SI7911DN 概述
Dual P-Channel 20-V (D-S) MOSFET 双P通道20 - V(D -S)的MOSFET
SI7911DN 数据手册
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Vishay Siliconix
New Product
Dual P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFETS: 1.8-V Rated
D New Low Thermal Resistance PowerPAKr
VDS (V)
rDS(on) (W)
ID (A)
Package
0.051 @ V = -4.5 V
-5.7
-5.0
-4.2
GS
APPLICATIONS
-20
0.067 @ V = -2.5
GS
V
V
D Portable
0.094 @ V = -1.8
GS
-
-
-
PA Switch
Battery Switch
Load Switch
PowerPAK 1212-8
S
1
S
2
S1
3.30 mm
3.30 mm
G
G
2
1
1
G1
2
S2
3
G2
4
D1
8
D1
D
1
D
2
7
D2
Ordering Information: Si7911DN-T1
6
D2
P-Channel MOSFET
P-Channel MOSFET
5
Bottom View
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
-20
DS
V
"8
GS
T
= 25_C
= 85_C
-4.2
-3.0
-5.7
-4.1
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
-20
DM
a
continuous Source Current (Diode Conduction)
I
-2.1
2.5
-1.1
1.3
S
T
= 25_C
= 85_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.3
0.85
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
40
75
50
94
7
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
_C/W
Maximum Junction-to-Case
5.6
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72340
S-31612—Rev. A, 11-Aug-03
www.vishay.com
1
Si7911DN
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = -250 mA
-0.40
-1.0
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "8 V
"100
nA
GSS
DS
GS
V
= -16 V, V = 0 V
-1
-5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= -16 V, V = 0 V, T = 85_C
GS
J
a
On-State Drain Current
I
V
DS
v -5 V, V = -4.5 V
-20
A
D(on)
GS
V
= -4.5 V, I = -5.7 A
D
0.040
0.054
0.075
0.051
0.067
0.094
GS
a
V
= -2.5 V, I = -5.0 A
D
Drain-Source On-State Resistance
r
W
GS
GS
DS(on)
V
= -1.8 V, I = -1.1 A
D
a
Forward Transconductance
g
14
S
V
V
= -6 V, I = -5.7 A
D
fs
DS
a
Diode Forward Voltage
V
SD
I
S
= -2.3 A, V = 0 V
-0.8
-1.2
15
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
9.5
1.6
2.5
7.2
20
g
Q
Q
V
DS
= -6 V, V = -4.5 V, I = -5.7 A
nC
gs
gd
GS
D
R
W
g
t
30
55
d(on)
t
35
r
V
DD
= -10 V, R = 10 W
L
I
D
^ -1 A, V = -4.5 V, R = 6 W
GEN G
Turn-Off Delay Time
Fall Time
t
70
105
60
ns
d(off)
t
f
40
Source-Drain Reverse Recovery Time
t
rr
I
F
= -2.1 A, di/dt = 100 A/ms
25
50
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
20
20
16
12
8
T
= -55_C
C
V
GS
= 5 thru 2.5 V
25_C
16
12
8
2 V
125_C
1.5 V
1 V
4
4
0
0
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72340
S-31612—Rev. A, 11-Aug-03
www.vishay.com
2
Si7911DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
1500
1200
900
600
300
0
0.20
0.16
V
GS
= 1.8 V
C
iss
0.12
0.08
0.04
0.00
V
GS
= 2.5 V
V
GS
= 4.5 V
C
oss
C
rss
0
4
8
12
16
20
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
= 10 V
= 5.7 A
V
= 4.5 V
DS
GS
I
D
I = 5.7 A
D
0
2
4
6
8
10
12
-50
-25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.20
0.16
0.12
0.08
0.04
0.00
20
10
I
D
= 5.7 A
I
D
= 1.1 A
T
= 150_C
J
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72340
S-31612—Rev. A, 11-Aug-03
www.vishay.com
3
Si7911DN
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
30
25
0.3
0.2
20
15
10
I
D
= 250 mA
0.1
0.0
5
0
-0.1
-0.2
-50
-25
0
25
50
75
100 125 150
0.001
0.01
0.1
10
100
600
1
T
- Temperature (_C)
Time (sec)
J
Safe Operating Area, Junction-To-Ambient
100
I
Limited
DM
r
Limited
DS(on)
10
1
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
I
D(on)
Limited
P(t) = 0.1
P(t) = 1
T
= 25_C
A
P(t) = 10
dc
0.1
Single Pulse
BV
DSS
Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 75_C/W
thJA
(t)
3. T
- T = P Z
A DM thJA
JM
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72340
S-31612—Rev. A, 11-Aug-03
www.vishay.com
4
Si7911DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
Square Wave Pulse Duration (sec)
Document Number: 72340
S-31612—Rev. A, 11-Aug-03
www.vishay.com
5
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