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SI9122DQ-E3 [VISHAY]

Switching Regulator/Controller, Voltage-mode, 600kHz Switching Freq-Max, PDSO20;
SI9122DQ-E3
型号： SI9122DQ-E3
厂家： VISHAY    VISHAY
描述：

Switching Regulator/Controller, Voltage-mode, 600kHz Switching Freq-Max, PDSO20

光电二极管
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Si9122  
Vishay Siliconix  
500-kHz Half-Bridge DC-DC Converter  
With Integrated Secondary Synchronous Rectification Drivers  
FEATURES  
D 12-V to 72-V Input Voltage Range  
D Compatible with ETSI 300 132-2  
D Frequency Foldback Eliminates Constant Current Tail  
D Advanced Maximum Current Control During Start-Up and  
Shorted Load  
D Integrated Half Bridge Primary Drivers  
(1-A Drive Capability)  
D Low Input Voltage Detection  
D Secondary Synchronous Signals With Programmable  
D Programmable Soft-Start Function  
Deadtime Delay  
D Over Temperature Protection  
APPLICATIONS  
D Voltage Mode Control  
D Voltage Feedforward Compensation  
D Network Cards  
D High Voltage Pre-Regulator Operates During Start-Up  
D Power Supply Modules  
D Current Sensing On Low-Side Primary Device  
DESCRIPTION  
Si9122 is a dedicated half-bridge IC ideally suited to fixed  
telecom applications where efficiency is required at low output  
voltages (e.g <3.3 V). Designed to operate within the fixed  
telecom voltage range of 33−72 V and withstand 100 V,  
100 ms transients, the IC is capable of controlling and driving  
both the low and high-side switching devices of a half bridge  
circuit and also controlling the switching devices on the  
secondary side of the bridge. Due to the very low on-resistance  
of the secondary MOSFETs, a significant increase in the  
efficiency can be achieved as compared with conventional  
Schottky diodes. Control of the secondary devices is by means  
of a pulse transformer and a pair of inverters. Such a system  
has efficiencies well in excess of 90% even for low output  
voltages. On-chip control of the dead time delays between the  
primary and secondary synchronous signals keep efficiencies  
high and prevent accidental destruction of the power  
transformer. An external resistor sets the switching frequency  
from 200 kHz to 600 kHz.  
Si9122 has advanced current monitoring and control circuitry  
which allow the user to set the maximum current in the primary  
circuit. Such a feature acts as protection against output  
shorting and also provides constant current into large  
capacitive loads during start-up or when paralleling power  
supplies. Current sensing is by means of a sense resistor on  
the low-side primary device.  
FUNCTIONAL BLOCK DIAGRAM  
V
IN  
+
C
D
VIN1  
−
C
D
1
BOOST  
To  
CC  
Power  
Transformer  
V
BST  
L
X
V
CC  
Pre-Reg  
H
CV  
CC  
(High)  
V
OUT  
EP  
Voltage  
Control  
Primary  
Drivers  
Voltage  
Information  
C
LOAD  
R
LOAD  
D
L
(Low)  
PWM  
t
R
S
CS2  
Current  
Control  
Secondary  
Drivers  
Timer  
BBM  
Pulse  
Transformer  
CS1  
SRH  
Si9122  
Half-Bridge  
R
BBM  
SRL  
Synchronous  
Controller  
Current  
Sense  
Error  
Amp  
Opto  
1.215 V  
Figure 1.  
Document Number: 71815  
S-40697—Rev. E, 19-Apr-04  
www.vishay.com  
1
Si9122  
Vishay Siliconix  
TECHNICAL DESCRIPTION  
Si9122 is a voltage mode controller for the half-bridge  
topology. With 100-V depletion mode MOSFET capability, the  
Si9122 is capable of powering directly from the high voltage  
bus to VCC through an external PNP pass transistor, or may be  
powered through an external regulator directly through the  
VCC pin. With PWM control, Si9122 provides peak efficiency  
throughout the entire line and load range. In order to simplify  
the traditional secondary synchronous rectification, Si9122  
provides intelligent gate drive signals to control the secondary  
MOSFETs. With independent gate drive signals from the  
controller, transformer design is no longer limited by the gate  
to a source rating of the MOSFETs. Si9122 provides constant  
VGS voltage, independent of line voltage to minimize the gate  
charge loss as well as conduction loss. A break-before-make  
function is included to prevent shoot through current or  
transformer shorting. Adjustable Break-Before-Make time is  
incorporated into the IC and is programmable by an external  
resistor value.  
Si9122 is available in both standard and lead (Pb)-free  
TSSOP-20 and standard SOIC-20 pin packages. In order to  
satisfy the stringent ambient temperature requirements,  
Si9122 is rated to handle the industrial temperature range of  
–40 to 85_C. When a situation arises which results in a rapid  
increase in primary (or secondary current) such as output  
shorted or start-up with a large output capacitor, control of the  
PWM generator is handed over to the the current loop.  
Monitoring of the load current is by means of a sense resistor  
on the primary low-side switch.  
DETAILED BLOCK DIAGRAM  
V
IN  
V
CC  
R
OSC  
High-Side  
Primary  
Driver  
BST  
9.1 V  
V
UVLO  
REG_COMP  
Pre-Regulator  
+
−
Int  
D
H
V
REF  
8.8 V  
L
X
Low-Side  
Driver  
V
V
CC  
V
INDET  
V
FF  
V
D
UV  
+
L
OSC  
−
V
REF  
EP  
SS  
Ramp  
V
SD  
+
−
PGND  
132 kW  
550 mV  
60 kW  
Error Amplifier  
CC  
−
+
Driver  
Control  
and  
+
−
SR  
H
V
PWM  
Comparator  
REF  
Timing  
2
20 mA  
SYNC  
Driver High  
I
SS  
OTP  
8 V  
V
CC  
SR  
L
CS2  
CS1  
Duty Cycle  
Control  
+
−
Peak DET  
SYNC  
Driver Low  
Si9122  
Over Current Protection  
GND  
C
BBM  
L_CONT  
Figure 2.  
