30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

flow 2 MNPC

1200 V / 200 A

Features

flow 2 13mm housing

● Mixed voltage NPC topology

● Reactive power capability

● Low inductance layout

● High speed IGBT and split output

● Common collector neutral connection

Target Applications

Schematic

● Solar inverter

● UPS

● Active frontend

Types

● 30-FT12NMA200SH-M660F08

● 30-PT12NMA200SH-M660F08Y

Maximum Ratings

T _j= 25 °C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

Half Bridge Sw. Protection Diode

Repetitive peak reverse voltage

DC forward current

V _RRM

I _F

I _FRM

P _tot

1200

25

V

A

T _j= T _jmax

T _s= 80 °C

t _p= 10 ms

Maximum repetitive forward current

Power dissipation

30

A

52

W

°C

T _jmax

Maximum Junction Temperature

150

Half Bridge Switch

V _CE

I _C

Collector-emitter breakdown voltage

1200

171

600

400

434

±20

V

A

T _j= T _jmax

T _s= 80 °C

DC collector current

I _CRM

t _plimited by T _jmax

Repetitive peak collector current

Turn off safe operation area

Power dissipation

A

V _CEmax = 1200V, T _vj≤ 150°C

T _j= T _jmax

A

P _tot

V _GE

T _s= 80 °C

W

V

Gate-emitter peak voltage

Short circuit ratings

t _SC

V _CC

T _j≤ 150 °C

V _GE= 15 V

10

µs

V

800

T _jmax

Maximum Junction Temperature

175

°C

copyright Vincotech

1

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Maximum Ratings

T _j= 25 °C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

Neutral Point FWD

V _RRM

I _F

I _FRM

P _tot

Peak Repetitive Reverse Voltage

700

87

V

A

T _j= T _jmax

T _s= 80 °C

DC forward current

t _plimited by T _jmax

T _j= T _jmax

Diode maximum forward current

Power dissipation

300

109

150

A

W

°C

T _jmax

Maximum Junction Temperature

Neutral Point Switch

V _CE

I _C

Collector-emitter breakdown voltage

600

124

450

198

±20

V

A

T _j= T _jmax

T _s= 80 °C

DC collector current

I _CRM

t _plimited by T _jmax

Repetitive peak collector current

Turn off safe operation area

Power dissipation

A

V _CE≤ 600V, T _j≤ 175°C

T _j= T _jmax

A

P _tot

V _GE

T _s= 80 °C

W

V

Gate-emitter peak voltage

Short circuit ratings

t _SC

V _CC

T _j≤ 150 °C

V _GE= 15 V

6

µs

V

360

T _jmax

Maximum Junction Temperature

175

°C

Neutral Point Sw. Protection Diode

V _RRM

I _F

I _FRM

P _tot

Peak Repetitive Reverse Voltage

600

49

V

A

T _j= T _jmax

T _s= 80 °C

DC forward current

t _plimited by T _jmax

T _j= T _jmax

Maximum repetitive forward current

Power dissipation

100

82

A

W

°C

T _jmax

Maximum Junction Temperature

175

Half Bridge FWD

V _RRM

I _F

Peak Repetitive Reverse Voltage

1200

84

V

A

T _j= T _jmax

T _s= 80 °C

DC forward current

I _FSM

P _tot

T _jmax

t _plimited by T _jmax

T _j= T _jmax

Nonrepetitive peak surge current

Power dissipation

540

186

175

A

W

°C

Maximum Junction Temperature

copyright Vincotech

2

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Maximum Ratings

T _j= 25 °C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

Thermal Properties

Storage temperature

T _stg

T _op

-40…+125

°C

-40…+(T _jmax- 25)

Operation temperature under switching condition

Isolation Properties

Isolation voltage

V _is

t = 2 s

DC Test Voltage

4000

min 12,7

>200

V

Creepage distance

Clearance

mm

Comparative tracking index

CTI

copyright Vincotech

3

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Characteristic Values

Conditions

Value

Typ

Parameter

Symbol

Unit

V _r[V] I _C[A]

V _GE[V]

V _GS[V]

V _CE[V] I _F[A]

V _DS[V] I _D[A]

T _j[°C]

Min

Max

Half Bridge Sw. Protection Diode

25

125

1,6

2,12

1,74

2,6

V _F

Forward voltage

15

V

Thermal grease

thickness ≤ 50um

λ = 1 W/mK

R _th(j-s)

Thermal resistance junction to sink

1,35

K/W

Half Bridge Switch

Gate emitter threshold voltage

Collector-emitter saturation voltage

Collector-emitter cut-off current incl. Diode

Gate-emitter leakage current

Integrated Gate resistor

Turn-on delay time

V _GE(th)

V _CEsat

I _CES

I _GES

R _gint

t _d(on)

t _r

V _CE= V _GE

0,0068

25

5,2

2

5,8

6,4

2,4

V

25

125

2,17

2,58

15

0

200

1200

0

25

24

µA

nA

Ω

20

480

1

25

125

25

125

25

125

25

125

25

125

25

124

126

27

Rise time

32

ns

190

234

41

t _d(off)

t _f

Turn-off delay time

R _goff= 2 Ω

R _gon= 2 Ω

±15

350

200

Fall time

61

2,38

4,20

5,02

7,97

E _on

Turn-on energy loss

mWs

pF

E _off

C _ies

C _oss

C _rss

Q _G

Turn-off energy loss

125

Input capacitance

11080

1150

640

Output capacitance

f

= 1 MHz

0

25

Reverse transfer capacitance

Gate charge

15

960

160

960

nC

Thermal grease

thickness ≤ 50um

λ = 1 W/mK

R _th(j-s)

