V23990-P639-A40-PM [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | V23990-P639-A40-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总29页 (文件大小：9168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-P639-A40-PM
datasheet
flow90PIM 1
1200 V / 8 A
Features
flow90 1 housing
● Trench Fieldstop Technology IGBT4 for low saturation loss
● Supports design with 90° mounting angle between
heatsink and PCB
● Clip-in PCB mounting
● Clip or screw on heatsink mounting
Schematic
Target applications
● Industrial drives
Types
● V23990-P639-A40-PM
Copyright Vincotech
1
30 Sep. 2021 / Revision 3
V23990-P639-A40-PM
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
1200
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
24
61
A
Ptot
W
V
VGES
Gate-emitter voltage
±20
10
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
1200
19
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
20
A
Ptot
46
W
°C
Tjmax
Maximum junction temperature
175
Brake Switch
VCES
Collector-emitter voltage
1200
9
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
12
A
Ptot
39
W
V
VGES
Gate-emitter voltage
±20
10
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
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V23990-P639-A40-PM
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Brake Diode
VRRM
Peak repetitive reverse voltage
1200
10
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
6
A
Ptot
25
W
°C
Tjmax
Maximum junction temperature
150
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
33
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
200
200
44
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
>12,7
11,67
≥ 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
VCE = VGE
0,00015 25
5,3
5,8
6,3
V
V
25
150
1,58
2,07(1)
15
0
8
1,07
1200
0
25
25
1
µA
nA
Ω
20
120
None
490
30
Cies
Input capacitance
pF
pF
f = 1 Mhz
0
25
25
Cres
Reverse transfer capacitance
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,57
K/W
25
57,6
58,8
td(on)
Turn-on delay time
Rise time
ns
ns
150
25
22,6
tr
150
25
22,4
Rgon = 32 Ω
Rgoff = 32 Ω
176,8
243,6
64,27
136,9
0,51
td(off)
Turn-off delay time
Fall time
ns
150
25
±15
600
8
tf
ns
150
25
QrFWD=0,808 µC
QrFWD=1,66 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
150
25
0,826
0,455
0,784
150
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
2,05(1)
2,7
V
VF
IR
Forward voltage
10
25
25
1,35
1,86
Reverse leakage current
Vr = 1200 V
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
2,07
K/W
25
7,24
9,25
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
150
25
241,38
416,06
0,808
1,66
trr
ns
150
25
di/dt=338 A/µs
di/dt=335 A/µs
Qr
±15
600
8
μC
150
25
0,315
0,661
88,58
51,21
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
150
25
(dirf/dt)max
150
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,00015 25
5,3
5,8
2,2
6,3
V
V
25
150
1,58
2,02(1)
15
0
4
1200
0
25
25
0,5
µA
nA
Ω
20
120
None
250
15
Cies
pF
pF
f = 1 Mhz
0
25
25
Cres
Reverse transfer capacitance
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
2,43
K/W
25
83,2
79
td(on)
Turn-on delay time
Rise time
ns
ns
150
25
27,6
tr
150
25
31,8
Rgon = 64 Ω
Rgoff = 64 Ω
178,2
242,8
76,83
131,54
0,255
0,387
0,239
0,407
td(off)
Turn-off delay time
Fall time
ns
150
25
±15
600
4
tf
ns
150
25
QrFWD=0,442 µC
QrFWD=0,949 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
150
25
150
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Diode
Static
25
1,23
1,65
1,52
1,97(1)
27
VF
IR
Forward voltage
3
V
150
Reverse leakage current
Vr = 1200 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
2,8
K/W
25
2,77
3,62
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
150
25
356,63
648,71
0,442
0,949
0,196
0,44
trr
ns
150
25
di/dt=139 A/µs
di/dt=125 A/µs
Qr
±15
600
4
μC
150
25
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
150
25
18,12
14,27
(dirf/dt)max
150
Rectifier Diode
Static
25
0,996
0,907
1,21(1)
1,1(1)
VF
IR
Forward voltage
8
V
125
Reverse leakage current
Vr = 1600 V
25
50
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,59
K/W
Copyright Vincotech
7
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1486 Ω
100
-12
14
200
2
mW
mW/K
K
d
25
B(25/50)
Tol. ±3 %
Tol. ±3 %
3950
3998
B(25/100)
B-value
K
Vincotech Thermistor Reference
B
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
20
20
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
15
10
5
15
10
5
0
0
0
0
2
4
6
8
10
2
4
6
8
10
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
Tj:
VGE
Tj =
150 °C
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
8
10
0
6
4
2
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
1,566
25 °C
Tj:
VCE
150 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,42E-01
6,32E-01
3,98E-01
2,86E-01
1,08E-01
5,98E-01
7,71E-02
2,43E-02
6,16E-03
1,44E-03
Copyright Vincotech
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datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
100
10
1
100µs
1ms
10ms
0,1
0,01
100ms
DC
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
30
25
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
2,066
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
5,09E-02
1,55E-01
7,75E-01
5,33E-01
3,54E-01
1,97E-01
4,26E+00
5,03E-01
7,89E-02
2,68E-02
5,03E-03
9,09E-04
Copyright Vincotech
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datasheet
Brake Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
10,0
10,0
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
7,5
5,0
2,5
7,5
5,0
2,5
0,0
0
0,0
0
2
4
6
8
10
2
4
6
8
10
VCE(V)
V
CE(V)
tp
VGE
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
Tj:
Tj =
150 °C
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
4
10
0
3
2
1
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
2,432
25 °C
Tj:
VCE
150 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
7,91E-02
3,56E-01
1,03E+00
5,26E-01
2,36E-01
2,06E-01
3,00E+00
1,96E-01
5,06E-02
6,13E-03
1,15E-03
3,36E-04
Copyright Vincotech
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datasheet
Brake Switch Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
100
10
1
10µs
100µs
1ms
0,1
0,01
10ms
100ms
DC
1
10
100
1000
10000
CE(V)
V
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
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datasheet
Brake Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
8
6
4
2
0
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,796
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
7,82E-02
1,95E-01
9,84E-01
6,58E-01
5,09E-01
3,71E-01
2,45E+00
2,65E-01
4,77E-02
1,23E-02
2,70E-03
5,98E-04
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datasheet
Rectifier Diode Characteristics
figure 15.
