0
60  
40  
20  
0
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
V
CE(V)  
VCE(V)  
tp  
=
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
VGE  
Tj =  
125 °C  
150 °C  
Tj:  
VGE from 7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
1
30  
10  
25  
20  
15  
10  
5
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
0
0
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
1
2
3
4
5
6
7
8
9
10  
10  
tp(s)  
V
GE(V)  
tp  
VCE  
=
=
250  
10  
μs  
V
D =  
tp / T  
1,501  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
5,92E-02  
1,11E-01  
4,91E-01  
4,45E-01  
2,28E-01  
7,55E-02  
9,11E-02  
3,33E+00  
5,14E-01  
8,64E-02  
3,10E-02  
6,69E-03  
1,48E-03  
2,40E-04  
Copyright Vincotech  
15  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Low Buck Switch Characteristics  
figure 5.  
IGBT  
Safe operating area  
IC = f(VCE  
)
1000  
100  
10  
1
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
16  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
High Buck Switch Characteristics  
figure 6.  
IGBT  
figure 7.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
80  
80  
VGE  
:
7 V  
8 V  
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
60  
40  
20  
0
60  
40  
20  
0
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
V
CE(V)  
VCE(V)  
tp  
=
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
VGE  
Tj =  
125 °C  
150 °C  
Tj:  
VGE from 7 V to 17 V in steps of 1 V  
figure 8.  
IGBT  
figure 9.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
1
30  
10  
25  
20  
15  
10  
5
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
0
0
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
1
2
3
4
5
6
7
8
9
10  
10  
tp(s)  
V
GE(V)  
tp  
VCE  
=
=
250  
10  
μs  
V
D =  
tp / T  
1,501  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
5,92E-02  
1,11E-01  
4,91E-01  
4,45E-01  
2,28E-01  
7,55E-02  
9,11E-02  
3,33E+00  
5,14E-01  
8,64E-02  
3,10E-02  
6,69E-03  
1,48E-03  
2,40E-04  
Copyright Vincotech  
17  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
High Buck Switch Characteristics  
figure 10.  
IGBT  
Safe operating area  
IC = f(VCE  
)
1000  
100  
10  
1
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
18  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Buck Diode Characteristics  
figure 11.  
FWD  
figure 12.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
1
60  
50  
40  
30  
20  
10  
0
10  
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
1,875  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
8,42E-02  
1,79E-01  
8,86E-01  
4,50E-01  
2,75E-01  
3,60E+00  
3,95E-01  
7,08E-02  
1,69E-02  
2,45E-03  
Copyright Vincotech  
19  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Boost Switch Characteristics  
figure 13.  
IGBT  
figure 14.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
60  
60  
VGE  
:
7 V  
8 V  
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
4,5  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
4,5  
V
CE(V)  
VCE(V)  
tp  
=
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
VGE  
Tj =  
125 °C  
150 °C  
Tj:  
VGE from 7 V to 17 V in steps of 1 V  
figure 15.  
IGBT  
figure 16.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
1
20  
10  
0
15  
10  
5
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
0
0
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
2
4
6
8
10  
10  
10  
tp(s)  
V
GE(V)  
tp  
VCE  
=
=
250  
10  
μs  
V
D =  
tp / T  
1,604  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
8,72E-02  
2,19E-01  
7,41E-01  
3,11E-01  
1,15E-01  
1,31E-01  
1,64E+00  
2,09E-01  
5,24E-02  
1,19E-02  
2,56E-03  
3,71E-04  
Copyright Vincotech  
20  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Boost Switch Characteristics  
figure 17.  
IGBT  
Safe operating area  
IC = f(VCE  
)
100  
10µs  
10  
1
100µs  
1ms  
10ms  
100ms  
DC  
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
21  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Low Boost Diode Characteristics  
figure 18.  
FWD  
figure 19.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
1
60  
50  
40  
30  
20  
10  
0
10  
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
1,875  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
8,42E-02  
1,79E-01  
8,86E-01  
4,50E-01  
2,75E-01  
3,60E+00  
3,95E-01  
7,08E-02  
1,69E-02  
2,45E-03  
Copyright Vincotech  
22  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
High Boost Diode Characteristics  
figure 20.  