Thermal resistance junction to sink

0,22

K/W

*additional value stands for built-in capacitor

Neutral Point FWD

Diode forward voltage

25

125

25

125

25

125

25

125

25

125

25

1,4

1,80

1,61

130

169

93

3,3

V _F

I _RRM

150

200

V

A

Peak reverse recovery current

Reverse recovery time

t _rr

ns

118

4,47

11,00

5241

1766

0,91

2,39

Q _rr

R _gon= 2 Ω

Reverse recovered charge

Peak rate of fall of recovery current

Reverse recovered energy

±15

350

µC

( di _rf/dt )_max

E _rec

A/µs

mWs

125

Thermal grease

thickness ≤ 50um

λ = 1 W/mK

R _th(j-s)

Thermal resistance junction to sink

0,64

K/W

copyright Vincotech

4

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Characteristic Values

Conditions

Value

Typ

Parameter

Symbol

Unit

V _r[V] I _C[A]

V _GE[V]

V _GS[V]

V _CE[V] I _F[A]

V _DS[V] I _D[A]

T _j[°C]

Min

Max

Neutral Point Switch

Gate emitter threshold voltage

Collector-emitter saturation voltage

Collector-emitter cut-off incl diode

Gate-emitter leakage current

Integrated Gate resistor

Turn-on delay time

V _GE(th)

V _CEsat

I _CES

I _GES

R _gint

t _d(on)

t _r

V _CE= V _GE

0,0024

25

5

5,8

6,5

V

25

125

1,05

1,57

1,68

1,85

15

0

150

600

0

25

7,6

µA

nA

Ω

20

1200

none

25

125

25

125

25

125

25

125

25

125

25

123

114

21

Rise time

21

ns

168

177

38

t _d(off)

t _f

Turn-off delay time

R _goff= 2 Ω

R _gon= 2 Ω

±15

350

150

Fall time

59

1,18

1,72

3,59

5,13

E _on

Turn-on energy loss

µWs

pF

E _off

C _ies

C _oss

C _rss

Q _G

Turn-off energy loss

125

Input capacitance

9240

576

274

940

Output capacitance

f

= 1 MHz

15

480

150

25

Reverse transfer capacitance

Gate charge

nC

Thermal grease

thickness ≤ 50um

λ = 1 W/mK

R _th(j-s)

Thermal resistance junction to sink

0,48

K/W

Neutral Point Sw. Protection Diod

25

1,20

1,78

1,70

1,90

V _F

Diode forward voltage

50

V

125

Thermal grease

thickness ≤ 50um

λ = 1 W/mK

R _th(j-s)

Thermal resistance junction to sink

1,16

K/W

Half Bridge FWD

Diode forward voltage

25

150

1,50

2,23

2,34

2,54

120

V _F

100

V

μA

I _r

I _RRM

Reverse leakage current

Peak reverse recovery current

Reverse recovery time

1200

350

25

150

25

150

25

150

25

150

25

150

184

216

48

A

t _rr

ns

114

6,62

12,94

11659

9489

1,62

3,42

Q _rr

R _gon= 2 Ω

Reverse recovered charge

Peak rate of fall of recovery current

Reverse recovery energy

±15

µC

( di _rf/dt )_max

E _rec

A/µs

mWs

Thermal grease

thickness ≤ 50um

λ = 1 W/mK

R _th(j-s)

Thermal resistance junction to sink

0,51

K/W

Thermistor

Rated resistance

Deviation of R ₁₀₀

Power dissipation

Power dissipation constant

B-value

R

Δ _R/R

P

25

100

25

22000

Ω

%

R ₁₀₀= 1486 Ω

-5

+5

200

2

mW

mW/K

K

B _(25/50)

Tol. ±3%

3950

3998

B _(25/100)

B-value

K

Vincotech NTC Reference

B

copyright Vincotech

5

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Half Bridge

Half Bridge IGBT and Neutral Point FWD

figure 1.

IGBT

figure 2.

IGBT

Typical output characteristics

I_C= f(V_CE

)

I_C= f(V_CE)

600

500

400

300

200

100

500

400

300

200

100

0

1

2

3

4

5

1

2

3

4

5

V_CE(V)

At

t_p

=

t_p=

250

25

μs

°C

250

125

μs

°C

T_j=

V_GEfrom

7 V to 17 V in steps of 1 V

figure 3.

IGBT

figure 4.

FWD

Typical transfer characteristics

Typical FWD forward current as

a function of forward voltage

I_F= f(V_F)

I_C= f(V_GE

)

200

500

400

300

200

100

160

120

80

T_j= T_jmax-25°C

T_j= 25°C

40

T_j= 25°C

T_j= T_jmax-25°C

0

0,5

1

1,5

2

2,5

3

2

4

6

8

10

12

V_GE(V)

V_F(V)

At

t_p

V_CE

T_j=

=

t_p

=

250

10

25/150

μs

V

250

μs

°C

=

T_j=

25/150

°C

copyright Vincotech

6

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Half Bridge

Half Bridge IGBT and Neutral Point FWD

figure 5.

