70-W424NIA800M7-M800F7 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
| 型号： | 70-W424NIA800M7-M800F7 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
| 文件： | 总30页 (文件大小：5095K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
70-W424NIA800M7-M800F70
datasheet
VINcoNPC X8
2400 V / 800 A
Features
flowscrew 4w 12 mm housing
● Three-level topology for 1500Vdc applications
● High power screw interface
● Low inductive package
● Integrated snubber diode for optional asymmetrical inductance
● Temperature sensor
Schematic
Target applications
● Solar inverter
● Wind Power
● Motor Drive
Types
● 70-W424NIA800M7-M800F70
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Switch
VCES
IC
Collector-emitter voltage
1200
829
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Ptot
VGES
tSC
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
1600
1536
±20
9,5
A
W
V
Short circuit ratings
VGE = 15 V
Vcc = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
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09 Dec. 2019 / Revision 1
70-W424NIA800M7-M800F70
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
542
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
1600
884
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
175
Boost Switch
VCES
IC
Collector-emitter voltage
1200
829
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
Ptot
VGES
tSC
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
1600
1536
±20
9,5
A
W
V
Short circuit ratings
VGE = 15 V
Vcc = 800 V Tj = 150 °C
µs
°C
Tjmax
Maximum junction temperature
175
Boost Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
542
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
1600
884
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
175
Boost Sw.Inv.Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
542
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
1600
884
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
09 Dec. 2019 / Revision 1
70-W424NIA800M7-M800F70
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Boost Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
1200
68
V
A
IF
IFSM
I2t
Tj = Tjmax
Ts = 80 °C
260
336
181
175
A
50 Hz Single Half Sine Wave
tp = 8,3 ms
A2s
W
°C
Ptot
Tjmax
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Maximum junction temperature
Snubber Diode
VRRM
IF
IFSM
I2t
Ptot
Tjmax
Peak repetitive reverse voltage
1200
283
V
A
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
1080
A
50 Hz Single Half Sine Wave
tp = 8,3 ms
A2s
W
°C
Total power dissipation
Tj = Tjmax
749
175
Maximum junction temperature
Module Properties
Thermal Properties
Tstg
Storage temperature
-40…+125
°C
Operation temperature under switching condition
Maximum allowed PCB temperature
Isolation Properties
Tjop
-40…(Tjmax - 25)
°C
°C
TPCB
125
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
Clearance
min. 12,7
min. 12,7
> 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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09 Dec. 2019 / Revision 1
70-W424NIA800M7-M800F70
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,08
800
25
5,4
6
6,6
V
V
25
1,53
1,70
1,75
1,85
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
800
µA
nA
Ω
20
4000
none
168000
5600
Cies
Coes
Cres
Qg
Output capacitance
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
2240
15
600
800
5600
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,06
K/W
Dynamic
25
183
167
165
td(on)
125
150
25
Turn-on delay time
68
tr
Rise time
125
150
25
67
70
416
Rgon = 1 Ω
Rgoff = 1 Ω
ns
td(off)
Turn-off delay time
Fall time
125
150
25
125
150
25
125
150
25
397
390
63
68
-8 / 16
600
1440
tf
74
130,000
153,000
160,000
79,500
Qr
FWD
Qr
FWD
Qr
FWD
= 107 μC
= 161 μC
= 173 μC
Eon
Turn-on energy (per pulse)
mWs
Eoff
Turn-off energy (per pulse)
125
150
100,000
107,000
Copyright Vincotech
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09 Dec. 2019 / Revision 1
70-W424NIA800M7-M800F70
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Diode
Static
25
800
1,82
1,96
2,1
VF
IR
Forward voltage
Reverse leakage current
Thermal
V
125
25
320
1200
150
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,11
