80-M312PMA150M7-K420A8 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
| 型号： | 80-M312PMA150M7-K420A8 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
| 文件： | 总30页 (文件大小：4512K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
80-M312PMA150M7-K420A80
datasheet
MiniSKiiP® PIM 3
1200 V / 150 A
Features
MiniSkiip® 3 housing
● IGBT M7 with low VCEsat and improved EMC behavior
● Kelvin Emitter for improved switching performance
● Solder-free spring contact technology
● Built-in PTC
Schematic
Target applications
● Industrial Drives
Types
● 80-M312PMA150M7-K420A80
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Rectifier Diode
VRRM
IF
IFSM
I2t
Ptot
Tjmax
Peak repetitive reverse voltage
1600
85
V
A
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
890
3960
119
150
A
50 Hz Single Half Sine Wave
tp = 10 ms
A2s
W
°C
Total power dissipation
Tj = Tjmax
Maximum junction temperature
Copyright Vincotech
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08 Jul. 2019 / Revision 2
80-M312PMA150M7-K420A80
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
1200
159
300
317
±20
175
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
W
V
Maximum junction temperature
°C
Inverter Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
115
300
194
175
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Brake Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
1200
159
300
317
±20
175
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
W
V
Maximum junction temperature
°C
Brake Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
83
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
200
149
175
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Copyright Vincotech
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08 Jul. 2019 / Revision 2
80-M312PMA150M7-K420A80
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
tp = 2 s
5500
2500
6,3
V
Visol
Isolation voltage
AC Voltage
With std lid
tp = 1 min
V
Creepage distance
Clearance
mm
mm
For more informations see handling instructions
With std lid
6,3
For more informations see handling instructions
Comparative Tracking Index
*100 % tested in production
CTI
> 200
Copyright Vincotech
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80-M312PMA150M7-K420A80
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Rectifier Diode
Static
25
1,04
0,97
1,5
Forward voltage
Reverse leakage current
Thermal
VF
IR
60
V
125
25
100
1600
150
µA
2000
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink
0,59
K/W
Copyright Vincotech
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08 Jul. 2019 / Revision 2
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,015
150
25
5,4
6
6,6
V
V
25
1,57
1,80
1,86
1,85
Collector-emitter saturation voltage
VCEsat
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
100
500
µA
nA
Ω
20
3
Cies
Coes
Cres
Qg
30000
880
Output capacitance
#VALUE!
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
320
15
600
150
1000
nC
Thermal
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink
0,30
K/W
Dynamic
25
416
431
433
td(on)
Turn-on delay time
125
150
25
95
Rise time
tr
125
150
25
110
114
300
Rgon = 4 Ω
Rgoff = 4 Ω
ns
Turn-off delay time
Fall time
td(off)
125
150
25
125
150
25
125
150
25
340
346
79
90
±15
600
150
tf
96
21,132
27,106
28,881
9,810
13,007
Qr
FWD
Qr
FWD
Qr
FWD
= 14,7 μC
= 22,6 μC
= 25,6 μC
Turn-on energy (per pulse)
Eon
mWs
125
Eoff
Turn-off energy (per pulse)
150
14,016
Copyright Vincotech
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08 Jul. 2019 / Revision 2
80-M312PMA150M7-K420A80
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode
Static
25
1,80
1,90
1,90
2,1
40
VF
IR
Forward voltage
150
125
150
V
Reverse leakage current
1200
25
µA
Thermal
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink
0,49
K/W
Dynamic
25
63
72
74
IRRM
125
150
25
Peak recovery current
A
409
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
553
623
ns
di/dt = 1573 A/μs
di/dt = 980 A/μs
di/dt = 1114 A/μs
14,682
22,625
25,597
4,968
8,079
9,179
335
Recovered charge
±15
600
150
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
235
218
Copyright Vincotech
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08 Jul. 2019 / Revision 2
80-M312PMA150M7-K420A80
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Brake Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,015
150
25
5,4
6
6,6
V
V
25
1,57
1,80
1,86
1,85
Collector-emitter saturation voltage
VCEsat
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
100
500
µA
nA
Ω
20
3
Cies
Coes
Cres
Qg
30000
880
Output capacitance
#VALUE!