IGBT

figure 6.

IGBT

Typical switching energy losses

as a function of collector current

E = f(I_C)

Typical switching energy losses

as a function of gate resistor

E = f(R_G)

16

12

8

16

12

8

E_{off High T}

E_{on High T}

E_{off Low T}

E_{on Low}

T

E_{off High T}

E_{on High T}

E_{off Low T}

4

E_{on Low T}

0

100

200

300

400

I _C(A)

R _G( Ω)

0

2

4

6

8

10

With an inductive load at

T_j=

25/125

350

±15

2

°C

V

25/125

350

°C

V

V_CE

=

V_CE

V_GE

=

V_GE

R_gon

R_goff

=

V

±15

V

=

I_C=

Ω

198

A

=

2

figure 7.

FWD

figure 8.

FWD

Typical reverse recovery energy loss

as a function of collector current

E_rec= f(I_c)

Typical reverse recovery energy loss

as a function of gate resistor

E_rec= f(R_G)

4

3

2

1

0

3,0

2,5

2,0

1,5

1,0

0,5

0,0

E_{rec High T}

E_{rec Low T}

0

100

200

300

400

0

2

4

6

8

10

I _C(A)

R _G( Ω)

With an inductive load at

T_j=

25/125

350

±15

2

°C

V

25/125

350

°C

V

V_CE

V_GE

R_gon

=

V_CE

V_GE

=

V

±15

V

=

I_C=

Ω

198

A

copyright Vincotech

7

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Half Bridge

Half Bridge IGBT and Neutral Point FWD

figure 9.

IGBT

figure 10.

IGBT

Typical switching times as a

function of collector current

t = f(I_C)

Typical switching times as a

function of gate resistor

t = f(R_G)

1,00

µ

µ µ

t_doff

t_don

t_doff

t_don

t_f

0,10

0,01

0,00

0,10

0,01

0,00

t_r

t_f

t_r

0

100

200

300

400

0

2

4

6

8

10

I _C(A)

R _G( Ω)

With an inductive load at

T_j=

125

350

±15

2

°C

V

125

350

±15

198

°C

V

V_CE

=

V_CE

V_GE

=

V_GE

R_gon

R_goff

=

V

=

I_C=

Ω

A

=

2

figure 11.

FWD

figure 12.

Typical reverse recovery time as a

function of IGBT turn on gate resistor

FWD

Typical reverse recovery time as a

function of collector current

t_rr= f(I_c)

t_rr= f(R_gon

)

0,25

0,20

0,15

0,10

0,05

0,00

0,25

t_{rr High T}

0,20

0,15

0,10

0,05

t_{rr High T}

t_{rr Low T}

0,00

0

2

4

6

8

10

0

100

200

300

400

I _C(A)

R _gon( Ω)

At

T_j=

V_R

25/125

350

±15

2

°C

V

25/125

350

°C

V

V_CE

V_GE

=

I_F=

V

198

A

R_gon

=

V_GE=

Ω

±15

V

copyright Vincotech

8

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Half Bridge

Half Bridge IGBT and Neutral Point FWD

figure 13.

FWD

figure 14.

FWD

Typical reverse recovery charge as a

function of collector current

Q_rr= f(I_C)

Typical reverse recovery charge as a

function of IGBT turn on gate resistor

Q_rr= f(R_gon

)

20

12

µ

Q_{rr High T}

10

8

16

12

8

6

Q_{rr Low T}

4

Q_{rr Low T}

4

2

0

100

200

300

400

0

2

4

6

8

10

R _gon( Ω)

I _C(A)

At

T_j=

At

T_j=

25/125

°C

V

25/125

350

°C

V

V_CE

V_GE

R_gon

=

V_R=

350

±15

2

=

I_F=

V

198

A

=

V_GE

=

Ω

±15

V

figure 15.

FWD

figure 16.

FWD

Typical reverse recovery current as a

function of collector current

I_RRM= f(I_C)

Typical reverse recovery current as a

function of IGBT turn on gate resistor

I_RRM= f(R_gon

)

250

200

150

100

50

I_{RRM High T}

200

150

100

50

I_{RRM Low T}

I_{RRM High T}

I_{RRM Low T}

0

100

200

300

400

2

4

6

8

10

I _C(A)

R _gon( Ω)

At

T_j=

At

T_j=

V_R

25/125

°C

V

25/125

350

°C

V

V_CE

V_GE

R_gon

=

350

±15

2

=

I_F=

V

198

A

=

V_GE=

Ω

±15

V

copyright Vincotech

9

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Half Bridge

Half Bridge IGBT and Neutral Point FWD

figure 17.

FWD

figure 18.

FWD

Typical rate of fall of forward

and reverse recovery current as a

function of collector current

dI₀/dt,dI_rec/dt = f(I_c)

Typical rate of fall of forward

and reverse recovery current as a

function of IGBT turn on gate resistor

dI₀/dt,dI_rec/dt = f(R_gon

)

12000

dI_o/dt _T

dI₀/dt _T

dI_rec/dt _T

10000

8000

6000

4000

2000

0

8000

6000

4000

2000

0

100

200

300

400

0

2

4

6

8

10

R

_gon( Ω)

I

_C(A)

At

T_j=

25/125

350

±15

2

°C

25/125

350

°C

V_CE

V_GE

R_gon

=

V_R=

V

Ω

V

A

V

=

I_F=

198

=

V_GE=

±15

figure 19.