Document Number: 71815  
S-40697—Rev. E, 19-Apr-04  
www.vishay.com  
2
 
Si9122  
Vishay Siliconix  
ABSOLUTE MAXIMUM RATINGS (ALL VOLTAGES REFERENCED TO GND = 0 V)  
V
V
V
V
(Continuous) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 V  
(100 ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14.5 V  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to 150_C  
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125_C  
IN  
IN  
a
Power Dissipation  
CC  
TSSOP-20 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850 mW  
SOIC-20 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100 mW  
(Continuous) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 V  
(100 ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115 V  
BST  
V
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 V  
Thermal Impedance (Q  
)
LX  
JA  
b
TSSOP-20 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75_C/W  
− V  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 V  
BST  
LX  
c
SOIC-20 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56_C/W  
, R  
REF OSC  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to V + 0.3 V  
CC  
Notes  
Logic Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to V + 0.3 V  
CC  
a. Device mounted on JEDEC compliant 1S2P test board..  
b. Derate −1.4 mW/_C above 25_C.  
c. Derate −1.8 mW/_C above 25_C.  
Analog Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to V + 0.3 V  
CC  
HV Pre-Regulator Input Current (continuous) . . . . . . . . . . . . . . . . . . . . . 5 mA  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating  
conditions for extended periods may affect device reliability.  
RECOMMENDED OPERATING RANGE (ALL VOLTAGES REFERENCED TO GND = 0 V)  
h
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 to 72 V  
C
C
C
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >680 pF  
IN  
BBM  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.7 nF  
SS  
C
ꢀ C  
VIN2  
. . . . . . . . . . . . . . . . . . . . . . . . . 100 mF/ESR ꢁ 100 mW, 0.1 mF  
VIN1  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1 mF  
REF  
V
CC  
Operating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 to 13.2 V  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1 mF  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mF  
BOOST  
LOAD  
CV  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.7 mF  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 to 600 kHz  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 to 72 kW  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 to 50 kW  
CC  
f
OSC  
Analog Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to V − 2 V  
CC  
R
R
OSC  
Digital Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to V  
CC  
Reference Voltage Output Current . . . . . . . . . . . . . . . . . . . . . . . . . 0 to 2.5 mA  
BBM  
a
SPECIFICATIONS  
Test Conditions  
Unless Otherwise Specified  
Limits  
−40 to 85_C  
f
= 500 kHz, V = 72 V  
IN  
NOM  
Parameter  
Symbol  
Minb  
Typc  
Maxb  
Unit  
V
INDET  
= 7.2 V; 10 V ꢁ V ꢁ 13.2 V  
CC  
Reference (3.3 V)  
Output Voltage  
V
V
CC  
= 12 V, 25_C Load = 0 mA  
3.2  
3.3  
3.4  
−50  
−75  
V
REF  
Short Circuit Current  
Load Regulation  
I
V
REF  
= 0 V  
mA  
mV  
dB  
SREF  
dVr/dlr  
PSRR  
I
= 0 to −2.5 mA  
−30  
REF  
Power Supply Rejection  
@ 100Hz  
60  
Oscillator  
Accuracy (1% R  
Max Frequency  
)
R
= 30 kW, f = 500 kHz  
NOM  
−20  
−40  
20  
%
OSC  
OSC  
F
R
OSC  
= 24 kW  
600  
100  
MAX  
kHz  
d
Foldback Frequency  
F
f
= 500 kHz, V  
− V  
ꢂ
1
5
0
m
V
FOBK  
NOM  
CS2  
CS1  
Error Amplifier  
Input Bias Current  
Gain  
I
V
EP  
= 0 V  
−15  
mA  
V/V  
MHz  
dB  
BIAS  
A
V
−2.2  
5
Bandwidth  
BW  
Power Supply Rejection  
Slew Rate  
PSRR  
SR  
@ 100Hz  
60  
0.5  
V/ms  
Current Sense Amplifier  
Input Voltage CM Range  
Input Amplifier Gain  
V
V
CS1  
− GND, V − GND  
CS2  
ꢃ150  
17.5  
5
mV  
dB  
CM  
A
VOL  
Input Amplifier Bandwidth  
BW  
MHz  
Document Number: 71815  
S-40697—Rev. E, 19-Apr-04  
www.vishay.com  
3
Si9122  
Vishay Siliconix  
a
SPECIFICATIONS  
Test Conditions  
Unless Otherwise Specified  
Limits  
−40 to 85_C  
f
= 500 kHz, V = 72 V  
IN  
NOM  
Parameter  
Symbol  
Minb  
Typc  
Maxb  
Unit  
V
= 7.2 V; 10 V ꢁ V ꢁ 13.2 V  
CC  
INDET  
Current Sense Amplifier  
Input amplifier Offset Voltage  
V
ꢃ5  
120  
0
mV  
OS  
dV = 0  
CS  
mA  
dV = 100 mV  
CS  
CL_CONT Current  
