SI3851DV_08 [VISHAY]
P-Channel 30-V (D-S) MOSFET With Schottky Diode; P通道30 - V（D -S）的MOSFET利用肖特基二极管
| 型号： | SI3851DV_08 |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 30-V (D-S) MOSFET With Schottky Diode |
| 文件： | 总7页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si3851DV
Vishay Siliconix
New Product
P-Channel 30-V (D-S) MOSFET With Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.200 @ V = –10 V
"1.8
"1.2
GS
–30
0.360 @ V = –4.5 V
GS
SCHOTTKY PRODUCT SUMMARY
Vf (v)
VKA (V)
IF (A)
Diode Forward Voltage
30
0.5 V @ 0.5 A
0.5
S
K
TSOP-6
Top View
A
S
K
1
2
3
6
5
G
3 mm
N/C
D
G
4
2.85 mm
D
A
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage (MOSFET and Schottky)
Reverse Voltage (Schottky)
V
–30
30
DS
KA
V
V
Gate-Source Voltage (MOSFET)
V
GS
"20
"20
T
= 25_C
= 70_C
"1.6
"1.2
"1.8
"1.5
A
a
Continuous Drain Current (T = 150_C) (MOSFET)
I
J
D
T
A
Pulsed Drain Current (MOSFET)
I
I
"7
DM
A
a
Continuous Source Current (MOSFET Diode Conduction)
Average Foward Current (Schottky)
I
–1.05
–0.75
S
I
0.5
7
F
Pulsed Foward Current (Schottky)
FM
T
= 25_C
= 70_C
= 25_C
= 70_C
1.15
0.73
1.0
0.83
0.53
0.76
0.48
A
a
Maximum Power Dissipation (MOSFET)
T
A
P
W
D
T
A
a
Maximum Power Dissipation (Schottky)
T
A
0.64
Operating Junction and Storage Temperature Range
T , T
J
–55 to 150
_C
stg
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 70978
S-61845—Rev. A, 11-Oct-99
www.vishay.com S FaxBack 408-970-5600
2-1
Si3851DV
New Product
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Device
Symbol
Typical
Maximum Unit
MOSFET
Schottky
MOSFET
Schottky
MOSFET
Schottky
93
103
130
140
75
110
125
t v 5 sec
Steady State
Steady State
Junction-to-Ambient
Junction-to-Foot
R
thJA
thJF
150
C/W
165
90
95
R
80
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
MOSFET SPECIFICATIONS (T= _2C5 UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = –250 mA
–1.0
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "20 V
GS
I
"100
nA
GSS
V
= –24 V, V = 0 V
–1
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= –24 V, V = 0 V, T = 75_C
–10
GS
J
a
On-State Drain Current
I
V
DS
w –5 V, V = –10 V
–5
A
D(on)
GS
V
= –10 V, I = –1.8 A
0.165
0.298
0.200
0.360
GS
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= –4.5 V, I = –1.2 A
D
a
Forward Transconductance
g
V
= –15 V, I = –1.8 A
2.4
S
V
fs
DS
D
a
Diode Forward Voltage
V
SD
I
S
= –1.05 A, V = 0 V
–0.83
–1.10
3.6
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
2.4
0.9
0.8
8
g
V
= –15 V, V = –5 V, I = –1.8 A
nC
ns
Q
gs
Q
gd
DS
GS
D
t
12
18
18
11
60
d(on)
t
12
12
7
r
V
= –15 V, R = 15 W
L
= –10 V, R = 6 W
GEN G
DD
I
^ –1 A, V
D
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
F
= –1.05 A, di/dt = 100 A/ms
30
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS (T= _2C5 UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
I
= 0.5 A
0.45
0.35
0.002
0.06
1.5
0.5
0.4
0.100
1
F
Forward Voltage Drop
V
V
F
I
= 0.5 A, T = 125_C
F
J
V = 30 V
r
V = 30 V, T = 75_C
Maximum Reverse Leakage Current
Junction Capacitance
I
rm
mA
pF
r
J
V = 30 V, T = 125_C
10
r
J
V = 10 V
r
C
24
T
Document Number: 70978
S-61845—Rev. A, 11-Oct-99
www.vishay.com S FaxBack 408-970-5600
2-2
Si3851DV
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
MOSFET
Output Characteristics
Transfer Characteristics
10
8
6
4
2
0
6 V
V
GS
= 10 thru 7 V
T
C
= –55_C
8
25_C
5 V
6
4
2
0
125_C
4 V
3 V
2 V
0
1
2
3
4
5
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.6
0.5
0.4
0.3
0.2
0.1
0
300
240
180
120
60
C
iss
V
= 4.5 V
GS
V
GS
= 10 V
C
oss
C
rss
0
0
1
2
3
4
5
6
7
0
6
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
= 15 V
V
GS
= 10 V
DS
I
D
= 1.8
A
I = 1.8 A
D
6
4
2
0
0
1
2
3
4
5
–50 –25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
Document Number: 70978
S-61845—Rev. A, 11-Oct-99
www.vishay.com S FaxBack 408-970-5600
2-3
Si3851DV
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
MOSFET
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
0.5
0.4
0.3
0.2
0.1
0
10
I
D
= 1.8 A
I
D
= 1 A
T = 150_C
J
1
T = 25_C
J
0.1
0
2
4
6
– Gate-to-Source Voltage (V)
GS
8
10
0.00
0.3
0.6
0.9
1.2
1.5
V
SD
– Source-to-Drain Voltage (V)
V
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.6
8
0.4
0.2
6
I
D
= 250 mA
4
2
0.0
–0.2
–0.4
0
–50 –25
0
25
50
75
100 125 150
0.01
0.1
1
10
30
Time (sec)
T – Temperature (_C)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
P
DM
0.1
0.1
t
1
0.05
t
2
t
1
1. Duty Cycle, D =
t
2
0.02
2. Per Unit Base = R
= 130_C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 70978
S-61845—Rev. A, 11-Oct-99
www.vishay.com S FaxBack 408-970-5600
2-4
Si3851DV
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
MOSFET
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
SCHOTTKY
Reverse Current vs. Junction Temperature
Forward Voltage Drop
20
10
5
1
1
T = 150_C
J
0.1
30 V
T = 25_C
J
0.01
10 V
0.001
0.0001
0.1
0
25
50
75
100
125
150
0
0.2
V
0.4
0.6
0.8
1.0
T
– Junction Temperature (_C)
– Forward Voltage Drop (V)
J
F
Capacitance
125
100
75
50
25
0
V
= 10 V
= 1.8 A
GS
I
D
0
6
12
18
24
30
V
KA
– Reverse Voltage (V
Document Number: 70978
S-61845—Rev. A, 11-Oct-99
www.vishay.com S FaxBack 408-970-5600
2-5
Si3851DV
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
SCHOTTKY
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
P
DM
0.1
0.1
t
1
0.05
t
2
t
t
1
1. Duty Cycle, D =
2
0.02
2. Per Unit Base = R
= 140_C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 70978
S-61845—Rev. A, 11-Oct-99
www.vishay.com S FaxBack 408-970-5600
2-6
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Vishay
Disclaimer
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or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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