IGBT

figure 20.

FWD

IGBT transient thermal impedance

FWD transient thermal impedance

as a function of pulse width

Z_th(j-s)= f(t_p)

10¹

10⁰

10^-1

10^-2

10^-3

10^-1

10^-2

10^-3

D = 0,5

0,2

D = 0,5

0,2

0,1

0,05

0,02

0,01

0,005

0.000

0,1

0,05

0,02

0,01

0,005

0.000

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

t _p(s)

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

At

t_p/ T

D =

R_th(j-s)

=

R_th(j-s)=

0,22

K/W

0,64

K/W

IGBT thermal model values

FWD thermal model values

R (K/W) Tau (s)

0,04

0,05

0,04

0,07

0,02

0,01

4,0E+00

9,4E-01

2,3E-01

5,4E-02

1,6E-02

2,8E-03

0,09

0,11

0,16

0,23

0,03

4,6E+00

1,2E+00

1,8E-01

3,8E-02

5,8E-03

7,4E-04

copyright Vincotech

10

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Half Bridge

Half Bridge IGBT and Neutral Point FWD

figure 21.

IGBT

figure 22.

IGBT

Power dissipation as a

function of heatsink temperature

P_tot= f(T_s)

Collector current as a

function of heatsink temperature

I_C= f(T_s)

800

600

400

200

0

250

200

150

100

50

0

^oC)

T _h(

^oC)

0

50

100

150

200

0

50

100

150

200

T _h

(

At

T_j=

175

°C

175

15

°C

V

V_GE

=

figure 23.

Power dissipation as a

FWD

figure 24.

Forward current as a

FWD

function of heatsink temperature

P_tot= f(T_s)

I_F= f(T_s)

250

200

150

100

50

150

125

100

75

50

25

0

50

100

150

200

^oC)

T _h(

^oC)

0

50

100

150

200

T _h

(

At

T_j=

150

°C

150

°C

copyright Vincotech

11

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Half Bridge

Half Bridge IGBT and Neutral Point FWD

figure 25.

IGBT

figure 26.

IGBT

Safe operating area as a function

of collector-emitter voltage

Gate voltage vs Gate charge

I_C= f(V_CE

)

V_GE= f(Q_g)

20

18

10³

240V

16

14

12

10

8

100uS

960V

1mS

10²

10mS

100mS

10¹

DC

10⁰

6

4

10^-1

2

0

400

800

1200

1600

2000

10²

10³

Q _g(nC)

10¹

10⁰

V_CE(V)

At

D =

single pulse

I_D

=

160

25

A

T_s

=

80

ºC

T_j=

ºC

V_GE

=

±15

T_jmax

V

T_j=

ºC

figure 27.

IGBT

figure 28.

IGBT

Short circuit withstand time as a function of

gate-emitter voltage

Typical short circuit collector current as a function of

gate-emitter voltage

t_sc= f(V_GE

)

I_C(sc)= f(V_GE)

16

2400

14

12

10

8

2000

1600

1200

800

6

4

400

2

0

12

13

14

15

16

17

12

14

16

18

20

V _GE(V)

V_GE(V)

At

V_CE

=

1200

175

V

V_CE

≤

1200

175

V

T_j≤

T_j=

ºC

copyright Vincotech

12

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Half Bridge

Half Bridge IGBT and Neutral Point FWD

figure 27.

IGBT

Reverse bias safe operating area

I_C= f(V_CE

)

450

I_{C MAX}

400

350

300

250

200

150

100

50

0

200

400

600

800

1000

1200

V_CE(V)

1400

At

T_j=

T_jmax-25

ºC

U_ccminus=U_ccplus

Switching mode :

3 level switching

copyright Vincotech

13

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Neutral Point

Neutral Point IGBT and Half Bridge FWD

figure 1.

IGBT

figure 2.

IGBT

Typical output characteristics

I_C= f(V_CE

)

I_C= f(V_CE)

450

375

300

225

150

75

375

300

225

150

75

0

1

2

3

4

5

1

2

3

4

5

V_CE(V)

At

t_p

=

t_p=

250

μs

°C

7 V to 17 V in steps of 1 V

250

μs

°C

7 V to 17 V in steps of 1 V

T_j=

25

150

V_GEfrom

figure 3.

IGBT

figure 4.

FWD

Typical transfer characteristics

Typical FWD forward current as

a function of forward voltage

I_F= f(V_F)

I_C= f(V_GE

)

150

300

250

200

150

100

125

100

75

50

T_j= 25°C

T_j= T_jmax-25°C

25

50

T_j= T_jmax-25°C

T_j= 25°C

0

2

4

6

8

10

12

0

1

2

3

4

5

V_GE(V)

V_F(V)

At

t_p

V_CE

T_j=

=

t_p

=

250

μs

V

250

25/150

μs

°C

=

T_j=

0

25/150

°C

copyright Vincotech

14

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Neutral Point

Neutral Point IGBT and Half Bridge FWD

figure 5.

IGBT

figure 6.

