80-M2122PA200SC02-K709F45 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | 80-M2122PA200SC02-K709F45 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总18页 (文件大小：6529K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
80-M2122PA200SC02-K709F45
datasheet
MiniSKiiP® DUAL 2
1200 V / 200 A
Topology features
MiniSKiiP® 2 16 mm housing
● Half Bridge
● Temperature sensor
Component features
● Easy paralleling
● Low turn-off losses
● Low collector emitter saturation voltage
● Positive temperature coefficient
● Short tail current
Housing features
● Base isolation: Al2O3
● Easy assembly in one mounting step
● Flexible PCB design w/o pin holes
● Half-Bridge configuration
Schematic
● Rugged solderless spring contacts
Target applications
● Elevator Drives
Types
● 80-M2122PA200SC02-K709F45
Copyright Vincotech
1
10 Feb. 2023 / Revision 1
80-M2122PA200SC02-K709F45
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Half-Bridge Switch
VCES
Collector-emitter voltage
1200
227
600
577
±20
10
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Half-Bridge Diode
VRRM
Peak repetitive reverse voltage
1200
105
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
715
A
Single Half Sine Wave,
tp = 10 ms
2550
200
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Visol
Visol
DC Test Voltage*
tp = 2 s
5500
2500
V
V
Isolation voltage
AC Voltage
With std lid
tp = 1 min
Creepage distance
Clearance
For more informations see handling
instructions
6,3
mm
mm
With std lid
For more informations see handling
instructions
6,3
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
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10 Feb. 2023 / Revision 1
80-M2122PA200SC02-K709F45
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Half-Bridge Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0076
200
25
5,1
5,8
6,4
V
V
25
1,53
1,94
2,23
2,31
1,97(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
2,6
µA
nA
Ω
20
240
3,75
12600
540
Cies
Cres
Qg
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
±15
0
1600
Thermal
λpaste = 2,5 W/mK
(HPTP)
Thermal resistance junction to sink(2)
Dynamic
0,16
K/W
Rth(j-s)
25
182,24
195,33
198,94
41,83
46,12
47,52
290,88
373,7
396,96
76,37
153,96
182,41
7,24
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 2 Ω
Rgoff = 2 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
200
tf
125
150
25
ns
QrFWD=0,476 µC
QrFWD=0,465 µC
QrFWD=0,472 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
8,63
mWs
mWs
9,03
13,67
21,62
24,32
Eoff
125
150
Copyright Vincotech
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10 Feb. 2023 / Revision 1
80-M2122PA200SC02-K709F45
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Half-Bridge Diode
Static
25
1,44
1,71
1,81
1
1,6(1)
400
VF
IR
Forward voltage
100
125
150
25
V
Reverse leakage current
Thermal
Vr = 1200 V
µA
150
70
λpaste = 2,5 W/mK
(HPTP)
Thermal resistance junction to sink(2)
Dynamic
0,47
K/W
Rth(j-s)
25
38,35
36,61
36,5
IRM
Peak recovery current
125
150
25
A
20,27
20,86
21,15
0,476
0,465
0,472
0,1
trr
Reverse recovery time
125
150
25
ns
di/dt=5519 A/µs
di/dt=4604 A/µs
di/dt=5077 A/µs
Qr
Recovered charge
±15
600
200
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
0,09
mWs
A/µs
0,091
5412,74
4396,46
4846,03
(dirf/dt)max
125
150
Copyright Vincotech
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10 Feb. 2023 / Revision 1
80-M2122PA200SC02-K709F45
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
5
kΩ
%
R100 = 493 Ω
100
-5
5
245
1,4
mW
mW/K
K
d
25
B(25/50)
Tol. ±2 %
Tol. ±2 %
3375
3437
B(25/100)
B-value
K
Vincotech Thermistor Reference
K
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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10 Feb. 2023 / Revision 1
80-M2122PA200SC02-K709F45
datasheet
Half-Bridge Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
600
500
VGE
:
7 V
8 V
500
400
300
200
100
0
9 V
400
300
200
100
0
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
200
10
-1
10
150
100
50
-2
10
-3
10
0,5
0,2
0,1
-4
0,05
0,02
0,01
0,005
0
10
-5
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
0,165
25 °C
VCE
=
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
6,52E-03
4,19E-02
6,98E-02
3,95E-02
7,01E-03
1,00E+01
1,42E+00
1,78E-01
3,90E-02
2,49E-03
Copyright Vincotech
6
10 Feb. 2023 / Revision 1
80-M2122PA200SC02-K709F45
datasheet
Half-Bridge Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100µs
100
10
1ms
10ms
100ms
DC
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
7
10 Feb. 2023 / Revision 1
80-M2122PA200SC02-K709F45
datasheet
Half-Bridge Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,474
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
4,90E-02
7,69E-02
2,53E-01
6,50E-02
3,05E-02
2,93E+00
4,35E-01
7,34E-02
1,04E-02
1,20E-03
Copyright Vincotech
8
10 Feb. 2023 / Revision 1
80-M2122PA200SC02-K709F45
datasheet
Thermistor Characteristics
figure 8.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
6000
5000
4000
3000
2000
1000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
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10 Feb. 2023 / Revision 1
80-M2122PA200SC02-K709F45
datasheet
Half-Bridge Switching Characteristics
figure 9.
