80-M212PNB015M7-K778C7

80-M212PNB015M7-K778C70

datasheet

MiniSKiiP^®PIM 2

1200 V / 15 A

Features

MiniSKiiP^®2 16 mm housing

● CI topology with splitted phase for switched reluctance

motor applications

● IGBT M7 with low VCEsat and improved EMC behavior

● Solder-free spring contact technology

● Built-in NTC

Schematic

Target applications

● Industrial Drives

Types

● 80-M212PNB015M7-K778C70

Copyright Vincotech

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06 Apr. 2021 / Revision 2

80-M212PNB015M7-K778C70

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Inverter Switch

V_CES

Collector-emitter voltage

1200

26

V

A

I_C

Collector current (DC current)

Repetitive peak collector current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

I_CRM

t_plimited by T_jmax

T_j= T_jmax

30

A

P_tot

79

W

V

V_GES

Gate-emitter voltage

±20

9,5

175

t_SC

Short circuit ratings

V_GE= 0 V, V_CC= 800 V

µs

°C

T_jmax

Maximum junction temperature

Inverter Diode

V_RRM

Peak repetitive reverse voltage

1200

27

V

A

I_F

Forward current (DC current)

Repetitive peak forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_FRM

t_plimited by T_jmax

T_j= T_jmax

30

A

P_tot

61

W

°C

T_jmax

Maximum junction temperature

175

Inverter Sw. Prot. Diode

V_RRM

Peak repetitive reverse voltage

1200

15

V

A

I_F

Forward current (DC current)

Repetitive peak forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_FRM

t_plimited by T_jmax

T_j= T_jmax

10

A

P_tot

41

W

°C

T_jmax

Maximum junction temperature

175

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06 Apr. 2021 / Revision 2

80-M212PNB015M7-K778C70

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Rectifier Diode

V_RRM

Peak repetitive reverse voltage

1600

43

V

A

I_F

Forward current (DC current)

Surge (non-repetitive) forward current

Surge current capability

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

T_s= 80 °C

I_FSM

I²t

200

58

A

Single Half Sine Wave,

t_p= 10 ms

A²s

W

°C

P_tot

Total power dissipation

T_j= T_jmax

T_jmax

Maximum junction temperature

150

Module Properties

Thermal Properties

T_stg

T_jop

Storage temperature

-40…+125

°C

Operation temperature under switching

condition

-40…+(T_jmax- 25)

Isolation Properties

Isolation voltage

V_isol

DC Test Voltage*

t_p= 2 s

5500

2500

V

Isolation voltage

AC Voltage

With std lid

t_p= 1 min

Creepage distance

Clearance

For more informations see handling

instructions

6,3

mm

With std lid

For more informations see handling

instructions

6,3

Comparative Tracking Index

*100 % tested in production

CTI

≥ 200

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06 Apr. 2021 / Revision 2

80-M212PNB015M7-K778C70

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Inverter Switch

Static

V_GE(th)

Gate-emitter threshold voltage

10

0,0015

15

25

5,4

6

6,6

V

25

1,7

2,15⁽¹⁾

V_CEsat

Collector-emitter saturation voltage

15

125

150

1,95

2,01

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

0

1200

0

25

60

µA

nA

Ω

500

None

2900

120

34

C_ies

C_oes

C_res

Q_g

pF

nC

Output capacitance

0

10

25

Reverse transfer capacitance

Gate charge

V_CC= 600 V

15

110

Thermal

λ_paste= 2,5 W/mK

(HPTP)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

1,2

K/W

25

104,96

102,72

103,36

27,2

t_d(on)

Turn-on delay time

Rise time

125

150

25

ns

t_r

125

150

25

29,44

29,76

156,8

182,08

187,84

109,01

132,9

138,82

1,23

R_gon= 16 Ω

R_goff= 16 Ω

t_d(off)

