SIHB22N60E [VISHAY]
E Series Power MOSFET; E系列功率MOSFET
| 型号： | SIHB22N60E |
| 厂家： | 
VISHAY |
| 描述： | E Series Power MOSFET |
| 文件： | 总9页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiHB22N60E
Vishay Siliconix
www.vishay.com
E Series Power MOSFET
FEATURES
• Low Figure-of-Merit (FOM) Ron x Qg
PRODUCT SUMMARY
VDS (V) at TJ max.
DS(on) max. at 25 °C ()
Qg max. (nC)
650
• Low Input Capacitance (Ciss
)
R
VGS = 10 V
0.18
• Reduced Switching and Conduction Losses
• Ultra Low Gate Charge (Qg)
86
11
Q
gs (nC)
gd (nC)
• Avalanche Energy Rated (UIS)
Q
24
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Configuration
Single
D
D2PAK (TO-263)
APPLICATIONS
• Server and Telecom Power Supplies
• Switch Mode Power Supplies (SMPS)
• Power Factor Correction Power Supplies (PFC)
• Lighting
G
D
- High-Intensity Discharge (HID)
- Fluorescent Ballast Lighting
• Industrial
G
S
S
N-Channel MOSFET
- Welding
- Induction Heating
- Motor Drives
- Battery Chargers
- Renewable Energy
- Solar (PV Inverters)
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free
SiHB22N60E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
VDS
600
20
V
VGS
30
T
C = 25 °C
21
13
Continuous Drain Current (TJ = 150 °C)
VGS at 10 V
ID
TC = 100 °C
A
Pulsed Drain Currenta
IDM
56
Linear Derating Factor
Single Pulse Avalanche Energyb
1.8
W/°C
mJ
W
EAS
PD
367
Maximum Power Dissipation
227
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dtd
TJ, Tstg
-55 to +150
37
°C
TJ = 125 °C
for 10 s
dV/dt
V/ns
°C
11
Soldering Recommendations (Peak Temperature)c
300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 5.1 A.
c. 1.6 mm from case.
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
S13-2460-Rev. F, 02-Dec-13
Document Number: 91472
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB22N60E
Vishay Siliconix
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
RthJC
-
-
62
°C/W
Maximum Junction-to-Case (Drain)
0.55
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS
VDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
600
-
-
-
V
V/°C
V
VDS Temperature Coefficient
Reference to 25 °C, ID = 250 μA
VDS = VGS, ID = 250 μA
-
2
-
-
-
-
-
0.71
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
-
-
4
VGS
=
20 V
100
1
nA
VDS = 600 V, VGS = 0 V
-
Zero Gate Voltage Drain Current
IDSS
μA
VDS = 480 V, VGS = 0 V, TJ = 125 °C
-
10
0.18
-
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
VGS = 10 V
ID = 11 A
0.15
6.4
VDS = 8 V, ID = 5 A
S
Input Capacitance
Ciss
Coss
Crss
-
-
-
1920
90
-
-
-
VGS = 0 V,
Output Capacitance
V
DS = 100 V,
f = 1 MHz
Reverse Transfer Capacitance
6
pF
nC
Effective Output Capacitance, Energy
Relateda
Co(er)
Co(tr)
-
-
73
-
-
VDS = 0 V to 480 V, VGS = 0 V
Effective Output Capacitance, Time
Relatedb
263
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
-
-
-
-
-
-
-
-
57
11
86
-
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
V
GS = 10 V
ID = 11 A, VDS = 480 V
24
-
18
36
54
99
70
-
27
VDD = 380 V, ID = 11 A,
GS = 10 V, Rg = 4.7
ns
V
Turn-Off Delay Time
Fall Time
td(off)
tf
66
35
Gate Input Resistance
Drain-Source Body Diode Characteristics
Rg
f = 1 MHz, open drain
0.77
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
IS
-
-
-
-
21
56
A
G
ISM
S
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
VSD
trr
TJ = 25 °C, IS = 11 A, VGS = 0 V
-
-
-
-
-
1.2
V
ns
μC
A
344
5.3
28
-
-
-
TJ = 25 °C, IF = IS = 11 A,
dI/dt = 100 A/μs, VR = 25 V
Qrr
IRRM
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS
.
.