I
CL_CONT  
dV = 170 mV  
CS  
ꢂ
2
mA  
I
= I − I  
= 0  
PD  
PU  
CL_CONT  
Lower Current Limit Threshold  
V
TLCL  
100  
See Figure 6  
mV  
V
Upper Current Limit Threshold  
Hysteresis  
V
I
ꢂ
2
m
A
150  
THCL  
PD  
I
ꢄ 500 mA  
= 500 mA  
PU  
−50  
PU  
CL_CONT Clamp Level  
C
I
0.6  
90  
1.5  
95  
L_CONT(min)  
PWM Operation  
D
V
= 0 V  
92  
ꢄ15  
3
MAX  
EP  
f
= 500 kHz  
OSC  
e
Duty Cycle  
V
= 1.75 V  
%
V
EP  
D
MIN  
V
− V  
ꢂ
1
5
0
m
V
CS2  
CS1  
Pre-Regulator  
Input Voltage  
+V  
I
= 10 mA  
72  
10  
IN  
IN  
Input Leakage Current  
I
V
= 72 V, V ꢂ V  
IN CC REG  
LKG  
mA  
I
I
V
= 72 V, V  
ꢄ V  
SD  
86  
8
200  
14  
REG1  
REG2  
IN  
INDET  
Regulator Bias Current  
V
= 72 V, V  
ꢂ
V
mA  
IN  
INDET  
REF  
I
−29  
50  
−19  
82  
−9  
SOURCE  
Regulator_Comp  
V
CC  
= 12 V  
mA  
I
110  
SINK  
Pre-Regulator Drive Capacility  
I
V
CC  
ꢄ V  
REG  
20  
mA  
START  
7.4  
8.5  
9.1  
9.1  
9.2  
8.8  
8.8  
0.5  
10.4  
9.7  
V
V
V
ꢂ
V
REG1  
INDET REF  
V
Pre-Regulator Turn Off  
CC  
T
= 25_C  
= 25_C  
A
Threshold Voltage  
V
= 0 V  
REG2  
INDET  
V
7.15  
8.1  
9.8  
9.3  
Undervoltage Lockout  
g
V
UVLO  
V
CC  
Rising  
T
A
V
UVLO  
Hysteresis  
V
UVLOHYS  
Soft-Start  
Soft-Start Current Output  
I
Start-Up Condition  
Normal Operation  
12  
20  
28  
mA  
SS  
Soft-Start Completion Voltage  
V
7.35  
8.05  
8.85  
V
SS_COMP  
Shutdown  
V
Shutdown FN  
Hysteresis  
V
V
Rising  
INDET  
350  
550  
200  
720  
INDET  
INDET  
SD  
mV  
V
V
V
INDET  
VINDET Input Threshold Voltages  
V
− V Under Voltage  
V
UV  
V
INDET  
Rising  
3.13  
3.3  
0.3  
3.46  
INDET  
INDET  
IN  
V
Hysteresis  
V
INDET  
Over Temperature Protection  
Activating Temperature  
T Increasing  
160  
130  
J
_C  
De-Activating Temperature  
T Decreasing  
J
Converter Supply Current (VCC  
)
Shutdown  
I
I
I
Shutdown, V  
= 0 V  
50  
4
350  
12  
mA  
CC1  
CC2  
CC3  
INDET  
Switching Disabled  
Switching w/o Load  
V
INDET  
ꢄ
V
8
REF  
V
ꢂ V , f = 500 kHz  
REF NOM  
5
10  
14  
INDET  
mA  
V
= 12 V, C = C = 3 nF  
DH DL  
CC  
C
Switching with C  
I
21  
LOAD  
CC4  
= C  
= 0.3 nF  
SRH  
SRL  
Document Number: 71815  
S-40697—Rev. E, 19-Apr-04  
www.vishay.com  
4
 
Si9122  
Vishay Siliconix  
a
SPECIFICATIONS  
Test Conditions  
Unless Otherwise Specified  
Limits  
−40 to 85_C  
f
= 500 kHz, V = 72 V  
IN  
NOM  
Parameter  
Symbol  
Minb  
Typc  
Maxb  
Unit  
V
= 7.2 V; 10 V ꢁ V ꢁ 13.2 V  
INDET  
CC  
Output MOSFET DH Driver (High-Side)  
Output High Voltage  
Output Low Voltage  
Boost Current  
V
Sourcing 10 mA  
Sinking 10 mA  
V
BST  
− 0.3  
OH  
V
mA  
A
V
V
LX  
+ 0.3  
OL  
I
V
V
= 72 V, V  
= 72 V, V  
= V + V  
1.3  
1.9  
−0.7  
−1.0  
1.0  
2.7  
BST  
LX  
BST  
BST  
LX  
CC  
L
X
Current  
I
= V + V  
−1.1  
−0.4  
LX  
SOURCE  
LX  
LX  
CC  
Peak Output Source  
Peak Output Sink  
Rise Time  
I
−0.75  
V
= 10 V  
= 3 nF  
CC  
I
0.75  
SINK  
t
35  
r
C
ns  
DH  
Fall Time  
t
f
35  
Output MOSFET DLDriver (Low-Side)  
Output High Voltage  
Output Low Voltage  
Peak Output Source  
Peak Output Sink  
Rise Time  
V
Sourcing 10 mA  
Sinking 10 mA  
V
CC  
− 0.3  
OH  
V
A
V
0.3  
OL  
SOURCE  
I
−1.0  
1.0  
35  
−0.75  
V
CC  
= 10 V  
= 3 nF  
I
0.75  
SINK  
t
r
C
DL  
ns  
Fall Time  
t
f
35  
Synchronous Rectifier (SRH, SRL) Drivers  
Output High Voltage  
Output Low Voltage  
V
Sourcing 10 mA  
Sinking 10 mA  
V
CC  
− 0.4  
OH  
V
V
0.4  
OL  
t
t
t
t
55  
40  
BBM1  
BBM2  
BBM3  
BBM4  
T
A
= 25_C, R  
= 33 kW, See Figure 3  
= 33 kW, L = 72 V  
BBM  
f
Break-Before-Make Time  
ns  
35  
T
= 25_C,R  
A
BBM  
X
55  
Peak Output Source  
Peak Output Sink  
Rise Time  
I
−100  
100  
35  
SOURCE  
V
= 10 V  
mA  
ns  
CC  
I
SINK  
t
r
C
= C  
= 0.3 nF  
SRH  
SRL  
Fall Time  
t
f
35  
Voltage Mode  
Error Amplifier  
Current Mode  
Current Amplifier  
Notes  
Input to high-side switch off  
Input to low-side switch off  
ꢄ200  
ꢄ200  
t
d1DH  
d2DL  
ns  
ns  
t
Input to high-side switch off  
Input to low-side switch off  
ꢄ200  
ꢄ200  
t
d3DH  
t
d4DL  
a. Refer to PROCESS OPTION FLOWCHART for additional information.  
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum (−40_ to 85_C).  
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.  
d.  
F
when V  
at clamp level. Typical foldback frequency change +20%, −30% over temperature.  
MIN  
CL_CONT  
e. Measured on SRL or SRH outputs.  
f.  
g.  
h.  