Turn-off delay time

Fall time

125

150

25

ns

±15

600

15

t_f

125

150

25

ns

Q_rFWD=1,63 µC

Q_rFWD=2,64 µC

Q_rFWD=2,98 µC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

25

1,59

mWs

1,7

1,08

E_off

125

150

1,47

1,57

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80-M212PNB015M7-K778C70

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Inverter Diode

Static

25

1,62

1,74

1,73

2,1⁽¹⁾

V_F

I_R

Forward voltage

15

125

150

V

Reverse leakage current

Thermal

V_r= 1200 V

25

30

µA

λ_paste= 2,5 W/mK

(HPTP)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

1,55

K/W

25

16,06

17,38

17,69

215,69

335,87

378,96

1,63

I_RRM

Peak recovery current

125

150

25

A

t_rr

Reverse recovery time

125

150

25

ns

di/dt=472 A/µs

di/dt=427 A/µs

di/dt=418 A/µs

Q_r

Recovered charge

±15

600

15

125

150

25

2,64

μC

2,98

0,557

0,986

1,14

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

25

mWs

A/µs

242,84

134,86

125,11

(di_rf/dt)_max

125

150

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06 Apr. 2021 / Revision 2

80-M212PNB015M7-K778C70

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

V_GE[V]

V_GS[V]

Min

Max

Inverter Sw. Prot. Diode

Static

25

1,57

1,65

2,1⁽¹⁾

V_F

Forward voltage

5

125

150

V

I_R

Reverse leakage current

Thermal

V_r= 1200 V

25

20

µA

λ_paste= 2,5 W/mK

(HPTP)

(2)

R_th(j-s)

Thermal resistance junction to sink

2,31

K/W

Rectifier Diode

Static

25

1,12

1,03

1,02

1,5⁽¹⁾

V_F

I_R

Forward voltage

18

125

150

25

V

100

Reverse leakage current

Thermal

V_r= 1600 V

µA

150

1000

λ_paste= 2,5 W/mK

(HPTP)

(2)

R_th(j-s)

Thermal resistance junction to sink

1,2

K/W

Copyright Vincotech

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06 Apr. 2021 / Revision 2

80-M212PNB015M7-K778C70

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

V_GE[V]

V_GS[V]

Min

Max

Thermistor

Static

R

Δ_R/R

P

Rated resistance

Deviation of R₁₀₀

Power dissipation

Power dissipation constant

B-value

25

5

kΩ

%

R₁₀₀= 493 Ω

100

-5

5

245

1,4

mW

mW/K

K

d

25

B_(25/50)

Tol. ±2 %

3375

3437

B_(25/100)

B-value

K

Vincotech Thermistor Reference

K

(1)

Value at chip level

(2)

Only valid with pre-applied Vincotech thermal interface material.

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06 Apr. 2021 / Revision 2

80-M212PNB015M7-K778C70

datasheet

Inverter Switch Characteristics

figure 1.

IGBT

figure 2.

IGBT

Typical output characteristics

I_C= f(V_CE

)

I_C= f(V_CE)

40

V_GE

:

7 V

8 V

9 V

10 V

11 V

12 V

13 V

14 V

15 V

16 V

17 V

30

20

10

30

20

10

0

1

2

3

4

5

6

7

8

1

2

3

4

5

6

7

8

V

_CE(V)

V_CE(V)

t_p

=

t_p

=

250

15

μs

250

150

μs

°C

25 °C

V_GE

T_j=

V

125 °C

150 °C

T_j:

V_GEfrom 7 V to 17 V in steps of 1 V

figure 3.

IGBT

figure 4.