S13-2460-Rev. F, 02-Dec-13
Document Number: 91472
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB22N60E
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80
3
2.5
2
TOP 15 V
14 V
TJ = 25 °C
ID = 11 A
13 V
12 V
60
40
20
0
11 V
10 V
9 V
8 V
7 V
1.5
1
VGS = 10 V
6 V
5 V
0.5
0
0
5
10
15
20
25
30
- 60 - 40 - 20
0
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
40
30
20
10
0
10 000
TOP 15 V
TJ = 150 °C
14 V
13 V
12 V
11 V
10 V
9 V
Ciss
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
1000
100
10
7 V
Coss = Cds + Cgd
Coss
8 V
6 V
5 V
Crss
1
0
5
10
15
20
25
30
0
100
200
300
400
500
600
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
14
60
50
40
30
20
5000
500
50
12
10
8
Coss
Eoss
TJ = 150 °C
6
4
TJ = 25 °C
10
0
2
0
0
5
10
15
20
25
0
100
200
300
VDS
400
500
600
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
S13-2460-Rev. F, 02-Dec-13
Fig. 6 - Coss and Eoss vs. VDS
Document Number: 91472
3
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB22N60E
Vishay Siliconix
www.vishay.com
24
20
16
12
8
25
20
15
10
5
VDS = 480 V
VDS = 300 V
VDS = 120 V
4
0
0
0
30
60
90
120
25
50
75
100
125
150
Qg, Total Gate Charge (nC)
TJ, Case Temperature (°C)
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 10 - Maximum Drain Current vs. Case Temperature
725
700
675
650
625
600
575
550
1000
100
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.001
VGS = 0 V
0.0001
- 60 - 40 - 20
0
20 40 60 80 100 120 140 160
0.2
0
0.4
1.0
0.6
0.8
1.2
1.4
TJ, Junction Temperature (°C)
VSD, Source-Drain Voltage (V)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Fig. 11 - Temperature vs. Drain-to-Source Voltage
1000
Operation in this Area
Limited by RDS(on)
100
10
IDM = Limited
100 μs
1 ms
Limited by RDS(on)
*
1
T
T
= 25 °C
= 150 °C
C
J
10 ms
Single Pulse
BVDSS Limited
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Fig. 9 - Maximum Safe Operating Area
S13-2460-Rev. F, 02-Dec-13
Document Number: 91472
4
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB22N60E
Vishay Siliconix
www.vishay.com
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Pulse Time (s)
Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case
RD
VDS
VDS
tp
VGS
VDD
D.U.T.
RG
+
V
-
DD
VDS
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
IAS
Fig. 13 - Switching Time Test Circuit
Fig. 16 - Unclamped Inductive Waveforms
VDS
QG
10 V
90 %
QGS
QGD
VG
10 %
VGS
td(on) tr
td(off) tf
Charge
Fig. 17 - Basic Gate Charge Waveform
Fig. 14 - Switching Time Waveforms
Current regulator
Same type as D.U.T.
L
VDS
Vary tp to obtain
required IAS
50 kΩ
12 V
0.2 µF
D.U.T
IAS
0.3 µF
RG
+
-
VDD
+
-
VDS
D.U.T.
10 V
VGS
0.01 Ω
tp
3 mA
Fig. 15 - Unclamped Inductive Test Circuit
IG
ID
Current sampling resistors
Fig. 18 - Gate Charge Test Circuit
Document Number: 91472
S13-2460-Rev. F, 02-Dec-13
5
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB22N60E
Vishay Siliconix
www.vishay.com
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
D.U.T.
• Low leakage inductance
current transformer
-
+
-
-
+
Rg
• dV/dt controlled by Rg
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
P.W.
D =
Period
Period
V
GS = 10 Va
D.U.T. lSD waveform
D.U.T. VDS waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
ISD
Ripple ≤ 5 %
Note
a. VGS = 5 V for logic level devices
Fig. 19 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91472.
S13-2460-Rev. F, 02-Dec-13
Document Number: 91472
6
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-263AB (HIGH VOLTAGE)
A
B
(Datum A)
3
4
A
A
E
c2
H
L1
4
Gauge
plane
0° to 8°
4
B
5
Detail A
Seating plane
D
H
L
C
C
A1
L3
L4
Detail “A”
1
2
3
L2
Rotated 90° CW
B
B
scale 8:1
A
2 x b2
2 x b
c
E
M
M
B
0.010
A
M
0.004
B
2 x e
Base
metal
5
D1
4
Plating
(c)
b1, b3
5
c1
(b, b2)
Lead tip
4
E1
Section B - B and C - C
Scale: none
View A - A
MILLIMETERS
INCHES
MILLIMETERS
INCHES
DIM.
A
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.38
MAX.
4.83
0.25
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.330
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
DIM.
D1
E
MIN.
6.86
MAX.
MIN.
MAX.
-
10.67
-
0.270
0.380
0.245
-
0.420
-
A1
b
9.65
6.22
E1
e
b1
b2
b3
c
2.54 BSC
0.100 BSC
H
14.61
15.88
2.79
1.65
1.78
0.575
0.625
0.110
0.066
0.070
L
1.78
0.070
L1
L2
L3
L4
-
-
-
-
c1
c2
D
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
Document Number: 91364
Revision: 15-Sep-08
www.vishay.com
1
AN826
Vishay Siliconix
2
RECOMMENDED MINIMUM PADS FOR D PAK: 3-Lead
0.420
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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