IGBT

Typical switching energy losses

as a function of collector current

E = f(I_C)

Typical switching energy losses

as a function of gate resistor

E = f(R_G)

8

6

4

2

0

8

6

4

2

0

E_{off High T}

E_{on High T}

E_{off Low T}

E_{off High T}

E_{on Low T}

E_{off Low T}

E_{on High T}

E_{on Low T}

0

50

100

150

200

250

300

0

2

4

6

8

10

I

_C(A)

R _G( Ω)

With an inductive load at

T_j=

25/126

350

±15

2

°C

V

25/126

350

°C

V

V_CE

=

V_CE

V_GE

=

V_GE

R_gon

R_goff

=

V

±15

V

=

I_C=

Ω

151

A

=

2

figure 7.

FWD

figure 8.

FWD

Typical reverse recovery energy loss

as a function of collector current

E_rec= f(I_c)

Typical reverse recovery energy loss

as a function of gate resistor

E_rec= f(R_G)

5

4

3

2

1

0

5

4

3

2

1

0

E_{rec High T}

E_{rec Low T}

0

50

100

150

200

250

300

0

2

4

6

8

10

I _C(A)

R _G( Ω)

With an inductive load at

T_j=

25/126

350

±15

2

°C

V

25/126

350

°C

V

V_CE

V_GE

R_gon

=

V_CE

V_GE

=

V

±15

V

=

I_C=

Ω

151

A

copyright Vincotech

15

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Neutral Point

Neutral Point IGBT and Half Bridge FWD

figure 9.

IGBT

figure 10.

IGBT

Typical switching times as a

function of collector current

t = f(I_C)

Typical switching times as a

function of gate resistor

t = f(R_G)

1

t_doff

t_don

t_doff

t_don

0,1

t_f

t_r

t_f

0,01

t_r

0,001

0

2

4

6

8

10

0

50

100

150

200

250

300

I _C(A)

R _G( Ω)

With an inductive load at

T_j=

126

350

±15

2

°C

V

126

350

±15

151

°C

V

V_CE

=

V_CE

V_GE

=

V_GE

R_gon

R_goff

=

V

=

I_C=

Ω

A

=

2

figure 11.

FWD

figure 12.

Typical reverse recovery time as a

function of IGBT turn on gate resistor

FWD

Typical reverse recovery time as a

function of collector current

t_rr= f(I_c)

t_rr= f(R_gon

)

0,15

0,12

0,09

0,06

0,03

0,00

0,4

t_{rr High T}

0,3

0,2

0,1

t_{rr Low T}

0

2

4

6

8

10

0

50

100

150

200

250

300

I _C(A)

R _gon( Ω)

At

T_j=

At

T_j=

V_R

25/126

350

±15

2

°C

25/126

350

°C

V

V_CE

V_GE

R_gon

=

V

Ω

=

I_F=

151

A

=

V_GE=

±15

V

copyright Vincotech

16

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Neutral Point

Neutral Point IGBT and Half Bridge FWD

figure 13.

FWD

figure 14.

FWD

Typical reverse recovery charge as a

function of collector current

Q_rr= f(I_C)

Typical reverse recovery charge as a

function of IGBT turn on gate resistor

Q_rr= f(R_gon

)

18

15

12

9

15

Q_{rr High T}

12

9

Q_{rr Low T}

6

3

0

50

100

150

200

250

300

2

4

6

8

10

I _C(A)

R _gon( Ω)

At

T_j=

V_R

25/126

350

±15

2

°C

V

25/126

350

°C

V

V_CE

V_GE

R_gon

=

I_F=

V

151

A

=

V_GE=

Ω

±15

V

figure 15.

FWD

figure 16.

FWD

Typical reverse recovery current as a

function of collector current

I_RRM= f(I_C)

Typical reverse recovery current as a

function of IGBT turn on gate resistor

I_RRM= f(R_gon

)

300

250

200

150

100

50

250

I_{RRM High T}

200

150

100

50

I_{RRM Low T}

I_{RRM High T}

I_{RRM Low T}

0

50

100

150

200

250

300

2

4

6

8

10

I _C(A)

R _gon( Ω)

At

T_j=

V_R

25/126

350

±15

2

°C

25/126

350

°C

V

V_CE

V_GE

=

V

Ω

I_F=

151

A

R_gon

=

V_GE=

±15

V

copyright Vincotech

17

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Neutral Point

Neutral Point IGBT and Half Bridge FWD

figure 17.

FWD

figure 18.

FWD

Typical rate of fall of forward

and reverse recovery current as a

function of collector current

dI₀/dt,dI_rec/dt = f(I_c)

Typical rate of fall of forward

and reverse recovery current as a

function of IGBT turn on gate resistor

dI₀/dt,dI_rec/dt = f(R_gon

)

15000

18000

dI_rec/dt _T

d_Irec/dt_T

dI_o/dt _T

dI₀/dt_T

15000

12000

9000

6000

3000

0

9000

6000

3000

0

50

100

150

200

250

300

0

2

4

6

8

10

R _gon( Ω)

I _C(A)

At

T_j=

25/126

350

±15

2

°C

V

25/126

350

°C

V_CE

V_GE

R_gon

=

V_R=

V

A

V

=

I_F=

V

151

=

V_GE=

Ω

±15

figure 19.

IGBT

figure 20.