IGBT

Typical transfer characteristics

Transient thermal impedance as a function of pulse width

I_C= f(V_GE

)

Z_th(j-s)= f(t_p)

1

15,0

10

12,5

10,0

7,5

0

10

-1

10

5,0

0,5

0,2

0,1

-2

10

0,05

0,02

0,01

0,005

0

2,5

-3

0,0

10

-5

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

2,5

5,0

7,5

10,0

12,5

10

t_p(s)

V

_GE(V)

t_p

=

250

10

μs

V

D =

t_p/ T

1,203

25 °C

V_CE

=

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

IGBT thermal model values

R (K/W)

τ (s)

8,45E-02

4,66E-01

3,90E-01

1,45E-01

1,16E-01

1,63E+00

9,37E-02

2,02E-02

3,96E-03

5,44E-04

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06 Apr. 2021 / Revision 2

80-M212PNB015M7-K778C70

datasheet

Inverter Switch Characteristics

figure 5.

IGBT

Safe operating area

I_C= f(V_CE

)

100

10µs

10

1

100µs

1ms

10ms

0,1

0,01

100ms

DC

1

10

100

1000

10000

V

_CE(V)

D =

single pulse

T_s=

80

15

°C

V

V_GE

=

T_j=

T_jmax

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06 Apr. 2021 / Revision 2

80-M212PNB015M7-K778C70

datasheet

Inverter Diode Characteristics

figure 6.

FWD

figure 7.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

1

40

30

20

10

0

10

0

10

-1

10

0,5

0,2

0,1

-2

10

0,05

0,02

0,01

0,005

0

-3

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,0

0,5

1,0

1,5

2,0

2,5

3,0

10

t_p(s)

V_F(V)

t_p

=

250

μs

D =

t_p/ T

1,553

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

FWD thermal model values

R (K/W)

τ (s)

8,50E-02

5,68E-01

4,67E-01

2,46E-01

1,87E-01

1,79E+00

6,89E-02

1,30E-02

2,26E-03

3,04E-04

Copyright Vincotech

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06 Apr. 2021 / Revision 2

80-M212PNB015M7-K778C70

datasheet

Inverter Sw. Prot. Diode Characteristics

figure 8.

FWD

figure 9.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

1

15,0

12,5

10,0

7,5

10

0

10

-1

5,0

10

0,5

0,2

0,1

0,05

0,02

0,01

0,005

0

2,5

-2

0,0

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,5

1,0

1,5

2,0

2,5

3,0

10

t_p(s)

V_F(V)

t_p

=

250

μs

D =

t_p/ T

2,313

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

FWD thermal model values

R (K/W)

τ (s)

1,03E-01

4,16E-01

7,17E-01

6,03E-01

4,75E-01

1,46E+00

7,07E-02

9,80E-03

1,47E-03

2,69E-04

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06 Apr. 2021 / Revision 2

80-M212PNB015M7-K778C70

datasheet

Rectifier Diode Characteristics

figure 10.

Rectifier

figure 11.

Rectifier

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

1

50

40

30

20

10

0

10

0

10

-1

10

0,5

0,2

-2

10

0,1

0,05

0,02

0,01

0,005

0

-3

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,00

0,25

0,50

μs

0,75

1,00

1,25

1,50

1,75

10

V_F(V)

t_p(s)

t_p

=

250

D =

t_p/ T

1,199

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

Rectifier thermal model values

R (K/W)

τ (s)

4,23E-02

1,04E-01

5,86E-01

2,59E-01

1,36E-01

7,19E-02

2,73E+00

3,60E-01

4,98E-02

1,70E-02

3,63E-03

5,18E-04

Copyright Vincotech

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06 Apr. 2021 / Revision 2

80-M212PNB015M7-K778C70

datasheet

Thermistor Characteristics

figure 12.

Thermistor

Typical NTC characteristic as function of temperature

R_T= f(T)

6000

5000

4000

3000

2000

1000

0

20

40

60

80

100

120

140

T(°C)

Copyright Vincotech

13

06 Apr. 2021 / Revision 2

80-M212PNB015M7-K778C70

datasheet

Inverter Switching Characteristics

figure 13.

IGBT

figure 14.