See Figure 3 for Break-Before-Make time definition.  
tracks V by a diode drop  
V
UVLO  
REG1  
C
may be required to reduce noise into BBM pin for non-optimum layout.  
BBM  
Document Number: 71815  
S-40697—Rev. E, 19-Apr-04  
www.vishay.com  
5
 
Si9122  
Vishay Siliconix  
TIMING DIAGRAM FOR MOS DRIVERS  
V
CC  
PWM  
PWM  
PWM  
PWM  
GND  
V
CC  
D
L
D
L
GND  
V
CC  
SR  
L
SR  
L
GND  
V
BST  
D
H
D
H
V
MID  
D
H
D
H
GND  
V
CC  
SR  
H
SR  
H
GND  
Time  
D
H
t
t
t
t
BBM4  
BST = L + V  
BBM1  
BBM2  
BBM3  
X
CC  
50%  
V L  
X
L
X
D , L  
H
X
D , L  
V
V
H
X
MID  
SR  
H
CC  
50%  
D , L  
H
X
GND  
t
t
BBM4  
BBM3  
D
L
SR  
L
SR  
L
V
CC  
GND  
Specification Table  
Return to:  
Rectification Timing Sequence  
t
t
BBM2  
BBM1  
Primary MOSFET Drivers  
Secondary MOSFET Drivers  
Figure 3.  
Document Number: 71815  
S-40697—Rev. E, 19-Apr-04  
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6
 
Si9122  
Vishay Siliconix  
PIN CONFIGURATION  
Si9122DQ (TSSOP-20)  
Si9122DW (SOIC-20)  
ORDERING INFORMATION  
V
BST  
1
2
3
4
5
6
7
8
9
10  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
Part Number  
Temperature Range  
Package  
IN  
REG_COMP  
D
H
Si9122DQ-T1  
Si9122DQ-T1—E3  
Si9122DQ  
V
CC  
L
X
Tape and Reel  
V
D
L
REF  
Bulk  
Tape and Reel  
Bulk  
−40 to 85_C  
GND  
PGND  
Si9122DW-T1  
Si9122DW  
R
SR  
H
OSC  
EP  
SR  
L
V
SS  
INDET  
CS1  
CS2  
BBM  
Eval Kit  
Temperature Range  
Board Type  
C
L_CONT  
Si9122DB  
Issue 3  
Surface Mount and  
Thru-Hole  
−10 to 70_C  
Top View  
PIN DESCRIPTION  
Pin Number  
Name  
Function  
1
2
3
4
5
6
7
V
Input supply voltage for the start-up circuit.  
IN  
REG_COMP  
Control signal for an external pass transistor.  
Supply voltage for internal circuitry  
3.3-V reference, decoupled with 1-mF capacitor  
Ground  
V
CC  
V
REF  
GND  
R
OSC  
External resistor connection to oscillator  
Voltage control input  
EP  
V
under voltage detect and shutdown function input. Shuts down or disables switching when V  
falls below  
IN  
INDET  
8
V
INDET  
preset threshold voltages and provides the feed forward voltage.  
9
CS1  
CS2  
Current limit amplifier negative input  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
Current limit amplifier positive input  
C
Current limit compensation  
L_CONT  
BBM  
Programmable Break-Before-Make time connection to an external resistor to set time delay  
Soft-Start control − external capacitor connection  
Signal transformer drive, sequenced with the primary side.  
Signal transformer drive, sequenced with the primary side.  
Power ground.  
SS  
SR  
L
SR  
H
PGND  
D
L
Low-side gate drive signal – primary  
L
X
High-side source and transformer connection node  
High-side gate drive signal – primary  
D
H
BST  
Bootstrap voltage to drive the high-side n-channel MOSFET switch  
Document Number: 71815  
S-40697—Rev. E, 19-Apr-04  
www.vishay.com  
7
Si9122  
Vishay Siliconix  
V
CC  
V
IN  
Pre-Regulator  
+
V
REG  
9.1 V  
Bandgap  
Reference  
3.3 V  
−
9.1 V  
V
REF  
V
UVLO  
+
−
+
−
V
V
UV  
High-Side  
Primary  
Driver  
V
INDET  
V
REF  
8.6 V  
C
L_CONT  
SD  
BST  
+
−
Voltage  
Feedforward  
Frequency  
Foldback  
160_C Temp  
High Voltage  
Interface  
D
H
Protection  
550 mV  
L
X
V
SD  
V
V
UV UVLO  
R
OSC  
OSC  
OTP  
Oscillator  
Clock  
V
CC  
Clock  
Logic  
Low-Side  
Driver  
132 kW  
D
L
60 kW  
EP  
−
+
−
+
Logic  
Timer  
V
/2  
REF  
PGND  
PWM  
Generator  
Current  
Control  
Gain  
V
V
CC  
Synchronous  
Driver  
CS2  
CS1  
Loop  
+
−
Control  
(High)  
SR  
H
100 mV  
Blanking  
CC  
Synchronous  
Driver  
C
L_CONT  
GND  
(Low)  
V
CC  
SR  
L
BBM  
Si9122  
20 mA  
8 V  
Soft-Start  
SS  
SS Enable  
Figure 4.  
Detailed Functional Block  
DETAILED OPERATION  
Start-Up  
of the VCC capacitor, bootstrap capacitor and the soft-start  
capacitor. The value of the VCC capacitor should therefore be  
chosen to be capable of maintaining switch mode operation  
until the VCC can be supplied from the external circuit (e.g via  
a power transformer winding and zener regulator). Feedback  
from the output of the switch mode supply charges VCC above  
VREG and fully disconnects the pre-regulator, isolating VCC  
from VIN. VCC is then maintained above VREG for the duration  
of switch mode operation. In the event of an over voltage  
condition on VCC, an internal voltage clamp turns on at 14.5 V  
to shunt excessive current to GND.  