K/W
Dynamic
25
800
872
899
361
499
528
IRRM
125
150
25
125
150
Peak recovery current
A
trr
Reverse recovery time
Recovered charge
ns
di/dt = 16300 A/
di/dt = 19100 A/
di/dt = 18800 A/
25
107,000
161,000
173,000
Qr
-8 / 16
600
1440
125
150
μC
25
37,000
59,200
63,900
9460
Erec
Reverse recovered energy
125
150
25
mWs
(dirf/dt)max
Peak rate of fall of recovery current
A/µs
125
150
8200
7870
Copyright Vincotech
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09 Dec. 2019 / Revision 1
70-W424NIA800M7-M800F70
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,08
800
25
5,4
6
6,6
V
V
25
1,53
1,70
1,75
1,85
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
800
µA
nA
Ω
20
4000
none
168000
5600
Cies
Coes
Cres
Qg
Output capacitance
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
2240
15
600
800
5600
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,06
K/W
Dynamic
25
161
158
153
td(on)
125
150
25
Turn-on delay time
37
tr
Rise time
125
150
25
40
41
483
Rgon = 1 Ω
Rgoff = 1 Ω
ns
td(off)
Turn-off delay time
Fall time
125
150
25
125
150
25
125
150
25
487
485
69
96
-8 / 16
600
800
tf
101
48,100
58,300
64,200
56,500
Qr
FWD
Qr
FWD
Qr
FWD
= 74,3 μC
= 119 μC
= 135 μC
Eon
Turn-on energy (per pulse)
mWs
Eoff
Turn-off energy (per pulse)
125
150
71,700
78,300
Copyright Vincotech
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09 Dec. 2019 / Revision 1
70-W424NIA800M7-M800F70
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Diode
Static
25
800
1,82
1,96
2,1
VF
IR
Forward voltage
Reverse leakage current
Thermal
V
125
25
320
1200
150
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,11
K/W
Dynamic
25
734
846
879
256
363
402
IRRM
125
150
25
125
150
Peak recovery current
A
trr
Reverse recovery time
Recovered charge
ns
di/dt = 15900 A/
di/dt = 21900 A/
di/dt = 17800 A/
25
74,300
119,000
135,000
Qr
-8 / 16
600
800
125
150
μC
25
25,800
45,300
51,700
9340
Erec
Reverse recovered energy
125
150
25
mWs
(dirf/dt)max
Peak rate of fall of recovery current
A/µs
125
150
7650
6600
Boost Sw.Inv.Diode
Static
25
1,82
1,96
2,1
VF
IR
Forward voltage
Reverse leakage current
Thermal
800
V
125
25
320
1200
µA
150
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,11
K/W
Copyright Vincotech
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09 Dec. 2019 / Revision 1
70-W424NIA800M7-M800F70
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Sw. Protection Diode
Static
25
2,37
2,47
2,71
VF
IR
Forward voltage
Reverse leakage current
Thermal
60
V
125
25
240
1200
150
µA
7200
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,53
K/W
Snubber Diode
Static
25
200
2,21
2,31
2,54
VF
IR
Forward voltage
Reverse leakage current
Thermal
V
125
25
240
1200
150
µA
35200
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,13
22
K/W
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
8
09 Dec. 2019 / Revision 1
70-W424NIA800M7-M800F70
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
2400
2400
VGE
:
7
V
V
V
I
I
8
9
2000
2000
10
11
12
13
14
15
16
17
V
V
V
V
V
V
V
V
1600
1200
800
400
0
1600
1200
800
400
0
0
0
1
2
3
4
5
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
V
Tj:
Tj =
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
10-1
800
I
Z
600
10-2
400
200
0,5
10-3
0,2
0,1
0,05
0,02
0,01
0,005
0
10-4
10-5
0
0
10-4
10-3
10-2
10-1
100
101
tp(s)
102
2
4
6
8
10
12
VG E (V)
tp
=
250
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
0,06
K/W
IGBT thermal model values
R (K/W)
τ (s)
7,38E-03
1,16E-02
1,14E-02
2,25E-02
5,89E-03
1,30E-03
1,87E-03
5,64E+00
1,21E+00
2,33E-01
4,98E-02
1,55E-02
2,19E-03
5,19E-04
Copyright Vincotech
9
09 Dec. 2019 / Revision 1
70-W424NIA800M7-M800F70
datasheet
Buck Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
10000
I
1ms
10µs
100ms
10ms
100µs
DC
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
VC E (V)
D =
single pulse
80
Ts
=
ºC
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
10
09 Dec. 2019 / Revision 1
70-W424NIA800M7-M800F70
datasheet
Buck Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
2400
2000
1600
1200
800
400
0
Z
10-1
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