IGBT

Typical switching energy losses as a function of collector current

Typical switching energy losses as a function of gate resistor

E = f(I_C)

E = f(R_g)

6

5

4

3

2

1

0

3,5

3,0

2,5

2,0

1,5

1,0

0,5

0,0

E_on

E_off

0

5

10

15

20

25

30

0

10

20

30

40

50

60

70

I_C(A)

R_g(Ω)

With an inductive load at

25 °C

V_CE

V_GE

=

V_CE

V_GE

I_C

=

600

±15

16

V

Ω

125 °C

150 °C

600

±15

15

V

125 °C

150 °C

T_j:

V

A

R_gon

R_goff

16

figure 15.

FWD

figure 16.

FWD

Typical reverse recovered energy loss as a function of collector current

Typical reverse recovered energy loss as a function of gate resistor

E_rec= f(I_C)

E_rec= f(R_g)

1,50

1,25

1,00

0,75

0,50

0,25

0,00

1,50

1,25

1,00

0,75

0,50

0,25

0,00

E_rec

0

5

10

15

20

25

30

0

10

20

30

40

50

60

70

I_C(A)

R_g(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

16

V

Ω

125 °C

150 °C

600

±15

15

V

A

125 °C

150 °C

T_j:

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06 Apr. 2021 / Revision 2

80-M212PNB015M7-K778C70

datasheet

Inverter Switching Characteristics

figure 17.

IGBT

figure 18.

IGBT

Typical switching times as a function of collector current

Typical switching times as a function of gate resistor

t = f(I_C)

t = f(R_g)

0

10

0

10

t_d(on)

t_d(off)

t_d(on)

t_f

t_r

-1

10

-1

10

t_r

-2

10

-2

10

-3

10

-3

10

0

5

10

15

20

25

30

0

10

20

30

40

50

60

70

R_g(Ω)

I_C(A)

With an inductive load at

T_j=

150

600

±15

16

°C

V

150

600

±15

15

°C

V_CE

=

V_CE

=

V

A

V_GE

R_gon

R_goff

V_GE

I_C

V

Ω

16

figure 19.

FWD

figure 20.

FWD

Typical reverse recovery time as a function of collector current

Typical reverse recovery time as a function of IGBT turn on gate resistor

t_rr= f(I_C)

t_rr= f(R_gon)

0,6

0,5

0,4

0,3

0,2

0,1

0,0

0,6

0,5

0,4

0,3

0,2

0,1

0,0

t_rr

0

5

10

15

20

25

30

0

10

20

30

40

50

60

70

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

16

V

Ω

125 °C

150 °C

600

±15

15

V

125 °C

150 °C

T_j:

V

A

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06 Apr. 2021 / Revision 2

80-M212PNB015M7-K778C70

datasheet

Inverter Switching Characteristics

figure 21.

FWD

figure 22.

FWD

Typical recovered charge as a function of collector current

Typical recovered charge as a function of turn on gate resistor

Q_r= f(I_C)

Q_r= f(R_gon)

4,5

4,0

3,5

3,0

2,5

2,0

1,5

1,0

0,5

0,0

4,0

3,5

3,0

2,5

2,0

1,5

1,0

0,5

0,0

Q_r

0

5

10

15

20

25

30

0

10

20

30

40

50

60

70

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

16

V

Ω

125 °C

150 °C

600

±15

15

V

125 °C

150 °C

T_j:

V

A

figure 23.

FWD

figure 24.

FWD

Typical peak reverse recovery current as a function of collector current

Typical peak reverse recovery current as a function of turn on gate resistor

I_RM= f(I_C)

I_RM= f(R_gon)

20,0

17,5

15,0

12,5

10,0

7,5

30

25

20

15

10

5

I_RM

5,0

2,5

0,0

0

5

10

15

20

25

30

0

10

20

30

40

50

60

70

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

16

V

Ω

125 °C

150 °C

600

±15

15

V

125 °C

150 °C

T_j:

V

A

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06 Apr. 2021 / Revision 2

80-M212PNB015M7-K778C70

datasheet

Inverter Switching Characteristics

figure 25.