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
320
15
600
150
1000
nC
Thermal
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink
0,30
K/W
Dynamic
25
159
161
161
Turn-on delay time
td(on)
125
150
25
86
Rise time
tr
125
150
25
96
96
487
Rgon = 2 Ω
Rgoff = 2 Ω
ns
Turn-off delay time
Fall time
td(off)
125
150
25
125
150
25
125
150
25
542
562
64
84
0 / 15
700
147
tf
83
22,714
27,831
28,847
11,106
14,536
Qr
FWD
Qr
FWD
Qr
FWD
= 12,3 μC
= 18,2 μC
= 20,2 μC
Turn-on energy (per pulse)
Eon
mWs
125
Eoff
Turn-off energy (per pulse)
150
15,138
Copyright Vincotech
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08 Jul. 2019 / Revision 2
80-M312PMA150M7-K420A80
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Brake Diode
Static
25
1,82
1,96
1,97
2,1
40
VF
IR
Forward voltage
100
125
150
V
Reverse leakage current
1200
25
µA
Thermal
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink
0,64
K/W
Dynamic
25
53
61
65
IRRM
125
150
25
Peak recovery current
A
363
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
486
528
ns
di/dt = 856 A/μs
di/dt = 844 A/μs
di/dt = 827 A/μs
12,337
18,213
20,231
4,518
7,059
7,928
317
0 / 15
700
147
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
224
194
Thermistor
Rated resistance
R
ΔR/R
R
25
1
kΩ
%
Deviation of R100
R100
R100 = 1670 Ω
100
100
25
-2
+2
1670
0,76
Ω
Power dissipation constant
A-value
mW/K
1/K
1/K²
A(25/50)
7,635*10-3
1,731*10-5
25
B(25/100)
B-value
25
Vincotech PTC Reference
E
Copyright Vincotech
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08 Jul. 2019 / Revision 2
80-M312PMA150M7-K420A80
datasheet
Rectifier Diode Characteristics
figure 1.
Rectifier Diode
figure 2.
Rectifier Diode
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
180
150
120
90
60
30
0
Z
10-1
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
0,5
1
1,5
2
VF (V)
tp
=
250
μs
25 °C
D =
tp / T
0,59
Tj:
125 °C
R th(j-s)
=
K/W
Diode thermal model values
R (K/W)
τ (s)
2,18E-02
4,09E-02
1,08E-01
3,14E-01
5,85E-02
3,93E-02
2,71E-03
8,76E+00
7,46E-01
1,33E-01
4,45E-02
8,66E-03
1,33E-03
6,42E-04
Copyright Vincotech
9
08 Jul. 2019 / Revision 2
80-M312PMA150M7-K420A80
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
500
500
VGE
:
7
V
V
V
I
I
8
9
400
10
11
12
13
14
15
16
17
V
V
V
V
V
V
V
V
400
300
200
100
0
300
200
100
0
0
0
1
2
3
4
5
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
=
250
150
μs
°C
VGE
=
V
Tj:
Tj =
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
150
I
120
Z
10-1
90
60
30
0,5
10-2
0,2
0,1
0,05
0,02
0,01
0,005
0
10-3
10-5
0
0
10-4
10-3
10-2
10-1
100
101
tp(s)
102
2
4
6
8
10
12
14