FWD

IGBT transient thermal impedance

FWD transient thermal impedance

as a function of pulse width

Z_th(j-s)= f(t_p)

10¹

10⁰

10^-1

10^-2

10^-3

10^-1

10^-2

10^-3

D = 0,5

0,2

D = 0,5

0,2

0,1

0,05

0,02

0,01

0,005

0.000

0,05

0,02

0,01

0,005

0.000

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

1

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

1

t _p(s)

At

t_p/ T

D =

R_th(j-s)

=

R_th(j-s)=

0,48

K/W

0,51

K/W

IGBT thermal model values

FWD thermal model values

R (K/W) Tau (s)

0,09

0,11

0,10

0,15

0,02

4,40

0,76

0,13

0,03

0,01

0,06

0,08

0,20

0,14

0,04

3,05

0,45

0,09

0,03

0,004

copyright Vincotech

18

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Neutral Point

Neutral Point IGBT and Half Bridge FWD

figure 21.

IGBT

figure 22.

IGBT

Power dissipation as a

function of heatsink temperature

P_tot= f(T_s)

Collector current as a

function of heatsink temperature

I_C= f(T_s)

400

300

200

100

0

200

150

100

50

0

50

100

150

200

^oC)

T _h(

^oC)

0

50

100

150

200

T _h

(

At

T_j=

175

ºC

175

15

ºC

V

V_GE

=

figure 23.

Power dissipation as a

FWD

figure 24.

Forward current as a

FWD

function of heatsink temperature

P_tot= f(T_s)

I_F= f(T_s)

350

300

250

200

150

100

50

150

125

100

75

50

25

0

50

100

150

200

(

^oC)

Th

(

^oC)

Th

0

50

100

150

200

At

T_j=

175

ºC

175

ºC

copyright Vincotech

19

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Neutral Point

neutral point IGBT

figure 25.

IGBT

figure 26.

IGBT

Reverse bias safe operating area

Gate voltage vs Gate charge

I_C= f(V_CE

)

V_GE= f(Q_g)

500

16

14

12

10

8

I_{C MAX}

400

300

200

100

120V

480V

6

4

2

0

100

200

300

400

500

600

700

0

200

400

600

800

1000

Q _g(nC)

V

_CE(V)

At

T_j=

T_jmax-25

ºC

3 level switching

I_D

=

150

25

A

U_ccminus=U_ccplus

T_j=

ºC

Switching mode :

figure 27.

IGBT

figure 28.

IGBT

Short circuit withstand time as a function of

gate-emitter voltage

Typical short circuit collector current as a function of

gate-emitter voltage

t_sc= f(V_GE

)

I_C(sc)= f(V_GE)

12

2500

10

8

2000

1500

1000

500

6

4

2

0

10

11

12

13

14

15

12

14

16

18

20

V _GE(V)

V_GE(V)

At

V_CE

≤

400

150

V

V_CE

≤

400

150

V

T_j≤

T_j=

ºC

copyright Vincotech

20

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Neutal Point IGBT Inverse Diode

figure 25.

IGBT

figure 26.

IGBT

Typical FWD forward current as

a function of forward voltage

I_F= f(V_F)

FWD transient thermal impedance

as a function of pulse width

Z_th(j-s)= f(t_p)

10¹

10⁰

10^-1

10^-2

200

160

120

80

D = 0,5

0,2

0,1

0,05

0,02

0,01

0,005

0.000

40

T_j= T_jmax-25°C

T_j= 25°C

0

1

2

3

4

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹1

V_F(V)

t _p(s)

At

t_p

=

t_p/ T

250

μs

D =

R_th(j-s)

=

1,16

K/W

figure 27.

Power dissipation as a

IGBT

figure 28.

Forward current as a

IGBT

function of heatsink temperature

P_tot= f(T_s)

I_F= f(T_s)

80

60

40

20

0

175

150

125

100

75

50

25

0

50

100

150

200

^oC)

Th (

^oC)

0

50

100

150

200

Th

(

At

T_j=

175

ºC

175

ºC

copyright Vincotech

21

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Half Bridge Inverse Diode

figure 1.

IGBT

figure 2.

IGBT

Typical FWD forward current as

a function of forward voltage

I_F= f(V_F)

FWD transient thermal impedance

as a function of pulse width

Z_th(j-s)= f(t_p)

10¹

10⁰

10^-1

10^-2

75

60

45

30

D = 0,5

0,2

0,1

0,05

0,02

0,01

0,005

15

T_j= T_jmax-25°C

T_j= 25°C

0

0.000

0

1

2

3

4

V_F(V)

t _p(s)

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹1

At

t_p

=

t_p/ T

250

μs

D =

R_th(j-s)

=

1,35

K/W

figure 3.

Power dissipation as a

IGBT

figure 4.

Forward current as a

IGBT

function of heatsink temperature

P_tot= f(T_s)

I_F= f(T_s)

120

100

80

60

40

20

0

35

30

25

20

15

10

5

0

50

100

150

200

^oC)

T _h(

^oC)

0

50

100

150

200

T _h

(

At

T_j=

150

ºC

150

ºC

copyright Vincotech

22

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Thermistor

figure 1.

Thermistor

Typical NTC characteristic

as a function of temperature

RT = f(T)

NTC-typical temperature characteristic

24000

20000

16000

12000

8000

4000

0

25

50

75

100

T (°C)

125

copyright Vincotech

23

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Switching Definitions Half Bridge

General conditions

T _j

=

125 °C

2 Ω

R _gon

R _goff

figure 1.

IGBT

figure 2.

