SI1021R-E3 [VISHAY]
Transistor;
VISHAY 
Si1021R
Vishay Siliconix
New Product
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS(min) (V)
rDS(on)
(
ꢀ
)
VGS(th) (V)
ID (mA)
–60
4 @ V = –10 V
–1 to –3.0
–190
GS
FEATURES
BENEFITS
APPLICATIONS
D High-Side Switching
D Ease in Driving Switches
D Low Offset Voltage
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Low On-Resistance: 4 Ω
D Low Threshold: –2 V (typ)
D Fast Switching Speed: 20 ns (typ)
D Low Input Capacitance: 20 pF (typ)
D Miniature Package
D Battery Operated Systems
D Power Supply Converter Circuits
D Solid-State Relays
D Low-Voltage Operation
D High-Speed Circuits
D Easily Driven Without Buffer
D Small Board Area
D Gate-Source ESD Protection
SC-75A
(SOT-416)
G
S
1
2
3
D
Marking Code: F
Top View
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
–60
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
GS
V
V
"20
T
= 25_C
= 85_C
–190
–135
A
a
Continuous Drain Current (T = 150__C)
I
J
D
T
A
mA
b
Pulse Drain Current
I
–650
DM
T
= 25_C
= 85_C
250
A
a
P
Power Dissipation
D
mW
T
130
A
a
Maximum Junction-to-Ambient
R
thJA
500
_C/W
_C
Operating Junction and Storage Temperature Range
T , T
–55 to 150
J
stg
Notes
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71410
S-21120—Rev. C, 01-Jul-02
www.vishay.com
1
Si1021R
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V
V
= 0 V, I = –10 ꢁA
–60
–1
(BR)DSS
GS
D
V
V
V
= V , I = –0.25 mA
–3.0
"10
GS(th)
DS
GS D
V
= 0 V, V = "20 V
ꢁA
DS
DS
GS
V
= 0 V, V = "10 V
"200
"500
"100
–25
GS
Gate-Body Leakage
I
GSS
V
= 0 V, V = "10 V, T = 85_C
DS
GS
J
V
= 0 V, V = "5 V
GS
nA
DS
V
= –50 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
DSS
V
= –50 V, V = 0 V, T = 85_C
–250
DS
GS
J
V
= –10 V, V = –4.5 V
–50
DS
GS
a
On-State Drain Current
I (on)
D
mA
V
= –10 V, V = –10 V
–600
DS
GS
GS
GS
V
= –4.5 V, I = –25 mA
8
4
6
D
a
V
= –10 V, I = –500 mA
Drain-Source On-Resistance
r
ꢀ
D
DS(on)
V
= –10 V, I = –500 mA, T = 125_C
GS
D
J
a
Forward Transconductance
g
fs
V
= –10 V, I = –100 mA
80
mS
V
DS
D
a
Diode Forward Voltage
V
I
S
= –200 mA, V = 0 V
–1.4
SD
GS
Dynamic
Total Gate Charge
Q
1.7
0.26
0.46
23
g
Gate-Source Charge
Gate-Drain Charge
Q
Q
V
= –30 V, V = –15 V, I ^ –500 mA
nC
pF
gs
gd
iss
DS
GS
D
Input Capacitance
C
C
Output Capacitance
Reverse Transfer Capacitance
10
V
= –25 V, V = 0 V, f = 1 MHz
GS
oss
DS
C
rss
5
Switchingb
Turn-On Time
Turn-Off Time
t
20
35
V
= –25 V, R = 150 ꢀ
L
ON
DD
ns
I
D
^ –200 mA, V
= –10 V
GEN
t
OFF
R
G
= 10 ꢀ
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Switching time is essentially independent of operating temperature.
Document Number: 71410
S-21120—Rev. C, 01-Jul-02
www.vishay.com
2
Si1021R
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
1.0
1200
900
600
300
0
V
= 10 V
GS
T = –55_C
J
7 V
6 V
0.8
0.6
0.4
0.2
0.0
8 V
25_C
125_C
5 V
4 V
0
1
2
3
4
5
0
2
4
6
8
10
V
– Drain-to-Source Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
DS
On-Resistance vs. Drain Current
Capacitance
40
32
24
16
8
20
16
12
8
V
= 0 V
GS
V
= 4.5 V
GS
C
iss
V
= 5 V
GS
C
oss
V
= 10 V
GS
4
C
rss
0
0
0
5
10
15
20
25
0
200
400
600
800
1000
I
D
– Drain Current (mA)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
15
12
9
1.8
1.5
1.2
0.9
0.6
0.3
0.0
I
D
= 500 mA
V
= 30 V
DS
V
= 10 V @ 500 mA
GS
V
= 48 V
DS
V
= 4.5 V @ 25 mA
GS
6
3
0
0.0
0.3
0.6
0.9
1.2
1.5
1.8
–50 –25
0
J
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T
– Junction Temperature (_C)
Document Number: 71410
S-21120—Rev. C, 01-Jul-02
www.vishay.com
3
Si1021R
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-Source Voltage
10
8
1000
V
= 0 V
GS
I
D
= 500 mA
100
6
T = 125_C
J
4
I
D
= 200 mA
10
1
T = 25_C
J
2
T = –55_C
J
0
0
2
4
6
8
10
0.00
0.3
0.6
0.9
1.2
1.5
V
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
SD
Threshold Voltage Variance Over Temperature
Single Pulse Power, Junction-to-Ambient
0.5
3
0.4
2.5
I
D
= 250 ꢁA
0.3
2
0.2
1.5
0.1
–0.0
–0.1
–0.2
–0.3
1
0.5
0
T
A
= 25_C
–50 –25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
J
– Junction Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 500_C/W
thJA
(t)
Z
3. T – T = P
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 71410
S-21120—Rev. C, 01-Jul-02
www.vishay.com
4
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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