VG E (V)
tp
=
100
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
0,30
K/W
IGBT thermal model values
R (K/W)
τ (s)
2,80E-02
3,19E-02
1,42E-01
6,48E-02
2,08E-02
1,29E-02
1,92E+00
1,07E-01
1,60E-02
5,85E-03
9,51E-04
1,89E-04
Copyright Vincotech
10
08 Jul. 2019 / Revision 2
80-M312PMA150M7-K420A80
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
1000
I
100
10
1
0,1
0,01
1
10
100
1000
10000
VC E (V)
single pulse
80
D =
Ts
=
ºC
VGE
=
0
V
Tj =
Tjmax
Copyright Vincotech
11
08 Jul. 2019 / Revision 2
80-M312PMA150M7-K420A80
datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
500
400
300
200
100
0
10-1
Z
10-2
10-3
10-4
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10-5
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
5
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
Tj:
R th(j-s)
=
0,49
K/W
FWD thermal model values
R (K/W)
τ (s)
1,82E-02
3,42E-02
9,07E-02
2,63E-01
4,90E-02
3,29E-02
2,27E-03
3,65E+00
3,11E-01
5,55E-02
1,86E-02
3,61E-03
5,54E-04
2,68E-04
Copyright Vincotech
12
08 Jul. 2019 / Revision 2
80-M312PMA150M7-K420A80
datasheet
Brake Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
500
500
VGE
:
7
V
V
V
I
I
8
9
400
10
11
12
13
14
15
16
17
V
V
V
V
V
V
V
V
400
300
200
100
0
300
200
100
0
0
0
1
2
3
4
5
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
=
250
150
μs
°C
VGE
=
V
Tj:
Tj =
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
150
I
120
Z
10-1
90
60
30
0,5
10-2
0,2
0,1
0,05
0,02
0,01
0,005
0
10-3
10-5
0
0
10-4
10-3
10-2
10-1
100
101
tp(s)
102
2
4
6
8
10
12
14
VG E (V)
tp
=
100
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
0,30
K/W
IGBT thermal model values
R (K/W)
τ (s)
2,80E-02
3,19E-02
1,42E-01
6,48E-02
2,08E-02
1,29E-02
1,92E+00
1,07E-01
1,60E-02
5,85E-03
9,51E-04
1,89E-04
Copyright Vincotech
13
08 Jul. 2019 / Revision 2
80-M312PMA150M7-K420A80
datasheet
Brake Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
1000
I
100
10
1
0,1
0,01
1
10
100
1000
10000
VC E (V)
single pulse
80
D =
Ts
=
ºC
VGE
=
0
V
Tj =
Tjmax
Copyright Vincotech
14
08 Jul. 2019 / Revision 2
80-M312PMA150M7-K420A80
datasheet
Brake Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
300
250
200
150
100
50
10-1
Z
10-2
10-3
10-4
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
0
10-5
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
5
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
Tj:
R th(j-s)
=
0,64
K/W
FWD thermal model values
R (K/W)
τ (s)
2,37E-02
4,45E-02
1,18E-01
3,42E-01
6,37E-02
4,28E-02
2,95E-03
4,76E+00
4,05E-01
7,23E-02
2,42E-02
4,70E-03
7,22E-04
3,48E-04
Thermistor Characteristics
figure 1.