5
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
0,11
Tj:
R th(j-s)
=
K/W
FWD thermal model values
R (K/W)
τ (s)
7,54E-03
1,57E-02
2,42E-02
3,71E-02
1,34E-02
3,30E-03
6,17E-03
5,69E+00
1,17E+00
2,48E-01
4,30E-02
1,19E-02
1,90E-03
4,18E-04
Copyright Vincotech
11
09 Dec. 2019 / Revision 1
70-W424NIA800M7-M800F70
datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
2400
2400
VGE
:
7
V
V
V
I
I
8
9
2000
2000
10
11
12
13
14
15
16
17
V
V
V
V
V
V
V
V
1600
1200
800
400
0
1600
1200
800
400
0
0
0
1
2
3
4
5
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
V
Tj:
Tj =
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
10-1
800
I
Z
600
10-2
400
200
0,5
10-3
0,2
0,1
0,05
0,02
0,01
0,005
0
10-4
10-5
0
0
10-4
10-3
10-2
10-1
100
101
tp(s)
102
2
4
6
8
10
12
VG E (V)
tp
=
250
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
0,06
K/W
IGBT thermal model values
R (K/W)
τ (s)
7,38E-03
1,16E-02
1,14E-02
2,25E-02
5,89E-03
1,30E-03
1,87E-03
5,64E+00
1,21E+00
2,33E-01
4,98E-02
1,55E-02
2,19E-03
5,19E-04
Copyright Vincotech
12
09 Dec. 2019 / Revision 1
70-W424NIA800M7-M800F70
datasheet
Boost Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
10000
I
1ms
10µs
100ms
10ms
100µs
DC
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
VC E (V)
D =
single pulse
80
Ts
=
ºC
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
13
09 Dec. 2019 / Revision 1
70-W424NIA800M7-M800F70
datasheet
Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
2400
2000
1600
1200
800
400
0
Z
10-1
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
5
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
0,11
Tj:
R th(j-s)
=
K/W
FWD thermal model values
R (K/W)
τ (s)
7,54E-03
1,57E-02
2,42E-02
3,71E-02
1,34E-02
3,30E-03
6,17E-03
5,69E+00
1,17E+00
2,48E-01
4,30E-02
1,19E-02
1,90E-03
4,18E-04
Copyright Vincotech
14
09 Dec. 2019 / Revision 1
70-W424NIA800M7-M800F70
datasheet
Boost Sw.Inv.Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
2400
2000
1600
1200
800
400
0
Z
10-1
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
5
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
0,11
Tj:
R th(j-s)
=
K/W
FWD thermal model values
R (K/W)
τ (s)
7,54E-03
1,57E-02
2,42E-02
3,71E-02
1,34E-02
3,30E-03
6,17E-03
5,69E+00
1,17E+00
2,48E-01
4,30E-02
1,19E-02
1,90E-03
4,18E-04
Copyright Vincotech
15
09 Dec. 2019 / Revision 1
70-W424NIA800M7-M800F70
datasheet
Boost Sw. Protection Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
180
150
120
90
60
30
0
Z
10-1
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
5
VF (V)
tp
=
250
μs
25 °C
D =
tp / T
0,53
Tj:
125 °C
R th(j-s)
=
K/W
FWD thermal model values
R (K/W)
τ (s)
4,78E-02
9,08E-02
1,17E-01
1,51E-01
7,91E-02
1,69E-02
2,28E-02
7,53E+00
1,57E+00
3,99E-01
8,31E-02
2,68E-02
3,51E-03
6,58E-04
Copyright Vincotech
16
09 Dec. 2019 / Revision 1
70-W424NIA800M7-M800F70
datasheet
Snubber Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
600
500
400
300
200
100
0
Z
10-1
0,5
10-2
0,2
0,1
0,05
0,02
0,01
0,005
0
10-3
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
5
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
0,13
Tj:
R th(j-s)
=
K/W
FWD thermal model values
R (K/W)
τ (s)
2,85E-02
2,95E-02
1,94E-02
3,88E-02
5,18E-03
5,50E-03
4,51E+00
9,09E-01
1,46E-01
3,45E-02
4,36E-03
3,37E-04
Thermistor Characteristics
figure 1.
Thermistor
Typical Thermistor resistance values
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
NTC-typical temperature characteristic
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
17
09 Dec. 2019 / Revision 1
70-W424NIA800M7-M800F70
datasheet
Buck Switching Characteristics
figure 1.
IGBT
figure 2.
FWD
Typical switching energy losses as a function of collector current
Typical reverse recovered energy loss as a function of collector current
Erec = f(I c)
E = f(I C
)
160
80
Eon
Eon
E
E
Erec
Erec
Eon
120
60
Eoff
Eoff
80
40
0
40
20
0
Eoff
Erec
0
400
800
1200
25 °C
1600
0
400
800
1200
25 °C
1600
IC (A)
IC (A)
Tj:
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
=
600
V
V
Ω
Ω
VCE
VGE
=
=
=
600
-8 / 16
1
V
V
Ω
Tj:
125 °C
150 °C
125 °C
150 °C
-8 / 16
R gon
R goff
1
1
R gon
figure 3.