IGBT

Turn-off Switching Waveforms & definition of t _doff, t _Eoff

Turn-on Switching Waveforms & definition of t _don, t _Eon

(t _{E off}= integrating time for E _off

)

(t _{E on}= integrating time for E _on)

125

200

I_C

t_doff

%

100

150

V_{GE 90%}

I_C

75

V_GE

100

50

0

V_GE

V_{CE 90%}

V_CE

50

25

0

t_don

t_Eoff

V_CE

I_{C 1%}

V_CE5%

V_GE10%

I_C10%

t_Eon

-25

-50

-0,2

0

0,2

0,4

0,6

2,95

3,05

3,15

3,25

3,35

3,45

time(us)

time (us)

V_GE(0%) =

-15

15

V

V_GE(0%) =

-15

15

V

A

V_GE(100%) =

V_C(100%) =

I_C(100%) =

V

V_GE(100%) =

V_C(100%) =

I_C(100%) =

700

198

0,23

0,61

V

700

198

0,13

0,30

A

t_doff

=

μs

t_don

=

μs

t_{E off}

=

t_{E on}=

figure 3.

IGBT

figure 4.

IGBT

Turn-off Switching Waveforms & definition of t _f

Turn-on Switching Waveforms & definition of t _r

130

200

I_c

fitted

%

I_C

100

150

I_{C 90%}

70

40

100

I_{C 60%}

I_C90%

V_CE

t_r

V_CE

50

I_{C 40%}

I_C10%

10

0

I_C10%

t_f

-20

-50

0,1

0,15

0,2

0,25

0,3

0,35

0,4

3,1

3,15

3,2

3,25

3,3

time (us)

time(us)

V_C(100%) =

I_C(100%) =

t_f=

700

198

0,06

V

V_C(100%) =

I_C(100%) =

t_r=

700

198

0,03

V

A

μs

copyright Vincotech

24

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Switching Definitions Half Bridge

figure 5.

IGBT

figure 6.

IGBT

Turn-off Switching Waveforms & definition of t _Eoff

Turn-on Switching Waveforms & definition of t _Eon

125

%

125

%

I_C

1%

E_on

E_off

100

75

50

25

0

100

75

50

25

P_on

P_off

V_CE3%

V_GE90%

V_GE10%

0

t_Eoff

t_Eon

-25

2,9

3

3,1

3,2

3,3

3,4

3,5

-0,2

0

0,2

0,4

0,6

0,8

time (us)

time(us)

P_off(100%) =

E_off(100%) =

138,85

7,97

kW

P_on(100%) =

E_on(100%) =

138,85

4,20

kW

mJ

μs

mJ

μs

t_{E off}

=

0,61

t_{E on}

=

0,30

figure 7.

FWD

figure 8.

FWD

Turn-off Switching Waveforms & definition of t _rr

Turn-on Switching Waveforms & definition of t _Qrr

(t_Qrr= integrating time for Q_rr)

150

%

150

%

I_d

Q_rr

I_d

100

t_rr

50

t_Qrr

50

V_d

0

I

10%

RRM

fitted

0

-50

I_{RRM 90%}

I_RRM100%

-50

-100

-150

3,1

3,14

3,18

3,22

3,26

3,3

3,34

3,1

3,2

3,3

3,4

3,5

time(us)

V_d(100%) =

I_d(100%) =

I_RRM(100%) =

700

V

I_d(100%) =

Q_rr(100%) =

198

A

198

A

11,00

0,24

μC

μs

-169

0,12

A

t_{Q rr}=

t_rr

=

μs

copyright Vincotech

25

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Switching Definitions Half Bridge

figure 9.

FWD

Turn-on Switching Waveforms & definition of t _Erec

(t _Erec= integrating time for E _rec

)

150

%

E_rec

100

t_Erec

50

P_rec

0

-50

3,1

3,2

3,3

3,4

3,5

time(us)

P_rec(100%) =

E_rec(100%) =

138,85

2,39

kW

mJ

μs

t_{E rec}

=

0,24

Half Bridge switching measurement circuit

figure 11.

IGBT

copyright Vincotech

26

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Switching Definitions Neutral Point IGBT

General conditions

T _j

=

125 °C

4 Ω

R _gon

R _goff

figure 1.

Neutral Point IGBT

figure 2.

Neutral Point IGBT

Turn-off Switching Waveforms & definition of t _doff, t _Eoff

Turn-on Switching Waveforms & definition of t _don, t _Eon

(t _{E off}= integrating time for E _off

)

(t _{E on}= integrating time for E _on)

125

250

%

t_doff

%

I_C

200

150

100

V_GE90%

I_C

75

V_GE

V_CE

V_GE

50

V_CE90%

t_Eoff

V_CE

t_don

50

0

25

0

I_C1%

V_CE3%

V_{GE 10%}

I_{C 10%}

t_Eon

-50

-25

3,95

4

4,05

4,1

4,15

4,2

4,25

-0,2

0

0,2

0,4

0,6

time (us)

time(us)

V_GE(0%) =

-15

15

V

V_GE(0%) =

-15

15

V

V_GE(100%) =

V_C(100%) =

I_C(100%) =

V

V_GE(100%) =

V_C(100%) =

I_C(100%) =

V

700

151

0,18

0,46

V

700

151

0,11

0,19

V

A

t_doff

=

μs

t_don

=

μs

t_{E off}

=

t_{E on}=

figure 3.