When VINEXT rises above 0 V, the internal pre-regulator begins  
to charge up the Vcc capacitor. Current into the external VCC  
capacitor is limited to typically 40 mA by the internal DMOS  
device. When Vcc exceeds the UVLO voltage of 8.8 V a  
soft-start cycle of the switch mode supply is initiated. The VCC  
supply continues to be charged by the pre-regulator until VCC  
equals Vreg. During this period, between VUVLO and VREG  
,
excessive load current will result in VCC falling below VUVLO  
and stopping switch mode operation. This situation is avoided  
by the hysteresis between VREG and VUVLO and correct sizing  
Document Number: 71815  
S-40697—Rev. E, 19-Apr-04  
www.vishay.com  
8
Si9122  
Vishay Siliconix  
Care needs to be taken if there is a delay prior to the external  
circuit feeding back to the VCC supply. To prevent excessive  
power dissipation within the IC it is advisable to use an external  
PNP device. A pin has been incorporated on the IC,  
(REG_COMP) to provide compensation when employing the  
external device. In this case the VIN pin is connected to the  
base of the PNP device and controls the current, while the  
REG_COMP pin determines the frequency compensation of  
the circuit. To understand the operation please refer to  
Figure 5.  
period. Start-up from a VINDET power down is also initiated  
under soft-start control.  
Half-Bridge and Synchronous Rectification Timing  
Sequence  
The PWM signal generated within the Si9122 controls the low  
and high-side bridge drivers on alternative cycles. A period of  
inactivity always results after initiation of the soft-start cycle  
until the soft-start voltage reaches approximately 1.2 V and  
PWM controlled switching begins. The first bridge driver to  
switch is always the low-side, DL as this allows charging of the  
high-side boost capacitor.  
The soft-start circuit is designed for the dc-dc converter to  
start-up in an orderly manner and reduce component stress on  
the IC. This feature is programmable by selecting an external  
C
SS. An internal 20-mA current source charges CSS from 0 V  
The timing and coordination of the drives to the primary and  
secondary stages is very important and shown in Figure 3. It  
is essential to avoid the situation where both of the secondary  
MOSFETs are on when either the high or the low-side switch  
are active. In this situation the transformer would effectively be  
presented with a short across the output. To avoid this, a  
dedicated break-before-make circuit is included which will  
generate non overlapping waveforms for the primary and the  
secondary drive signals. This is achieved by a programmable  
timer which delays the switching on of the primary driver  
relative to the switching off of the related secondary and  
subsequently delays the switching on of the secondary relative  
to the switching off of the related primary.  
to the final clamped voltage of 8 V. In the event of UVLO or  
shutdown, VSS will be held low (<1 V) disabling driver  
switching. To prevent oscillations, a longer soft-start time may  
be needed for high capacitive loads and high peak output  
current applications.  
Reference  
The reference voltage of Si9122 is set at 3.3 V. The reference  
voltage is de-coupled externally with 0.1-mF capacitor. The  
VREF voltage is 0 V in shutdown mode and has 50-mA source  
capability.  
Typical variation in the tBBM3 and tBBM4 delay with LX voltage  
is shown in graphs tBBM3, tBBM4 and for RBBM = 33 kW. This  
is due to a reduction in propagation delay through the high-side  
driver path as the LX voltage increases and must be  
considered in setting the delay for the system level design.  
Variation of BBM time with RBBM is shown in graph tBBM1 to  
Voltage Mode PWM Operation  
Under normal load conditions, the IC operates in voltage mode  
and generates a fixed frequency pulse width modulated signal  
to the drivers. Duty cycle is controlled over a wide range to  
maintain output voltage under line and load variation. Voltage  
feed forward is also included to take account of variations in  
supply voltage VIN.  
tBBM4 vs. RBBM  
.
Primary High- and Low-Side MOSFET Drivers  
The drive voltage for the low-side MOSFET switch is provided  
directly from VCC. The high-side MOSFET however requires  
the gate voltage to be enhanced above VIN. This is achieved  
by bootstraping the VCC voltage onto the LX voltage (the  
high-side MOSFET source). In order to provide the  
bootstrapping an external diode and capacitor are required as  
shown on the application schematic. The capacitor will charge  
up after the low-side driver has turned on. The switch gate  
drive signals DH and DL are shown in Figure 3.  
In the half-bridge topology requiring isolation between output  
and input, the reference voltage and error amplifier must be  
supplied externally, usually on the secondary side. The error  
information is thus passed to the power controller through an  
opto-coupling device. This information is inverted, hence 0 V  
represents the maximum duty cycle, whilst 2 V represents  
minimum duty cycle. The error information enters the IC via pin  
EP, and is passed to the PWM generator via an inverting  
amplifier. The relationship between Duty cycle and VEP is  
shown in the Typical Characteristic Graph,Duty Cycle vs. VEP  
25_C, page 19. Voltage feedforward is implemented by taking  
the attenuated VIN signal at VINDET and directly modulating the  
duty cycle. The relationship between Duty cycle and VINDET is  
shown in the the Typical Characteristic Graph, Duty Cycle vs.  
VINDET, page 16.  
Secondary MOSFET Drivers  
The secondary side MOSFETs are driven from the Si9122 via  
a center tapped pulse transformer and inverter drivers. The  
waveforms from the IC SRH and SRL are shown in Figure 3.  
Of importance is the relative voltage between SRH and SRL,  
i.e. that which is presented across the primary of the pulse  
transformer. When both potentials of SRL and SRH are equal  
then by the action of the inverting driver both secondary  
MOSFETs are left on.  
At start-up, i.e., once VCC is greater than VUVLO, switching is  
initiated under soft-start control which increases primary  
switch on-times linearly from DMIN to DMAX over the soft-start  
Document Number: 71815  
S-40697—Rev. E, 19-Apr-04  
www.vishay.com  
9
 
Si9122  
Vishay Siliconix  
Oscillator  
VIN Voltage Monitor –VINDET  
The oscillator is designed to operate at a nominal frequency of  
500 kHz. The 500-kHz operating frequency allows the  
converter to minimize the inductor and capacitor size,  
improving the power density of the converter. The oscillator  
and therefore the switching frequency is programmable by  
attaching a resistor to the ROSC pin. Under overload conditions  
the oscillator frequency is reduced by the current overload  
protection to enable a constant current to be maintained into  
a low impedance circuit.  