FWD

figure 26.

FWD

Typical rate of fall of forward and reverse recovery current as a function of collector current

Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor

di_F/dt, di_rr/dt = f(I_C)

di_F/dt, di_rr/dt = f(R_gon)

800

2500

2000

1500

1000

500

di_F/dt ‒ ‒ ‒ ‒ ‒

di_rr/dt ──────

700

600

500

400

300

200

100

0

di_rr/dt ──────

0

5

10

15

20

25

30

0

10

20

30

40

50

60

70

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

16

V

Ω

125 °C

150 °C

600

±15

15

V

A

125 °C

150 °C

T_j:

figure 27.

IGBT

Reverse bias safe operating area

I_C= f(V_CE

)

35

I_{C MAX}

30

25

20

15

10

5

0

250

500

750

1000

1250

1500

V

_CE(V)

T_j=

At

150

°C

Ω

R_gon

R_goff

=

16

Ω

Copyright Vincotech

17

06 Apr. 2021 / Revision 2

80-M212PNB015M7-K778C70

datasheet

Inverter Switching Definitions

figure 28.

IGBT

figure 29.

IGBT

Turn-off Switching Waveforms & definition of t_doff, t_Eoff(t_tEoff= integrating time for E_off

)

Turn-on Switching Waveforms & definition of t_don, t_Eon(t_Eon= integrating time for E_on)

t_doff

%

V_{GE 90%}

V_{CE 90%}

I_C

V_GE

V_CE

t_don

t_Eoff

I_{C 1%}

V_{CE 3%}

V_CE

I_{C 10%}

V_{GE 10%}

t_Eon

t (µs)

figure 30.

IGBT

figure 31.

IGBT

Turn-off Switching Waveforms & definition of t_f

Turn-on Switching Waveforms & definition of t_r

fitted

%

I_C

%

I_{C 90%}

I_C

I_{C 60%}

V_CE

I_{C 40%}

I_{C 90%}

t_r

I_C10%

V_CE

C 10%

t_f

t (µs)

Copyright Vincotech

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06 Apr. 2021 / Revision 2

80-M212PNB015M7-K778C70

datasheet

Inverter Switching Definitions

figure 32.

FWD

figure 33.

FWD

Turn-off Switching Waveforms & definition of t_rr

Turn-on Switching Waveforms & definition of t_Qr(t_Qr= integrating time for Q_r)

%

Q_r

%

t_Qr

t_rr

I_F

fitted

RRM 10%

V_F

RRM 90%

RRM 100%

t (µs)

Copyright Vincotech

19

06 Apr. 2021 / Revision 2

80-M212PNB015M7-K778C70

datasheet

Ordering Code

Version

Ordering Code

With std lid (6.5mm height) + no thermal grease

With thin lid (2.8mm height) + no thermal grease

80-M212PNB015M7-K778C70-/0A/

80-M212PNB015M7-K778C70-/0B/

80-M212PNB015M7-K778C70-/1A/

80-M212PNB015M7-K778C70-/1B/

80-M212PNB015M7-K778C70-/4A/

80-M212PNB015M7-K778C70-/4B/

80-M212PNB015M7-K778C70-/5A/

80-M212PNB015M7-K778C70-/5B/

With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)

With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)

With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)

With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)

With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)

With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)

Marking

Name

NN-NNNNNNNNNNNNNN-

TTTTTTVV

Date code

UL & VIN

Lot

Serial

Text

WWYY

UL VIN

LLLLL

SSSS

Type&Ver

Lot number

Serial

Date code

Datamatrix

TTTTTTTVV

LLLLL

SSSS

WWYY

Outline

Pin table [mm]

