30-FT12NIA150SH-LG09F08 [VINCOTECH]
Easy paralleling;High speed switching;Low switching losses;
| 型号： | 30-FT12NIA150SH-LG09F08 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;High speed switching;Low switching losses |
| 文件： | 总34页 (文件大小：3663K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
flowNPC 2
1500 V / 150 A
Features
flow 2 13 mm housing
● 1200 V components for 1500 VDC systems
● Four quadrant operation
Solder pin
Press-fit pin
Schematic
Target applications
● Solar Inverters
● Special Application
Types
● 30-FT12NIA150SH-LG09F08
● 30-PT12NIA150SH-LG09F08Y
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Switch
VCES
IC
Collector-emitter voltage
1200
137
450
345
±20
10
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Ptot
VGES
tSC
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
W
V
Short circuit ratings
VGE = 15 V
Vcc = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
1
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1300
94
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
300
233
175
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Buck Sw. Protection Diode
VRRM
IF
Ptot
Tjmax
Peak repetitive reverse voltage
1300
28
V
A
Continuous (direct) forward current
Total power dissipation
Tj = Tjmax
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
97
W
°C
Maximum junction temperature
175
Boost Switch
VCES
IC
Collector-emitter voltage
1200
137
450
345
±20
10
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Ptot
VGES
tSC
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
W
V
Short circuit ratings
VGE = 15 V
Vcc = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Boost Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1300
94
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
300
233
175
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Copyright Vincotech
2
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Boost Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
1200
30
V
A
IF
IFSM
I2t
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
100
50
A
50 Hz Single Half Sine Wave
tp = 10 ms
A2s
W
°C
Ptot
Tjmax
Total power dissipation
Tj = Tjmax
74
Maximum junction temperature
175
Boost D. Protection Diode
VRRM
IF
IFSM
I2t
Ptot
Tjmax
Peak repetitive reverse voltage
1200
30
V
A
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
100
50
A
50 Hz Single Half Sine Wave
tp = 10 ms
A2s
W
°C
Total power dissipation
Tj = Tjmax
74
Maximum junction temperature
175
Boost Sw.Inv.Diode
VRRM
IF
IFSM
I2t
Ptot
Tjmax
Peak repetitive reverse voltage
1200
121
V
A
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
860
A
50 Hz Single Half Sine Wave
tp = 10 ms
3700
234
A2s
W
°C
Total power dissipation
Tj = Tjmax
Maximum junction temperature
175
Copyright Vincotech
3
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Storage temperature
Tstg
Tjop
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
min. 12,7
min. 12,7
= 525
mm
mm
Clearance
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
4
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0052 25
25
5,3
5,8
6,3
V
V
1,78
2,16
2,48
2,56
2,42
VCEsat
Collector-emitter saturation voltage
15
150
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
2
µA
nA
Ω
20
240
none
8800
470
Cies
Cres
Qg
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
15
1140
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,28
K/W
25
116
120
120
20
Turn-on delay time
td(on)
125
150
25
Rise time
tr
125
150
25
125
150
25
125
150
25
125
150
25
23
24
213
267
279
20
Rgon = 4 Ω
Rgoff = 4 Ω
ns
Turn-off delay time
Fall time
td(off)
±15
600
150
tf
66
75
6,23
8,57
9,33
5,36
9,58
Qr
FWD
Qr
FWD
Qr
FWD
= 4,4 μC
= 8,4 μC
= 9,7 μC
Turn-on energy (per pulse)
Eon
mWs
125
Eoff
Turn-off energy (per pulse)
150
10,74
Copyright Vincotech
5
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Diode
Static
25
150
3,35
3,10
3,84
7,6
VF
IR
Forward voltage
Reverse leakage current
Thermal
V
125
1300
25
µA
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink
Dynamic
Rth(j-s)
0,41
K/W
25
110
139
151
IRRM
125
150
25
Peak recovery current
A
79
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
111
124
ns
di/dt = 8628 A/μs
di/dt = 8113 A/μs ±15
di/dt = 8006 A/μs
4,42
8,38
9,74
1,50
3,08
3,62
7069
1003
1214
600
150
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Buck Sw. Protection Diode
Static
25
125
3,56
3,62
4,44
1,6
VF
IR
Forward voltage
Reverse leakage current
Thermal
30
V
1300
25
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,97
K/W
Copyright Vincotech
6