The chip provides a means of sensing the voltage of VIN, and  
withholding operation of the output drivers until a minimum  
voltage of VREF (3.3 V, 300-mV hysteresis), is achieved. This  
is achieved by choosing an appropriate resistive tap between  
the ground and VIN, and comparing this voltage with the  
reference voltage. When the applied voltage is greater than  
VREF, the output drivers are activated as normal. VINDET also  
provides the input to the voltage feed forward function.  
Current Limit  
However, if the divided voltage applied to the VINDET pin is  
greater than VCC −0.3 V, the high-side driver, DH, will stop  
switching until the voltage drops below VCC −0.3 V. Thus, the  
resistive tap on the VIN divider must be set to accommodate  
the normal VCC operating voltage to avoid this condition.  
Alternatively, a zener clamp diode from VINDET to GND may  
also be used.  
Current mode control providing constant current operation is  
achieved by monitoring the differential voltage between the  
CS1and CS2 pins which are connected across a primary  
low-side sense resistor. Once this differential voltage exceeds  
the 100-mV trigger point, the voltage on the CL_CONT pin is  
pulled lower at a rate proportional to the excess voltage and the  
value of the external capacitor connected between the  
Shutdown Mode  
CL_CONT pin and ground. If the voltage between CS1 and CS2  
If VINDET is forced below the lower threshold, a minimum of  
350 mV(VSD), the device will enter SHUTDOWN mode. This  
powers down all unnecessary functions of the controller,  
ensures that the primary switches are off and results in a low  
level current demand from the VIN or VCC supplies.  
exceeds 150 mV the CL_CONT capacitor is discharged rapidly  
resulting in minimum duty cycle and frequency immediately.  
Lowering the CL_CONT voltage results in PWM control of the  
output drive being taken over by the current limit control loop.  
Current control works to initially reduce the switching duty  
cycle down to DMIN (12.5%). Further reduction in the duty  
cycle is accompanied by a reduction in switching frequency at  
a rate proportional to the duty cycle. This prevents the on time  
of the primary drivers fnom from reducing below 100 ns and  
avoiding a current tail. Frequency reduction occurs to a  
maximum of one fifth of the nominal frequency.  
V
INEXT  
R
EXT  
V
IN  
PNP Ext  
(Si9122)  
Auxillary  
CC  
HV  
DMOS  
V
With constant current mode control of on time and with  
reduced operating frequency, protection of the MOSFET  
switches is increased during fault conditions. Minimum duty  
cycle and reduced frequency switching continues for the  
duration of the fault condition. The converter reverts to voltage  
mode operation immediately whenever the primary current  
fails to reach the limit level. CL_CONT clamps to 6.5 V when not  
in current limit.  
V
CC  
REG_COMP  
EXT  
C
0.5 mF  
VCC  
C
2 nF  
14.5 V  
V
REF  
GND  
The soft-start function does not apply under current limit as this  
would constitute hiccup mode operation.  
Figure 5. High-Voltage Pre-Regulator Circuit  
Document Number: 71815  
S-40697—Rev. E, 19-Apr-04  
www.vishay.com  
10  
Si9122  
Vishay Siliconix  
V
CC  
OSC  
AV  
I
PU  
120 mA (nom)  
+
GM  
Peak Detect  
V
C
L_CLAMP  
OFFSET  
−
C
R
L_CONT  
CS1  
CS2  
−
AV  
A
ꢅ150 mV  
ꢅ100 mV  
V
+
EXT  
Blank  
+
C
EXT  
GM  
I
PD  
0 − 240 mA (nom)  
−
A
V
Figure 6 . Current Limit Circuit  
TYPICAL CHARACTERISTICS  
Document Number: 71815  
S-40697—Rev. E, 19-Apr-04  
www.vishay.com  
11  
Si9122  
Vishay Siliconix  
TYPICAL CHARACTERISTICS  
F
OSC  
vs. R  
@ V = 12 V  
V vs. Temperature, V = 12 V  
REF CC  
OSC  
CC  
600  
500  
400  
300  
200  
3.300  
3.295  
3.290  
3.285  
3.280  
3.275  
3.270  
20  
30  
40  
50  
(kW)  
60  
70  
80  
−50  
−25  
0
25  
50  
75  
100  
R
Temperature (_C)  
OSC  
V
REG  
vs. Temperature, V = 48 V  
IN  
SRL, SRH Duty Cycle vs. V  
EP  
10.0  
9.5  
9.0  
8.5  
8.0  
7.5  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.6 V = V  
INDET  
4.8 V  
7.2 V  
V
ꢂ V  
REF  
INDET  
TC = −11 mV/C  
V
CC  
= 12 V  
−50 −25  
0
25  
50  
75  
100 125 150  
0.0  
0.5  
1.0  
1.5  
2.0  
Temperature (_C)  
V
EP  
(V)  
I
SS  
vs. Temperature  
V
SS  
vs. Temperature, V = 12 V  
CC  
25  
23  