FWD  
figure 21.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
1
60  
50  
40  
30  
20  
10  
0
10  
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
1,875  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
8,42E-02  
1,79E-01  
8,86E-01  
4,50E-01  
2,75E-01  
3,60E+00  
3,95E-01  
7,08E-02  
1,69E-02  
2,45E-03  
Copyright Vincotech  
23  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Input Boost Switch Characteristics  
figure 22.  
IGBT  
figure 23.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
80  
80  
VGE  
:
7 V  
8 V  
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
60  
40  
20  
0
60  
40  
20  
0
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
V
CE(V)  
VCE(V)  
tp  
=
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
VGE  
Tj =  
125 °C  
150 °C  
Tj:  
VGE from 7 V to 17 V in steps of 1 V  
figure 24.  
IGBT  
figure 25.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
1
30  
10  
25  
20  
15  
10  
5
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
0
0
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
1
2
3
4
5
6
7
8
9
10  
10  
tp(s)  
V
GE(V)  
tp  
VCE  
=
=
250  
10  
μs  
V
D =  
tp / T  
1,501  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
5,92E-02  
1,11E-01  
4,91E-01  
4,45E-01  
2,28E-01  
7,55E-02  
9,11E-02  
3,33E+00  
5,14E-01  
8,64E-02  
3,10E-02  
6,69E-03  
1,48E-03  
2,40E-04  
Copyright Vincotech  
24  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Input Boost Switch Characteristics  
figure 26.  
IGBT  
Safe operating area  
IC = f(VCE  
)
1000  
100  
10  
1
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
25  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Input Boost Diode Characteristics  
figure 27.  
FWD  
figure 28.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
1
80  
60  
40  
20  
0
10  
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
1,918  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
9,41E-02  
3,44E-01  
8,56E-01  
3,61E-01  
1,37E-01  
1,27E-01  
2,25E+00  
2,12E-01  
5,84E-02  
9,83E-03  
2,89E-03  
4,79E-04  
Copyright Vincotech  
26  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Input Boost Sw. Protection Diode Characteristics  
figure 29.  
FWD  
figure 30.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
1
30  
25  
20  
15  
10  
5
10  
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
0
0,0  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
2,873  
25 °C  
Tj:  
125 °C  
Rth(j-s) =  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
6,53E-02  
1,48E-01  
1,31E+00  
7,32E-01  
4,04E-01  
2,11E-01  
3,94E+00  
4,48E-01  
5,96E-02  
1,36E-02  
2,79E-03  
5,37E-04  
Copyright Vincotech  
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01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
ByPass Diode Characteristics  
figure 31.  
Rectifier  
figure 32.  
Rectifier  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
1
80  
60  
40  
20  
0
10  
0
10  
-1  
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
0,05  
0,02  
0,01  
0,005  
0
10  
-4  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,00  
0,25  
0,50  
μs  
0,75  
1,00  
1,25  
1,50  
1,75  
10  
10  
10  
10  
VF(V)  
tp(s)  
tp  
=
250  
D =  
tp / T  
1,254  
25 °C  
Tj:  
125 °C  
Rth(j-s) =  
K/W  
Rectifier thermal model values  
R (K/W)  
τ (s)  
8,00E-02  
1,56E-01  
6,95E-01  
2,23E-01  
9,97E-02  
5,22E+00  
4,18E-01  
8,82E-02  
3,07E-02  
5,99E-03  
Copyright Vincotech  
28  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Thermistor Characteristics  
figure 33.  
Thermistor  
Typical NTC characteristic as function of temperature  
RT = f(T)  
25000  
20000  
15000  
10000  
5000  
0
20  
40  
60  
80  
100  
120  
140  
T(°C)  
Copyright Vincotech  
29  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Low Buck Switching Characteristics  
figure 34.  
IGBT  
figure 35.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of IGBT turn on gate resistor  
E = f(IC)  
E = f(Rg)  
0,8  
0,7  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
0,8  
0,7  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
Eon  
Eon  
Eon  
Eon  
Eoff  
Eoff  
Eon  
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
0
10  
20  
30  
40  
50  
60  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
8
V
V
Ω
Ω
125 °C  
150 °C  
350  
±15  
30  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Rgon  
Rgoff  
8
figure 36.  
FWD  
figure 37.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
1,2  
1,0  
0,8  
0,6  
0,4  
0,2  
0,0  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
10  
20  
30  
40  
50  
60  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
8
V
V
Ω
125 °C  
150 °C  
350  
±15  
30  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Copyright Vincotech  
30  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Low Buck Switching Characteristics  
figure 38.  
