EGF1C-E3/2KA [VISHAY]
Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, DO-214BA, ROHS COMPLIANT, PLASTIC, GF1, 2 PIN;
| 型号： | EGF1C-E3/2KA |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, DO-214BA, ROHS COMPLIANT, PLASTIC, GF1, 2 PIN 光电二极管 |
| 文件： | 总4页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EGF1A thru EGF1D
Vishay General Semiconductor
Surface Mount Glass Passivated Ultrafast Rectifier
FEATURES
• Cavity-free glass-passivated junction
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Meets MSL level 1, per J-STD-020C, LF max peak
of 250 °C
* Glass-plastic encapsulation
technique is covered by patent
No. 3,996,602, brazed-lead
DO-214BA (GF1)
• Solder Dip 260 °C, 40 seconds
assembly by Patent No. 3,930,306
and lead forming by Patent No. 5,151,846
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and free-
wheeling application in switching mode converters and
inverters for consumer, computer, automotive and
telecommunication.
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
VRRM
IFSM
trr
1.0 A
50 V to 200 V
30 A
MECHANICAL DATA
Case: DO-214BA, molded epoxy over glass body
Epoxy meets UL 94V-0 flammability rating
50 ns
VF
1.0 V
Tj max.
175 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
EGF1A
EA
EGF1B
EB
EGF1C
EC
EGF1D
ED
UNIT
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
100
70
150
200
V
V
V
A
35
105
140
Maximum DC blocking voltage
Maximum average forward rectified current at TL = 125 °C
50
100
150
200
IF(AV)
1.0
30
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
A
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
Document Number 88579
26-Jun-06
www.vishay.com
1
EGF1A thru EGF1D
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
SYMBOL EGF1A
EGF1B
EGF1C
EGF1D
UNIT
Maximum instantaneous forward voltage
at 1.0 A
VF
1.0
V
Maximum DC reverse current at rated DC
blocking voltage (1)
TA = 25 °C
TA = 125 °C
5.0
50
IR
µA
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
Typical reverse recovery time
Typical junction capacitance
trr
50
15
ns
at 4.0 V, 1 MHz
CJ
pF
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL EGF1A
EGF1B
EGF1C
EGF1D
UNIT
RθJA
RθJL
85
30
Typical thermal resistance (1)
°C/W
Note:
(1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
ORDERING INFORMATION
PREFERRED P/N
EGF1D-E3/67A
EGF1D-E3/5CA
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.104
67A
5CA
1500
6500
7" Diameter Plastic Tape & Reel
13" Diameter Plastic Tape & Reel
0.104
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise specified)
A
1.0
30
25
20
15
10
5.0
0
Tj = Tj max.
8.3 ms Single Half Sine-Wave
0.5
Resistive or Inductive Load
P.C.B. Mounted on 0.2 x 0.2"
(5.0 x 5.0 mm) Copper Pad Areas
0
1
10
100
0
25
50
75
100
125
150
175
Lead Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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Document Number 88579
26-Jun-06
EGF1A thru EGF1D
Vishay General Semiconductor
50
10
70
60
50
40
30
20
10
0
T
j
= 25 °C
f = 1.0 MHz
sig = 50 mVp-p
V
Tj = 150 °C
1
Tj
= 25 °C
0.1
Pulse Width = 300 µs
1 % Duty Cycle
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.1
1
10
100
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
1000
100
100
10
1
Tj = 150 °C
10
1
Tj = 100 °C
0.1
0.01
Tj = 25 °C
0.1
0
20
40
60
80
100
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Leakage Characteristics
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214BA (GF1)
Cathode Band
Mounting Pad Layout
0.076 MAX.
(1.93 MAX.)
0.066 (1.68)
0.066 MIN.
(1.68 MIN.)
0.040 (1.02)
0.187 (4.75)
0.167 (4.24)
0.015 (0.38)
0.060 MIN.
(1.52 MIN.)
0.0065 (0.17)
0.108 (2.74)
0.098 (2.49)
0.118 (3.00)
0.100 (2.54)
0.220
(5.58) REF
0.114 (2.90)
0.094 (2.39)
0.006 (0.152) TYP.
0.060 (1.52)
0.030 (0.76)
0.226 (5.74)
0.196 (4.98)
Document Number 88579
26-Jun-06
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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1
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