21  
19  
17  
15  
8.20  
8.15  
8.10  
8.05  
8.00  
7.95  
7.90  
V
CC  
= 13 V  
TC = +1.25 mV/C  
V
CC  
= 12 V  
V
INDET  
ꢂ V  
REF  
V
CC  
= 10 V  
−50  
−25  
0
25  
50  
75  
100  
125  
−50 −25  
0
25  
50  
75  
100 125 150  
Temperature (_C)  
Temperature (_C)  
Document Number: 71815  
S-40697—Rev. E, 19-Apr-04  
www.vishay.com  
12  
Si9122  
Vishay Siliconix  
TYPICAL CHARACTERISTICS  
I
vs. Temperature  
REG2  
I
vs. Temperature  
CC3  
11  
10  
9
13  
12  
11  
10  
9
8
7
6
8
5
7
−50  
−25  
0
25  
50  
75  
100  
−50  
−25  
0
25  
50  
75  
100  
800  
800  
Temperature (_C)  
Temperature (_C)  
D , D I  
H
vs. V  
OL  
D , D I  
vs. V  
OH  
L
SINK  
H
L
SOURCE  
250  
200  
150  
100  
50  
250  
200  
150  
100  
50  
V
= 12 V  
V
CC  
= 12 V  
CC  
0
0
0
200  
400  
600  
0
200  
400  
600  
800  
V
(mV)  
V
(mV)  
OL  
OH  
SRL, SRH I  
vs. V  
OH  
SRL, SRH I  
vs. V  
OL  
SOURCE  
SINK  
35  
30  
25  
20  
15  
10  
5
35  
30  
25  
20  
15  
10  
5
V
CC  
= 12 V  
V
CC  
= 12 V  
0
0
0
200  
400  
600  
800  
0
200  
400  
(mV)  
600  
V
(mV)  
V
OH  
OL  
Document Number: 71815  
S-40697—Rev. E, 19-Apr-04  
www.vishay.com  
13  
Si9122  
Vishay Siliconix  
TYPICAL CHARACTERISTICS  
t
vs. R , V = 0 V  
BBM EP  
t
vs. R , V = 1.65 V  
BBM EP  
BBM  
BBM  
100  
90  
80  
70  
60  
50  
40  
30  
20  
65  
55  
45  
35  
25  
15  
t
t
BBM4  
V
CC  
= 12 V  
V
CC  
= 12 V  
t
t
BBM1  
BBM1  
BBM4  
t
t
BBM2  
BBM3  
t
t
BBM3  
BBM2  
25  
30  
35  
(kW)  
40  
45  
25  
30  
35  
40  
45  
R
R
(kW)  
BBM  
BBM  
t
vs. Temperature, V = 0 V  
t vs. Temperature, V = 1.65 V  
BBM1, 2 EP  
BBM1, 2  
EP  
80  
70  
60  
50  
40  
30  
60  
55  
50  
45  
40  
35  
30  
t
= 13 V  
BBM1  
V
= 12 V  
BBM  
CC  
t
= 10 V  
BBM1  
t
= 12 V  
BBM1  
R
= 33 kW  
t
t
= 12  
= 13  
BBM1  
t
= 10 V  
BBM1  
BBM1  
V
= 12 V  
= 33 kW  
CC  
BBM  
R
t
= 10 V  
BBM2  
t
= 10 V  
BBM2  
t
= 12 V  
BBM2  
t
= 12 V  
BBM2  
t
= 13 V  
t
= 13 V  
0
BBM2  
BBM2  
−50  
−25  
25  
50  
75  
100  
125  
−50  
−25  
0
25  
50  
75  
100  
125  
Temperature (_C)  
Temperature (_C)  
t
vs. Temperature, V = 0 V  
t vs. Temperature, V = 1.65 V  
BBM3, 4 EP  
BBM3, 4  
EP  
80  
70  
t
= 10 V  
V
= 0 V  
BBM  
V
= 1.65 V  
BBM  
BBM4  
EP  
EP  
t
= 13 V  
R
= 33 kW  
R
= 33 kW  
BBM4  
65  
60  
55  
50  
45  
40  
35  
30  
70  
60  
50  
40  
30  
20  
t
= 12 V  
BBM4  
t
= 12 V  
BBM4  
t
= 10 V  
BBM4  
t
= 13 V  
BBM4  
t
= 13 V  
BBM3  
t
= 12 V  
BBM3  
t
= 12 V  
BBM3  
t
= 10 V  
BBM3  
t
= 10 V  
BBM3  
t
= 13 V  
BBM3  
−50  
−25  
0
25  
50  
75  
100  
125  
−50  
−25  
0
25  
50  
75  
100  
125  
Temperature (_C)  
Temperature (_C)  
Document Number: 71815  
S-40697—Rev. E, 19-Apr-04  
www.vishay.com  
14  
Si9122  
Vishay Siliconix  
TYPICAL CHARACTERISTICS  
t
vs. V vs. V  
t
vs. V vs. V  
INDET CC  
BBM1, 2  
CC  
INDET  
BBM1, 2  
80  
70  
60  
50  
40  
30  
55  
50  
45  
40  
35  
t
= 13 V  
= 10 V  
BBM1  
BBM1  
t
= 13 V  
BBM1  
t
= 12 V  
BBM1  
t
t
t
= 12 V  
BBM1  
BBM1  
= 10 V  
= 13 V  
V
EP  
= 0 V  
V
= 1.65 V  
EP  
t
= 12 V  
BBM2  
t
= 10 V  
BBM2  
t
BBM2  
t
= 13 V  
BBM2  
t
= 12 V  
5.5  
BBM2  
t
= 10 V  
4.5  
BBM2  
3.5  
4.5  
6.5  
7.5  
3.5  
5.5  
6.5  
7.5  
V
INDER  
(V)  
V
INDER  
(V)  
t
vs. V vs. V  
t
vs. V vs. V  
INDET CC  
BBM3, 4  
CC  
INDET  
BBM3, 4  
80  
70  
60  
50  
40  
30  
65  
60  
55  
50  
45  
40  
35  
30  
t
= 10 V  
BBM4  
V
= 0 V  
EP  
t
t
= 12 V  
= 13 V  
BBM4  
t
= 10 V  
BBM4  
t
= 12 V  
BBM4  
BBM4  
t
= 13 V  
BBM4  
V
= 1.65 V  
EP  
t
= 12 V  
BBM3  
t
= 10 V  
BBM3  
t
= 12 V  
BBM3  
t
= 13 V  
BBM3  
t
= 10 V  
BBM3  
t
= 13 V  
4.5  
BBM3  
3.5  
5.5  
6.5  
7.5  
3.5  
4.5  
5.5  
6.5  
7.5  
V
INDER  
(V)  
V
INDER  
(V)  
Current Sense Duty Cycle vs. V  
CLCONT  
V
= 7.2 V 25_C  
I
vs. R  
(V = 7.2 V)  
IN  
INDET  
OUT  
LOAD  
500  
400  
500  
400  
300  
200  
100  
0
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
60  
50  
40  
30  
20  
10  
0
Frequency  
Frequency  
D%  
D%  
300  
200  
D
DL  
D
SRL  
I
OUT  
100  
0
V
ROSC  
V
OUT  
0
1
2
3
4
5
0.0  
0.2  
0.4  
0.6  
(W)  
0.8  
1.0  
V
(V)  
R
CLCONT  
LOAD  
Document Number: 71815  
S-40697—Rev. E, 19-Apr-04  
www.vishay.com  
15  
Si9122  
Vishay Siliconix  
TYPICAL WAVEFORMS  
Figure 7.  
