SI4465ADY-T1-GE3 [VISHAY]
TRANSISTOR 13700 mA, 8 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal;
| 型号： | SI4465ADY-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR 13700 mA, 8 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：696K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4465ADY
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
ID (A)b
- 13.7
- 12.4
- 10
Qg (Typ.)
VDS (V)
RDS(on) (Ω)
Available
TrenchFET® Power MOSFET
1.8 V Rated
0.009 at VGS = - 4.5 V
0.011 at VGS = - 2.5 V
0.016 at VGS = - 1.8 V
•
•
55 nC
- 8
• 100 % Rg Tested
S
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View
D
Ordering Information: Si4465ADY-T1-E3 (Lead (Pb)-free)
Si4465ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
Limit
- 8
Unit
V
VGS
8
TA = 25 °C
- 13.7
- 11
TA = 70 °C
C = 25 °C
Continuous Drain Current (TJ = 150 °C)a, b
ID
T
- 20
TC = 70 °C
- 16
A
IDM
IS
- 40
Pulsed Drain Current
- 2.5
40
Continuous Source Current (Diode Conduction)a, b
ISM
TA = 25 °C
TA = 70 °C
TC = 25 °C
TC = 70 °C
3.0
1.95
6.5
Maximum Power Dissipationa, b
PD
W
4.2
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t ≤ 10 s
Steady State
Steady State
34
67
15
41
80
19
Maximum Junction-to-Ambient (MOSFET)a
Maximum Junction-to-Foot (Drain)
RthJA
°C/W
RthJF
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t ≤ 10 s.
Document Number: 73856
S09-0393-Rev. B, 09-Mar-09
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1
Si4465ADY
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS(th)
IGSS
VDS = VGS, ID = - 250 µA
Gate Threshold Voltage
Gate-Body Leakage
- 0.45
- 1.0
100
- 1
V
VDS = 0 V, VGS
=
8 V
nA
VDS = - 8 V, VGS = 0 V
VDS = - 8 V, VGS = 0 V, TJ = 55 °C
VDS ≥ − 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 14 A
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
- 5
ID(on)
- 20
0.0075
0.0092
0.013
58
0.009
0.011
0.016
Drain-Source On-State Resistancea
RDS(on)
VGS = - 2.5 V, ID = - 12 A
Ω
V
GS = 1.8 V, ID = 10 A
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = - 10 V, ID = - 14 A
IS = - 2.1 A, VGS = 0 V
S
V
VSD
- 0.57
- 1.2
85
Qg
Qgs
Qgd
Rg
Total Gate Charge
55
6
V
DS = - 4 V, VGS = - 4.5 V, ID = - 14 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
nC
10
2.5
33
3.8
50
Ω
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
VDD = - 4 V, RL = 4 Ω
ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 6 Ω
170
168
112
85
255
255
170
130
125
Turn-Off Delay Time
Fall Time
ns
trr
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
IF = - 2.1 A, dI/dt = 100 A/µs
Qrr
81
nC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73856
S09-0393-Rev. B, 09-Mar-09
Si4465ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
2.0
1.6
1.2
0.8
0.4
0.0
V
GS
= 5 V thru 2 V
1.5 V
32
24
16
8
T
= 125 °C
25 °C
C
1 V
- 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.3
0.6
0.9
1.2
1.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.020
0.017
0.014
0.011
0.008
0.005
8500
6800
5100
3400
1700
0
C
iss
V
GS
= 1.8 V
V
= 2.5 V
GS
C
oss
C
rss
V
= 4.5 V
GS
0
8
16
24
32
40
0.0
1.6
3.2
4.8
6.4
8.0
I
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
D
On-Resistance vs. Drain Current
Capacitance
1.5
1.3
1.1
0.9
0.7
8.0
6.4
4.8
3.2
1.6
0.0
V
D
= 1.8 V
GS
= 14 A
I
D
= 14 A
I
V
= 4 V
DS
V
= 4.5 V
GS
= 14 A
I
D
V
DS
= 6 V
- 50 - 25
0
25
50
75
100 125 150
0
21
42
63
84
105
Q
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
g
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 73856
S09-0393-Rev. B, 09-Mar-09
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3
Si4465ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.05
0.04
0.03
0.02
0.01
0.00
T
= 150 °C
J
10
T
= 25 °C
J
1
125 °C
25 °C
0
0.6
- Source-to-Drain Voltage (V)
0
0.3
0.9
1.2
1.5
0
1
2
3
4
5
V
SD
- Gate-to-Source Voltage (V)
V
GS
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
100
80
60
40
20
0
0.4
0.3
0.2
I
D
= 5 mA
I
D
= 250 µA
0.1
0.0
- 0.1
- 0.2
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
Time (s)
T
- Temperature (°C)
J
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
I
Limited
DM
*
Limited by R
DS(on)
10
10 ms
100 ms
1 s
1
10 s
DC
0.1
T
= 25 °C
A
BVDSS Limited
Single Pulse
0.01
10
1
0.1
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operatin Area
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Document Number: 73856
S09-0393-Rev. B, 09-Mar-09
Si4465ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
20
15
10
5
0
0
25
50
75
100
125
150
T
- Case Temperature (°C)
C
Current Derating
2.0
1.6
1.2
0.8
0.4
0.0
8.0
6.4
4.8
3.2
1.6
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
- Ambient Temperature (°C)
T
- Case Temperature (°C)
A
C
Power, Junction-to-Foot
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73856
S09-0393-Rev. B, 09-Mar-09
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5
Si4465ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
t
1
1. Duty Cycle, D =
0.02
2
2. Per Unit Base = R
= 80 °C
thJA
(t)
3. T - T = P
Z
JM DM thJA
A
4. Surface Mounted
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
-3
-2
-1
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73856.
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6
Document Number: 73856
S09-0393-Rev. B, 09-Mar-09
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (Gage Plane)
A
All Leads
0.101 mm
q
e
B
A
1
L
0.004"
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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22
Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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