Typical PTC characteristic
Thermistor
Typical Thermistor resistance values
as a function of temperature
R = f(T)
PTC-typical temperature characteristic
2000
1500
1000
500
0
25
50
75
100
125
T (°C)
Copyright Vincotech
15
08 Jul. 2019 / Revision 2
80-M312PMA150M7-K420A80
datasheet
Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
25 °C
With an inductive load at
With an inductive load at
25 °C
VCE
VGE
=
=
=
=
600
±15
4
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
600
±15
150
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
4
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
600
±15
4
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
600
±15
150
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
16
08 Jul. 2019 / Revision 2
80-M312PMA150M7-K420A80
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
Tj =
150
600
±15
4
°C
V
Tj =
150
600
±15
150
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
4
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon
)
t
t
At
VCE
=
600
±15
4
V
V
Ω
At
VCE
=
600
V
V
A
25 °C
25 °C
VGE
=
=
Tj:
VGE
I C
=
±15
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
150
Copyright Vincotech
17
08 Jul. 2019 / Revision 2
80-M312PMA150M7-K420A80
datasheet
Inverter Switching Characteristics
Typical recovered charge as a function of collector current
Typical recoverdecdhcahragregaesaasfaufnucntciotnioonfoIfGIBGTBtTutrunronnognagtaetreesreisstisotror
Q r = f(I C
)
Q r = f(R gon)
Q
Q
25 °C
At
VCE
VGE
R gon
=
600
±15
V
V
Ω
At
VCE
VGE
I C
=
600
±15
10
VV
2
2
5
5
°C
°C
°C
=
Tj:
=
VV
Tj:
125 °C
150 °C
112255
=
2
=
5
0
AA
115500
Typical peak reverse recovery current current as a function of collector current
I RM = f(I C
)
I RM = f(R gon
)
I
I
25 °C
At
VCE
=
600
±15
V
V
Ω
At
VCE
=
600
VV
2
2
5
5
°C
°C
°C
VGE
=
=
Tj:
VGE
I C
=
±15
V
V
Tj:
125 °C
150 °C
125
125
R gon
2
=
10
5
0
AA
115500
Copyright Vincotech
18
08 Jul. 2019 / Revision 2
80-M312PMA150M7-K420A80
datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
i
At
VCE
=
600
±15
4
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
600
±15
150
V
V
A
25 °C
VGE
R gon
=
=
=
125 °C
Tj:
Tj:
=
150 °C
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
IC MAX
I
I
V
At
Tj =
175
°C
Ω
R gon
R goff
=
=
4
4
Ω
Copyright Vincotech
19
08 Jul. 2019 / Revision 2
80-M312PMA150M7-K420A80
datasheet
Inverter Switching Definitions
General conditions
T j
=
=
=
125 °C
Rgon
Rgoff
1 Ω
1 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
VGE
IC
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
150
267
V
600
150
290
V
A
A
tdoff
=
ns
tdon
=
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
tf =
600
150
90
V
VC (100%) =
I C (100%) =
600
150
73
V
A
A
ns
tr
=
ns
Copyright Vincotech
20
08 Jul. 2019 / Revision 2
80-M312PMA150M7-K420A80
datasheet
Inverter Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
600
150
72
V
I F (100%) =
Q r (100%) =
150
A
A
22,63
μC
A
trr
=
553
ns
Copyright Vincotech
21
08 Jul. 2019 / Revision 2
80-M312PMA150M7-K420A80
datasheet
Brake Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
50
50
E
E
Eon
40
40
Eon
Eon
Eon
Eon
30
20
10
0
30
20
10
0
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
50
100
150
25 °C
200
IC (A)
0
2
4
6
8
10
Rg (Ω)
Tj:
With an inductive load at
With an inductive load at
25 °C
VCE
VGE
=
=
=
=
700
0 / 15
2
V
V
Ω
Ω
VCE
VGE
I C
=
=
=
700
0 / 15
147