IGBT  
figure 39.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of IGBT turn on gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
0
10  
td(on)  
td(off)  
-1  
10  
-1  
10  
td(off)  
td(on)  
tf  
tf  
tr  
-2  
10  
-2  
tr  
10  
-3  
10  
-3  
10  
0
10  
20  
30  
40  
50  
60  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
350  
±15  
8
°C  
V
150  
350  
±15  
30  
°C  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
A
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
Ω
Ω
8
figure 40.  
FWD  
figure 41.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(IC)  
trr = f(Rgon)  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
0,175  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
trr  
trr  
trr  
trr  
trr  
trr  
0
10  
20  
30  
40  
50  
60  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
8
V
V
Ω
125 °C  
150 °C  
350  
±15  
30  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
31  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Low Buck Switching Characteristics  
figure 42.  
FWD  
figure 43.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Qr = f(IC)  
Qr = f(Rgon)  
6
5
4
3
2
1
0
4,5  
4,0  
3,5  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
Qr  
Qr  
Qr  
Qr  
Qr  
Qr  
0
10  
20  
30  
40  
50  
60  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
8
V
V
Ω
125 °C  
150 °C  
350  
±15  
30  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
figure 44.  
FWD  
figure 45.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
IRM = f(IC)  
IRM = f(Rgon)  
120  
100  
80  
60  
40  
20  
0
125  
100  
75  
50  
25  
0
IRM  
IRM  
IRM  
IRM  
IRM  
IRM  
0
10  
20  
30  
40  
50  
60  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
8
V
V
Ω
125 °C  
150 °C  
350  
±15  
30  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
32  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Low Buck Switching Characteristics  
figure 46.  
FWD  
figure 47.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgon)  
12000  
17500  
15000  
12500  
10000  
7500  
5000  
2500  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
dirr/dt ──────  
10000  
8000  
6000  
4000  
2000  
0
0
10  
20  
30  
40  
50  
60  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
R
gon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
8
V
V
Ω
125 °C  
150 °C  
350  
±15  
30  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 48.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
70  
IC MAX  
60  
50  
40  
30  
20  
10  
0
0
100  
200  
300  
400  
500  
600  
700  
800  
V
CE(V)  
Tj =  
At  
150  
°C  
Rgon  
Rgoff  
=
=
8
8
Ω
Ω
Copyright Vincotech  
33  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
High Buck Switching Characteristics  
figure 49.  
IGBT  
figure 50.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of IGBT turn on gate resistor  
E = f(IC)  
E = f(Rg)  
0,8  
0,7  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
0,8  
0,7  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
Eon  
Eon  
Eon  
Eon  
Eoff  
Eoff  
Eon  
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
0
10  
20  
30  
40  
50  
60  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
8
V
V
Ω
Ω
125 °C  
150 °C  
350  
±15  
30  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Rgon  
Rgoff  
8
figure 51.  
IGBT  
figure 52.  
IGBT  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
1,2  
1,0  
0,8  
0,6  
0,4  
0,2  
0,0  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
10  
20  
30  
40  
50  
60  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
8
V
V
Ω
125 °C  
150 °C  
350  
±15  
30  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Copyright Vincotech  
34  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
High Buck Switching Characteristics  
figure 53.  
IGBT  
figure 54.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of IGBT turn on gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
0
10  
td(on)  
td(off)  
-1  
10  
-1  
10  
td(off)  
td(on)  
tf  
tf  
tr  
-2  
10  
-2  
tr  
10  
-3  
10  
-3  
10  
0
10  
20  
30  
40  
50  
60  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
350  
±15  
8
°C  
V
150  
350  
±15  
30  
°C  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
A
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
Ω
Ω
8
figure 55.  
IGBT  
figure 56.  
IGBT  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(IC)  
trr = f(Rgon)  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
0,175  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
trr  
trr  
trr  
trr  
trr  
trr  
0
10  
20  
30  
40  
50  
60  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
8
V
V
Ω
125 °C  
150 °C  
350  
±15  
30  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
35  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
High Buck Switching Characteristics  
figure 57.  
IGBT  
figure 58.  