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0052 25
25
5,3
5,8
6,3
V
V
1,78
2,16
2,48
2,56
2,42
VCEsat
Collector-emitter saturation voltage
15
150
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
2
µA
nA
Ω
20
240
none
8800
470
Cies
Cres
Qg
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
15
1140
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,28
K/W
25
111
118
118
21
Turn-on delay time
td(on)
125
150
25
Rise time
tr
125
150
25
125
150
25
125
150
25
125
150
25
23
23
209
266
285
25
Rgon = 4 Ω
Rgoff = 4 Ω
ns
Turn-off delay time
Fall time
td(off)
±15
600
150
tf
65
84
5,76
8,31
9,10
5,12
8,86
Qr
FWD
Qr
FWD
Qr
FWD
= 4,2 μC
= 8,7 μC
= 10,3 μC
Turn-on energy (per pulse)
Eon
mWs
125
Eoff
Turn-off energy (per pulse)
150
10,49
Copyright Vincotech
7
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Diode
Static
25
150
3,35
3,10
3,84
7,6
VF
IR
Forward voltage
Reverse leakage current
Thermal
V
125
1300
25
µA
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink
Dynamic
Rth(j-s)
0,41
K/W
25
87
127
139
IRRM
125
150
25
Peak recovery current
A
88
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
126
149
ns
di/dt = 7944 A/μs
di/dt = 7602 A/μs ±15
di/dt = 7467 A/μs
4,20
8,68
10,27
1,48
2,90
3,55
2530
874
600
150
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
1472
Boost Sw. Protection Diode
Static
25
2,27
2,44
2,36
2,74
Forward voltage
VF
IR
25
125
150
25
V
60
Reverse leakage current
1200
µA
150
3300
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,29
K/W
Copyright Vincotech
8
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost D. Protection Diode
Static
25
2,27
2,44
2,36
2,74
Forward voltage
VF
IR
25
125
150
25
V
60
Reverse leakage current
1200
µA
150
3300
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,29
K/W
Boost Sw.Inv.Diode
Static
25
2,22
2,30
2,23
2,49
VF
IR
125
150
25
Forward voltage
150
V
240
Reverse leakage current
1200
µA
150
28000
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,41
22
K/W
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50) Tol. ±1 %
B(25/100) Tol. ±1 %
3962
4000
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
9
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
125
7 V to 17 V in steps of 1 V
μs
VGE
=
Tj:
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,28
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
2,55E-02
4,70E-02
6,23E-02
9,01E-02
3,16E-02
9,83E-03
8,64E-03
5,27E+00
1,31E+00
2,29E-01
5,22E-02
1,71E-02
2,13E-03
4,08E-04
Copyright Vincotech
10
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Buck Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
I
D =
single pulse
80 ºC
Ts
=
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
11
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Buck Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
10
Z
10-1
10-2
10-4
10-3
10-2
10-1
10
10
10
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
0,41
Tj:
R th(j-s)
=
K/W
FWD thermal model values
R (K/W)
τ
(s)
3,46E-02
5,25E-02
8,36E-02
1,54E-01
4,14E-02
1,35E-02
2,79E-02
5,29E+00
9,84E-01
1,62E-01
3,91E-02
9,22E-03
1,28E-03
2,39E-04
Copyright Vincotech
12
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Buck Sw. Protection Diode Characteristics
figure 1.
Prot. Diode
figure 2.
Prot. Diode
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
0,97
Tj:
R th(j-s)
K/W
Prot. Diode thermal model values
R (K/W)
τ
(s)
3,38E-02
7,05E-02
1,87E-01
4,58E-01
1,41E-01
8,48E-02
6,50E+00
9,48E-01
1,18E-01
2,73E-02
4,93E-03
6,22E-04
Copyright Vincotech
13
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
125
7 V to 17 V in steps of 1 V
μs
VGE
=
Tj:
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,28
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
2,55E-02
4,70E-02
6,23E-02
9,01E-02
3,16E-02
9,83E-03
8,64E-03
5,27E+00
1,31E+00
2,29E-01
5,22E-02
1,71E-02
2,13E-03
4,08E-04
Copyright Vincotech
14
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Boost Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
I
D =
single pulse
Ts
=
80
ºC
VGE
=
±15
Tjmax
V
Tj =
Copyright Vincotech
15
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
10
Z
10-1
10-2
10-4
10-3
10-2
10-1
10
10
10
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
0,41
Tj:
R th(j-s)
=
K/W
FWD thermal model values
R (K/W)
τ
(s)
3,46E-02
5,25E-02
8,36E-02
1,54E-01
4,14E-02
1,35E-02
2,79E-02
5,29E+00
9,84E-01
1,62E-01
3,91E-02
9,22E-03
1,28E-03
2,39E-04
Copyright Vincotech
16
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Boost Sw. Protection Diode Characteristics
figure 1.