IGBT
figure 4.
FWD
Typical reverse recovery time as a function of collector current
Typical switching times as a function of collector current
trr = f(I C
)
t = f(I C
)
0,6
1
trr
trr
t
t
0,5
td(off)
0,4
0,3
0,2
0,1
0
td(on)
trr
0,1
tf
tr
0,01
0
400
800
1200
1600
0
400
800
1200
1600
IC (A)
IC (A)
With an inductive load at
25 °C
With an inductive load at
VCE
=
=
=
600
-8 / 16
1
V
V
Ω
Tj:
Tj
VCE
=
=
=
=
=
150
600
-8 / 16
1
°C
V
125 °C
150 °C
VGE
R gon
VGE
V
R gon
R goff
Ω
Ω
1
Copyright Vincotech
18
09 Dec. 2019 / Revision 1
70-W424NIA800M7-M800F70
datasheet
Buck Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical recovered charge as a function of collector current
I RM = f(I C
)
Q r = f(I C
)
200
1200
Q
Qr
Qr
I
IRM
IRM
IRM
150
900
Qr
100
50
0
600
300
0
0
400
800
1200
25 °C
1600
0
400
800
1200
25 °C
1600
IC (A)
IC (A)
With an inductive load at
With an inductive load at
VCE
=
=
=
600
-8 / 16
1
V
V
Ω
Tj:
125 °C
150 °C
VCE
=
=
=
600
-8 / 16
1
V
V
Ω
Tj:
125 °C
150 °C
VGE
VGE
R gon
R gon
figure 7.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
di F/dt, di rr/dt = f(I C
)
25000
diF/dt
dirr/dt
t
i
20000
15000
10000
5000
0
0
400
800
1200
25 °C
1600
IC (A)
With an inductive load at
VCE
=
=
=
600
-8 / 16
1
V
V
Ω
Tj:
125 °C
150 °C
VGE
R gon
Copyright Vincotech
19
09 Dec. 2019 / Revision 1
70-W424NIA800M7-M800F70
datasheet
Buck Switching Characteristics
figure 8.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
1800
IC MAX
I
1600
I
1400
1200
1000
800
600
400
200
0
I
V
0
200
400
600
800
1000
1200
1400
VC E (V)
At
Tj =
150
°C
Ω
R gon
R goff
=
=
1
1
Ω
Copyright Vincotech
20
09 Dec. 2019 / Revision 1
70-W424NIA800M7-M800F70
datasheet
Buck Switching Definitions
General conditions
T j
=
=
=
150 °C
Rgon
Rgoff
1 Ω
1 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t ( s)
t ( s)
VGE (0%) =
-8
V
VGE (0%) =
-8
16
V
VGE (100%) =
VC (100%) =
I C (100%) =
16
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
600
800
390
V
600
800
165
V
A
A
tdoff
=
ns
tdon
=
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t ( s)
t ( s)
VC (100%) =
I C (100%) =
600
800
74
V
VC (100%) =
I C (100%) =
600
800
70
V
A
A
tf
=
ns
tr
=
ns
Copyright Vincotech
21
09 Dec. 2019 / Revision 1
70-W424NIA800M7-M800F70
datasheet
Buck Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t ( s)
t ( s)
VF (100%) =
I F (100%) =
I RRM (100%) =
600
800
899
528
V
I F (100%) =
Q r (100%) =
800
173
A
A
μC
A
trr
=
ns
Copyright Vincotech
22
09 Dec. 2019 / Revision 1
70-W424NIA800M7-M800F70
datasheet
Boost Switching Characteristics
figure 1.
IGBT
figure 2.
FWD
Typical switching energy losses as a function of collector current
Typical reverse recovered energy loss as a function of collector current
Erec = f(I c)
E = f(I C
)
160
80
Erec
Erec
E
E
Eon
Eoff
Eon
Eoff
Eon
120
60
Erec
Eoff
80
40
0
40
20
0
0
400
800
1200
25 °C
1600
0
400
800
1200
25 °C
1600
IC (A)
IC (A)
Tj:
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
=
600
V
V
Ω
Ω
VCE
VGE
=
=
=
600
-8 / 16
1
V
V
Ω
Tj:
125 °C
150 °C
125 °C
150 °C
-8 / 16
R gon
R goff
1
1
R gon
figure 3.
IGBT
figure 4.
