SI6443DQ [VISHAY]
P-Channel 30-V (D-S) MOSFET; P通道30 -V （D -S ）的MOSFET
| 型号： | SI6443DQ |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 30-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si6443DQ
Vishay Siliconix
New Product
P-Channel 30-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
D Battery Switch
D Load Switch
0.012 @ V
= -10 V
= -4.5 V
-8.8
GS
GS
-30
0.019 @ V
- 7.0
S*
TSSOP-8
G
D
S
S
G
D
S
S
D
1
2
3
4
8
7
6
5
D
* Source Pins 2, 3, 6 and 7
must be tied common.
Si6443DQ
Top View
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
-30
DS
GS
V
V
"20
T
= 25_C
= 70_C
- 8.8
-7.2
-7.3
-5.9
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)
I
-30
DM
a
Continuous Source Current (Diode Conduction)
I
-1.35
1.50
1.0
-0.95
1.05
0.67
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
60
100
35
83
120
45
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72083
S-22385—Rev. A, 30-Dec-02
www.vishay.com
1
Si6443DQ
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = -250 mA
-1
-3
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "20 V
GS
I
"100
nA
GSS
V
= -24 V, V = 0 V
-1
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= -24 V, V = 0 V, T = 55_C
V
-10
GS
J
a
On-State Drain Current
I
-5 V, V = -10 V
-20
A
D(on)
DS
GS
V
= -10 V, I = -8.8 A
0.0095
0.0145
0.012
0.019
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
GS
= -4.5 V, I = -7.2 A
D
a
Forward Transconductance
g
V
= -15 V, I = -8.8 A
30
S
V
fs
DS
D
a
Diode Forward Voltage
V
SD
I
= -1.5 A, V = 0 V
-0.71
-1.1
60
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
38
9.3
17.7
25
g
Q
Q
V
= -15 V, V
= -5 V, I = -8.8 A
nC
ns
gs
gd
DS
GS
D
t
40
35
d(on)
t
21
r
V
= -15 V, R = 15 W
L
= -10 V, R = 6 W
GEN G
DD
I
^ -1 A, V
D
Turn-Off Delay Time
Fall Time
t
115
68
180
110
100
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
= -1.5 A, di/dt = 100 A/ms
65
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
30
30
24
18
12
6
V
GS
= 10 thru 4 V
24
18
12
6
3 V
T
= 125_C
C
25_C
-55 _C
0
0
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72083
www.vishay.com
S-22385—Rev. A, 30-Dec-02
2
Si6443DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
5000
4000
3000
2000
1000
0
0.025
0.020
C
iss
V
GS
= 4.5 V
= 10 V
0.015
0.010
0.005
0.000
V
GS
C
oss
C
rss
0
6
12
18
24
30
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15 V
= 8.8 A
V
= 10 V
DS
GS
I
D
I = 8.8 A
D
6
4
2
0
0
14
28
42
56
70
-50
-25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T - Junction Temperature (_C)
J
g
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.080
30
10
T
= 150_C
J
0.064
0.048
0.032
0.016
0.000
I
D
= 8.8 A
1
T
= 25_C
J
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72083
www.vishay.com
S-22385—Rev. A, 30-Dec-02
3
Si6443DQ
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
60
50
0.8
0.6
0.4
40
30
I
D
= 250 mA
0.2
0.0
20
10
0
-0.2
-0.4
- 2
- 1
-50
-25
0
25
50
75
100 125 150
10
10
1
10
100
T
- Temperature (_C)
Time (sec)
J
Safe Operating Area, Junction-to-Case
100
Limited
by r
DS(on)
10
1 ms
10 ms
1
100 ms
0.1
1 s
10 s
dc
T
= 25_C
C
Single Pulse
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 100_C/W
thJA
(t)
3. T
- T = P Z
A DM thJA
JM
Single Pulse
4. Surface Mounted
0.01
- 4
- 3
- 2
- 1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72083
www.vishay.com
S-22385—Rev. A, 30-Dec-02
4
Si6443DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
- 4
- 3
- 2
- 1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72083
www.vishay.com
S-22385—Rev. A, 30-Dec-02
5
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