SI7478DP-T1-E3 [VISHAY]
N-Channel 60-V (D-S) MOSFET; N通道60 -V （D -S ）的MOSFET
| 型号： | SI7478DP-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 60-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：232K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si7478DP
Vishay Siliconix
New Product
N-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
TrenchFET® Power MOSFET
VDS (V)
rDS(on) (Ω)
ID (A)
20
•
New Low Thermal Resistance PowerPAK®
0.0075 @ VGS = 10 V
0.0088 @ VGS = 4.5 V
Package with Low 1.07-mm Profile
RoHS
60
18.5
COMPLIANT
•
100 % Rg Tested
APPLICATIONS
•
Automotive Such As:
- High-Side Switch
- Motor Drives
PowerPAK SO-8
- 12-V Boardnet
S
6.15 mm
5.15 mm
1
S
2
S
3
D
G
4
D
8
D
7
D
6
G
D
5
Bottom View
S
Ordering Information:
Si7478DP-T1—E3 (Lead (Pb)-Free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
60
20
V
TA = 25°C
TA = 70°C
20
16
15
12
Continuous Drain Current (TJ = 150°C)a
ID
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Avalanche Current
IDM
IS
IAS
EAS
60
A
4.5
1.6
35
61
Avalanche Energy
mJ
W
TA = 25°C
5.4
3.4
1.9
1.2
Maximum Power Dissipationa
PD
T
A = 70°C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
TJ, Tstg
–55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
Typical
18
52
Maximum
Unit
t ≤ 10 sec
Steady State
Steady State
23
65
Maximum Junction-to-Ambienta
°C/W
Maximum Junction-to-Case (Drain)
RthJC
1.0
1.3
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72913
S-51566-Rev. B, 07-Nov-05
www.vishay.com
1
Si7478DP
Vishay Siliconix
New Product
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, ID = 250 µA
1.0
3.0
100
1
V
VDS = 0 V, VGS
=
20 V
nA
VDS = 60 V, VGS = 0 V
DS = 60 V, VGS = 0 V, TJ = 55°C
VDS ≥ 5 V, VGS = 10 V
IDSS
ID(on)
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
5
40
VGS = 10 V, ID = 20 A
0.006
0.007
63
0.0075
0.0088
Drain-Source On-State Resistancea
rDS(on)
Ω
V
GS = 4.5 V, ID = 18.5 A
Forward Transconductancea
Diode Forward Voltagea
gfs
VDS = 15 V, ID = 20 A
IS = 4.5 A, VGS = 0 V
S
V
VSD
0.76
1.2
Dynamicb
Total Gate Charge
Qg
Qgs
Qgd
Rg
105
22
160
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
VDS = 30 V, VGS = 10 V, ID = 20 A
nC
19
0.5
1.0
25
1.5
40
Ω
td(on)
tr
td(off)
tf
20
30
V
DD = 30 V, RL = 30 Ω
ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω
Turn-Off Delay Time
Fall Time
115
45
175
70
ns
Source-Drain Reverse Recovery Time
Notes
trr
IF = 4.5 A, di/dt = 100 A/µs
41
70
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless noted
60
50
40
30
20
10
0
60
50
40
30
20
10
0
V
= 10 thru 4 V
GS
T
C
= 125˚C
25˚C
3 V
2.5
- 55˚C
3.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
4.0
0.0
0.5
1.0
1.5
2.0
3.0
V
-
Gate-to-Source Voltage (V)
V
-
Drain-to-Source Voltage (V)
GS
DS
Output Characteristics
Transfer Characteristics
www.vishay.com
2
Document Number: 72913
S-51566-Rev. B, 07-Nov-05
Si7478DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless noted
0.012
0.010
0.008
0.006
0.004
0.002
0.000
10000
8000
6000
4000
2000
0
V
= 4.5 V
= 10 V
GS
C
iss
V
GS
C
oss
C
rss
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I
D
- Drain Current (A)
V
- Drain-to-Source Voltage (V)
DS
On-Resistance vs. Drain Current
Capacitance
10
8
1.8
V
I
= 30 V
V
I
= 10 V
DS
D
GS
D
1.6
1.4
1.2
1.0
0.8
0.6
= 20
A
= 20
A
6
4
2
0
0
20
40
60
80
100
120
-50 -25
0
25
50
75
100 125 150
Q - Total Gate Charge (nC)
g
T - Junction Temperature (˚C)
J
Gate Charge
On-Resistance vs. Junction Temperature
0.020
0.016
0.012
0.008
0.004
0.000
60
10
I
D
= 20 A
T = 150˚C
J
T = 25˚C
J
1
0.0
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
V
GS - Gate-to-Source Voltage (V)
V
-
Source-to-Drain Voltage (V)
SD
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72913
S-51566-Rev. B, 07-Nov-05
www.vishay.com
3
Si7478DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless noted
0.6
0.4
100
80
I
D
= 250 µA
0.2
- 0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
60
40
20
0
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T - Temperature (˚C)
J
Threshold Voltage
Time (sec)
Single Pulse Power, Junction-to-Ambient
I
DM
Limited
100
r
Limited
10
DS(on)
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
I
D(on)
Limited
1
P(t) = 1
T
= 25˚C
P(t) = 10
dc
A
0.1
Single Pulse
BV
DSS
Limited
10
0.01
0.1
1
100
V
-
Drain-to-Source Voltage (V)
DS
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 52˚C/W
thJA
(t)
Z
3. T
-
T
= P
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
-4
10
-3
10
-2
10
-1
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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4
Document Number: 72913
S-51566-Rev. B, 07-Nov-05
Si7478DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
10
-3
10
-2
10
-1
10
1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72913.
Document Number: 72913
S-51566-Rev. B, 07-Nov-05
www.vishay.com
5
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