IGBT  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Qr = f(IC)  
Qr = f(Rgon)  
6
5
4
3
2
1
0
4,5  
4,0  
3,5  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
Qr  
Qr  
Qr  
Qr  
Qr  
Qr  
0
10  
20  
30  
40  
50  
60  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
8
V
V
Ω
125 °C  
150 °C  
350  
±15  
30  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
figure 59.  
IGBT  
figure 60.  
IGBT  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
IRM = f(IC)  
IRM = f(Rgon)  
120  
100  
80  
60  
40  
20  
0
125  
100  
75  
50  
25  
0
IRM  
IRM  
IRM  
IRM  
IRM  
IRM  
0
10  
20  
30  
40  
50  
60  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
8
V
V
Ω
125 °C  
150 °C  
350  
±15  
30  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
36  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
High Buck Switching Characteristics  
figure 61.  
IGBT  
figure 62.  
IGBT  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgon)  
12000  
17500  
15000  
12500  
10000  
7500  
5000  
2500  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
dirr/dt ──────  
10000  
8000  
6000  
4000  
2000  
0
0
10  
20  
30  
40  
50  
60  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
R
gon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
8
V
V
Ω
125 °C  
150 °C  
350  
±15  
30  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 63.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
70  
IC MAX  
60  
50  
40  
30  
20  
10  
0
0
100  
200  
300  
400  
500  
600  
700  
800  
V
CE(V)  
Tj =  
At  
150  
°C  
Rgon  
Rgoff  
=
=
8
8
Ω
Ω
Copyright Vincotech  
37  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Boost Switching Characteristics  
figure 64.  
IGBT  
figure 65.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of IGBT turn on gate resistor  
E = f(IC)  
E = f(Rg)  
1,50  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
1,75  
1,50  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
Eon  
Eon  
Eon  
Eon  
Eon  
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
0
5
10  
15  
20  
25  
30  
35  
40  
IC(A)  
0
10  
20  
30  
40  
50  
60  
70  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
16  
V
V
Ω
Ω
125 °C  
150 °C  
350  
±15  
20  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
Rgoff  
16  
figure 66.  
FWD  
figure 67.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
0,40  
0,35  
0,30  
0,25  
0,20  
0,15  
0,10  
0,05  
0,00  
0,30  
0,25  
0,20  
0,15  
0,10  
0,05  
0,00  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
5
10  
15  
20  
25  
30  
35  
40  
IC(A)  
0
10  
20  
30  
40  
50  
60  
70  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
16  
V
V
Ω
125 °C  
150 °C  
350  
±15  
20  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
38  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Boost Switching Characteristics  
figure 68.  
IGBT  
figure 69.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of IGBT turn on gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
0
10  
td(off)  
td(on)  
td(off)  
tf  
td(on)  
tf  
-1  
-1  
10  
10  
tr  
tr  
-2  
10  
-2  
10  
-3  
10  
-3  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
IC(A)  
0
10  
20  
30  
40  
50  
60  
70  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
350  
±15  
16  
°C  
V
150  
350  
±15  
20  
°C  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
A
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
Ω
Ω
16  
figure 70.  
FWD  
figure 71.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(IC)  
trr = f(Rgon)  
0,200  
0,175  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
0,30  
0,25  
0,20  
0,15  
0,10  
0,05  
0,00  
trr  
trr  
trr  
trr  
trr  
trr  
0
5
10  
15  
20  
25  
30  
35  
40  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
16  
V
V
Ω
125 °C  
150 °C  
350  
±15  
20  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
39  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Boost Switching Characteristics  
figure 72.  
FWD  
figure 73.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Qr = f(IC)  
Qr = f(Rgon)  
2,25  
2,00  
1,75  
1,50  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
1,75  
1,50  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
Qr  
Qr  
Qr  
Qr  
Qr  
Qr  
0
5
10  
15  
20  
25  
30  
35  
40  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
16  
V
V
Ω
125 °C  
150 °C  
350  
±15  
20  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 74.  
FWD  
figure 75.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
IRM = f(IC)  
IRM = f(Rgon)  
25  
20  
15  
10  
5
40  
35  
30  
25  
20  
15  
10  
5
IRM  
IRM  
IRM  
IRM  
IRM  
IRM  
0
0
0
5
10  
15  
20  
25  
30  
35  
40  
IC(A)  
0
10  
20  
30  
40  
50  
60  
70  
R
gon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
16  
V
V
Ω
125 °C  
150 °C  
350  
±15  
20  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Copyright Vincotech  
40  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Boost Switching Characteristics  
figure 76.  
