SI5504DC-T1-E3 [VISHAY]
TRANSISTOR 2900 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, 1206-8, CHIPFET-8, FET General Purpose Small Signal;
| 型号： | SI5504DC-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR 2900 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, 1206-8, CHIPFET-8, FET General Purpose Small Signal 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si5504DC
Vishay Siliconix
Complementary 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)
3.9
Definition
0.085 at VGS = 10 V
0.143 at VGS = 4.5 V
0.165 at VGS = - 10 V
0.290 at VGS = - 4.5 V
•
•
TrenchFET® Power MOSFETs
N-Channel
P-Channel
30
3.0
Compliant to RoHS Directive 2002/95/EC
2.8
- 30
2.1
1206-8 ChipFET®
D
1
S
2
1
S
1
D
1
G
1
G
2
D
1
S
2
Marking Code
G
1
D
2
G
2
EA XX
Lot Traceability
and Date Code
D
2
Part # Code
Bottom View
S
1
D
2
Ordering Information: Si5504DC-T1-E3 (Lead (Pb)-free)
N-Channel MOSFET
P-Channel MOSFET
Si5504DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
N-Channel
P-Channel
Steady State
- 30
Parameter
Symbol
VDS
Unit
5 s
Steady State
5 s
Drain-Source Voltage
Gate-Source Voltage
30
V
VGS
20
10
TA = 25 °C
TA = 85 °C
3.9
2.8
2.9
2.1
2.8
2.1
1.5
Continuous Drain Current (TJ = 150 °C)a
ID
2.0
A
IDM
IS
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
1.8
0.9
1.1
0.6
- 1.8
2.1
- 0.9
1.1
TA = 25 °C
TA = 85 °C
2.1
1.1
Maximum Power Dissipationa
PD
W
1.1
0.6
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
Typical
50
Maximum
Unit
t ≤ 5 s
60
110
40
Maximum Junction-to-Ambienta
Steady State
Steady State
90
°C/W
RthJF
Maximum Junction-to-Foot (Drain)
30
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See reliability manual for profile. The ChipFET/PowerPAK is a leadless package. The end of the lead terminal is exposed copper (not plated)
as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71056
S10-0547-Rev. C, 08-Mar-10
www.vishay.com
1
Si5504DC
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS = VGS, ID = 250 µA
N-Ch
1.0
VGS(th)
Gate Threshold Voltage
Gate-Body Leakage
V
V
DS = VGS, ID = - 250 µA
P-Ch
N-Ch
P-Ch
N-Ch
- 1.0
100
100
1
IGSS
VDS = 0 V, VGS 20 V
=
nA
VDS = 24 V, VGS = 0 V
VDS = - 24 V, VGS = 0 V
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
- 1
5
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
DS = 24 V, VGS = 0 V, TJ = 85 °C
V
DS = - 24 V, VGS = 0 V, TJ = 85 °C
VDS ≥ 5 V, VGS = 10 V
- 5
10
ID(on)
VDS ≤ - 5 V, VGS = - 10 V
VGS = 10 V, ID = 2.9 A
- 10
0.072
0.137
0.120
0.240
6
0.085
0.165
0.143
0.290
V
GS = - 10 V, ID = - 2.1 A
GS = 4.5 V, ID = 2.2 A
Drain-Source On-State Resistancea
RDS(on)
Ω
V
V
GS = - 4.5 V, ID = - 1.6 A
VDS = 15 V, ID = 2.9 A
Forward Transconductancea
Diode Forward Voltagea
gfs
S
V
V
DS = - 15 V, ID = - 2.1 A
IS = 0.9 A, VGS = 0 V
3
0.8
1.2
VSD
IS = - 0.9 A, VGS = 0 V
- 0.8
- 1.2
Dynamicb
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
5
5.5
0.8
1.2
1.0
0.9
7
7.5
6.6
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
N-Channel
DS = 15 V, VGS = 10 V, ID = 2.9 A
V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
nC
P-Channel
DS = - 15 V, VGS = - 10 V, ID = - 2.1 A
V
11
12
18
18
18
21
11
12
80
N-Channel
DD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
8
V
12
11
12
14
7
P-Channel
DD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
ns
V
8
IF = 0.9 A, dI/dt = 100 A/µs
IF = - 0.9 A, dI/dt = 100 A/µs
