SI7470DP-T1-E3 [VISHAY]
Power Field-Effect Transistor, 40A I(D), 8V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8;
| 型号： | SI7470DP-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, 40A I(D), 8V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si7470DP
Vishay Siliconix
New Product
N-Channel 1.5-V (G-S) MOSFET
PRODUCT SUMMARY
FEATURES
D TrenchFETr Power MOSFET
VDS (V)
rDS(on) (W)
ID (A)a
40
Qg (Typ)
D 1.5–V Rated
0.0021 at V = 4.5 V
GS
RoHS
D Low Thermal Resistance PowerPAK Package
COMPLIANT
0.0024 at V = 2.5 V
GS
40
with 1.07–mm Profile
8
61 nC
0.0028 at V = 1.8 V
40
GS
APPLICATIONS
D Low Output Voltage Load Switch
– POL
0.0034 at V = 1.5 V
40
GS
PowerPAK SO-8
– LDO
– Output Switch
S
6.15 mm
5.15 mm
D
1
S
2
S
3
G
4
D
8
D
7
G
D
6
D
5
Bottom View
Ordering Information: Si7470DP–T1–E3 (Lead (Pb)-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25 _C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
8
DS
GS
V
V
"5
40
32
b, c
31
b, c
25
T
T
= 25 _C
= 70 _C
= 25 _C
= 70 _C
C
C
Continuous Drain Current (T = 150 _C)
I
J
D
T
A
T
A
A
Pulsed Drain Current
I
70
40
b, c
4.9
DM
T
C
= 25 _C
= 25 _C
Continuous Source-Drain Diode Current
I
S
T
A
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
I
AS
20
20
83
53
b, c
5.4
b, c
3.4
L = 0.1 mH
E
mJ
W
AS
T
T
= 25 _C
= 70 _C
= 25 _C
= 70 _C
C
C
Maximum Power Dissipation
P
D
T
A
T
A
Operating Junction and Storage Temperature Range
T , T
J
–55 to 150
260
stg
_C
d, e
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
b, f
Maximum Junction-to-Ambient
R
thJA
18
23
t p 10 sec
_C/W
Maximum Junction-to-Case (Drain)
Notes:
Steady State
R
thJC
1.0
1.5
a. Based on T = 25 _C.
C
b. Surface mounted on 1” x 1” FR4 board.
c. t = 10 sec.
d. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f.
Maximum under steady state conditions is 65 _C/W.
Document Number: 73556
S–52608—Rev. A, 02-Jan-06
www.vishay.com
1
Si7470DP
Vishay Siliconix
New Product
SPECIFICATIONS (T = 25 _C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I = 250 mA
8
V
D
V
Temperature Coefficient
DV /T
J
8.5
DS
DS
I
D
= 250 mA
mV/_C
V
GS(th)
Temperature Coefficient
DV
GS(th)
/T
J
–3.0
V
V
= V , I = 250 mA
GS D
Gate-Source Threshold Voltage
Gate-Source Leakage
V
0.35
0.75
"100
1
V
DS
GS(th)
I
= 0 V, V = "5 V
nA
GSS
DS
GS
V
= 8 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 8 V, V = 0 V, T = 55 _C
10
GS
J
a
On-State Drain Current
I
30
A
V
DS
w 5 V, V = 4.5 V
GS
D(on)
V
= 4.5 V, I = 20 A
0.0017
0.0019
0.0021
0.0024
GS
D
V
V
V
= 2.5 V, I = 18 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
= 1.8 V, I = 16 A
0.0022
0.0026
110
0.0028
0.0034
GS
GS
D
= 1.5 V, I = 14 A
D
a
Forward Transconductance
g
fs
V
= 5 V, I = 20 A
S
DS
D
Dynamicb
Input Capacitance
C
C
11390
2980
1910
110
61
iss
Output Capacitance
V
= 4 V, V = 0 V, f = 1 MHz
pF
oss
DS GS
Reverse Transfer Capacitance
C
rss
V
= 4 V, V = 4.5 V, I = 20 A
165
90
DS
DS
GS
D
Total Gate Charge
Q
g
nC
W
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
Q
V
= 4 V, V = 2.5 V, I = 20 A
10.5
16
gs
GS
D
gd
R
f = 1 MHz
1.0
1.5
50
g
t
32
d(on)
t
340
98