1

X

Y

Function

DC+3

34

35

36

37

38

39

40

41

42

43

44

45

46

47

48

49

50

51

52

53

54

55

56

57

58

59

60

61

62

63

64

65

not assembled

9 Ph21

24,38

-21,8

0,03

-8,5

2

not assembled

-12,2

not assembled

3

4

24,38

G16

S16

5

-9

6

not assembled

15,4

-21,8

DC+1

7

not assembled

-9

8

9

24,38

G15

S15

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

18,6

-12,22

G12

S12

21,8

DC-3

-5,8

not assembled

0,7

Ph11

not assembled

7,1

-12,22

Ph12

not assembled

15,4

13,42

-21,8

not assembled

-12,2

DC+2

-12,22

-24,38

G11

S11

18,6

21,8

DC-1

DC+Rect

Ph31

-21,8

not assembled

-5,8

not assembled

13,42

8,38

Ph32

Ph22

2,6

-24,38

-12,2

ACin1

not assembled

15,4

not assembled

8,38

2,46

G13

S13

-2,5

ACin2

18,6

not assembled

21,8

-21,8

-18,6

DC-2

Therm1

Therm2

7,1

ACin3

not assembled

-9

21,8

DC-Rect

2,46

G14

S14

33

-5,8

Pad positions refers to center point. For more informations on pad design please see package data

Copyright Vincotech

20

06 Apr. 2021 / Revision 2

80-M212PNB015M7-K778C70

datasheet

Pinout

DC+Rect

53

DC+1

40

DC+2

16

DC+3

1

T16

T12

T14

D15

D11

D13

D46

D42

D44

G12

44

D32

D34

D36

G14

32

G16

4

S12

45

S16

5

S14

33

ACIn1

56

Ph31

19

Ph11

46

Ph21

35

ACIn2

59

Ph32

21

Ph12

48

Ph22

22

ACIn3

62

D31

D33

D35

T15

T11

T13

D16

D12

D14

D45

D41

D43

G15

9

G11

50

G13

25

S13

26

S11

51

S15

10

Rt

DC-1

52

DC-2

27

DC-3

11

DC-Rect

65

Therm1

28

Therm2

29

Identification

Component

Voltage

Current

Function

Comment

ID

T11, T12, T13, T14,

IGBT

1200 V

15 A

5 A

Inverter Switch

Inverter Diode

T15, T16

D11, D12, D13, D14,

D15, D16

FWD

1200 V

1600 V

D41, D42, D43, D44,

D45, D46

Inverter Sw. Prot. Diode

D31, D32, D33, D34,

D35, D36

Rectifier

18 A

Rectifier Diode

Thermistor

Rt

Thermistor

Copyright Vincotech

21

06 Apr. 2021 / Revision 2

80-M212PNB015M7-K778C70

datasheet

Packaging instruction

Handling instruction

Standard packaging quantity (SPQ) 72

>SPQ

Standard

<SPQ

Sample

Handling instructions for MiniSKiiP^®2 packages see vincotech.com website.

Package data

Package data for MiniSKiiP^®2 packages see vincotech.com website.

Vincotech thermistor reference

See Vincotech thermistor reference table at vincotech.com website.

UL recognition and file number

This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.

Document No.:

Date:

Modification:

Pages

80-M212PNB015M7-K778C70-D2-14

6 Apr. 2021

Correct Pinout and Outline

DISCLAIMER

The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to

reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations

that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,

function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said

information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons

or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine

the suitability of the information and the product for reader’s intended use.

LIFE SUPPORT POLICY

Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval

of Vincotech.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or

sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be

reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause

the failure of the life support device or system, or to affect its safety or effectiveness.

Copyright Vincotech

22

06 Apr. 2021 / Revision 2


型号：	80-M212PNB015M7-K778C7
厂家：	VINCOTECH
描述：	Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
文件：	总22页 (文件大小：7244K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

80-M212PNB015M7-K778C7 [VINCOTECH]

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