Prot. Diode
figure 2.
Prot. Diode
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-3
10-5
=
10-4
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
Tj:
R th(j-s)
1,29
K/W
Prot. Diode thermal model values
R (K/W)
τ
(s)
6,16E-02
1,25E-01
4,82E-01
3,44E-01
1,35E-01
1,42E-01
2,03E+00
2,79E-01
4,69E-02
1,34E-02
3,30E-03
8,91E-04
Copyright Vincotech
17
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Boost D. Protection Diode Characteristics
figure 1.
Prot. Diode
figure 2.
Prot. Diode
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-3
10-5
=
10-4
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
Tj:
R th(j-s)
1,29
K/W
Prot. Diode thermal model values
R (K/W)
τ
(s)
6,16E-02
1,25E-01
4,82E-01
3,44E-01
1,35E-01
1,42E-01
2,03E+00
2,79E-01
4,69E-02
1,34E-02
3,30E-03
8,91E-04
Copyright Vincotech
18
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Boost Sw.Inv.Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
0,41
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ
(s)
4,46E-02
5,69E-02
1,16E-01
1,34E-01
2,84E-02
2,55E-02
3,97E+00
7,74E-01
1,33E-01
3,91E-02
7,16E-03
1,10E-03
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
Copyright Vincotech
19
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Buck Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
25 °C
25 °C
With an inductive load at
With an inductive load at
600
±15
4
V
V
600
±15
150
V
V
A
VCE
VGE
=
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
Ω
Ω
4
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
600
±15
4
V
V
Ω
600
±15
150
V
V
A
VCE
VGE
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
20
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
150
600
±15
4
°C
150
600
±15
150
°C
V
Tj =
Tj =
V
V
Ω
Ω
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
VGE
I C
V
A
4
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon
)
t
t
25 °C
25 °C
600
±15
4
V
V
Ω
600
±15
150
V
V
A
At
VCE
=
At
VCE =
VGE
R gon
=
=
Tj:
VGE
I C
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
Copyright Vincotech
21
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Buck Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
600
25 °C
V
V
600
±15
150
V
V
A
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
25 °C
±15
4
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
Ω
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
25 °C
600
25 °C
V
V
600
±15
150
V
V
A
At
VCE
=
At
VCE
VGE
I C
=
±15
4
VGE
=
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
Ω
R gon
=
Copyright Vincotech
22
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Buck Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
diF/
dt
t
i
t
dirr/dt
dirr
/
dt
i
25 °C
At
VCE
=
600
±15
4
V
V
Ω
At
VCE
VGE
I C
=
600
±15
150
V
V
A
25 °C
125 °C
150 °C
:
Tj
125 °C
150 °C
:
Tj
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
IC MAX
I
I
I
V
At
Tj
=
=
=
125
°C
Ω
R gon
R goff
4
4
Ω
Copyright Vincotech
23
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Buck Switching Definitions
General conditions
=
=
=
125 °C
4 Ω
4 Ω
T j
Rgon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
150
267
V
600
150
120
V
A
A
ns
ns
t doff
=
tdon
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
t f =
600
150
66
V
VC (100%) =
I C (100%) =
600
150
23
V
A
A
ns
tr
=
ns
Copyright Vincotech
24
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Buck Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr
=
integrating time for Qr)
Qr
IF
IF
fitted
VF
600
150
139
111
V
150
A
VF (100%) =
I F (100%) =
I RRM (100%) =
I F (100%) =
Q r (100%) =
A
8,38
μC
A
ns
t rr
=
Copyright Vincotech
25
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
25 °C
25 °C
With an inductive load at
With an inductive load at
600
±15
4
V
V
600
±15
150
V
V
A
VCE
VGE
=
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
Ω
Ω
4
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
600
±15
4
V
V
Ω
600
±15
150
V
V
A
VCE
VGE
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
26
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
150
600
±15
4
°C