FWD  
figure 77.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgon)  
4000  
6000  
5000  
4000  
3000  
2000  
1000  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
3500  
3000  
2500  
2000  
1500  
1000  
500  
dirr/dt ──────  
0
0
5
10  
15  
20  
25  
30  
35  
40  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
16  
V
V
Ω
125 °C  
150 °C  
350  
±15  
20  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 78.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
45  
IC MAX  
40  
35  
30  
25  
20  
15  
10  
5
0
0
100  
200  
300  
400  
500  
600  
700  
800  
V
CE(V)  
Tj =  
At  
150  
°C  
Rgon  
Rgoff  
=
=
16  
16  
Ω
Ω
Copyright Vincotech  
41  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Input Boost Switching Characteristics  
figure 79.  
IGBT  
figure 80.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of IGBT turn on gate resistor  
E = f(IC)  
E = f(Rg)  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
Eon  
Eon  
Eon  
Eon  
Eon  
Eoff  
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
0
10  
20  
30  
40  
50  
60  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
400  
0/15  
8
V
V
Ω
Ω
125 °C  
150 °C  
400  
0/15  
30  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
Rgoff  
8
figure 81.  
FWD  
figure 82.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
1,0  
0,8  
0,6  
0,4  
0,2  
0,0  
0,8  
0,7  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
10  
20  
30  
40  
50  
60  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
400  
0/15  
8
V
V
Ω
125 °C  
150 °C  
400  
0/15  
30  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Copyright Vincotech  
42  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Input Boost Switching Characteristics  
figure 83.  
IGBT  
figure 84.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of IGBT turn on gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
0
10  
td(off)  
td(off)  
-1  
10  
-1  
10  
td(on)  
td(on)  
tf  
tf  
tr  
-2  
10  
-2  
tr  
10  
-3  
10  
-3  
10  
0
10  
20  
30  
40  
50  
60  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
400  
0/15  
8
°C  
V
150  
400  
0/15  
30  
°C  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
A
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
Ω
Ω
8
figure 85.  
FWD  
figure 86.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(IC)  
trr = f(Rgon)  
0,12  
0,10  
0,08  
0,06  
0,04  
0,02  
0,00  
0,12  
0,10  
0,08  
0,06  
0,04  
0,02  
0,00  
trr  
trr  
trr  
trr  
trr  
trr  
0
10  
20  
30  
40  
50  
60  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
400  
0/15  
8
V
V
Ω
125 °C  
150 °C  
400  
0/15  
30  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
43  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Input Boost Switching Characteristics  
figure 87.  
FWD  
figure 88.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Qr = f(IC)  
Qr = f(Rgon)  
4,0  
3,5  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
Qr  
Qr  
Qr  
Qr  
Qr  
Qr  
0
10  
20  
30  
40  
50  
60  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
400  
0/15  
8
V
V
Ω
125 °C  
150 °C  
400  
0/15  
30  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
figure 89.  
FWD  
figure 90.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
IRM = f(IC)  
IRM = f(Rgon)  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
120  
100  
80  
60  
40  
20  
0
IRM  
IRM  
IRM  
IRM  
IRM  
IRM  
0
10  
20  
30  
40  
50  
60  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
400  
0/15  
8
V
V
Ω
125 °C  
150 °C  
400  
0/15  
30  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
44  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Input Boost Switching Characteristics  
figure 91.  
FWD  
figure 92.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgon)  
9000  
10000  
8000  
6000  
4000  
2000  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
8000  
dirr/dt ──────  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
0
10  
20  
30  
40  
50  
60  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
R
gon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
400  
0/15  
8
V
V
Ω
125 °C  
150 °C  
400  
0/15  
30  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 93.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
70  
IC MAX  
60  
50  
40  
30  
20  
10  
0
0
100  
200  
300  
400  
500  
600  
700  
800  
V
CE(V)  
Tj =  
At  
150  
°C  
Rgon  
Rgoff  
=
=
8
8
Ω
Ω
Copyright Vincotech  
45  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Switching Definitions  
figure 94.  
IGBT  
figure 95.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
IC  
VGE  
VGE  
VCE  
tEoff  
VCE  
tEon  
figure 96.  