Rectifier
figure 16.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
70
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00 0,25 0,50 0,75 1,00 1,25 1,50 1,75 2,00 2,25
10
10
10
10
VF(V)
tp(s)
tp
=
250
μs
D =
tp / T
1,594
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
3,44E-02
1,12E-01
5,81E-01
4,89E-01
2,38E-01
1,22E-01
1,81E-02
9,66E+00
1,22E+00
1,45E-01
5,05E-02
9,26E-03
1,79E-03
7,88E-04
Copyright Vincotech
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datasheet
Thermistor Characteristics
figure 17.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
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datasheet
Inverter Switching Characteristics
figure 18.
IGBT
figure 19.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Eon
Eon
Eoff
Eon
Eoff
Eon
Eoff
Eoff
0,0
2,5
5,0
7,5
10,0
12,5
15,0
0
25
50
75
100
125
150
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
Ω
150 °C
600
±15
8
V
V
A
150 °C
Rgon
Rgoff
32
figure 20.
FWD
figure 21.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
1,0
0,8
0,6
0,4
0,2
0,0
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Erec
Erec
Erec
Erec
0,0
2,5
5,0
7,5
10,0
12,5
15,0
0
25
50
75
100
125
150
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
150 °C
600
±15
8
V
V
A
150 °C
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datasheet
Inverter Switching Characteristics
figure 22.
IGBT
figure 23.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
tf
-1
10
td(off)
tf
tr
-1
10
td(on)
-2
10
tr
-2
10
-3
10
0,0
2,5
5,0
7,5
10,0
12,5
15,0
0
25
50
75
100
125
150
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
32
°C
V
150
600
±15
8
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
32
figure 24.
FWD
figure 25.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
0,0
2,5
5,0
7,5
10,0
12,5
15,0
0
25
50
75
100
125
150
IC(A)
R
goff(Ω)
25 °C
150 °C
With an inductive load at
With an inductive load at
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
150 °C
600
±15
8
V
V
A
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30 Sep. 2021 / Revision 3
V23990-P639-A40-PM
datasheet
Inverter Switching Characteristics
figure 26.
FWD
figure 27.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
0,0
2,5
5,0
7,5
10,0
12,5
15,0
0
25
50
75
100
125
150
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
150 °C
600
±15
8
V
V
A
150 °C
figure 28.
FWD
figure 29.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
10
25
20
15
10
5
IRM
8
IRM
6
4
IRM
IRM
2
0
0,0
0
2,5
5,0
7,5
10,0
12,5
15,0
0
25
50
75
100
125
150
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
150 °C
600
±15
8
V
V
A
150 °C
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V23990-P639-A40-PM
datasheet
Inverter Switching Characteristics
figure 30.
FWD
figure 31.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
450
2500
2000
1500
1000
500
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
400
dirr/dt ──────
350
300
250
200
150
100
50
0
0,0
0
2,5
5,0
7,5
10,0
12,5
15,0
IC(A)
0
25
50
75
100
125
150
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
150 °C
600
±15
8
V
V
A
150 °C
figure 32.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
17,5
IC MAX
15,0
12,5
10,0
7,5
5,0
2,5
0,0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
32
32
Ω
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V23990-P639-A40-PM
datasheet
Brake Switching Characteristics
figure 33.
IGBT
figure 34.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Eon
Eon
Eoff
Eon
Eoff
Eon
Eoff
Eoff
0
1
2
3
4
5
6
7
8
0
50
100
150
200
250
300
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
64
V
V
Ω
Ω
150 °C
600
±15
4
V
V
A
150 °C
Rgon
Rgoff
64
figure 35.
FWD
figure 36.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,5
0,4
0,3
0,2
0,1
0,0
Erec
Erec
Erec
Erec
0
1
2
3
4
5
6
7
8
0
50
100
150
200
250
300
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
64
V
V
Ω
150 °C
600
±15
4
V
V
A
150 °C
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V23990-P639-A40-PM
datasheet
Brake Switching Characteristics
figure 37.