150
600
±15
150
°C
V
Tj =
Tj =
VCE
=
=
=
=
V
V
Ω
Ω
VCE
=
=
=
VGE
R gon
R goff
VGE
I C
V
A
4
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
25 °C
25 °C
At
VCE
=
600
±15
4
V
V
Ω
At
VCE
=
600
±15
150
V
V
A
VGE
R gon
=
=
Tj:
VGE
I C
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
Copyright Vincotech
27
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
600
25 °C
V
V
600
±15
150
V
V
A
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
25 °C
±15
4
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
Ω
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
25 °C
600
25 °C
V
V
600
±15
150
V
V
A
At
VCE
=
At
VCE
VGE
I C
=
±15
4
VGE
=
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
Ω
R gon
=
Copyright Vincotech
28
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/
dt
diF/dt
t
i
t
dirr
/
dt
dirr/dt
i
25 °C
At
VCE
=
600
±15
4
V
V
Ω
At
VCE
VGE
I C
=
600
±15
150
V
V
A
25 °C
125 °C
150 °C
:
Tj
125 °C
150 °C
:
Tj
VGE
=
=
R gon
=
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
IC MAX
I
I
I
V
At
Tj
=
=
=
125
°C
Ω
R gon
R goff
4
4
Ω
Copyright Vincotech
29
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Boost Switching Definitions
General conditions
=
=
=
125 °C
4 Ω
4 Ω
T j
Rgon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
150
266
V
600
150
118
V
A
A
ns
ns
t doff
=
tdon
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
t f =
600
150
65
V
VC (100%) =
I C (100%) =
600
150
23
V
A
A
ns
tr
=
ns
Copyright Vincotech
30
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Boost Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr
=
integrating time for Qr)
Qr
IF
IF
fitted
VF
600
150
127
126
V
150
A
VF (100%) =
I F (100%) =
I RRM (100%) =
I F (100%) =
Q r (100%) =
A
8,68
μC
A
ns
t rr
=
Copyright Vincotech
31
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Ordering Code & Marking
Version
without thermal paste 13 mm housing with solder pins
without thermal paste 13 mm housing with Press-fit pins
with thermal paste 13 mm housing with solder pins
with thermal paste 13 mm housing with Press-fit pins
Ordering Code
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
30-FT12NIA150SH-LG09F08-/3/
30-PT12NIA150SH-LG09F08Y-/3/
Name
Date code
WWYY
Serial
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
X
Y
3
0
0
0
0
0
0
0
0
0
Function
DC+1
70,9
70,9
68,4
65,9
58,2
55,7
53,2
50,7
43
Solder pin
1
2
3
DC+1
DC+1
DC+1
GND1
GND1
GND1
GND1
DC-1
DC-1
4
5
6
7
8
9
10
40,5
Press-fit pin
11
12
13
38
38
32,9
0
3
3
DC-1
DC-1
DC-2
14
15
16
17
18
19
20
21
22
32,9
30,4
27,9
20,35
17,85
15,35
12,85
5
0
0
0
0
0
0
0
0
0
DC-2
DC-2
DC-2
GND2
GND2
GND2
GND2
DC+2
DC+2
2,5
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
0
0
DC+2
DC+2
TM14
Ph2
0
3
0
16,35
36,9
36,9
36,9
36,9
36,9
36,8
36,9
36,9
36,9
36,9
36,9
36,9
4,6
7,1
9,6
12,1
29,9
33
Ph2
Ph2
Ph2
G12
S12
43
Ph1
45,5
48
Ph1
Ph1
50,5
64,1
70,9
Ph1
Therm1
Therm2
G11
61,65 25,05
60,65 22,05
S11
54,35
46,2
14,6
30,9
33,9
17,7
13,3
13,7
13,7
TM11
S13
47,2
G13
44,15
29,2
TM15
TM12
S14
18,95
15,95
G14
Copyright Vincotech
32
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11, T12
IGBT
1200 V
150 A
150 A
30 A
Buck Switch
Buck Diode
D11, D12
D41, D42
T14, T13
D13, D14
D43, D44
D45, D46
D15, D16
Rt
FWD
FWD
IGBT
FWD
FWD
FWD
FWD
NTC
1300 V
1300 V
1200 V
1300 V
1200 V
1200 V
1200 V
Buck Sw. Protection Diode
Boost Switch
150 A
150 A
25 A
Boost Diode
Boost Sw. Protection Diode
Boost D. Protection Diode
Boost Sw.Inv.Diode
Thermistor
25 A
150 A
Copyright Vincotech
33
09 Jul. 2019 / Revision 3
30-FT12NIA150SH-LG09F08
30-PT12NIA150SH-LG09F08Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 36
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 2 packages see vincotech.com website.
Package data
Package data for flow 2 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
30-xT12NIA150SH-LG09F08x-D3-14
09 Jul. 2019
Marketing application voltage modified
1
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
34
09 Jul. 2019 / Revision 3
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