SI3471CDV-T1-E3 [VISHAY]
P-Channel 12-V (D-S) MOSFET; P通道12 -V （D -S ）的MOSFET
| 型号： | SI3471CDV-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 12-V (D-S) MOSFET |
| 文件： | 总7页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
Si3471CDV
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET® Power MOSFET
VDS (V)
rDS(on) (Ω)
Qg (Typ.)
I
D (A)a
- 8
•
PWM Optimized
0.027 at VGS = - 4.5 V
0.036 at VGS = - 2.5 V
0.048 at VGS = - 1.8 V
RoHS
COMPLIANT
APPLICATIONS
- 12
- 8
20 nC
•
Load Switch
- 7.5
•
PA Switch
TSOP-6
Top View
(4) S
1
2
3
6
3 mm
5
4
(3) G
Marking Code
AQ XXX
Lot Traceability
and Date Code
Part # Code
2.85 mm
(1, 2, 5, 6) D
Ordering Information: Si3471CDV-T1-E3 (Lead (Pb)-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
Limit
- 12
8
Unit
V
VGS
- 8a
- 8a
TC = 25 °C
C = 70 °C
T
Continuous Drain Current (TJ = 150 °C)
ID
- 7.4b, c
- 5.9b, c
- 20
TA = 25 °C
TA = 70 °C
A
IDM
IS
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
- 3.2
- 1.67b, c
Continuous Source-Drain Diode Current
T
C = 25 °C
3.8
TC = 70 °C
TA = 25 °C
TA = 70 °C
2.4
PD
Maximum Power Dissipation
W
2.0b, c
1.3b, c
TJ, Tstg
- 55 to 150
°C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
Symbol
RthJA
RthJF
Typical
55
Maximum
62.5
Unit
t ≤ 5 s
Steady State
°C/W
27
33
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 110 °C/W.
Document Number: 69943
S-80434-Rev. A, 03-Mar-08
www.vishay.com
1
New Product
Si3471CDV
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
Drain-Source Breakdown Voltage
- 12
V
V
DS Temperature Coefficient
- 11
3
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS = VGS , ID = - 250 µA
- 0.4
- 20
- 1.0
100
- 1
V
IGSS
VDS = 0 V, VGS
=
8 V
nA
VDS = - 12 V, VGS = 0 V
DS = - 12 V, VGS = 0 V, TJ = 85 °C
VDS ≤ - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 7.3 A
VGS = - 2.5 V, ID = - 6.3 A
VGS = - 1.8 V, ID = - 2.1 A
VDS = - 6 V, ID = - 7.3 A
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
- 10
ID(on)
0.021
0.027
0.035
26
0.027
0.036
0.048
Drain-Source On-State Resistancea
rDS(on)
Ω
Forward Transconductancea
gfs
S
Dynamicb
Ciss
Coss
Crss
Input Capacitance
1600
450
400
32
V
DS = - 6 V, VGS = 0 V, f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
VDS = - 6 V, VGS = - 8 V, ID = - 7.3 A
50
30
Total Gate Charge
Qg
20
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
V
DS = - 6 V, VGS = - 4.5 V, ID = - 7.3 A
f = 1 MHz
2.7
5.4
4.5
20
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
30
80
75
35
15
25
75
25
52
V
DD = - 6 V, RL = 1 Ω
ID ≅ - 5.9 A, VGEN = - 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
50
22
ns
Turn-On Delay Time
Rise Time
10
15
V
DD = - 6 V, RL = 1 Ω
ID ≅ - 5.9 A, VGEN = - 8 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
50
15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
ISM
VSD
trr
TC = 25 °C
IS = - 5.9 A
- 3.2
- 20
- 1.2
60
A
Pulse Diode Forward Currenta
Body Diode Voltage
- 0.8
40
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
20
30
IF = - 5.9 A, di/dt = 100 A/µs, TJ = 25 °C
23
ns
tb
27
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69943
S-80434-Rev. A, 03-Mar-08
New Product
Si3471CDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
5
4
3
2
1
0
V
GS
= 5 thru 2 V
15
10
5
V
V
= 1.5 V
GS
T
C
= 125 °C
T
C
= 25 °C
= 1 V
GS
T
C
= - 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.3
V
0.6
0.9
1.2
1.5
V
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
DS
GS
Output Characteristics
Transfer Characteristics
0.08
0.06
0.04
0.02
0.00
2800
2400
2000
1600
1200
800
C
iss
V
GS
= 1.8 V
V
= 2.5 V
= 4.5 V
GS
C
oss
C
rss
V
GS
400
0
0
5
10
- Drain Current (A)
15
20
0
3
6
9
12
I
V
- Drain-to-Source Voltage (V)
D
DS
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
8
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
I
= 7.3 A
D
I
= 7.3 A
D
V
GS
= 4.5 V, 2.5 V
V
DS
= 6 V
6
4
2
0
V
GS
= 1.8 V
V
DS
= 9.6 V
0
5
10
15
20
25
30
35
- 50 - 25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 69943
S-80434-Rev. A, 03-Mar-08
www.vishay.com
3
New Product
Si3471CDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.08
0.06
0.04
0.02
0.00
100
I
= 7.3 A
D
T
J
= 150 °C
10
T
= 125 °C
T
J
= 25 °C
A
T
= 25 °C
A
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
0.7
0.6
0.5
0.4
0.3
0.2
20
16
I
= 250 µA
D
12
8
T
A
= 25 °C
4
0
-2
-1
10
- 50 - 25
0
25
50
75
100 125 150
10
1
10
100
600
T
J
- Temperature (°C)
Time (s)
Single Pulse Power
Threshold Voltage
100
Limited by r
*
DS(on)
10
1 ms
10 ms
1
100 ms
1 s, 10 s
DC
0.1
BVDSS
T
A
= 25 °C
Single Pulse
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which r is specified
DS(on)
GS
GS
Safe Operating Area
www.vishay.com
4
Document Number: 69943
S-80434-Rev. A, 03-Mar-08
New Product
Si3471CDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4
3
2
1
0
12
10
8
Package Limited
6
4
2
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power, Junction-to-Foot
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69943
S-80434-Rev. A, 03-Mar-08
www.vishay.com
5
New Product
Si3471CDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 90 °C/W
thJA
(t)
3. TJM - T = P
Z
A
DM thJA
Single Pulse
0.01
4. Surface Mounted
-4
-3
-2
10
-1
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
Single Pulse
- 4
0.01
- 3
- 2
- 1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?69943.
www.vishay.com
6
Document Number: 69943
S-80434-Rev. A, 03-Mar-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
SI3471DV-E3
TRANSISTOR 5100 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSOP-6, FET General Purpose Small Signal
VISHAY
SI3471DV-T1-GE3
Small Signal Field-Effect Transistor, 5.1A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6
VISHAY
SI3473CDV-T1-GE3
TRANSISTOR 8000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal
VISHAY
©2020 ICPDF网 联系我们和版权申明