40
trr
Source-Drain Reverse Recovery Time
P-Ch
40
80
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71056
S10-0547-Rev. C, 08-Mar-10
Si5504DC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
10
V
GS
= 10 V thru 5 V
8
8
6
6
4
2
0
4 V
4
T
= - 125 °C
C
2
3 V
25 °C
- 55 °C
0
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
400
300
200
100
0
0.20
0.15
0.10
0.05
0.00
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
6
12
18
24
30
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
V
I
= 10 V
V
I
= 15 V
GS
DS
= 2.9 A
= 2.9 A
D
D
6
4
2
0
- 50 - 25
0
25
50
75
100 125 150
0
1
2
3
4
5
Q
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 71056
S10-0547-Rev. C, 08-Mar-10
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3
Si5504DC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.20
0.15
0.10
0.05
0.00
10
T
= 150 °C
J
I
D
= 2.9 A
T
= 25 °C
1.0
J
1
0
2
4
6
8
10
100 600
600
0
0.2
0.4
0.6
0.8
1.2
V
- Gate-to-Source Voltage (V)
V
- Source-to-Drain Voltage (V)
GS
SD
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.4
0.2
50
40
30
I
= 250 µA
D
0.0
- 0.2
- 0.4
- 0.6
- 0.8
20
10
0
- 50 - 25
0
25
50
75
100 125 150
-4
-3
-2
-1
10
10
10
10
1
10
T
- Temperature (°C)
J
Time (s)
Single Pulse Power
Threshold Voltage
2
1
Duty Cycle = 0.5
0.2
Notes:
P
DM
0.1
0.1
t
0.05
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 90 °C/W
thJA
(t)
3. T
- T = P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
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Document Number: 71056
S10-0547-Rev. C, 08-Mar-10
Si5504DC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
10
6 V
5 V
V
GS
= 10 V thru 7 V
T
= - 55 °C
25 °C
C
8
8
6
6
125 °C
4
4 V
4
2
2
3 V
2.5
0
0.0
0
0.5
1.0
1.5
2.0
3.0
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.4
0.3
0.2
0.1
0.0
400
320
240
160
80
V
= 4.5 V
GS
C
iss
V
= 10 V
GS
C
oss
C
rss
0
0
2
4
6
8
10
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
Document Number: 71056
S10-0547-Rev. C, 08-Mar-10
www.vishay.com
5
Si5504DC
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.6
1.4
1.2
1.0
0.8
0.6
10
8
V
I
= 10 V
V
I
= 15 V
GS
DS
= 2.1 A
= 2.1 A
D
D
6
4
2
0
- 50 - 25
0
25
50
75
100 125 150
0
1
2
3
4
5
6
T - Junction Temperature (°C)
J
Q
- Total Gate Charge (nC)
g
On-Resistance vs. Junction Temperature
Gate Charge
0.4
0.3
0.2
0.1
0.0
10
T
= 150 °C
J
I
= 2.1 A
D
T
= 25 °C
J
0.1
0
2
4
6
8
10
0
0.3
V
0.6
0.9
1.2
1.5
V
- Gate-to-Source Voltage (V)
GS
- Source-to-Drain Voltage (V)
SD
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.6
0.4
50
40
30
20
10
0.2
I
= 250 µA
D
0.0
- 0.2
- 0.4
0
- 50 - 25
0
25
50
75
100 125 150
-4
-3
-2
-1
10
10
10
10
Time (s)
Single Pulse Power
1
10
100 600
T
- Temperature (°C)
J
Threshold Voltage
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Document Number: 71056
S10-0547-Rev. C, 08-Mar-10
Si5504DC
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
Notes:
0.2
0.1
P
DM
0.1
t
1
0.05
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 90 °C/W
thJA
(t)
3. T
- T = P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71056.
Document Number: 71056
S10-0547-Rev. C, 08-Mar-10
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1
相关型号：
SI5511DC-T1-GE3
Small Signal Field-Effect Transistor, 3.9A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, 1206-8, CHIPFET-8
VISHAY
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