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
2
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
10
10
Erec
Erec
E
E
8
8
Erec
Erec
6
4
2
0
6
4
2
0
Erec
Erec
0
2
4
6
8
10
0
50
100
150
200
IC (A)
Rg (Ω)
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
700
0 / 15
2
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
700
0 / 15
147
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
22
08 Jul. 2019 / Revision 2
80-M312PMA150M7-K420A80
datasheet
Brake Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
1
1
td(off)
td(off)
t
t
td(on)
tr
td(on)
tr
0,1
0,1
tf
tf
0,01
0,01
0
2
4
6
8
10
0
50
100
150
200
IC (A)
Rg (Ω)
With an inductive load at
With an inductive load at
Tj =
150
700
0 / 15
2
°C
V
Tj =
150
700
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
0 / 15
147
V
Ω
Ω
A
2
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon)
0,6
0,6
trr
trr
trr
trr
t
t
0,5
0,5
trr
0,4
0,3
0,2
0,1
0
0,4
0,3
0,2
0,1
trr
0
0
0
50
100
150
25 °C
200
2
4
6
8
10
Rgon (Ω)
IC (A)
With an inductive load at
With an inductive load at
25 °C
VCE
=
=
=
700
0 / 15
2
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
700
0 / 15
147
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
Copyright Vincotech
23
08 Jul. 2019 / Revision 2
80-M312PMA150M7-K420A80
datasheet
Brake Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
25
25
Qr
Q
Q
Qr
Qr
Qr
20
20
15
10
5
15
10
5
Qr
Qr
0
0
0
0
50
100
150
25 °C
200
2
4
6
8
10
Rgon (Ω)
IC (A)
With an inductive load at
With an inductive load at
25 °C
VCE
=
=
=
700
0 / 15
2
V
V
Ω
Tj:
VCE=
VGE =
I C=
700
0 / 15
147
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
80
80
I
I
IRM
IRM
60
60
IRM
IRM
IRM
IRM
40
20
40
20
0
0
0
0
2
4
6
8
10
Rgo n (Ω)
50
100
150
25 °C
200
IC (A)
With an inductive load at
With an inductive load at
25 °C
VCE
=
=
=
700
0 / 15
2
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
700
0 / 15
147
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
Copyright Vincotech
24
08 Jul. 2019 / Revision 2
80-M312PMA150M7-K420A80
datasheet
Brake Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
1600
2500
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
i
i
2000
1200
800
400
1500
1000
500
0
0
0
0
2
4
6
8
10
Rgon (Ω)
50
100
150
25 °C
200
IC (A)
With an inductive load at
With an inductive load at
25 °C
VCE
=
=
=
700
0 / 15
2
V
V
Ω
Tj:
VCE =
VGE =
I C=
700
0 / 15
147
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
350
IC MAX
I
300
I
250
200
150
100
50
I
V
0
0
200
400
600
800
1000
1200
1400
VC E (V)
At
Tj =
150
°C
Ω
R gon
R goff
=
=
2
2
Ω
Copyright Vincotech
25
08 Jul. 2019 / Revision 2
80-M312PMA150M7-K420A80
datasheet
Brake Switching Definitions
General conditions
T j
=
=
=
150 °C
Rgon
Rgoff
2 Ω
2 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t (µs)
t (µs)
VGE (0%) =
0
V
VGE (0%) =
0
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
700
147
562
V
700
147
161
V
A
A
tdoff
=
ns
tdon
=
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t (µs)
t (µs)
VC (100%) =
I C (100%) =
tf =
700
147
83
V
VC (100%) =
I C (100%) =
700
147
96
V
A
A
ns
tr
=
ns
Copyright Vincotech
26
08 Jul. 2019 / Revision 2
80-M312PMA150M7-K420A80
datasheet
Brake Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t (µs)
t (µs)
VF (100%) =
I F (100%) =
I RRM (100%) =
700
147
65
V
I F (100%) =
Q r (100%) =
147
20
A
A
μC
A
trr
=
528
ns
Copyright Vincotech