IGBT
figure 38.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
tf
tr
-1
10
td(off)
tf
-1
10
td(on)
-2
tr
10
-2
10
-3
10
0
1
2
3
4
5
6
7
8
0
50
100
150
200
250
300
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
64
°C
V
150
600
±15
4
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
64
figure 39.
FWD
figure 40.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
1,2
1,0
0,8
0,6
0,4
0,2
0,0
1,2
1,0
0,8
0,6
0,4
0,2
0,0
trr
trr
trr
trr
0
1
2
3
4
5
6
7
8
0
50
100
150
200
250
300
IC(A)
R
goff(Ω)
25 °C
150 °C
With an inductive load at
With an inductive load at
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
64
V
V
Ω
150 °C
600
±15
4
V
V
A
Copyright Vincotech
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30 Sep. 2021 / Revision 3
V23990-P639-A40-PM
datasheet
Brake Switching Characteristics
figure 41.
FWD
figure 42.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,2
1,0
0,8
0,6
0,4
0,2
0,0
Qr
Qr
Qr
Qr
0
1
2
3
4
5
6
7
8
0
50
100
150
200
250
300
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
64
V
V
Ω
150 °C
600
±15
4
V
V
A
150 °C
figure 43.
FWD
figure 44.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
7
6
5
4
3
2
1
0
IRM
IRM
IRM
IRM
0
1
2
3
4
5
6
7
8
0
50
100
150
200
250
300
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
64
V
V
Ω
150 °C
600
±15
4
V
V
A
150 °C
Copyright Vincotech
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30 Sep. 2021 / Revision 3
V23990-P639-A40-PM
datasheet
Brake Switching Characteristics
figure 45.
FWD
figure 46.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
175
1000
800
600
400
200
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
150
125
100
75
50
25
0
0
1
2
3
4
5
6
7
8
0
50
100
150
200
250
300
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
64
V
V
Ω
150 °C
600
±15
4
V
V
A
150 °C
figure 47.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
9
IC MAX
8
7
6
5
4
3
2
1
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
64
64
Ω
Copyright Vincotech
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30 Sep. 2021 / Revision 3
V23990-P639-A40-PM
datasheet
Switching Definitions
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 50.
IGBT
figure 51.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
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30 Sep. 2021 / Revision 3
V23990-P639-A40-PM
datasheet
Switching Definitions
figure 52.
FWD
figure 53.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
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30 Sep. 2021 / Revision 3
V23990-P639-A40-PM
datasheet
Ordering Code
Marking
Version
Ordering Code
V23990-P639-A40-PM
V23990-P639-A40-/3/-PM
Without thermal paste
With thermal paste (3,4 W/mK, PSX-P7)
VIN
VIN
Date code
WWYY
Type&Ver
TTTTTTTVV
Serial
UL
UL
Lot
Serial
Text
LLLLL
SSSS
Type&Ver
Lot number
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
0
0
0
0
0
0
0
0
0
0
7
7
7
7
7
7
7
7
7
7
7
Function
L2
53
46
39,5
32,5
28,1
18
15
12
9
2
BrC
DC-
DC+
Inv+
WLG
WL
3
4
5
6
7
8
VLG
VL
9
10
11
12
13
14
15
16
17
18
19
20
21
22
3
ULG
UL
0
0
UHG
U
3
8,5
11,5
17
20
33
36
39
46
53
VHG
V
WHG
W
NTC
BrE
BrG
L3
L1
Copyright Vincotech
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V23990-P639-A40-PM
datasheet
Pinout
DC+
4
Inv+
5
D11
D13
D9
T1
T3
T5
D7
D3
D1
D5
UHG
12
VHG
14
WHG
16
L1
22
U
13
BrC
2
L2
1
V
15
W
L3
21
17
T7
T2
T4
T6
D2
D4
D6
D8
D10
BrG
20
D12
ULG
10
VLG
8
WLG
6
NTC
BrE
19
NTC
18
UL
11
VL
9
WL
7
DC-
3
Identification
Component
Voltage
Current
Function
Comment
ID
T2, T1, T4, T3, T6, T5
IGBT
1200 V
8 A
Inverter Switch
Inverter Diode
D1, D2, D3, D4, D5,
FWD
1200 V
10 A
D6
T7
IGBT
FWD
1200 V
1200 V
4 A
3 A
Brake Switch
Brake Diode
D7
D8, D9, D10, D11,
D12, D13
Rt
Rectifier
1600 V
25 A
Rectifier Diode
Thermistor
Thermistor
Copyright Vincotech
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30 Sep. 2021 / Revision 3
V23990-P639-A40-PM
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 80
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow90 1 packages see vincotech.com website.
Package data
Package data for flow90 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Change of Isolation voltage
Change of Clearance distance
Change of Rth values from P12 to PSX
Change of Rectifier Diode Vf condition
V23990-P639-A40-PM-D3-14
30 Sep. 2021
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
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30 Sep. 2021 / Revision 3
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