Foldback Mode, R = 0.02 W  
Figure 8.  
Normal Mode, R = 0.1 W  
L
L
SRL 10 V/div  
SRL 10 V/div  
I
5 A /div  
I
5 A /div  
5 V/div  
OUT  
OUT  
D
L
10 V/div  
D
L
CS2 5 V/div  
CS2 50 mV/div  
2 ms/div  
2 ms/div  
Figure 9.  
V
CC  
Ramp-Up  
Figure 10. Over Load Recovery—Minimum Overshoot  
V
CL  
2 V/div  
V
IN  
2 V/div  
V
EP  
2 V/div  
I
10 A/div  
OUT  
V
OUT  
2 V/div  
V
CC  
2 V/div  
2 ms/div  
200 ms/div  
Figure 11. Effective BBM—Measured On Secondary  
Figure 12. Drive Waveforms  
DH 5 V/div  
LX 20 V/div  
SRL 5 V/div  
D
L
5 V/div  
SRH 2 V/div  
SRL 2 V/div  
SRH 5 V/div  
500 ns/div  
500 ns/div  
Document Number: 71815  
S-40697—Rev. E, 19-Apr-04  
www.vishay.com  
16  
V
V
CC  
P1  
VIN  
1
IN  
36 − 72 V  
C1  
1 mF  
100 V  
R1  
90 kW  
R27  
1 MW  
5.6  
P2  
1
7, 8  
D2  
Q2  
FZT953  
Q1  
FMMT493  
10MQ100N  
GND  
4
3
2
3
2
R3  
D1  
1
1
1
3
Q3  
Si4486EY  
1, 2, 3  
L
X
470 kW  
PNP  
BAS19  
R2  
R5  
1 MW  
10 kW  
R2  
10 W  
1
20  
V
BST  
IN  
C8  
0.1 mF  
2
3
4
5
6
7
8
19  
18  
17  
16  
15  
14  
13  
V
CC  
REG_COMP  
D
H
5.6  
7, 8  
2 nF  
V
L
X
D3  
CC  
JP1  
10MQ100N  
C9  
C29  
1
2
4
V
D
L
REF  
SD  
EN  
C10  
4.7 mF  
16 V  
Q4  
Si4486EY  
GND  
ROSC  
EP  
PGND  
SR  
1, 2, 3  
3
470 pF  
10 V  
1 mF  
10 V  
P3  
1
H
C30  
200 − 800 pF  
R6  
35 kW  
SR  
AGND  
L
C11  
1000 pF  
R7  
2 kW  
V
SS  
BBM  
INDET  
9
12  
11  
CS1  
CS2  
C12  
15 pF  
10  
C14  
CL_CONT  
4.7 nF  
R9  
27 kW  
R8  
5 kW  
C13  
4700 pF  
R10  
R12  
0.02 W  
2
2 kW  
R11  
1
/
W
2 kW  
SRH  
SRL  
V
CC  
EP  
V
CC  
4
4
2
Si3552DV  
5.6  
7, 8  
3
1, 2, 3  
Q5  
C17  
0.1 mF  
R16  
10 W  
V
IN  
Si4886DY  
Q7B  
Q7A  
4
6
C1  
15 mF  
50 V  
C4  
15 mF  
50 V  
+
+
C2  
1 mF  
50 V  
5.6  
7, 8  
3
1, 2, 3  
D8  
BAS19  
1
T1 1, 2  
Q6  
1
Si4886DY  
T3  
5
5, 6  
LEP-9080  
D4  
30BQ040  
C15  
L
X
5
4
R14  
P4  
3.3 V  
R13  
3.3 V  
11, 12  
15 W  
3.3 W  
1000 pF  
C16  
7, 8, 9  
1, 2, 3  
800 mW  
1
C20  
680 pF  
100 V  
R15  
15 A  
9, 10  
C22  
47 mF  
10 V  
C23  
47 mF  
10 V  
C24  
47 mF  
10 V  
C32  
10 mF  
6.3 V  
R17  
NU  
P5  
D7  
30BQ040  
3.3 W  
D5  
1000 pF  
30BQ040  
7, 8  
3, 4  
1
5.6  
EPC19  
D6  
1, 2, 3  
7, 8  
MBR0520  
3.3 V  
R21  
Q7  
Si4886DY  
C25  
C33  
0.1 mF  
51 W  
0.033 mF  
TP1  
1
4
4
+
+
C7  
C5  
1 mF  
50 V  
C6  
5.6  
7, 8  
15 mF  
15 mF  
50 V  
C26  
1, 2, 3  
50 V  
R26  
5.6 kW  
R18  
0.1 mF  
R22  
Q8  
Si4886DY  
33 kW  
R20  
20 kW  
(5)  
7
300 kW  
(3)  
3
U3  
AD820  
6
2
5
Q10B  
+
−
C18  
0.1 mF  
2
3
(1)  
8
C19  
4.7 mF  
16 V  
R23  
1
(4)  
18.6 kW  
U03  
LM7301  
R25  
2 kW  
4
6
P6  
1
4
(2)  
1
R19  
3.9 kW  
C27  
0.1 mF  
C28  
1000 pF  
PGND  
D9  
3
2
1
P7  
1
C21  
0.047 mF  
25 V  
3
3
2
1
Q10A  
T2  
6
5
4
Si3552DV  
5
PGND  
BAV99  
U2  
MOC207  
1
SRH  
SRL  
6
5
1
2
3
D10  
2
1
EP7  
R24  
1 MW  
7
BAV99  
V
CC  
EP  
C34, 0.1 mF  

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