FWD
Typical switching times as a function of collector current
Typical reverse recovery time as a function of collector current
t = f(I C
)
trr = f(I C)
0,6
1
trr
trr
t
t
0,5
td(off)
td(on)
0,4
0,3
0,2
0,1
0
trr
0,1
tf
tr
0,01
0
400
800
1200
1600
0
400
800
1200
1600
IC (A)
IC (A)
With an inductive load at
With an inductive load at
25 °C
VCE
=
=
=
600
-8 / 16
1
V
V
Ω
Tj:
Tj =
150
600
-8 / 16
1
°C
V
125 °C
150 °C
VGE
VCE
=
=
=
=
R gon
VGE
R gon
R goff
V
Ω
Ω
1
Copyright Vincotech
23
09 Dec. 2019 / Revision 1
70-W424NIA800M7-M800F70
datasheet
Boost Switching Characteristics
figure 6.
FWD
figure 5.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical recovered charge as a function of collector current
I RM = f(I C
)
Q r = f(I C
)
200
1200
Qr
Qr
Q
I
IRM
IRM
150
900
IRM
Qr
100
50
0
600
300
0
0
400
800
1200
25 °C
1600
0
400
800
1200
25 °C
1600
IC (A)
IC (A)
With an inductive load at
With an inductive load at
VCE
=
=
=
600
-8 / 16
1
V
V
Ω
Tj:
125 °C
150 °C
VCE
=
=
=
600
-8 / 16
1
V
V
Ω
Tj:
125 °C
150 °C
VGE
VGE
R gon
R gon
figure 7.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
di F/dt, di rr/dt = f(I C
)
30000
diF/dt
dirr/dt
t
i
25000
20000
15000
10000
5000
0
0
400
800
1200
25 °C
1600
IC (A)
With an inductive load at
VCE
=
=
=
600
-8 / 16
1
V
V
Ω
Tj:
125 °C
150 °C
VGE
R gon
Copyright Vincotech
24
09 Dec. 2019 / Revision 1
70-W424NIA800M7-M800F70
datasheet
Boost Switching Characteristics
figure 8.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
1800
IC MAX
I
1600
I
1400
1200
1000
800
600
400
200
0
I
V
0
200
400
600
800
1000
1200
1400
VC E (V)
At
Tj =
150
°C
Ω
R gon
R goff
=
=
1
1
Ω
Copyright Vincotech
25
09 Dec. 2019 / Revision 1
70-W424NIA800M7-M800F70
datasheet
Boost Switching Definitions
General conditions
T j
=
=
=
150 °C
Rgon
Rgoff
1 Ω
1 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t ( s)
t ( s)
VGE (0%) =
-8
V
VGE (0%) =
-8
16
V
VGE (100%) =
VC (100%) =
I C (100%) =
16
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
600
800
485
V
600
800
153
V
A
A
tdoff
=
ns
tdon
=
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t ( s)
t ( s)
VC (100%) =
I C (100%) =
600
800
101
V
VC (100%) =
I C (100%) =
600
800
41
V
A
A
tf
=
ns
tr
=
ns
Copyright Vincotech
26
09 Dec. 2019 / Revision 1
70-W424NIA800M7-M800F70
datasheet
Boost Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t ( s)
t ( s)
VF (100%) =
I F (100%) =
I RRM (100%) =
600
800
879
402
V
I F (100%) =
Q r (100%) =
800
135
A
A
μC
A
trr
=
ns
Copyright Vincotech
27
09 Dec. 2019 / Revision 1
70-W424NIA800M7-M800F70
datasheet
Ordering Code & Marking
Version
Ordering Code
without thermal paste
with thermal paste
70-W424NIA800M7-M800F70
70-W424NIA800M7-M800F70-/3/
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Driver pins
Power connections
Pin
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
1.10
X1
Y1
Function
S11-a-1
M6 screw
2.1
X2
0
Y2
0
Function
Phase
Phase
Phase
DC+
-2,15
-2,15
46,15
46,15
19,45
24,55
-7,65
-7,65
51,65
51,65
81,95
84,85
81,95
84,85
93,05
93,05
67,15
70,05
67,15
70,05
G11-a-1
2.2
22
0
S11-a-2
2.3
44
0
G11-a-2
2.4
0
110,4
110,4
110,4
0
DC+ (desat)
DC+ (desat)
S13-a-1