27
08 Jul. 2019 / Revision 2
80-M312PMA150M7-K420A80
datasheet
Ordering Code & Marking
Version
With std lid (6.5mm height) + no thermal grease
With thin lid (2.8mm height) + no thermal grease
Ordering Code
80-M312PMA150M7-K420A80-/0A/
80-M312PMA150M7-K420A80-/0B/
80-M312PMA150M7-K420A80-/1A/
80-M312PMA150M7-K420A80-/1B/
80-M312PMA150M7-K420A80-/4A/
80-M312PMA150M7-K420A80-/4B/
80-M312PMA150M7-K420A80-/5A/
80-M312PMA150M7-K420A80-/5B/
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
PCB pad table
PCB pad table
Pin
X
Y
Pin
X
Y
Function
G5
Function
15,83 -25,3
1
2
48 -32,82 8,74
49 -32,82 11,94
B
B
15,83
15,83
15,83
15,83
15,83
-6,4
-3,2
0
E5
W
W
W
W
3
4
50
51
52
53
54
55
56
57
4,32
4,32
3,42
3,42
22,1
25,3
-B
-B
5
3,2
6,4
-25,3
-22,1
+rect
+rect
6
7
Not assembled
Not assembled
Not assembled
Not assembled
8
9
15,83
15,83
8,13
22,1
25,3
G6
3,42
3,42
-9,3
-6,1
+DC
10
E6
-T
+T
+DC
11
12
13
-25,3
-22,1
Not assembled
58 -39,32 15,7
59 -39,32 18,9
GB
EB
8,13
60 -39,32 22,1
61 -39,32 25,3
62 -40,22 -25,3
63 -40,22 -22,1
-B
-B
14
15
16
17
18
19
20
21
22
8,13
25,3
-DC
Not assembled
+rect
+rect
41,82 -12,18
41,82 -8,98
41,82 -5,79
E3
V
64
Not assembled
Not assembled
V
65
0,43
0,43
22,1
25,3
G4
E4
G3
66 -40,22 -9,3
67 -40,22 -6,09
68 -10,18 -25,3
69 -10,18 -22,1
+DC
+DC
L1
-1,07 -25,3
Not assembled
Not assembled
-1,82 -8,98
-1,82 -5,79
Not assembled
Not assembled
L1
23
24
25
26
27
28
70
Not assembled
Not assembled
V
V
71
72 -10,18 -9,5
73 -10,18 -6,3
L2
L2
74 -10,18
75 -10,18
6,3
9,5
-rect
-rect
L3
-7,27
25,3
-DC
G2
29 -14,97 22,1
30 -14,97 25,3
76 -10,18 22,1
77 -10,18 25,3
78 -53,82 -25,3
79 -53,82 -22,1
E2
L3
31
32
33
34
Not assembled
L1
23,95 -11,82
23,95 -8,63
23,95 -5,42
U
U
L1
80
Not assembled
Not assembled
E1
G1
81
35 -19,22 -25,3
82 -53,82 -9,5
83 -53,82 -6,3
L2
L2
36
37
38
39
40
41
Not assembled
-19,7 -11,82
-19,7 -8,62
U
U
84
Not assembled
85 -53,82
86 -53,82
6,3
9,5
-rect
-rect
L3
Not assembled
17,74
17,74
-1
2,2
+B
+B
87 -53,82 22,1
88 -53,82 25,3
L3
42 -22,67 22,1
43 -22,67 25,3
-DC
-DC
+B
+B
B
44
45
46
47
-25,9
-25,9
10,82
-1
2,2
8,74
10,82 11,94
B
Pad positions refers to center point. For more informations on pad design please see package data
Copyright Vincotech
28
08 Jul. 2019 / Revision 2
80-M312PMA150M7-K420A80
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
D11, D8, D12, D9,
D13, D10
Rectifier
1600 V
60 A
150 A
150 A
Rectifier Diode
Inverter Switch
Inverter Diode
T2, T1, T4, T3, T6,
T5
IGBT
FWD
1200 V
1200 V
D1, D2, D3, D4, D5,
D6
T7
D7
IGBT
FWD
PTC
1200 V
1200 V
150 A
100 A
Brake Switch
Brake Diode
Thermistor
PTC1
Copyright Vincotech
29
08 Jul. 2019 / Revision 2
80-M312PMA150M7-K420A80
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 48
>SPQ
Standard
<SPQ
Sample
Handling instructions for MiniSkiiP® 3 packages see vincotech.com website.
Package data
Package data for MiniSkiiP® 3 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
80-M312PMA150M7-K420A80-D2-14
08 Jul. 2019
Schematic correction
1
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
30
08 Jul. 2019 / Revision 2
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EUROQUARTZ
80.000MHZ49SMD/3/7.5/0+50/8
Parallel - 5Th Overtone Quartz Crystal, 80MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, RESISTANCE WELD, SMD, 3 PIN
EUROQUARTZ
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