HFA40HF120 [VISHAY]
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 11A, 1200V V(RRM), Silicon, HERMETIC SEALED, SMD-1, 3 PIN;
| 型号： | HFA40HF120 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 11A, 1200V V(RRM), Silicon, HERMETIC SEALED, SMD-1, 3 PIN |
| 文件： | 总5页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-20376A
HFA40HF120
Ultrafast, Soft Recovery Diode
FRED
Features
• Reduced RFI and EMI
• Reduced Snubbing
VR = 1200V
VF = 3.1V
• Extensive Characterization of Recovery Parameters
• Hermetic
• Surface Mount
Qrr = 510nC
di(rec)M/dt = 350A/µs
Description
These Ultrafast,soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power
conditioning systems. An extensive characterization of the recovery behavior for different values of current,
temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors
drives and other applications where switching losses are significant portion of the total losses.
Absolute Maximum Ratings
Parameter
Cathode to Anode Voltage
Max.
1200
Units
V
VR
IF(AV)
Continuous Forward Current, TC = 100°C
Single Pulse Forward Current, TC = 25°C
Maximum Power Dissipation
11
A
IFSM
190
PD @ TC = 25°C
TJ, TSTG
83
W
Operating Junction and Storage Temperature Range
-55 to +150
°C
Note: D.C. = 50% rect. wave
1/2 sine wave, 60 Hz , P.W. = 8.33 ms
CASE STYLE
(ISOLATEDBASE)
CATHODE
ANODE
SMD-1
www.irf.com
1
04/20/10
HFA40HF120
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Cathode Anode Breakdown Voltage
Forward Voltage
Min. Typ. Max. Units
Test Conditions
IR = 100µA
VBR
VF
1200
—
—
3.1
4.0
2.7
10
V
—
IF = 11A
See Fig. 1
—
V
IF = 22A
—
IF = 11A, TJ = 125°C
VR = VR Rated
IR
Max Reverse Leakage Current
See Fig. 2
—
—
—
µA
mA
pF
—
1.0
42
V
R = 960V, TJ = 125°C
CT
LS
Junction Capacitance, See Fig. 3
Series Inductance
—
28
5.9
VR = 200V
—
—
nH Measured from center of cathode
pad the center of anode pad
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
trr1
Reverse Recovery Time
—
—
—
—
—
—
—
—
80 120
130 195
7.25 10.9
10.2 15.3
340 510
825 1240
230 350
160 240
ns TJ = 25°C See Fig.
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C
TJ = 25°C See Fig.
trr2
5
IF = 11A
VR = 200V
IRRM1
IRRM2
Qrr1
Qrr2
Peak Recovery Current
A
6
Reverse Recovery Charge
nC
7
dif/dt = 200A/µs
di(rec)M/dt1 Peak Rate of Fall of Recovery Current
di(rec)M/dt2 During tb
A/µs
TJ = 125°C
8
Thermal - Mechanical Characteristics
Parameter
Junction-to-Case
Typ.
—
2.6
Max.
1.5
—
Units
°C/W
g
RthJC
Wt
Weight
2
www.irf.com
HFA40HF120
100
10
1
10000
1000
100
10
T = 150°C
J
T = 125°C
J
1
T = 25°C
J
T = 150°C
J
0.1
T = -55°C
J
0.01
0.001
T = 125°C
J
T = 25°C
J
0
300
600
900
1200
Reverse Voltage - V (V)
R
Fig. 2 - Typical Reverse Current Vs. Reverse Voltage
A
1000
T = 25°C
J
100
0.0
2.0
4.0
6.0
8.0
10.0
Forward Voltage Drop - V
(V)
FM
Fig. 1 - Maximum Forward Voltage Drop Vs.
10
1
10
100
1000
Instantaneous Forward Current
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
10
1
D = 0.50
0.20
0.10
P
2
DM
0.05
0.1
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
thJC C
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
www.irf.com
3
HFA40HF120
250
100
10
1
I
I
= 22A
= 11A
F
F
200
150
100
50
I
= 22A
= 11A
= 5.5A
I
= 5.5A
F
F
I
I
F
F
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
0
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 5 - Typical Reverse Recovery vs. dif/dt,
Fig. 6 - Typical Recovery Current vs. dif/dt,
10000
10000
VR = 200V
TJ = 125°C
TJ = 25°C
I
I
= 22A
= 11A
= 5.5A
F
I
F
F
1000
1000
100
I
I
I
= 5.5A
= 11A
= 22A
F
F
F
VR = 200V
TJ = 125°C
TJ = 25°C
100
100
10
100
1000
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 8 - Typical di(rec)M/dt vs. dif/dt
Fig. 7 - Typical Stored Charge vs. dif/dt
4
www.irf.com
HFA40HF120
3
t
rr
I
F
t
t
a
b
0
REVERSE RECOVERY CIRCUIT
4
Q
rr
V
= 200V
2
R
I
0.5
RRM
I
RRM
5
di(rec)M/dt
0.01
Ω
0.75 I
RRM
L = 70µH
1
di /dt
f
D.U.T.
4.Qrr -Areaundercurvedefinedbytrr
1.dif/dt-Rateofchangeofcurrent
through zero crossing
D
and IRRM
dif/dt
trr X IRRM
ADJUST
IRFP250
G
2.IRRM-Peakreverserecoverycurrent
Qrr =
2
3.trr-Reverserecoverytimemeasured
fromzerocrossingpointofnegative
goingIF topointwherealinepassing
through0.75IRRM and0.50IRRM
extrapolatedtozerocurrent
S
5.di(rec)M/dt-Peakrateofchangeof
current during tb portion of trr
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveformand Definitions
Case Outline and Dimensions — SMD-1
PAD ASSIGNMENTS
1 = CATHODE
2 = ANODE
3 = N / C
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/2010
www.irf.com
5
相关型号：
HFA40HF120PBF
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 11A, 1200V V(RRM), Silicon, HERMETIC SEALED, SMD-1, 3 PIN
VISHAY
HFA40HF60
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 22A, 600V V(RRM), Silicon, HERMETIC SEALED, SMD-1, 3 PIN
VISHAY
HFA40HF60CSCV
600V 30A Hi-Rel Ultra-Fast Common Cathode Diode in a SMD-1 package. - Screening Level TXV
INFINEON
HFA40HF60CSCX
600V 30A Hi-Rel Ultra-Fast Common Cathode Diode in a SMD-1 package. - Screening Level TX
INFINEON
HFA40HF60PBF
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 22A, 600V V(RRM), Silicon, HERMETIC SEALED, SMD-1, 3 PIN
VISHAY
HFA45HC120CDPBF
Rectifier Diode, Avalanche, 1 Phase, 2 Element, 28A, Silicon, HERMETIC SEALED PACKAGE-3
INFINEON
©2020 ICPDF网 联系我们和版权申明