Neutral Point IGBT

figure 4.

Neutral Point IGBT

Turn-off Switching Waveforms & definition of t _f

Turn-on Switching Waveforms & definition of t _r

125

250

fitted

I_c

%

100

200

I_c

90%

75

150

V_CE

I_c

60%

50

100

I_C90%

I_{c 40%}

t_r

V_CE

25

50

I_C

I_{c 10%}

I_C10%

0

t_f

-25

-50

0,05

0,10

0,15

0,20

0,25

0,30

4,05

4,1

4,15

4,2

4,25

time (us)

time(us)

V_C(100%) =

I_C(100%) =

t_f=

700

151

V

V_C(100%) =

I_C(100%) =

t_r=

700

V

A

151

A

0,064

μs

0,019

μs

copyright Vincotech

27

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Switching Definitions Neutral Point IGBT

figure 5.

Neutral Point IGBT

figure 6.

Neutral Point IGBT

Turn-off Switching Waveforms & definition of t _Eoff

Turn-on Switching Waveforms & definition of t _Eon

125

%

Ic 1%

E_off

100

75

E_on

50

25

P_off

P_on

U_{ge 90%}

U_{ge 10%}

U_{ce 3%}

0

t_Eoff

t_Eon

-25

-0,2

0

0,2

0,4

0,6

3,95

4

4,05

4,1

4,15

4,2

4,25

time(us)

time (us)

P_off(100%) =

E_off(100%) =

69,93

3,32

0,44

kW

mJ

μs

P_on(100%) =

E_on(100%) =

69,93

1,52

0,18

kW

mJ

μs

t_{E off}

=

t_{E on}=

figure 7.

Half Bridge FWD

figure 8.

Half Bridge FWD

Turn-on Switching Waveforms & definition of t _Qrr

Turn-off Switching Waveforms & definition of t _rr

150

%

Q_rr

I_d

100

t_rr

t_Qint

50

U_d

fitted

0

-50

I_{RRM 10%}

-50

-100

-150

I_{RRM 90%}

I_{RRM 100%}

-150

4,05

4,1

4,15

4,2

4,25

4,3

4

4,1

4,2

4,3

4,4

time(us)

V_d(100%) =

I_d(100%) =

I_RRM(100%) =

700

V

I_d(100%) =

Q_rr(100%) =

151

A

151

A

12,71

1,00

μC

μs

-142

0,07

A

t_Qint=

t_rr

=

μs

copyright Vincotech

28

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Switching Definitions Neutral Point IGBT

figure 9.

Half Bridge FWD

Turn-on Switching Waveforms & definition of t _Erec

(t _Erec= integrating time for E _rec

)

125

%

E_rec

100

t_Erec

75

50

25

0

P_rec

-25

4,1

4,15

4,2

4,25

4,3

4,35

4,4

time(us)

P_rec(100%) =

E_rec(100%) =

69,93

3,61

1,00

kW

mJ

μs

t_{E rec}

=

Neutral Point IGBT switching measurement circuit

figure 10.

Neutral Point IGBT

copyright Vincotech

29

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Ordering Code and Marking - Outline - Pinout

Ordering Code & Marking

Version

Ordering Code

in DataMatrix as

M660F08

in packaging barcode as

without thermal paste with solder pins

with thermal paste and solder pins

without thermal paste with Press-fit pins

with thermal paste and Press-fit pins

30-FT12NMA200SH-M660F08

30-FT12NMA200SH-M660F08-/3/

30-PT12NMA200SH-M660F08Y

30-PT12NMA200SH-M660F08Y-/3/

M660F08

M660F08-/3/

M660F08Y

M660F08Y-/3/

Outline

copyright Vincotech

30

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Pinout

Identification

Current

ID

Component

Voltage

Function

Comment

T1, T3

D1, D3

D5, D7

T2, T4

D6, D8

D2, D4

R1

IGBT

FWD

1200V

700V

200A

Half Bridge IGBT

15A

150A

100A

50A

HB IGBT Inverse Diode

Neutral Point FWD

Neutral Point IGBT

Half Bridge FWD

NP IGBT Inverse Diode

Resistor

FWD

IGBT

FWD

600V

1200V

600V

FWD

Resistor

copyright Vincotech

31

08 Apr. 2017 / Revision 3

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Packaging instruction

Standard packaging quantity (SPQ)

>SPQ

Standard

<SPQ

Sample

36

Handling instruction

Handling instructions for flow 2 packages see vincotech.com website.

Package data

Package data for flow 2 packages see vincotech.com website.

UL recognition and file number

This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.

Document No.:

Date:

Modification:

Pages

31

30-FT12NMA200SH-M660F08-D3-14

19 Mar. 2018

Pin number corrected on schematic

DISCLAIMER

The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in

good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or

occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No

representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use

of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third

parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s

intended use.

LIFE SUPPORT POLICY

Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of

Vincotech.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c)

whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in

significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of

the life support device or system, or to affect its safety or effectiveness.

copyright Vincotech

32

08 Apr. 2017 / Revision 3


型号：	30-FT12NMA200SH-M660F08
厂家：	VINCOTECH
描述：	Easy paralleling;High speed switching;Low switching losses
文件：	总32页 (文件大小：1411K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

30-FT12NMA200SH-M660F08 [VINCOTECH]

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