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IMBD4448-GS18 [VISHAY]

Rectifier Diode, 1 Element, 0.15A, 100V V(RRM),;
IMBD4448-GS18
型号： IMBD4448-GS18
厂家： VISHAY    VISHAY
描述：

Rectifier Diode, 1 Element, 0.15A, 100V V(RRM),

二极管
文件： 总5页 (文件大小：101K)
中文：  中文翻译
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IMBD4448  
Vishay Semiconductors  
VISHAY  
Small Signal Switching Diode  
Features  
• Silicon Epitaxial Planar Diodes  
3
• Fast switching diode in case SOT-23, especially  
suited for automatic insertion.  
• This diodes are also available in other case styles  
including: the DO-35 case with the type  
1
2
16923  
designation 1N4448, the Mini-MELF case with the  
type designation LL4448, and the SOD-123 case  
with the type designation 1N4448W.  
Mechanical Data  
Case: SOT-23 Plastic case  
Weight: approx. 8.8 mg  
Packaging Codes/Options:  
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box  
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box  
Parts Table  
Part  
Ordering code  
Marking  
Remarks  
IMBD4448  
IMBD4448-GS18 or IMBD4448-GS08  
A3  
Tape and Reel  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
75  
Unit  
Reverse voltage  
V
V
V
R
Peak reverse voltage  
V
100  
RM  
1)  
Rectified current (average) half  
wave rectification with resist.  
T
= 25 °C and f ≥ 50 Hz  
I
mA  
amb  
F(AV)  
150  
Surge forward current  
Power dissipation  
t < 1 s and T = 25 °C  
I
500  
mA  
j
FSM  
1)  
T
= 25 °C  
P
mW  
amb  
tot  
350  
1)  
Device on fiberglass substrate, see layout (SOT-23).  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
1)  
Thermal resistance junction to  
ambient air  
R
°C/W  
thJA  
450  
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
- 65 to + 150  
S
1)  
Device on fiberglass substrate, see layout (SOT-23).  
Document Number 85732  
Rev. 1.4, 08-Jul-04  
www.vishay.com  
1
IMBD4448  
Vishay Semiconductors  
VISHAY  
Electrical Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
= 5 mA  
Symbol  
Min  
Typ.  
Max  
0.72  
Unit  
V
Forward voltage  
Leakage current  
I
I
V
0.62  
F
F
F
F
= 100 mA  
= 70 V  
V
1.0  
2.5  
50  
30  
4
V
V
V
V
V
I
I
I
µA  
µA  
µA  
pF  
ns  
R
R
R
F
R
= 70 V, T = 150 °C  
j
R
R
= 25 V, T = 150 °C  
j
Diode capacitance  
= V = 0  
C
R
tot  
Reverse recovery time  
(see figures)  
I
= 10 mA, I = 10 mA,  
t
4
F
R
rr  
V
= 6 V, R = 100 Ω  
L
R
Layout for R  
test  
thJA  
Thickness:  
Fiberglass 1.5 mm (0.059 in.)  
Copper leads 0.3 mm (0.012 in.)  
7.5 (0.3)  
3 (0.12)  
1 (0.4)  
2 (0.8)  
2 (0.8)  
1 (0.4)  
12 (0.47)  
0.8 (0.03)  
15 (0.59)  
5 (0.2)  
1.5 (0.06)  
5.1 (0.2)  
17451  
Typical Characteristics (Tamb = 25 °C unless otherwise specified)  
1000  
100  
10  
10000  
1000  
100  
°
T = 25  
C
j
f = 1 kHz  
°
T = 100  
j
C
°
25  
C
1
10  
1
0.1  
0.01  
0
0.2 0.4 0.6 0.8  
1 1.2 1.4 1.6 1.8 2  
0.01  
0.1  
1
10  
100  
18662  
I
F
- Forward Current ( mA )  
18689  
V
F
- Forward Voltage ( V )  
Figure 1. Forward Current vs. Forward Voltage  
Figure 2. Dynamic Forward Resistance vs. Forward Current  
www.vishay.com  
Document Number 85732  
Rev. 1.4, 08-Jul-04  
2
IMBD4448  
Vishay Semiconductors  
VISHAY  
1000  
800  
1.1  
1.0  
0.9  
°
C
T = 25  
j
f = 1 MHz  
600  
400  
0.8  
0.7  
200  
0
0
20 40 60 80 100 120 140 160 180 200  
- Ambient Temperature ( °C )  
0
2
4
6
8
10  
18664  
18663  
T
amb  
V
- Reverse Voltage ( V )  
R
Figure 3. Admissible Power Dissipation vs. Ambient Temperature  
Figure 4. Relative Capacitance vs. Reverse Voltage  
100  
I
ν
= t /T  
p
T = 1/f  
p
ν
= 0  
I
FRM  
10  
1
t
p
t
0.1  
T
0.2  
0.5  
-5  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
10  
1
10  
18709  
t
p
- Pulse Length ( s )  
Figure 5. Admissible Repetitive Peak Forward Current vs. Pulse Duration  
Document Number 85732  
Rev. 1.4, 08-Jul-04  
www.vishay.com  
3
IMBD4448  
Vishay Semiconductors  
VISHAY  
Package Dimensions in mm (Inches)  
0.175 (.007)  
0.098 (.005)  
0.1 (.004) max.  
2.6 (.102)  
2.35 (.092)  
0.4 (.016)  
0.4 (.016)  
ISO Method E  
3.1 (.122)  
Mounting Pad Layout  
2.8 (.110)  
0.4 (.016)  
0.52 (0.020)  
3
0.9 (0.035)  
2.0 (0.079)  
1
2
0.95 (.037)  
0.95 (.037)  
0.95 (0.037)  
0.95 (0.037)  
17418  
www.vishay.com  
4
Document Number 85732  
Rev. 1.4, 08-Jul-04  
IMBD4448  
Vishay Semiconductors  
VISHAY  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and  
operatingsystems with respect to their impact on the health and safety of our employees and the public, as  
well as their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the  
use of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Document Number 85732  
Rev. 1.4, 08-Jul-04  
www.vishay.com  
5

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