IGBT
figure 10.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
45
40
35
30
25
20
15
10
5
30
25
20
15
10
5
Eoff
Eoff
Eoff
Eoff
Eon
Eon
Eon
Eon
Eoff
Eon
Eoff
Eon
0
0
0
50
100
150
200
250
300
350
400
IC(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
Ω
125 °C
150 °C
600
±15
200
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
2
figure 11.
FWD
figure 12.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
0,125
0,100
0,075
0,050
0,025
0,000
0,150
0,125
0,100
0,075
0,050
0,025
0,000
Erec
Erec
Erec
Erec
Erec
Erec
0
50
100
150
200
250
300
350
400
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
200
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
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10 Feb. 2023 / Revision 1
80-M2122PA200SC02-K709F45
datasheet
Half-Bridge Switching Characteristics
figure 13.
IGBT
figure 14.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
td(off)
td(on)
tf
tf
-1
10
-1
10
tr
tr
-2
10
-2
10
0
50
100
150
200
250
300
350
400
IC(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
2
°C
V
150
600
±15
200
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
2
figure 15.
FWD
figure 16.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,030
0,025
0,020
0,015
0,010
0,005
0,000
trr
trr
trr
trr
trr
trr
0
50
100
150
200
250
300
350
400
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
200
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
11
10 Feb. 2023 / Revision 1
80-M2122PA200SC02-K709F45
datasheet
Half-Bridge Switching Characteristics
figure 17.
FWD
figure 18.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
50
100
150
200
250
300
350
400
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
200
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 19.
FWD
figure 20.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
40
35
30
25
20
15
10
5
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
0
50
100
150
200
250
300
350
400
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
200
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
12
10 Feb. 2023 / Revision 1
80-M2122PA200SC02-K709F45
datasheet
Half-Bridge Switching Characteristics
figure 21.
FWD
figure 22.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
7000
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
6000
5000
4000
3000
2000
1000
0
0
50
100
150
200
250
300
350
400
IC(A)
0
1
2
3
4
5
6
7
8
9
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
200
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 23.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
450
IC MAX
400
350
300
250
200
150
100
50
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
2
2
Ω
Copyright Vincotech
13
10 Feb. 2023 / Revision 1
80-M2122PA200SC02-K709F45
datasheet
Half-Bridge Switching Definitions
figure 24.
IGBT
figure 25.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 26.
IGBT
figure 27.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
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10 Feb. 2023 / Revision 1
80-M2122PA200SC02-K709F45
datasheet
Half-Bridge Switching Definitions
figure 28.
FWD
figure 29.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
15
10 Feb. 2023 / Revision 1
80-M2122PA200SC02-K709F45
datasheet
Ordering Code
Version
Ordering Code
With std lid (6.5mm height) + no thermal grease
With thin lid (2.8mm height) + no thermal grease
80-M2122PA200SC02-K709F45-/0A/
80-M2122PA200SC02-K709F45-/0B/
80-M2122PA200SC02-K709F45-/1A/
80-M2122PA200SC02-K709F45-/1B/
80-M2122PA200SC02-K709F45-/4A/
80-M2122PA200SC02-K709F45-/4B/
80-M2122PA200SC02-K709F45-/5A/
80-M2122PA200SC02-K709F45-/5B/
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
Marking
Name
NN-NNNNNNNNNNNNNN-
TTTTTTVV
Date code
UL & VIN
Lot
Serial
Text
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
S12
G12
DC+
DC+
DC+
DC+
DC+
DC+
DC+
DC+
DC+
DC+
Ph
-7,6
4,7
21,9
21,9
21,8
18,6
15,4
12,2
9
2
3
18,6
18,6
18,6
18,6
18,6
22,5
22,5
22,5
22,5
22,5
-22,5
-22,5
-22,5
-22,5
-22,5
-18,6
-18,6
-18,6
-18,6
-18,6
-6,8
4
5
6
7
8
21,8
18,6
15,4
12,2
9
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
7,8
4,6
Ph
1,4
Ph
-1,8
-5
Ph
Ph
7,8
Ph
4,6
Ph
1,4
Ph
-1,8
-5
Ph
Ph
1,6
Therm1
Therm2
DC-
DC-
DC-
DC-
DC-
DC-
DC-
DC-
DC-
DC-
-6,8
-1,6
-9
18,6
18,6
18,6
18,6
18,6
22,5
22,5
22,5
22,5
22,5
4,6
-12,2
-15,4
-18,6
-21,8
-9
-12,2
-15,4
-18,6
-21,8
-18,7
-21,9
S11
G11
1,7
Pad positions refers to center point. For more informations on pad design please see package data
Copyright Vincotech
16
10 Feb. 2023 / Revision 1
80-M2122PA200SC02-K709F45
datasheet
Pinout
DC+
3-12
T12
D11
D12
G12
2
S12
1
Ph
13-22
T11
G11
36
S11
35
Rt
DC-
25-34
Therm1
23
Therm2
24
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12
D11, D12
Rt
IGBT
FWD
1200 V
1200 V
200 A
100 A
Half-Bridge Switch
Half-Bridge Diode
Thermistor
Thermistor
Copyright Vincotech
17
10 Feb. 2023 / Revision 1
80-M2122PA200SC02-K709F45
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 72
>SPQ
Standard
<SPQ
Sample
Handling instructions for MiniSKiiP® 2 packages see vincotech.com website.
Package data
Package data for MiniSKiiP® 2 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
80-M2122PA200SC02-K709F45-D1-14
10 Feb. 2023
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
18
10 Feb. 2023 / Revision 1
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