2.5
22
GND
2.6
44
DC-
2.7
101
123
145
101
Phase
Phase
Phase
DC+
G13-a-1
2.8
0
S13-a-2
2.9
0
G13-a-2
2.10
110,4
1.11
1.12
-5,45
-2,55
28
28
S14-a-1
G14-a-1
2.11
2.12
123
145
110,4
110,4
GND
DC-
1.13
1.14
1.15
1.16
1.17
1.18
1.19
1.20
1.21
1.22
1.23
1.24
1.25
1.26
46,55
49,45
-4,8
28
G14-a-2
S14-a-2
Low current connections
28
M4 screw
3.1
X3
Y3
Function
TR+
TR+
DC+
DC+
DC-
50,85
49,05
49,05
50,85
75,35
75,35
86,7
G12-a-1
-39,1
184,1
-39,1
184,1
-39,1
184,1
-39,1
184,1
-39,1
184,1
-39,1
184,1
89,8
89,8
65,2
65,2
45,2
45,2
20,6
20,6
89,8
89,8
45,2
45,2
-1,6
S12-a-1
3.2
45,6
S12-a-2
3.3
48,8
G12-a-2
3.4
16,75
27,25
67,65
67,65
98,85
98,85
147,15
147,15
GND (desat)
GND (desat)
Therm12
Therm11
S11-b-1
3.5
3.6
DC-
3.7
TR-
89,8
3.8
TR-
81,95
84,85
81,95
84,85
3.9
GND
GND
GND
GND
G11-b-1
3.10
3.11
3.12
S11-b-2
G11-b-2
1.27
1.28
1.29
1.30
1.31
1.32
1.33
1.34
1.35
1.36
1.37
1.38
1.39
1.40
1.41
1.42
1.43
1.44
120,45
125,55
93,35
93,35
152,65
152,65
95,55
98,45
147,55
150,45
96,2
93,05
93,05
67,15
70,05
67,15
70,05
28
DC+ (desat)
DC+ (desat)
S13-b-1
G13-b-1
S13-b-2
G13-b-2
S14-b-1
28
G14-b-1
28
G14-b-2
28
S14-b-2
50,85
49,05
49,05
50,85
75,35
75,35
86,7
89,8
G12-b-1
99,4
S12-b-1
146,6
149,8
117,75
128,25
168,65
168,65
S12-b-2
G12-b-2
GND (desat)
GND (desat)
Therm22
Therm21
Copyright Vincotech
28
09 Dec. 2019 / Revision 1
70-W424NIA800M7-M800F70
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11, T12
MOSFET
1200 V
800 A
800 A
800 A
800 A
800 A
60 A
Buck Switch
Buck Diode
D11, D12
T13, T14
FWD
IGBT
1200 V
1200 V
1200 V
1200 V
1200 V
1200 V
Boost Switch
D13, D14
FWD
Boost Diode
D15, D16
FWD
Boost Sw.Inv.Diode
Boost Sw. Protection Diode
Snubber Diode
D41, D42, D43, D44
D61, D62
FWD
FWD
200 A
Rt
Thermistor
Thermistor
Copyright Vincotech
29
09 Dec. 2019 / Revision 1
70-W424NIA800M7-M800F70
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 4
>SPQ
Standard
<SPQ
Sample
Handling instructions for Widebody 2phase packages see vincotech.com website.
Package data
Package data for Widebody 2phase packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
70-W424NIA800M7-M800F70-D1-14
09 Dec. 2019
AC test voltage and maximum PCB temperature added
3
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
30
09 Dec. 2019 / Revision 1
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70.0000MHZMP2410/50/-10+60/8PF
Parallel - 3Rd Overtone Quartz Crystal, 70MHz Nom, ROHS COMPLIANT, SMD, 4 PIN
EUROQUARTZ
70.0000MHZMP430/10/-10+60/SR
Series - 3Rd Overtone Quartz Crystal, 70MHz Nom, ROHS COMPLIANT, SMD, 4 PIN
EUROQUARTZ
70.000MHZ49USMX/30/30/-10+60/18PF/AT3
Parallel - 3Rd Overtone Quartz Crystal, 70MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, RESISTANCE WELDED, SMD, 2 PIN
EUROQUARTZ
70.000MHZ49USMXL25/10/10/-10+60/8PF/AT3
Parallel - 3Rd Overtone Quartz Crystal, 70MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, RESISTANCE WELD, SMD, 2 PIN
EUROQUARTZ
70.000MHZ49USMXL25/10/10/-10+60/SR/AT3
Series - 3Rd Overtone Quartz Crystal, 70MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, RESISTANCE WELD, SMD, 2 PIN
EUROQUARTZ
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