IMBD4448-HE3-18 [VISHAY]
Small Signal Switching Diode;型号: | IMBD4448-HE3-18 |
厂家: | VISHAY |
描述: | Small Signal Switching Diode |
文件: | 总5页 (文件大小:104K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IMBD4448
Vishay Semiconductors
www.vishay.com
Small Signal Switching Diode
FEATURES
• Silicon epitaxial planar diode
3
• Fast switching diode in case SOT-23, especially
suited for automatic insertion.
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
1
2
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.8 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
ORDERING CODE
CIRCUIT CONFIGURATION
TYPE MARKING
REMARKS
IMBD4448-E3-08 or IMBD4448-E3-18
IMBD4448-HE3-08 or IMBD4448-HE3-18
IMBD4448
Single
A3
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
75
UNIT
Reverse voltage
Peak reverse voltage
VR
V
V
VRM
100
Rectified current (average) half wave
rectification with resistive load (1)
f 50 Hz
IF(AV)
150
mA
Surge forward current
Power dissipation (1)
t < 1 s and TJ = 25 °C
IFSM
Ptot
500
350
mA
mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air (1)
TEST CONDITION
SYMBOL
RthJA
Tj
VALUE
450
UNIT
K/W
°C
Junction temperature
150
Storage temperature range
Operating temperature range
Tstg
-65 to +150
-55 to +150
°C
Top
°C
Note
(1)
Device on fiberglass substrate, see layout on next page
Rev. 1.8, 13-Feb-18
Document Number: 85732
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IMBD4448
Vishay Semiconductors
www.vishay.com
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
0.72
1
UNIT
V
IF = 5 mA
VF
VF
IR
0.62
Forward voltage
IF = 100 mA
V
VR = 70 V
2500
50
nA
μA
μA
pF
Leakage current
V
R = 70 V, Tj = 150 °C
IR
VR = 25 V, Tj = 150 °C
VF = VR = 0 V
IR
30
Diode capacitance
CD
4
IF = 10 mA to iR = 1 mA,
Reverse recovery time
trr
4
ns
VR = 6 V, RL = 100
LAYOUT FOR RthJA TEST
Thickness:
Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
2 (0.8)
1 (0.4)
12 (0.47)
0.8 (0.03)
15 (0.59)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
100
10
10000
1000
100
°
T = 25 C
j
f = 1 kHz
°
T = 100
j
C
°
25
C
1
10
1
0.1
0.01
0
0.2 0.4 0.6 0.8
1 1.2 1.4 1.6 1.8 2
0.01
0.1
1
10
100
18689
V
F
- Forward Voltage ( V )
I
F
- Forward Current (mA)
18662
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
Rev. 1.8, 13-Feb-18
Document Number: 85732
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IMBD4448
Vishay Semiconductors
www.vishay.com
500
400
300
200
100
0
1.1
1.0
0.9
°
T = 25 C
j
f = 1 MHz
0.8
0.7
0
2
4
6
8
10
0
20 40 60 80 100 120 140 160180 200
- Ambient Temperature ( °C )
V
- Reverse Voltage (V)
18664
R
18663
T
amb
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 4 - Relative Capacitance vs. Reverse Voltage
100
I
ν= t
/T
T = 1/f
p
p
ν
= 0
IFRM
T
10
1
t
p
t
0.1
0.2
0.5
-5
-4
-3
-2
-1
18709
10
10
10
10
- Pulse Length (s)
10
1
10
t
p
Fig. 5 - Admissible Repetitive Peak Forward Current vs. Pulse Duration
Rev. 1.8, 13-Feb-18
Document Number: 85732
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IMBD4448
Vishay Semiconductors
www.vishay.com
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
3.1 (0.122)
2.8 (0.110)
0.550 ref. (0.022 ref.)
0.5 (0.020)
0.3 (0.012)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
0° to 8°
2.6 (0.102)
2.35 (0.093)
0.45 (0.018)
0.35 (0.014)
Foot print recommendation:
0.7 (0.028)
1 (0.039)
0.9 (0.035)
1 (0.039)
0.9 (0.035)
0.95 (0.037)
0.95 (0.037)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
Rev. 1.8, 13-Feb-18
Document Number: 85732
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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