SI7476DP [VISHAY]
N-Channel 40-V (D-S) Fast Switching MOSFET; N通道40 -V （D -S ）快速开关MOSFET
| 型号： | SI7476DP |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 40-V (D-S) Fast Switching MOSFET |
| 文件： | 总5页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si7476DP
Vishay Siliconix
New Product
N-Channel 40-V (D-S) Fast Switching MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
VDS (V)
rDS(on) (W)
ID (A)
D New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
0.0053 @ V = 10 V
GS
25
23
40
0.0066 @ V = 4.5 V
GS
APPLICATIONS
D Automotive*
− 12-V Boardnet
− High-Side Switches
− Motor Drives
PowerPAK SO-8
*Contact factory for automotive qualification
S
6.15 mm
5.15 mm
D
1
S
2
S
3
G
4
D
8
D
7
G
D
6
D
5
S
Bottom View
Ordering Information: Si7476DP-T1—E3
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
40
V
"20
T
= 25_C
= 70_C
25
20
15
12
A
a
Continuous Drain Current (T = 150__C)
I
D
J
T
A
Pulsed Drain Current
I
80
A
DM
a
Continuous Source Current (Diode Conduction)
Avalanche Current
I
4.5
1.6
S
I
AS
60
Avalanche Energy
E
180
mJ
AS
T
= 25_C
= 70_C
5.4
3.4
1.9
1.2
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
J
−55 to 150
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
18
52
23
65
a
Maximum Junction-to-Ambient
R
R
thJA
_C/W
Maximum Junction-to-Case (Drain)
1.0
1.3
thJC
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72569
S-40577—Rev. B, 29-Mar-04
www.vishay.com
1
Si7476DP
New Product
Vishay Siliconix
MOSFET SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
1.0
3
"100
1
V
GS(th)
DS
GS D
V
= 0 V, V = "20 V
GS
I
nA
DS
GSS
V
= 40 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 40 V, V = 0 V, T = 55_C
5
DS
GS
J
a
On-State Drain Current
I
40
A
V
w 5 V, V = 10 V
GS
D(on)
DS
0.0042
0.0053
0.0066
V
= 10 V, I = 25 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 23 A
0.0053
85
GS
DS
D
a
Forward Transconductance
g
fs
V
= 15 V, I = 25 A
S
V
D
a
Diode Forward Voltage
V
I
S
= 4.5 A, V = 0 V
0.76
1.2
SD
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
118
25
177
g
Q
gs
Q
gd
V
= 20 V, V = 10 V, I = 25 A
nC
DS
GS
D
21.2
1.0
30
R
g
W
t
45
35
d(on)
t
r
22
V
= 20 V, R = 20 W
L
DD
I
D
^ 1 A, V
= 10 V, R = 6 W
GEN g
Turn-Off Delay Time
Fall Time
t
130
55
195
85
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
F
= 4.5 A, di/dt = 100 A/ms
45
70
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
60
60
50
40
30
20
10
0
V
= 10 thru 4 V
GS
50
40
30
20
10
0
T
C
= 125_C
25_C
3 V
2.5
−55_C
0.0
0.5
1.0
1.5
2.0
3.0
0.0
0.5
1.0
V − Gate-to-Source Voltage (V)
GS
1.5
2.0
2.5
3.0
3.5
4.0
V
− Drain-to-Source Voltage (V)
DS
Document Number: 72569
S-40577—Rev. B, 29-Mar-04
www.vishay.com
2
Si7476DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.008
10000
8000
6000
4000
2000
0
0.007
V
= 4.5 V
= 10 V
0.006
0.005
0.004
0.003
0.002
0.001
0.000
GS
C
iss
V
GS
C
oss
C
rss
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
40
I
D
− Drain Current (A)
V
− Drain-to-Source Voltage (V)
DS
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 20 V
V
= 10 V
GS
DS
I
= 25
A
I = 25 A
D
6
4
2
0
0
20
40
60
80
100
120
−50 −25
0
25
50
75
100 125 150
Q
g
− Total Gate Charge (nC)
T
J
− Junction Temperature (_C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.020
0.016
0.012
0.008
0.004
0.000
60
I
D
= 25 A
T = 150_C
J
10
T = 25_C
J
1
0.0
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
V
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
SD
Document Number: 72569
S-40577—Rev. B, 29-Mar-04
www.vishay.com
3
Si7476DP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Juncion-to-Ambient
0.4
100
80
I
D
= 250 mA
0.2
−0.0
−0.2
−0.4
−0.6
−0.8
−1.0
60
40
20
0
−50 −25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
J
− Temperature (_C)
Time (sec)
I
Safe Operating Area
DM
Limited
100
r
Limited
10
DS(on)
P(t) = 0.001
P(t) = 0.01
I
D(on)
Limited
1
P(t) = 0.1
P(t) = 1
T
A
= 25_C
P(t) = 10
dc
0.1
Single Pulse
BV
DSS
Limited
10
0.01
0.1
1
100
V
− Drain-to-Source Voltage (V)
DS
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 52_C/W
thJA
(t)
3. T − T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72569
S-40577—Rev. B, 29-Mar-04
www.vishay.com
4
Si7476DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
Square Wave Pulse Duration (sec)
10
1
Document Number: 72569
S-40577—Rev. B, 29-Mar-04
www.vishay.com
5
相关型号：
SI7483DP-E3
TRANSISTOR 14 A, 30 V, 0.005 ohm, P-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power
VISHAY
©2020 ICPDF网 联系我们和版权申明