510
150
30
r
V
DD
= 4 V, R = 0.4 W
L
ns
I
^ 10 A, V
= 4.5 V, R = 1 W
GEN g
D
Turn-Off Delay Time
Fall Time
t
d(off)
t
18
f
Drain-Source Body Diode Characteristics
T
C
= 25 _C
Continuous Source-Drain Diode Current
I
40
70
S
A
a
Pulse Diode Forward Current
I
SM
I
= 5 A
Body Diode Voltage
V
0.56
87
1.1
130
130
V
S
SD
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
t
ns
nC
rr
Q
87
rr
I
F
= 5 A, di/dt = 100 A/ms, T = 25 _C
J
t
t
26
a
ns
61
b
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73556
S–52608—Rev. A, 02-Jan-06
www.vishay.com
2
Si7470DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
70
2.0
1.6
1.2
0.8
0.4
0.0
60
50
40
30
20
10
0
V
= 5 V thru 1.5 V
GS
25 _C
T
C
= 125 _C
1.0 V
–55 _C
0.0
0.4
0.8
1.2
1.6
2.0
0.0
0.3
0.6
0.9
1.2
1.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
15000
12000
9000
6000
3000
0
0.0035
C
iss
0.0031
0.0027
0.0023
0.0019
0.0015
V
GS
= 1.5 V
V
= 1.8 V
= 2.5 V
GS
C
V
oss
GS
C
rss
V
= 4.5 V
GS
0
10
20
D
30
40
50
60
0.0
1.6
3.2
4.8
6.4
8.0
I
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
4.5
3.6
2.7
1.8
0.9
0.0
1.5
1.3
1.1
0.9
0.7
V
GS
= 2.5 V
I
D
= 20 V
I = 20 A
D
V
DS
= 4 V
V
GS
= 4.5 V
6 V
0
23
Q
46
69
92
115
–50 –25
0
25
50
75
100 125 150
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
g
Document Number: 73556
S–52608—Rev. A, 02-Jan-06
www.vishay.com
3
Si7470DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.010
0.008
0.006
0.004
0.002
0.000
100
T
= 150 _C
J
10
1
T
= 25 _C
J
0.1
125 _C
0.01
25 _C
0.001
0
1
2
3
4
5
0.00
0.2
0.4
0.6
0.8
1.0
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.3
0.1
200
160
120
80
–0.1
–0.3
–0.5
I
= 5 mA
D
40
0
I
D
= 250 mA
–50 –25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
– Temperature (_C)
Time (sec)
Safe Operating Area, Junction-to-Ambient
100
1 ms
*Limited by r
10
DS(on)
10 ms
100 ms
1 s
1
10 s
dc
0.1
T
= 25 _C
A
Single Pulse
0.01
0.01
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
*V u minimum V at which r is specified
GS
GS
DS(on)
Document Number: 73556
S–52608—Rev. A, 02-Jan-06
www.vishay.com
4
Si7470DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Current De-Rating*
170
136
102
68
34
Limited by Package
0
0
25
50
75
100
125
150
T
C
– Case Temperature (_C)
Power, Junction-to-Case
Power, Junction-to-Ambient
100
80
60
40
20
0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
– Case Temperature (_C)
T
C
– Case Temperature (_C)
*The power dissipation P is based on T
cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
= 175 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for
D
J(max)
Document Number: 73556
S–52608—Rev. A, 02-Jan-06
www.vishay.com
5
Si7470DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
P
DM
0.05
t
1
t
2
t
t
1
1. Duty Cycle, D =
0.02
2
2. Per Unit Base = R
= 65 _C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?73556.
Document Number: 73556
S–52608—Rev. A, 02-Jan-06
www.vishay.com
6
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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SI7483DP-E3
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