IGBT  
figure 97.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
Copyright Vincotech  
46  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Switching Definitions  
figure 98.  
FWD  
figure 99.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Qr  
IF  
IF  
fitted  
VF  
Copyright Vincotech  
47  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Ordering Code  
Version  
Ordering Code  
Without thermal paste  
10-PY07BVA030RW-LF42E28Y  
10-PY07BVA030RW-LF42E28Y-/7/  
10-PY07BVA030RW-LF42E28Y-/3/  
With thermal paste (5,2 W/mK, PTM6000HV)  
With thermal paste (3,4 W/mK, PSX-P7)  
Marking  
Name  
Date code  
UL & VIN  
Lot  
Serial  
Text  
NN-NNNNNNNNNNNNNN-  
TTTTTTVV  
WWYY  
UL VIN  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
WWYY  
Outline  
Pin table [mm]  
Pin  
1
X
Y
9
6
3
0
0
0
0
3
6
9
Function  
G22  
S14  
52,3  
52,3  
2
3
52,3  
G14  
Ph2  
4
49,3  
5
46,8  
Ph2  
6
30,75  
28,25  
25,25  
25,25  
25,25  
Ph1  
7
Ph1  
8
G12  
S12  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
G21  
not assembled  
not assembled  
not assembled  
not assembled  
7,1  
7,1  
0
0
DC+In1  
2,5  
0
DC+In1  
Boost1  
0
2,5  
15,1  
17,6  
26  
Boost1  
11,1  
11,1  
11,1  
11,1  
0
DC+Boost  
DC+Boost  
DC-Boost  
DC-Boost  
G25  
28,3  
28,3  
28,3  
3
S25  
not assembled  
not assembled  
28,3  
26,4  
31,3  
G11  
S11  
28,3  
36,8  
28,3  
28,3  
28,3  
28,3  
17,7  
17,7  
11,2  
8,7  
Therm1  
Therm2  
S13  
41,9  
47,4  
52,3  
G13  
40,85  
37,85  
39,35  
39,35  
52,3  
DC-2  
DC-1  
DC+  
DC+  
17,3  
A20  
Copyright Vincotech  
48  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Pinout  
19,20  
35,36  
DC+Boost  
DC+  
D26  
DC+In1  
15,16  
T12  
T14  
D25  
G12  
S12  
G14  
3
D20  
D22  
8
D21  
S14  
2
17,18  
9
Boost1  
Ph2  
4,5  
T21  
G21  
T22  
A20  
37  
G22  
1
10  
D45  
Ph1  
6,7  
T25  
T11  
T13  
G25  
D12  
D14  
23  
24  
G11  
S11  
G13  
S13  
S25  
27  
28  
32  
31  
Rt  
DC-Boost  
21,22  
DC-1  
34  
DC-2  
33  
Therm1  
29  
Therm2  
30  
Identification  
Component  
Voltage  
Current  
Function  
Comment  
ID  
T11, T13  
T12, T14  
D22, D21  
T21, T22  
D14, D12  
D20  
IGBT  
IGBT  
FWD  
IGBT  
FWD  
FWD  
IGBT  
FWD  
650 V  
650 V  
650 V  
650 V  
650 V  
650 V  
650 V  
650 V  
30 A  
30 A  
20 A  
20 A  
20 A  
20 A  
30 A  
30 A  
Low Buck Switch  
High Buck Switch  
Buck Diode  
Boost Switch  
Low Boost Diode  
High Boost Diode  
T25  
Input Boost Switch  
Input Boost Diode  
D25  
Input Boost Sw. Protection  
Diode  
D45  
FWD  
650 V  
10 A  
35 A  
D26  
Rt  
Rectifier  
NTC  
1600 V  
ByPass Diode  
Thermistor  
Copyright Vincotech  
49  
01 May. 2022 / Revision 3  
10-PY07BVA030RW-LF42E28Y  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 100  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow 1 packages see vincotech.com website.  
Package data  
Package data for flow 1 packages see vincotech.com website.  
Vincotech thermistor reference  
See Vincotech thermistor reference table at vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
10-PY07BVA030RW-LF42E28Y-D3-14  
1 May. 2022  
New Datasheet format, module is unchanged  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
50  
01 May. 2022 / Revision 3  

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